IXTT440N04T4HV [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTT440N04T4HV |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchT4TM
Power MOSFET
VDSS = 40V
ID25 = 440A
RDS(on) 1.25m
IXTT440N04T4HV
N-Channel Enhancement Mode
Avalanche Rated
TO-268HV
Symbol
VDSS
Test Conditions
Maximum Ratings
G
TJ = 25C to 175C
40
40
V
V
S
VDGR
TJ = 25C to 175C, RGS = 1M
D (Tab)
VGSM
Transient
15
V
G = Gate
S = Source
D
= Drain
ID25
ILRMS
TC = 25C
Lead Current Limit, RMS
440
160
A
A
Tab = Drain
IDM
TC = 25C, Pulse Width Limited by TJM
1200
A
IA
TC = 25C
TC = 25C
440
1.5
A
J
EAS
PD
TC = 25C
940
W
Features
TJ
-55 ... +175
175
C
C
C
TJM
Tstg
International Standard Package
Low RDS(ON) and QG
-55 ... +175
Avalanche Rated
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Low Package Inductance
Weight
4
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 15V, VDS = 0V
VDS = VDSS, VGS = 0V
40
V
V
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
2.0
4.0
200 nA
IDSS
10 A
1 mA
TJ = 125C
RDS(on)
VGS = 10V, ID = 100A, Note 1
1.25 m
DS100719(4/16)
© 2016 IXYS CORPORATION, All Rights Reserved
IXTT440N04T4HV
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
110
180
S
RGi
1.1
Ciss
Coss
Crss
26
3570
235
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
44
250
120
74
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Qg(on)
Qgs
480
136
162
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.16 C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
440
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
1760
1.4
V
trr
QRM
IRM
72
110
3
ns
IF = 150A, -di/dt = 100A/μs
nC
VR = 30V
A
Note
1. Pulse test, t 300μs, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT440N04T4HV
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
350
300
250
200
150
100
50
V = 10V
GS
V
= 15V
GS
300
250
200
150
100
50
10V
9V
8V
7V
8V
7V
6.5V
6V
5V
6V
0
0
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0
0.5
1
1.5
2
2.5
VDS - Volts
VDS - Volts
Fig. 4. Normalized RDS(on) to ID = 100A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GS
300
250
200
150
100
50
V
= 10V
GS
10V
8V
I
> 100A
D
7V
6V
5V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. Normalized RDS(on) to ID = 100A
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
160
140
120
100
80
1.8
1.6
1.4
1.2
1.0
0.8
External Lead Current Limit
T = 175ºC
J
V
= 10V
15V
GS
60
T = 25ºC
J
40
20
0
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
IXTT440N04T4HV
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
175
150
125
100
75
450
400
350
300
250
200
150
100
50
V
= 10V
DS
V
= 10V
DS
T
J
= - 40ºC
25ºC
150ºC
T
J
= 150ºC
25ºC
- 40ºC
50
25
0
0
0
20
40
60
80
100
120
140
160
180
200
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
ID - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
V
= 20V
DS
I
I
= 220A
= 10mA
D
G
T
J
= 150ºC
T
J
= 25ºC
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
100
200
300
400
500
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
10,000
1,000
100
10
100
10
1
= 1 MHz
f
R
Limit
DS(on)
100µs
C
iss
External Lead
Current Limit
C
oss
1ms
T = 175ºC
J
T
= 25ºC
C
10ms
100ms
C
rss
Single Pulse
DC
1
1
10
100
0
5
10
15
20
25
30
35
40
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT440N04T4HV
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
600
500
400
300
200
100
0
450
400
350
300
250
200
150
R
= 2ꢀ , V = 10V
GS
G
R
= 2ꢀ , V = 10V
G
GS
V
= 20V
DS
V
= 20V
DS
T
J
= 150ºC
I
I
= 440A
= 220A
D
T
J
= 25ºC
D
25
50
75
100
125
150
220
240
260
280
300
320
340
360
380
400
420
440
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
80
78
76
74
72
70
68
66
160
900
800
700
600
500
400
300
200
100
0
180
t f
td(off)
t r
td(on)
160
140
120
100
80
150
140
130
120
110
100
90
R
G
= 2ꢀ, V = 10V
GS
TJ = 150ºC, V = 10V
GS
V
= 20V
DS
V
= 20V
DS
I
= 220A
D
I
= 440A
D
60
I
= 220A
D
I
= 440A
D
40
20
0
25
50
75
100
125
150
2
4
6
8
10
12
14
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
600
500
400
300
200
100
0
650
550
450
350
250
150
50
80
78
76
74
72
70
68
66
160
150
140
130
120
110
100
90
t f
td(off)
t f
td(off)
R
G
= 2Ω, VGS = 10V
T = 150ºC, V = 10V
J GS
V
DS = 20V
V
= 20V
DS
I
= 220A
D
T = 150ºC
J
I
= 440A
D
T = 25ºC
J
2
3
4
5
6
7
8
9
10 11 12 13 14 15
220 240 260 280 300 320 340 360 380 400 420 440
ID - Amperes
RG - Ohms
© 2016 IXYS CORPORATION, All Rights Reserved
IXTT440N04T4HV
Fig. 19. Maximum Transient Thermal Impedance
aaaa
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
TO-268HV Outline
PINS:
1 - Gate 2 - Source
3 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_440N04T4 (T7-M04) 4-27-16
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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