MJF18002 [MOTOROLA]
POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS; 功率晶体管2.0安培1000伏特25和50瓦
| 型号： | MJF18002 |
| 厂家： | 
MOTOROLA |
| 描述： | POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS |
| 文件： | 总10页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJE18002/D
SEMICONDUCTOR TECHNICAL DATA
NPN Bipolar Power Transistor
For Switching Power Supply Applications
*Motorola Preferred Device
The MJE/MJF18002 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
POWER TRANSISTOR
2.0 AMPERES
1000 VOLTS
•
Improved Efficiency Due to Low Base Drive Requirements:
25 and 50 WATTS
— High and Flat DC Current Gain h
— Fast Switching
FE
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Tight Parametric Distributions are Consistent Lot–to–Lot
Two Package Choices: Standard TO–220 or Isolated TO–220
•
•
•
MJF18002, Case 221D, is UL Recognized at 3500 V
: File #E69369
RMS
MAXIMUM RATINGS
Rating
Symbol MJE18002 MJF18002
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
450
1000
9.0
CEO
V
CES
EBO
V
CASE 221A–06
TO–220AB
MJE18002
Collector Current — Continuous
— Peak(1)
I
2.0
5.0
C
I
CM
Base Current — Continuous
— Peak(1)
I
1.0
2.0
Adc
V
B
I
BM
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
Test No. 1 Per Fig. 1
Test No. 2 Per Fig. 2
Test No. 3 Per Fig. 3
V
—
—
—
4500
3500
1500
ISOL
T
C
= 25°C)
Total Device Dissipation
Derate above 25°C
(T = 25°C)
C
P
D
50
0.4
25
0.2
Watts
W/°C
Operating and Storage Temperature
T , T
J stg
–65 to 150
°C
THERMAL CHARACTERISTICS
Rating
Symbol MJE18002 MJF18002
Unit
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF18002
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.5
62.5
5.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
450
—
—
—
—
Vdc
µAdc
µAdc
C
CEO(sus)
Collector Cutoff Current (V
= Rated V
, I = 0)
B
I
CEO
100
CE
CEO
Collector Cutoff Current (V
Collector Cutoff Current (V
= Rated V
= 800 V, V
, V
= 0)
T
C
T
C
= 125°C
= 125°C
I
—
—
—
—
—
—
100
500
100
CE
CE
CES EB
= 0)
CES
EB
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I = 0)
I
—
—
100
µAdc
C
EBO
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (I = 0.4 Adc, I = 40 mAdc)
V
—
—
0.825
0.92
1.1
1.25
Vdc
Vdc
C
B
BE(sat)
Base–Emitter Saturation Voltage (I = 1.0 Adc, I = 0.2 Adc)
C
B
Collector–Emitter Saturation Voltage
(I = 0.4 Adc, I = 40 mAdc)
V
CE(sat)
—
—
—
—
0.2
0.2
0.25
0.3
0.5
0.5
0.5
0.6
C
B
@ T = 125°C
C
(I = 1.0 Adc, I = 0.2 Adc)
C
B
@ T = 125°C
C
DC Current Gain (I = 0.2 Adc, V
= 5.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
h
FE
14
—
11
—
27
17
20
8.0
8.0
20
34
—
—
—
—
—
—
—
C
CE
CE
CE
@ T = 125°C
C
DC Current Gain (I = 0.4 Adc, V
C
@ T = 125°C
11
C
DC Current Gain (I = 1.0 Adc, V
6.0
5.0
10
C
@ T = 125°C
C
DC Current Gain (I = 10 mAdc, V
C
= 5.0 Vdc)
