KI5402DC [KEXIN]
N-Channel 30-V (D-S) MOSFET; N通道30 -V (D -S )的MOSFET型号: | KI5402DC |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | N-Channel 30-V (D-S) MOSFET |
文件: | 总2页 (文件大小:60K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
IC
N-Channel 30-V (D-S) MOSFET
KI5402DC
Features
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
5 secs
Steady State
30
20
Unit
V
Gate-Source Voltage
VGS
TA = 25
6.7
4.8
4.9
3.5
ID
Continuous Drain Current (TJ = 150 ) *
TA = 70
A
Pulsed Drain Current
IDM
IS
20
Continuous Source Current *
2.1
2.5
1.3
1.1
1.3
0.7
TA = 25
TA = 70
Maximum Power Dissipation *
PD
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Parameter
-55 to 150
260
TJ, Tstg
Symbol
RthJA
Typ
40
Max
50
Unit
t
5 sec
Maximum Junction-to-Ambienta
/W
Steady-State
Steady-State
80
95
Maximum Junction-to-Foot (Drain)
RthJF
15
20
* Surface Mounted on 1" X 1' FR4 Board.
1
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SMD Type
IC
KI5402DC
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Testconditons
Min
1.0
Typ
Max
Unit
V
VGS(th) VDS = VGS, ID = 250 ìA
IGSS
IDSS
ID(on)
rDS(on)
nA
A
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
100
1
Zero Gate Voltage Drain Current
On-State Drain Current*
5
VDS = 24 V, VGS = 0 V, TJ = 55
A
20
A
VDS
5 V, VGS = 10 V
VGS = 10 V, ID = 4.9 A
VGS = 4.5 V, ID = 3.9 A
VDS = 10 V, ID = 4.9 A
IS = 1.1 A, VGS = 0 V
0.030
0.045
15
0.035
0.055
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
gfs
VSD
Qg
S
0.8
13
1.2
20
V
nC
nC
nC
ns
ns
ns
ns
ns
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VDS = 15 V, VGS = 10 V, ID = 4.9 A
1.3
3.1
10
Turn-On Delay Time
Rise Time
15
15
40
15
60
VDD = 15 V, RL = 15 Ù
10
Turn-Off Delay Time
Fall Time
td(off)
tf
25
ID = 1 A, VGEN = 10V, RG = 6
10
Source-Drain Reverse Recovery Time
trr
30
IF = 1.1 A, di/dt = 100 A/
s
* Pulse test; pulse width
300 s, duty cycle
2%.
2
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