MDP12N50B [MGCHIP]
N-Channel MOSFET 500V, 11.5A, 0.65(ohm);型号: | MDP12N50B |
厂家: | MagnaChip |
描述: | N-Channel MOSFET 500V, 11.5A, 0.65(ohm) |
文件: | 总8页 (文件大小:1155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
MDP12N50Bꢀ/ꢀMDF12N50B
ꢀ NꢁChannelꢀMOSFETꢀ500V,ꢀ11.5A,ꢀ0.65ꢂ
GeneralꢀDescriptionꢀ
Featuresꢀ
ꢀ
ꢀ
TheꢀMDP/F12N50BꢀusesꢀadvancedꢀMagnachip’sꢀ
MOSFETꢀTechnology,ꢀwhichꢀprovidesꢀlowꢀonꢁstateꢀ
resistance,ꢀhighꢀswitchingꢀperformanceꢀandꢀ
excellentꢀquality.ꢀ
ꢀꢀVDSꢀ=ꢀ500Vꢀ
ꢀꢀIDꢀ=ꢀ11.5Aꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ
ꢀꢀRDS(ON)ꢀ≤ꢀ0.65ꢀꢀ ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ
ꢀ
MDP/F12N50BꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀhighꢀ
Speedꢀswitchingꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ
Applicationsꢀ
ꢀ
ꢀꢀPowerꢀSupplyꢀ
ꢀꢀPFCꢀ
ꢀꢀBallastꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ
ꢀ
Characteristicsꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
Symbolꢀ
MDP12N50Bꢀ MDF12N50Bꢀ
Unitꢀ
Vꢀ
VDSS
ꢀ
ꢀ
500ꢀ
±30ꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
VGSS
Vꢀ
ꢀ TC=25oCꢀ
11.5ꢀ
7.0ꢀ
11.5*ꢀ
7.0*ꢀ
46*ꢀ
Aꢀ
ꢀ ContinuousꢀDrainꢀCurrentꢀ
IDꢀ
ꢀ TC=100oCꢀ
Aꢀ
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)
ꢀ ꢀ PowerꢀDissipationꢀ
ꢀ
IDM
ꢀ
46ꢀ
Aꢀ
ꢀ TC=25oCꢀ
165ꢀ
1.33ꢀ
42ꢀ
Wꢀ
PDꢀ
Derateꢀaboveꢀ25ꢀoCꢀ
0.32ꢀ
W/ꢀoCꢀ
mJꢀ
V/nsꢀ
mJꢀ
RepetitiveꢀAvalancheꢀEnergy(1)ꢀ ꢀ
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)
EAR
dv/dtꢀ
EAS
ꢀ
16.5ꢀ
4.5ꢀ
ꢀ
ꢀ
ꢀ
460ꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
TJ,ꢀTstg
ꢀ
ꢀ
ꢁ55~150ꢀ
oCꢀ
ꢀ
ꢀ
※ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ
ꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
RθJA
RθJC
MDP12N50Bꢀ MDF12N50Bꢀ
Unitꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)
ꢀ
ꢀ
62.5ꢀ
0.75ꢀ
62.5ꢀ
3.0ꢀ
oC/Wꢀ
ꢀ
ꢀ
ꢀ
1
Mayꢀ2012.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
OrderingꢀInformationꢀ
ꢀ
PartꢀNumberꢀ
MDP12N50BTHꢀ
MDF12N50BTHꢀ
Temp.ꢀRangeꢀ
ꢁ55~150oCꢀ
ꢁ55~150oCꢀ
Packageꢀ
TOꢁ220ꢀ
Packingꢀ
Tubeꢀ
RoHSꢀStatusꢀ
HalogenꢀFreeꢀ
HalogenꢀFreeꢀ
TOꢁ220Fꢀ
Tubeꢀ
ꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(Taꢀ=ꢀ25oC)ꢀ
ꢀ
Characteristicsꢀ
StaticꢀCharacteristicsꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ
ꢀ ꢀ ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
BVDSS
VGS(th)
ꢀ
ꢀ ꢀ IDꢀ=ꢀ250ꢂA,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂAꢀ
ꢀ ꢀ VDSꢀ=ꢀ500V,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀ±30V,ꢀVDSꢀ=ꢀ0Vꢀ
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ5.75Aꢀ
ꢀ ꢀ VDSꢀ=ꢀ30V,ꢀIDꢀ=ꢀ5.75Aꢀ
500ꢀ
2.0ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
4.0ꢀ
1ꢀ
Vꢀ
ꢀ
IDSS
ꢀ
ꢀ
ꢁꢀ
ꢂAꢀ
nAꢀ