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.2 Adc, V
= 10 Vdc, f = 1.0 MHz)
f
—
—
—
13
35
—
60
MHz
pF
C
CE
T
Output Capacitance (V
CB
= 10 Vdc, I = 0, f = 1.0 MHz)
C
E
ob
Input Capacitance (V
= 8.0 V)
C
400
600
pF
EB
ib
Dynamic Saturation:
V
Vdc
—
—
3.5
8.0
—
—
CE(dsat)
1.0 µs
3.0 µs
1.0 µs
3.0 µs
I
I
V
= 0.4 A
C
@ T = 125°C
C
= 40 mA
B1
determined 1.0 µs and
3.0 µs after rising I
—
—
1.5
3.8
—
—
= 300 V
CC
B1
@ T = 125°C
C
(see Figure 18)
B1
—
—
8.0
14
—
—
I
I
V
= 1.0 A
= 0.2 A
C
B1
@ T = 125°C
C
—
—
2.0
7.0
—
—
= 300 V
CC
@ T = 125°C
C
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
I
I
I
= 0.4 Adc
Turn–On Time
t
on
t
off
t
on
t
off
—
—
200
130
300
—
ns
µs
ns
µs
C
= 40 mAdc
@ T = 125°C
B1
B2
C
= 0.2 Adc
= 300 V
Turn–Off Time
—
—
1.2
1.5
2.5
—
V
CC
@ T = 125°C
C
I
= 1.0 Adc
= 0.2 Adc
= 0.5 Adc
Turn–On Time
Turn–Off Time
—
—
85
95
150
—
C
I
I
@ T = 125°C
B1
B2
C
—
—
1.7
2.1
2.5
—
V
= 300 V
CC
@ T = 125°C
C
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, V
CC
= 15 V, L = 200 µH)
I
C
= 0.4 Adc, I = 40 mAdc,
Fall Time
t
—
—
125
120
200
—
ns
µs
ns
ns
µs
ns
ns
µs
ns
B1
fi
I
= 0.2 Adc
@ T = 125°C
B2
C
Storage Time
Crossover Time
Fall Time
t
si
—
—
0.7
0.8
1.25
—
@ T = 125°C
C
t
—
—
110
110
200
—
c
fi
@ T = 125°C
C
I
C
= 1.0 Adc, I = 0.2 Adc,
B1
t
—
—
110
120
175
—
I
= 0.5 Adc
@ T = 125°C
B2
C
Storage Time
Crossover Time
Fall Time
t
si
—
—
1.7
2.25
2.75
—
@ T = 125°C
C
t
c
—
—
200
250
300
—
@ T = 125°C
C
I
C
= 0.4 Adc, I = 50 mAdc,
B1
t
fi
—
—
140
185
200
—
I
= 50 mAdc
@ T = 125°C
B2
C
Storage Time
Crossover Time
t
si
—
—
2.2
2.5
3.0
—
@ T = 125°C
C
t
c
—
—
140
220
250
—
@ T = 125°C
C
2
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
100
10
1
100
V
= 1 V
V
= 5 V
CE
CE
T
J
= 25°C
T
= 125
°
C
T
= 125°C
J
J
T
= 25°C
J
T
= –20°C
J
10
1
0.01
0.01
0.10
1.00
10.00
0.10
1.00
10.00
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
1
0
10.00
T
= 25°C
J
1.00
0.10
0.01
2 A
I
/I = 10
1.5 A
C B
1 A
I
/I = 5
0.4 A
C B
T
T
= 25°C
= 125°C
J
J
I
= 0.2 A
C
0.001
0.010
0.100
1.000
0.01
0.10
1.00
10.00
I
, BASE CURRENT (mA)
I , COLLECTOR CURRENT (AMPS)
C
B
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
1.1
1.0
0.9
0.8
1000
C
ib
T
= 25°C
J
f = 1 MHz
100
10
1
T
= 25°C
J
0.7
0.6
0.5
0.4
C
ob
T
= 125°C
J
I
I
/I = 10
C B
/I = 5
C B
0.01
0.10
1.00
10.00
1
10
100
1000
I
, COLLECTOR CURRENT (AMPS)
V
, COLLECTOR–EMITTER (VOLTS)
C
CE
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
3
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(I
= I /2 for all switching)
B2
C
2500
2000
1500
1000
500
4500
4000
3500
3000
2500
2000
I
V
= I /2
C
B(off)
CC
I
V
= I /2
C
B(off)
CC
I
/I = 5
= 300 V
C B
= 300 V
PW = 20
µs
PW = 20 µs
T
T
= 25°C
= 125°C
T
= 125°C
J
J
J
I
/I = 5
/I = 10
I
/I = 10
C B
C B
I
C B
1500
1000
500
0
T
= 25°C
J
