MMFT6N03HD [MOTOROLA]
TMOS POWER 6.0 AMPERES 30 VOLTS; TMOS功率6.0安培30伏特
| 型号： | MMFT6N03HD |
| 厂家： | 
MOTOROLA |
| 描述： | TMOS POWER 6.0 AMPERES 30 VOLTS |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Power Products Marketing
SEMICONDUCTOR TECHNICAL DATA
Medium Power Surface Mount Products
These medium power SOT–223 devices are an advanced series
of power MOSFETs which utilize Motorola’s High Cell Density
HDTMOS process. These surface mount MOSFETs feature low
TMOS POWER FET
6.0 AMPERES
30 VOLTS
R
= 0.050 OHM
DS(on)
R
and true logic level performance. They are capable of
DS(on)
withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse
recovery time. SOT–223 HDTMOS devices are designed for use in
low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in peripheral products such as printers
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
D
4
G
1
2
3
S
CASE 318E–04, Style 3
TO–261AA
•
•
•
•
•
•
•
•
Low R Provides Higher Efficiency and Extends Battery Life
DS(on)
Logic Level Gate Drive — Can Be Driven by Logic ICs
SOT–223 Saves Board Space and Height
Diode Is Characterized for Use In Bridge Circuits
I
Specified at Elevated Temperature
DSS
Avalanche Energy Specified
Mounting Information for SOT–223 Package Provided
Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel
Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
30
Unit
Drain–to–Source Voltage
V
DSS
Vdc
Vdc
Vdc
Adc
Drain–to–Gate Voltage (R
GS
= 1.0 MΩ)
V
DGR
30
Gate–to–Source Voltage – Continuous
V
GS
± 20
(1)
Drain Current – Continuous
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (t ≤ 10 µs)
I
I
6.0
3.7
40
D
D
(1)
(1)
I
Apk
p
DM
(1)
(2)
Total PD @ T = 25°C
P
D
1.8
0.8
Watts
A
Total PD @ T = 25°C
A
Operating and Storage Temperature Range
T , T
J stg
–55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy – Starting T = 25°C
E
AS
mJ
J
(V
DD
= 25 Vdc, V
= 10 Vdc, Peak I = 6.0 Apk, L = 72 mH)
1300
GS
L
Thermal Resistance
– Junction to Ambient
– Junction to Ambient
°C/W
°C
(1)
(2)
R
R
70
156
θJA
θJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
T
260
L
(1) When mounted on 1” sq. Drain pad on FR–4 bd material
(2) When mounted on minimum recommended Drain pad on FR–4 bd material
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
V
Vdc
(BR)DSS
(V
GS
= 0 Vdc, I = 0.25 mAdc)
30
—
—
D
Zero Gate Voltage Drain Current
I
µAdc
DSS
(V
DS
(V
DS
= 30 Vdc, V
= 30 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 125°C)
—
—
—
—
10
100
GS
GS
J
Gate–Body Leakage Current (V
= ± 20 Vdc, V
= 0 Vdc)
DS
I
—
—
100
nAdc
GS
GSS
ON CHARACTERISTICS (1)
Gate Threshold Voltage
V
Vdc
GS(th)
(V
DS
= V , I = 250 µAdc)
1.0
1.5
2.0
GS
D
Static Drain–to–Source On–Resistance
R
Ohm
DS(on)
(V
GS
(V
GS
= 10 Vdc, I = 5.5 Adc)
—
—
0.040
0.053
0.050
0.060
D
= 4.5 Vdc, I = 4.3 Adc)
D
Forward Transconductance (V
= 10 Vdc, I = 5.5 Adc)
g
FS
6.0
9.5
—
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
420
190
65
—
—
—
iss
(V
DS
= 25 Vdc, V
GS
f = 1.0 MHz)
= 0 Vdc,
Output Capacitance
C
oss
Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
—
—
—
—
—
—
—
—
6.0
21
15
40
50
60
30
—
—
—
ns
d(on)
(V
(V
= 15 Vdc, I = 6.0 Adc,
D
Rise Time
DD
t
r
V
= 10 Vdc,
GS
G
Turn–Off Delay Time
Fall Time
t
25
d(off)
R
= 6.0 Ω)
t
f
30
Gate Charge
Q
T
Q
1
Q
2
Q
3
15
nC
2.0
4.3
4.3
= 24 Vdc, I = 6.0 Adc,
DS
D
V
GS
= 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
V
Vdc
ns
SD
(I = 6.0 Adc, V
(I = 6.0 Adc, V
GS
= 0 Vdc)
= 0 Vdc, T = 125°C)
S
GS
—
—
0.92
0.80
1.2
—
S
J
Reverse Recovery Time
t
—
—
—
—
28
13
—
—
—
—
rr
t
a
(I = 6.0 Adc, V
= 0 Vdc,
dI /dt = 100 A/µs)
S
GS
S
t
15
b
Reverse Recovery Stored Charge
Q
0.020
µC
RR
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
MILLIMETERS
S
B
DIM
A
B
C
D
F
G
H
J
K
L
M
S
MIN
MAX
0.263
0.145
0.068
0.035
0.126
0.094
MIN
6.30
3.30
1.50
0.60
2.90
2.20
0.020
0.24
1.50
0.85
0
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
0.249
0.130
0.060
0.024
0.115
0.087
D
L
0.0008 0.0040
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
J
C
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
CASE 318E–04
ISSUE H
Motorola TMOS Power MOSFET Transistor Device Data
3
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MMFT6N03HD/D
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