ꢃꢀ
IGSS
ꢁꢀ
ꢁꢀ
100ꢀ
0.65ꢀ
ꢁꢀ
RDS(ON)
gfsꢀ
ꢀ
ꢁꢀ
0.55ꢀ
ꢀ ꢀ ꢀ 15ꢀ
ꢁꢀ
Sꢀ
Qgꢀ
ꢁꢀ
19.3ꢀ
4.6ꢀ
6.1ꢀ
1034ꢀ
5.1ꢀ
126ꢀ
16ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢀ ꢀ GateꢁSourceꢀChargeꢀ
ꢀ ꢀ GateꢁDrainꢀChargeꢀ
Qgsꢀ
ꢀ ꢀ VDSꢀ=ꢀ400V,ꢀIDꢀ=ꢀ11.5A,ꢀVGSꢀ=ꢀ10V(3)
ꢀ ꢀ VDSꢀ=ꢀ25V,ꢀVGSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ
ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
nCꢀ
pFꢀ
Qgd
ꢀ
ꢀ
ꢀ ꢀ InputꢀCapacitanceꢀ
Ciss
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ
ꢀ ꢀ OutputꢀCapacitanceꢀ
Crssꢀ
Coss
td(on)
trꢀ
ꢀ
ꢀ ꢀ TurnꢁOnꢀ ꢀ DelayꢀTimeꢀ
ꢀ ꢀ RiseꢀTimeꢀ
ꢀ
35ꢀ
VGSꢀ=ꢀ10V,ꢀVDSꢀ=ꢀ250V,ꢀIDꢀ=11.5A,ꢀ
nsꢀ
Aꢀ
RGꢀ=ꢀ25ꢃ(3)
ꢀ
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ
td(off)
ꢀ
31ꢀ
ꢀ ꢀ FallꢀTimeꢀ
tfꢀ
40ꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
MaximumꢀContinuousꢀDrainꢀtoꢀSourceꢀ ꢀ
DiodeꢀForwardꢀCurrentꢀ
ISꢀ
ꢀ
ꢁꢀ
11.5ꢀ
ꢁꢀ
ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀVoltageꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀTimeꢀ
VSD
trrꢀ
ꢀ
ꢀ ꢀ ISꢀ=ꢀ11.5A,ꢀVGSꢀ=ꢀ0Vꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
1.4ꢀ
ꢁꢀ
Vꢀ
310ꢀ
nsꢀ
ꢀ ꢀ IFꢀ=ꢀ11.5A,ꢀdi/dtꢀ=ꢀ100A/ꢂsꢀ
BodyꢀDiodeꢀReverseꢀRecoveryꢀ ꢀ
Chargeꢀ
Qrrꢀ
ꢁꢀ
2.6ꢀ
ꢁꢀ
ꢂCꢀ
ꢀ
Noteꢀ:ꢀ
1.ꢀPulseꢀwidthꢀisꢀbasedꢀonꢀRθJCꢀ&ꢀRθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀ
2.ꢀPulseꢀtest:ꢀpulseꢀwidthꢀ≤300us,ꢀdutyꢀcycle≤2%,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀ
3.ꢀISDꢀ≤11.5A,ꢀdi/dt≤200A/us,ꢀV ≤BVDSS,ꢀRgꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ
DD
4.ꢀL=6.3mH,ꢀIAS=11.5A,ꢀVDD=50V,ꢀ,ꢀRgꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2
Mayꢀ2012.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
20
16
12
8
1.4
1.2
1.0
0.8
0.6
0.4
ꢀV =5.0V
Notesꢀꢀ
ꢀ1.ꢀ250㎲ꢀPulseꢀTest
gs
ꢀꢀꢀꢀꢀꢀ=5.5V
ꢀꢀꢀꢀꢀꢀ=6.0V
ꢀꢀꢀꢀꢀꢀ=6.5V
ꢀꢀꢀꢀꢀꢀ=7.0V
ꢀꢀꢀꢀꢀꢀ=8.0V
ꢀꢀꢀꢀꢀꢀ=10.0V
ꢀꢀꢀꢀꢀꢀ=15.0V
ꢀ2.ꢀT =25℃
C
V
GS=10V
V
GS=20V
4
0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
0
5
10
15
20
ID,DrainꢀCurrentꢀ[A]
V ,DrainꢁSourceꢀVoltageꢀ[V]
DS
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
ꢀ
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀ=ꢀ5.75A
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀꢀ=ꢀ250㎂
1.1
1.0
0.9
0.8
ꢁ50
0
50
100
150
200
ꢁ50
0
50
100
150
200
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀ Breakdownꢀ Voltageꢀ Variationꢀ vs.ꢀ
Temperatureꢀ
ꢀ
ꢀ
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.250µsꢀPulseꢀtest
*ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVds=30V
10
10
150℃
150℃
25℃
ꢁ55℃
1
1
25℃
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
8
9
VSD,ꢀSourceꢁDrainꢀVoltageꢀ[V]
VGSꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ
