IXFP3N50PM [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFP3N50PM |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
PolarHVTM HiPerFET
Power MOSFET
VDSS = 500 V
ID25 = 2.7 A
RDS(on) ≤ 2.0 Ω
trr ≤ 200 ns
IXFP 3N50PM
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
OVERMOLDED TO-220
(IXTP...M) OUTLINE
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
30
40
V
V
ID25
IDM
TC =25° C
TC = 25° C, pulse width limited by TJM
2.7
8
A
A
Isolated Tab
G
D
S
IAR
EAR
EAS
TC =25° C
TC =25° C
TC =25° C
3
10
100
A
mJ
mJ
G = Gate
D = Drain
S = Source
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 50 Ω
,
10
V/ns
TC =25° C
36
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
l
Plastic overmolded tab for electrical
isolation
Fast intrinsic diode
International standard package
Unclamped Inductive Switching (UIS)
rated
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
l
l
l
Md
Weight
Mounting torque
1.13/10 Nm/lb.in.
4
g
l
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
l
Easy to mount
Space savings
High power density
l
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VGS = 30 VDC, VDS = 0
500
V
V
l
3.0
5.5
100
nA
IDSS
VDS = VDSS
VGS = 0 V
5
200
µA
µA
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 1.8 A
Note 1
2.0
Ω
DS99509E(04/06)
© 2006 IXYS All rights reserved
IXFP 3N50PM
ISOLATED TO-220 (IXTP...M)
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 1.8 A, Note 1
3.5
S
Ciss
Coss
Crss
409
48
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1
2
3
6.1
td(on)
tr
td(off)
tf
25
28
63
29
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 3.6 A
RG = 50 Ω (External)
Qg(on)
Qgs
9.3
3.3
3.4
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 1.8
Qgd
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
RthJC
3.5 °C/W
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
3.6
A
A
V
ISM
Repetitive
5
VSD
IF = IS, VGS = 0 V, Note 1
1.5
trr
IF = 3.6 A, -di/dt = 100 A/µs,
200 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.1
0.5
µC
A
Notes:
1) Pulse test, t ≤300 µs, duty cycle d≤ 2 %
2) Test current IT = 2.5 A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
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