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NPT1010 [TE]

Gallium Nitride 28V, 100W RF Power Transistor;
NPT1010
型号: NPT1010
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

Gallium Nitride 28V, 100W RF Power Transistor

文件: 总10页 (文件大小:1231K)
中文:  中文翻译
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NPT1010_15

100W RF Power Transistor

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NPT1012

Gallium Nitride 28V, 25W RF Power Transistor

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NPT1012_15

25W RF Power Transistor

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NPT1015

Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT

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NPT1015B

GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz

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NPT1015B-SMBPPR

GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz

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NPT1015_15

DC-3.5 GHz HEMT

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NPT2010

Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT

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NPT2010_15

DC-2.2 GHz HEMT

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NPT2018

Next generation high power RF semiconductor technology

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NPT2018_15

DC-6 GHz HEMT

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NPT2019

Gallium Nitride 48V, 25W, DC-6 GHz HEMT

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NPT2019_15

DC-6 GHz HEMT

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NPT2020

GaN Wideband Transistor 48 V, 50 W

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NPT2020-SMB2

GaN Wideband Transistor 48 V, 50 W

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NPT2020-SMBPPR

GaN Wideband Transistor 48 V, 50 W

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GaN Wideband Transistor 48 V, 50 W

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NPT2021

Next generation high power RF semiconductor technology

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NPT2021-SMBPPR

Suitable for linear and saturated applications

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NPT2021_14

Suitable for linear and saturated applications

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