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 7. Resistive Switching, t
Figure 8. Resistive Switching, t
off
on
3000
2500
I
V
V
= I /2
C
B(off)
CC
Z
C
I
V
V
= I /2
= 15 V
= 300 V
= 200 µH
B(off)
CC
Z
C
C
I
= 1 A
C
= 15 V
2500
2000
1500
1000
500
2000
1500
1000
500
0
= 300 V
= 200 µH
I
/I = 5
C B
L
L
I = 0.4 A
C
T
T
= 25
= 125
°
C
J
J
T
T
= 25°C
= 125°C
I
/I = 10
J
J
C B
°C
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
5
7
9
11
13
15
I
, COLLECTOR CURRENT (AMPS)
h
, FORCED GAIN
C
FE
Figure 9. Inductive Storage Time, t
Figure 10. Inductive Storage Time
si
600
450
I
= I /2
C
CC
= 300 V
I
= I /2
= 15 V
= 300 V
= 200 µH
B(off)
B(off)
CC
Z
C
C
400
350
300
250
200
150
100
50
t
c
V
V
L
= 15 V
V
V
L
500
400
300
200
100
0
t
t
c
Z
C
t
fi
= 200 µH
T
T
= 25°C
= 125°C
fi
J
J
t
t
c
t
c
fi
t
fi
T
T
= 25
= 125°C
°C
J
J
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 11. Inductive Switching, t & t , I /I = 5
fi C B
Figure 12. Inductive Switching, t & t , I /I = 10
fi C B
c
c
4
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(I
= I /2 for all switching)
B2
C
250
180
160
140
120
100
80
I
V
V
= I /2
C
B(off)
CC
Z
C
I
V
V
= I /2
C
230
210
190
170
150
130
110
90
B(off)
CC
Z
C
I
= 1 A
C
= 15 V
= 15 V
= 300 V
= 200 µH
= 300 V
= 200 µH
L
L
I
= 0.4 A
C
I
= 1 A
C
I
= 0.4 A
C
T
T
= 25°C
T
T
= 25°C
= 125°C
J
J
J
J
= 125°C
70
50
60
5
6
7
8
9
10
11
12
13
14
15
5
6
7
8
9
10
11
12
13
14
15
h
, FORCED GAIN
h
, FORCED GAIN
FE
FE
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
2.5
10.00
5 ms
1 ms
50
µs
10 µs 1 µs
T
≤ 125°C
C
/I
DC (MJE18002)
2.0
1.5
1.0
0.5
0
I
L
≥
4
C B
C
= 500 µH
1.00
0.10
0.01
DC (MJF18002)
V
= 0.5 V
BE(off)
0 V
–1.5 V
10
100
1000
0
200
400
600
800
1000
1200
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe
Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
1.0
down. Safe operating area curves indicate I –V
limits of
C
CE
SECOND
BREAKDOWN
DERATING
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
0.8
0.6
0.4
0.2
0
on T = 25°C; T (pk) is variable depending on power level.
C
J
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when T > 25°C. Second break-
C
down limitations do not derate the same as thermal limita-
tions. Allowable current at the voltages shown on Figure 15
may be found at any case temperature by using the appropri-
THERMAL
DERATING
ate curve on Figure 17. T (pk) may be calculated from the
J
data in Figures 20 and 21. At any case temperatures, thermal
limitations will reduce the power that can be handled to val-
ues less the limitations imposed by second breakdown. For
inductive loads, high voltage and current must be sustained
simultaneously during turn–off with the base to emitter junc-
tion reverse biased. The safe level is specified as a reverse
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode.
