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IXFP270N06T3 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFP270N06T3
型号： IXFP270N06T3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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Advance Technical Information  
TrenchT3TM HiperFETTM  
Power MOSFET  
VDSS = 60V  
ID25 = 270A  
RDS(on) 3.1m  
IXFA270N06T3  
IXFP270N06T3  
IXFH270N06T3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrnsic Rectifier  
TO-263 AA (IXFA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXFP)  
TJ = 25C to 175C  
60  
60  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSM  
Transient  
20  
V
G
D
D (Tab)  
S
ID25  
ILRMS  
TC = 25C  
Lead Current Limit, RMS  
270  
160  
A
A
TO-247 (IXFH)  
IDM  
TC = 25C, Pulse Width Limited by TJM  
675  
A
IA  
TC = 25C  
TC = 25C  
135  
1.5  
A
J
EAS  
G
D
S
PD  
TC = 25C  
480  
W
D (Tab)  
TJ  
-55 ... +175  
175  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
m/lb.in  
International Standard Packages  
175°C Operating Temperature  
High Current Handling Capability  
Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Fast Intrinsic Rectifier  
Low RDS(on)  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
60  
V
V
2.0  
4.0  
            200 nA  
Applications  
IDSS  
10 A  
DC-DC Converters & Off-Line UPS  
Primary-Side Switch  
High Current Switching Applications  
TJ = 150C  
VGS = 10V, ID = 100A, Notes 1, 2  
1.5 mA  
RDS(on)  
3.1 m  
DS100698A(01/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFA270N06T3 IXFP270N06T3  
IXFH270N06T3  
Characteristic Values  
Min. Typ. Max.  
Symbol  
Test Conditions  
(TJ = 25C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
83  
138  
S
Ciss  
Coss  
Crss  
12.6  
1380  
62  
nF  
pF  
pF  
RGi  
Gate Input Resistance  
1.1  
td(on)  
tr  
td(off)  
tf  
39  
36  
48  
20  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3(External)  
Qg(on)  
Qgs  
200  
68  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
40  
RthJC  
RthCS  
0.31 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
270  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
IF = 135A, VGS = 0V  
1080  
1.4  
trr  
47  
23  
ns  
A
-di/dt = 100A/s  
VR = 40V  
IRM  
QRM  
530  
nC  
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm  
or less from the package body.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFA270N06T3 IXFP270N06T3  
IXFH270N06T3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
280  
240  
200  
160  
120  
80  
350  
300  
250  
200  
150  
100  
50  
V
= 10V  
V
= 15V  
GS  
GS  
10V  
9V  
7V  
8V  
7V  
6.5V  
6V  
5V  
6V  
5V  
40  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VDS - Volts  
Fig. 4. Normalized RDS(on) to ID = 135A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
280  
240  
200  
160  
120  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
9V  
8V  
7V  
6V  
I
D
= 270A  
I
D
= 135A  
5V  
4V  
40  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. Normalized RDS(on) to ID = 135A  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
15V  
External Lead Current Limit  
T = 175ºC  
J
60  
40  
T = 25ºC  
J
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
ID - Amperes  
TC - Degrees Centigrade  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFA270N06T3 IXFP270N06T3  
IXFH270N06T3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
160  
140  
120  
100  
80  
280  
240  
200  
160  
120  
80  
V
= 10V  
V
= 10V  
DS  
DS  
T
J
= - 40ºC  
25ºC  
150ºC  
T
J
= 150ºC  
60  
25ºC  
40  
- 40ºC  
40  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
ID - Amperes  
VGS - Volts  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 30V  
DS  
I
I
= 135A  
= 10mA  
D
G
T
J
= 150ºC  
T
J
= 25ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100000  
10000  
1000  
100  
1000  
100  
10  
R
Limit  
DS(on)  
= 1 MHz  
f
C
iss  
External Lead Limit  
100µs  
C
oss  
1ms  
1
T = 175ºC  
J
10ms  
T
= 25ºC  
C
DC  
C
rss  
Single Pulse  
0.1  
10  
1
10  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA270N06T3 IXFP270N06T3  
IXFH270N06T3  
Fig. 14. Resistive Turn-on Rise Time  
vs. Drain Current  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
40  
39  
38  
37  
36  
35  
34  
33  
32  
39  
38  
37  
36  
35  
34  
33  
32  
R
= 3Ω , V = 10V  
R = 3Ω , V = 10V  
G GS  
G
GS  
V
= 30V  
V
= 30V  
DS  
DS  
T
J
= 25ºC  
I
= 270A  
D
T
J
= 150ºC  
I
= 135A  
D
120  
140  
160  
180  
200  
220  
240  
260  
280  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
23  
22  
21  
20  
19  
18  
65  
600  
500  
400  
300  
200  
100  
0
150  
t f  
td(off)  
t r  
td(on)  
R
= 3Ω, V = 10V  
GS  
TJ = 150ºC, V = 10V  
125  
100  
75  
50  
25  
0
G
GS  
60  
55  
50  
45  
40  
V = 30V  
DS  
V
= 30V  
DS  
I
= 270A  
D
I
= 135A  
D
I
= 135A  
D
I
= 270A  
D
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
12  
14  
16  
18  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
23  
22  
21  
20  
19  
70  
60  
50  
40  
30  
t f  
td(off)  
I
= 270A, 135A  
t f  
td(off)  
D
R
G
= 3ꢀ, VGS = 10V  
T
= 150ºC, V = 10V  
GS  
J
VDS = 30V  
V
= 30V  
DS  
T
J
= 25ºC  
I
= 270A  
D
T
J
= 150ºC  
T
J
= 25ºC  
0
0
2
4
6
8
10  
12  
14  
16  
18  
120  
140  
160  
180  
200  
220  
240  
260  
280  
ID - Amperes  
RG - Ohms  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFA270N06T3 IXFP270N06T3  
IXFH270N06T3  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-247 Outline  
TO-220 Outline  
TO-263 Outline  
E
A
E
E
A
A1  
A
R
A2  
0P  
E2/2  
E1  
4
0P  
L2  
c2  
Q
U
T
H1  
Q
D1  
S
D
L
E2  
L1  
D
(D2)  
(E1)  
D
1
2
3
4
D1  
b2  
4
1
2
3
L3  
L1  
1
2
3
b
c
e
A2  
EJECTOR  
PIN  
L1  
L
1 = Gate  
L
A1  
2,4 = Drain  
3 = Source  
L4  
0- 8  
b2  
b
c
c
3X  
b
e
L1  
b4  
e1  
3X b2  
A1  
e
1 = Gate  
2,4 = Drain  
3 = Source  
1 = Gate  
2,4 = Drain  
3 = Source  
W
BOTTOM FLATNESS  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_270N06T3(U6-M05) 1-27-16  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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