IXGA20N250HV [LITTELFUSE]
Insulated Gate Bipolar Transistor, 30A I(C), 2500V V(BR)CES, N-Channel,;
| 型号： | IXGA20N250HV |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 30A I(C), 2500V V(BR)CES, N-Channel, 栅 |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
High Voltage IGBT
VCES = 2500V
IC110 = 12A
VCE(sat) ≤ 3.1V
IXGA20N250HV
For Capacitor Discharge
Applications
TO-263
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
2500
2500
V
V
G
E
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
C (Tab)
IC25
IC110
ICM
TC = 25°C
30
12
A
A
G = Gate
E = Emitter
C
= Collector
TC = 110°C
Tab = Collector
TC = 25°C, VGE = 19V, 1ms
10ms
105
55
A
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 20Ω
ICM = 60
1500
A
V
(RBSOA)
Clamped Inductive Load
Features
PC
TC = 25°C
150
W
ꢀ
International Standard Package
High Voltage Package
Electrically Isolated Tab
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
VISOL
50/60Hz, 1 Minute
4000
2.3
V~
g
Weight
Advantages
ꢀ
High Power Density
Easy to Mount
ꢀ
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
2500
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = 0.8 • VCES, VGE = 0V
V
V
Applications
5.0
ꢀ
Capacitor Discharge
Pulser Circuits
ꢀ
25 μA
750 μA
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 20A, VGE = 15V, Note 1
3.1
V
DS100474B(04/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXGA20N250HV
Symbol
Test Conditions
Characteristic Values
TO-263 (HV) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 20A, VCE = 10V, Note 1
VGE = 20V, VCE = 15V, Note 1
8
13
S
A
IC(ON)
190
Cies
Coes
Cres
1190
53
pF
pF
pF
VCE = 15V, VGE = 25V, f = 1MHz
IC = 20A, VGE = 15V, VCE = 1000V
18
Qg
53
8
nC
nC
nC
Qge
Qgc
22
PIN: 1 - Gate
2 - Emitter
3 - Collector
td(on)
57
ns
Resistive Switching Times
IC = 40A, VGE = 15V, Note 1
VCE = 1250V, RG = 10Ω
tr
td(off)
160
136
ns
ns
tf
930
ns
RthJC
0.83 °C/W
Note
1. Pulse test, t < 300μs, duty cycle, d < 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA20N250HV
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
80
70
60
50
40
30
20
10
0
240
200
160
120
80
VGE = 25V
VGE = 25V
23V
19V
15V
13V
21V
19V
11V
17V
15V
13V
11V
9V
7V
5V
40
9V
7V
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
80
70
60
50
40
30
20
10
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGE = 25V
21V
VGE = 15V
17V
15V
13V
11V
I C = 80A
I C = 40A
9V
7V
I C = 20A
5V
7
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
8
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
9
8
7
6
5
4
3
2
TJ = 25ºC
TJ = - 40ºC
25ºC
I C = 80A
125ºC
40A
20A
10
6
8
12
14
16
VGE - Volts
18
20
22
24
26
3
4
5
6
7
8
9
10
11
12
13
14
15
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXGA20N250HV
Fig. 7. Transconductance
Fig. 8. Gate Charge
18
16
14
12
10
8
16
14
12
10
8
TJ = - 40ºC
VCE = 1000V
I
I
C = 20A
G = 10mA
25ºC
125ºC
6
6
4
4
2
2
0
0
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
40
45
50
55
IC - Amperes
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
Fig. 10. Capacitance
10,000
1,000
100
70
60
50
40
30
20
10
0
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
G = 20Ω
dv / dt < 10V / ns
R
C
res
10
0
5
10
15
20
25
30
35
40
100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500
VCE - Volts
VCE - Volts
Fig. 13. Maximum Transient Thermal Impedance
1
D = 0.50
D = 0.20
0.1
D = 0.10
D = 0.05
D = tp / T
t
p
D = 0.02
D = 0.01
T
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N250HV
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
RG = 10Ω , VGE = 15V
RG = 10Ω , VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 80A
TJ = 125ºC
TJ = 25ºC
I C = 40A
25
35
45
55
65
75
85
95
105
115
125
20
30
40
50
60
70
80
IC - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
1600
1400
1200
1000
800
600
400
200
0
400
350
300
250
200
150
100
50
1400
1200
1000
800
600
400
200
0
160
150
140
130
120
110
100
90
tf
t
d(off) - - - -
tf
t
d(on) - - - -
TJ = 125ºC, VGE = 15V
RG = 10Ω, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 40A
I C = 40A
I C = 80A
I C = 80A
0
0
50
100
150
200
250
300
350
400
450
500
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
2000
1800
1600
1400
1200
1000
800
180
170
160
150
140
130
120
110
100
90
2000
1800
1600
1400
1200
1000
800
2000
1800
1600
1400
1200
1000
800
tf
td(off
) - - - -
tf
td(off) - - - -
TJ = 125ºC, VGE = 15V
RG = 10Ω, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 40A
TJ = 125ºC
600
600
600
I C = 80A
400
400
400
TJ = 25ºC
200
200
200
0
80
0
0
20
30
40
50
60
70
80
0
50
100
150
200
250
300
350
400
450
500
RG - Ohms
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_20N250(4P)6-07-12-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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