VariationꢀwithꢀSourceꢀCurrentꢀandꢀ
Temperatureꢀ
ꢀ
ꢀ
ꢀ
3
Mayꢀ2012.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
2200
2000
1800
1600
1400
1200
1000
800
C
issꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
Crssꢀ=ꢀCgd
10
8
※ꢀNoteꢀ:ꢀIDꢀ=ꢀ11.5A
Coss
100V
250V
400V
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
6
Ciss
4
Crss
600
2
400
200
0
0
1
10
0
2
4
6
8
10
12
14
16
18
20
22
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
QG,ꢀTotalꢀGateꢀChargeꢀ[nC]
Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ
Fig.8ꢀCapacitanceꢀCharacteristicsꢀ
ꢀ
102
14
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
10ꢀµs
12
10
8
100ꢀµs
1ꢀms
10ꢀms
100ꢀms
DC
101
100
10ꢁ1
10ꢁ2
6
4
SingleꢀPulse
TJ=Maxꢀrated
TC=25℃
2
0
25
10ꢁ1
100
101
102
50
75
100
125
150
TC,ꢀCaseꢀTemperatureꢀ[℃]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
MDP12N50Bꢀ(TOꢁ220)ꢀ
Fig.10ꢀMaximumꢀDrainꢀCurrentꢀvs.ꢀCaseꢀ
Temperatureꢀ
ꢀ
ꢀ
100
15000
12000
9000
6000
3000
0
singleꢀPulse
RthJCꢀ=ꢀ0.75℃/W
D=0.5
0.2
TCꢀ=ꢀ25℃
ꢁ1
10
0.1
0.05
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
0.02
0.01
JC
JC
ꢀꢀꢀꢀꢀꢀRΘ =0.75℃/W
JC
singleꢀpulse
10ꢁ3
ꢁ2
10
10ꢁ5
10ꢁ4
10ꢁ2
10ꢁ1
100
101
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
PulseꢀWidthꢀ(s)
Fig.12ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ–ꢀMDP12N50Bꢀ(TOꢁ220)ꢀ
Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
MDP12N50Bꢀ(TOꢁ220)ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
4
Mayꢀ2012.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
102
101
100
10ꢁ1
10ꢁ2
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
10000
8000
6000
4000
2000
0
singleꢀPulse
thJCꢀ=ꢀ3.0℃/W
TCꢀ=ꢀ25℃
10ꢀµs
100ꢀµs
1ꢀms
10ꢀms
100ꢀms
DC
R
SingleꢀPulse
TJ=Maxꢀrated
TC=25℃
10ꢁ1
100
101
102
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
10
PulseꢀWidthꢀ(s)
ꢁVDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.14ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ–ꢀMDF12N50Bꢀ(TOꢁ220F)ꢀ
Fig.13ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
MDF12N50Bꢀ(TOꢁ220F)ꢀ
ꢀ
D=0.5
100
0.2
0.1
0.05
ꢁ1
10
0.02
0.01
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
JC
JC
ꢀꢀꢀꢀꢀꢀRΘ =110℃/W
JA
singleꢀpulse
ꢁ2
10
ꢁ5
10
ꢁ4
10
ꢁ3
10
ꢁ2
10
ꢁ1
10
100
101
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
Fig.15ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
MDF12N50Bꢀ(TOꢁ220F)ꢀ
5
Mayꢀ2012.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ ꢀ ꢀ PhysicalꢀDimensions
ꢀ
ꢀ
ꢀ
3ꢀLeads,ꢀTOꢁ220ꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimetersꢀunlessꢀotherwiseꢀspecifiedꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
6