20
40
60
80
100
120
140
160
T
, CASE TEMPERATURE (°C)
C
Figure 17. Forward Bias Power Derating
5
Motorola Bipolar Power Transistor Device Data
10
5
4
V
CE
90% I
I
C
9
8
7
6
5
C
t
fi
3
dyn 1 µs
t
si
2
dyn 3 µs
1
T
10% I
C
C
V
I
10% V
0
CLAMP
CLAMP
–1
–2
–3
–4
–5
4
3
2
1
0
90% I
B
90% I
B
1
B
1 µs
3 µs
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I
PEAK
C
100 µF
1
µ
F
MTP8P10
MUR105
MJE210
100
3 V
Ω
150
3 V
Ω
V
PEAK
CE
V
CE
MTP8P10
Rb1
MPF930
I
1
B
MPF930
+10 V
I
out
I
B
A
I
2
B
50
Ω
Rb2
V(BR)CEO(sus)
INDUCTIVE SWITCHING
RBSOA
L = 500
RB2 = 0
COMMON
MTP12N10
150
3 V
Ω
L = 10
RB2 =
µ
∞
H
L = 200
µH
µH
RB2 = 0
500 µF
V
= 20 VOLTS
V
= 15 VOLTS
V
= 15 VOLTS
CC
(pk) = 100 mA
CC
RB1 SELECTED FOR
DESIRED I
CC
RB1 SELECTED
FOR DESIRED I
I
C
1 µF
1
1
B
B
–V
off
Table 1. Inductive Load Switching Drive Circuit
6
Motorola Bipolar Power Transistor Device Data
TYPICAL THERMAL RESPONSE
1.00
0.10
0.01
0.5
0.2
0.1
0.05
R
R
(t) = r(t) R
θ
θ
θ
JC
JC
JC
°C/W MAX
P
(pk)
=
0.02
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
t
t
1
SINGLE PULSE
2
1
T
– T = P R (t)
(pk) θJC
J(pk)
C
DUTY CYCLE, D = t /t
1 2
0.01
0.10
1.00
10.00
100.00
1000.00
t, TIME (ms)
Figure 20. Typical Thermal Response (Z
θJC
(t)) for MJE18002
1.00
0.10
0.01
0.5
0.2
0.1
R
R
(t) = r(t) R
θ
θ
θ
JC
JC
JC
°C/W MAX
P
(pk)
=
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
0.02
t
t
1
2
1
T
– T = P R (t)
(pk) θJC
J(pk)
C
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.01
0.10
1.00
10.00
100.00
1000.00
10000.00
100000.00
t, TIME (ms)
Figure 21. Typical Thermal Response (Z
θJC
(t)) for MJF18002
7
Motorola Bipolar Power Transistor Device Data
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
MOUNTED
FULLY ISOLATED
PACKAGE
FULLY ISOLATED
CLIP
CLIP
PACKAGE
0.107
″
MIN
0.107″ MIN
LEADS
LEADS
LEADS
HEATSINK
0.110 MIN
HEATSINK
HEATSINK
″
Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position
for Isolation Test Number 1 for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
HEATSINK
Figure 23a. Screw–Mounted
Figure 23b. Clip–Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
.
torque of 6 to 8 in lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-
stant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will
.
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
.
in lbs of mounting torque under any mounting conditions.
**For more information about mounting power semiconductors see Application Note AN1040.
8
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
SEATING
PLANE
–T–
B
F
C
T
NOTES:
S
4
INCHES
MIN
MILLIMETERS
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
A
K
Q
Z
1
2
3
H
U
L
R
V
T
U
V
J
G
D
Z
0.080
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
SEATING
PLANE
–T–
–B–
C
NOTES:
F
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
Q
H
U
INCHES
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MIN
MAX
0.629
0.402
0.189
0.034
0.129
MIN
15.78
10.01
4.60
MAX
15.97
10.21
4.80
A
0.621
0.394
0.181
0.026
0.121
1
2 3
0.67
0.86
3.08
3.27
–Y–
K
0.100 BSC
2.54 BSC
0.123
0.018
0.500
0.045
0.129
0.025
0.562
0.060
3.13
0.46
3.27
0.64
12.70
1.14
14.27
1.52
G
N
J
0.200 BSC
5.08 BSC
R
0.126
0.107
0.096
0.259
0.134
0.111
0.104
0.267
3.21
2.72
2.44
6.58
3.40
2.81
2.64
6.78
L
D 3 PL
U
M
M
0.25 (0.010)
B
Y
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 221D–02
(ISOLATED TO–220 TYPE)
UL RECOGNIZED: FILE #E69369
ISSUE D
9
Motorola Bipolar Power Transistor Device Data
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