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IXFP26N50P3 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFP26N50P3
型号： IXFP26N50P3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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Polar3TM HiperFETTM  
PowerMOSFET  
VDSS = 500V  
ID25 = 26A  
RDS(on) 250m  
IXFA26N50P3  
IXFP26N50P3  
IXFQ26N50P3  
IXFH26N50P3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-3P (IXFQ)  
TO-263 (IXFA)  
TO-220 (IXFP)  
G
S
G
D
G
D (Tab)  
D
S
S
D (Tab)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
Maximum Ratings  
TO-247 (IXFH)  
500  
500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
26  
78  
A
A
S
D (Tab)  
D = Drain  
G = Gate  
S = Source  
IA  
TC = 25C  
TC = 25C  
13  
A
Tab = Drain  
EAS  
300  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
35  
V/ns  
W
500  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
Fast Intrinsic Rectifier  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low RDS(ON) and QG  
FC  
Md  
Mounting Force (TO-263)  
10..65 / 2.2..14.6  
N/lb  
Nm/lb.in  
Low Package Inductance  
Mounting Torque (TO-220, TO-3P & TO-247)  
1.13 / 10  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.0  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
          100 nA  
IDSS  
25 A  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
750 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
250 m  
DS100457D(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA26N50P3 IXFP26N50P3  
IXFQ26N50P3 IXFH26N50P3  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
14  
23  
S
RGi  
2.1  
Ciss  
Coss  
Crss  
2220  
280  
8
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
108  
185  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
21  
7
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
38  
5
RG = 3(External)  
Qg(on)  
Qgs  
42  
11  
15  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.25 C/W  
TO-220  
TO-3P & TO-247  
0.50  
0.25  
C/W  
C/W  
Source-Drain Diode  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
26  
A
A
V
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
104  
1.4  
trr  
QRM  
IRM  
250 ns  
nC  
A
IF = 13A, -di/dt = 100A/μs  
0.9  
10.2  
VR = 100V  
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFA26N50P3 IXFP26N50P3  
IXFQ26N50P3 IXFH26N50P3  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
28  
24  
20  
16  
12  
8
V
= 10V  
V
= 10V  
8V  
GS  
GS  
50  
40  
30  
20  
10  
0
8V  
7V  
7V  
6V  
6V  
4
5V  
5V  
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 13A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
28  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
24  
20  
16  
12  
8
6V  
I
= 26A  
D
I
= 13A  
D
5V  
4V  
4
0
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 13A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
28  
24  
20  
16  
12  
8
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
J
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
TC - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA26N50P3 IXFP26N50P3  
IXFQ26N50P3 IXFH26N50P3  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
45  
40  
35  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
T
J
= - 40oC  
25oC  
125oC  
T
J
= 125oC  
25oC  
- 40oC  
0
0
0
5
10  
15  
20  
25  
30  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
9
8
7
6
5
4
3
2
1
0
V
= 250V  
DS  
I
I
= 13A  
D
G
= 10mA  
T
J
= 125oC  
T
= 25oC  
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Output Capacitance Stored Energy  
Fig. 11. Capacitance  
14  
12  
10  
8
10,000  
1,000  
100  
10  
C
iss  
C
oss  
6
4
C
rss  
2
= 1 MHz  
5
f
0
1
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA26N50P3 IXFP26N50P3  
IXFQ26N50P3 IXFH26N50P3  
Fig. 14. Maximum Transient Thermal Impedance  
Fig. 13. Forward-Bias Safe Operating Area  
1
100  
10  
1
R
Limit  
DS(on)  
25μs  
100μs  
0.1  
0.01  
0.001  
T = 150oC  
J
T
= 25oC  
C
1ms  
Single Pulse  
0.1  
10  
100  
1,000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_26N50P3(W6) 5-19-17-B  
IXFA26N50P3 IXFP26N50P3  
IXFQ26N50P3 IXFH26N50P3  
TO-263 Outline  
TO-220 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-3POutline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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