Mayꢀ2012.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
PhysicalꢀDimension
ꢀ
ꢀ
ꢀ
3ꢀLeads,ꢀTOꢁ220Fꢀ
ꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimetersꢀunlessꢀotherwiseꢀspecifiedꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Symbol
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
A
b
b1
C
D
E
e
F
G
L
16.13
10.71
2.54
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
L1
Q
Q1
¢R
ꢀ
7
Mayꢀ2012.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
WorldwideꢀSalesꢀSupportꢀLocationsꢀ
ꢀ
ꢀ
U.S.Aꢀ
Chinaꢀ
SunnyvaleꢀOfficeꢀ
787ꢀN.ꢀMaryꢀAve.ꢀSunnyvaleꢀ
CAꢀ94085ꢀU.S.Aꢀ
Telꢀ:ꢀ1ꢁ408ꢁ636ꢁ5200ꢀ ꢀ
Faxꢀ:ꢀ1ꢁ408ꢁ213ꢁ2450ꢀ ꢀ
EꢁMailꢀ:ꢀusasales@magnachip.comꢀ
ꢀ
HongꢀKongꢀOfficeꢀ
Suiteꢀ1024,ꢀOceanꢀCentreꢀ5ꢀCantonꢀRoad,ꢀ ꢀ
TsimꢀShaꢀTsuiꢀKowloon,ꢀHongꢀKongꢀ
Telꢀ:ꢀ852ꢁ2828ꢁ9700ꢀ
Faxꢀ:ꢀ852ꢁ2802ꢁ8183ꢀ
EꢁMailꢀ:ꢀchinasales@magnachip.comꢀ
ꢀ
ꢀ
ShenzhenꢀOfficeꢀ
U.Kꢀ
Roomꢀ2003B,ꢀ20/Fꢀ
KnyvettꢀHouseꢀTheꢀCauseway,ꢀ ꢀ
StainesꢀMiddx,ꢀTW18ꢀ3BA,U.K.ꢀ
Telꢀ:ꢀ+44ꢀ(0)ꢀ1784ꢁ895ꢁ000ꢀ
Faxꢀ:ꢀ+44ꢀ(0)ꢀ1784ꢁ895ꢁ115ꢀ
EꢁMailꢀ:ꢀuksales@magnachip.comꢀ
ꢀ
InternationalꢀChamberꢀofꢀCommerceꢀTowerꢀ
FuhuaꢀRoad3ꢀCBD,ꢀFutianꢀDistrict,ꢀChinaꢀ
Telꢀ:ꢀ86ꢁ755ꢁ8831ꢁ5561ꢀ
Faxꢀ:ꢀ86ꢁ755ꢁ8831ꢁ5565ꢀ
EꢁMailꢀ:ꢀchinasales@magnachip.comꢀ
ꢀ
ꢀ
ꢀ
Japanꢀ
ShanghaiꢀOfficeꢀ
OsakaꢀOfficeꢀ ꢀ
RoomꢀE,ꢀ8/F,ꢀLiaoshenꢀInternationalꢀBuildingꢀ1068ꢀ
WuzhongꢀRoad,ꢀ(C)ꢀ201103ꢀ
Shanghai,ꢀChinaꢀ
Telꢀ:ꢀ86ꢁ21ꢁ6405ꢁ1521ꢀ
Faxꢀ:ꢀ86ꢁ21ꢁ6505ꢁ1523ꢀ
EꢁMailꢀ:ꢀchinasales@magnachip.comꢀ
ꢀ
3F,ꢀShinꢁOsakaꢀMTꢁ2ꢀBldgꢀ3ꢁ5ꢁ36ꢀ ꢀ
MiyaharaꢀYodogawaꢁKuꢀ ꢀ
Osaka,ꢀ532ꢁ0003ꢀJapanꢀ
Telꢀ:ꢀ81ꢁ6ꢁ6394ꢁ9160ꢀ
Faxꢀ:ꢀ81ꢁ6ꢁ6394ꢁ9150ꢀ
EꢁMailꢀ:ꢀosakasales@magnachip.comꢀ
ꢀ
ꢀ
ꢀ
Koreaꢀ ꢀ ꢀ
TaiwanꢀR.O.Cꢀ
891,ꢀDaechiꢁDong,ꢀKangnamꢁGuꢀ
Seoul,ꢀ135ꢁ738ꢀKoreaꢀ
Telꢀ:ꢀ82ꢁ2ꢁ6903ꢁ3451ꢀ
Faxꢀ:ꢀ82ꢁ2ꢁ6903ꢁ3668ꢀ~9ꢀ ꢀ
Emailꢀ:ꢀkoreasales@magnachip.comꢀ
ꢀ
2F,ꢀNo.61,ꢀChowizeꢀStreet,ꢀNeiꢀHuꢀ
Taipei,114ꢀTaiwanꢀR.O.Cꢀ ꢀ
Telꢀ:ꢀ886ꢁ2ꢁ2657ꢁ7898ꢀ
Faxꢀ:ꢀ886ꢁ2ꢁ2657ꢁ8751ꢀ
EꢁMailꢀ:ꢀtaiwansales@magnachip.comꢀ
ꢀ
ꢀ
DISCLAIMER:ꢀ
ꢀ
TheꢀProductsꢀareꢀnotꢀdesignedꢀforꢀuseꢀinꢀhostileꢀenvironments,ꢀincluding,ꢀwithoutꢀlimitation,ꢀaircraft,ꢀnuclearꢀpowerꢀ
generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀ inꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ
expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ
applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ
ꢀ
ꢀ
\ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ
forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ
SemiconductorꢀLtd.ꢀ
ꢀ
ꢀ
8
Mayꢀ2012.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
相关型号:
MDP140010R0FD04
Thick Film Resistor Networks, Dual-In-Line, Molded DIP, 01, 03, 05 Schematics
VISHAY
©2020 ICPDF网 联系我们和版权申明