N-HFA08TB120 [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 8 A; FRED超快软恢复二极管，一个8
| 型号： | N-HFA08TB120 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 8 A |
| 文件： | 总6页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
N-HFA08TB120
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 8 A
Available
RoHS*
FEATURES
COMPLIANT
Ultrafast recovery
Ultrasoft recovery
Very low IRRM
Very low Qrr
Specified at operating conditions
Lead (Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
cathode
2
DESCRIPTION
HFA08TB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V
and 8 A continuous current, the HFA08TB120 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
1
3
Cathode Anode
TO-220AC
PRODUCT SUMMARY
extremely low values of peak recovery current (I
)
RRM
VR
VF at 8A at 25 ºC
IF(AV)
1200 V
3.3 V
8 A
and does not exhibit any tendency to “snap-off” during
the t portion of recovery. The FRED features combine
b
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA08TB120
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
trr (typical)
30 ns
150 ºC
140 nC
85 A/µS
4.5 A
TJ (maximum)
Qrr (typical)
dI(rec)M/dt (typical) at 125 ºC
I
RRM (typical)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
UNITS
VALUES
V
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
1200
IF
Tc = 100 ºC
8
IFSM
A
130
IFRM
PD
32
Tc = 25 ºC
73
29
Maximum power dissipation
W
Tc = 100 ºC
TJ, TStg
Operating junction and storage temperature range
- 55 to + 150
°C
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Page 1 of 6
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N-HFA08TB120
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
(T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
TYP.
UNITS
MIN.
Cathode to anode
breakdown voltage
-
-
VBR
IR = 100 µA
1200
IF = 8.0 A
IF = 16 A
-
-
2.5
3.0
2.3
3.3
4.1
3.1
V
VFM
Maximum forward voltage
IF = 8.0 A, TJ = 125 ºC
-
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
-
-
0.31
135
11
10
1000
Maximum reverse
leakage current
IRM
µA
Junction capacitance
Series inductance
pF
nH
CT
LS
20
-
-
8.0
Measured lead to lead 5 mm from package body
-
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
MAX. UNITS
TYP.
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
-
28
35
trr
-
30
ns
Reverse recovery time
trr1
trr2
-
-
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
63
105
4.5
95
160
IRRM1
-
-
8
Peak recovery current
A
IF= 8.0A
dIF/dt = -200 A/µs
VR = 200 V
IRRM2
Qrr1
TJ = 125 ºC
11
6.1
140
335
133
85
-
-
TJ = 25 ºC
380
Reverse recovery charge
nC
Qrr2
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
880
-
dl(rec)M/dt1
dl(rec)M/dt2
-
Peak rate of fall of recovery
current during tb
A/µs
-
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
ºC
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
RthJC
RthJA
RthCS
-
-
1.7
-
-
-
Typical socket mount
K/W
40
-
Mounting surface, flat, smooth and greased
0.25
g
-
-
-
-
6
Weight
oz.
0.21
.
6.0
(5.0)
12
(10)
kgf cm
Mounting torque
Marking device
-
.
(lbf in)
Case style TO-220AC
HFA08TB120
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Page 2 of 6
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N-HFA08TB120
SEMICONDUCTOR
Nell High Power Products
Fig.1 Maximum Forward Voltage Drop Characteristics
Fig.2 Typical Values of Reverse Current vs.
Reverse Voltage
100
1000
T
= 150ºC
J
T
= 125ºC
100
10
J
T
= 100ºC
J
10
1
T
= 25ºC
J
0.1
0.01
T
T
T
= 150 ºC
= 125 ºC
= 25 ºC
J
J
J
1
0
300
600
900
1200
0
2
4
6
8
10
Forward Voltage Drop - V
(V)
Reverse Voltage - V (V)
R
FM
Fig.3 Typical Junction Capacitance vs. Reverse Voltage
100
T
= 25ºC
J
10
1
1
10
100
10000
Reverse Voltage - VR (V)
Fig.4 Maximum Thermal Impedance ZthJC
Characteristics
10
1
P
DM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
0.1
2
Notes:
Single pulse
(thermal resistance)
1. Duty factor D = t1/ t 2
2. Peak T = Pdm x ZthJC + Tc
J
0.01
0.00001
1
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (sec)- t1
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N-HFA08TB120
SEMICONDUCTOR
Nell High Power Products
Fig.5 Typical Reverse Recovery Time vs.dI /dt
Fig.7 Typical Stored Charge vs. dI /dt
F
F
1200
1000
800
600
400
200
0
160
140
120
100
80
V = 160 V
R
I = 8A
F
T =125 ºC
F
J
I =
4A
T =25 ºC
J
I = 8 A
F
I = 4 A
F
60
V = 160 V
R
T =125 ºC
J
T =25 ºC
J
20
100
1000
100
1000
F
F
Fig.6 Typical Recovery Current vs. di /dt
Fig.8 Typical dI(rec)M/dt vs. dIF/dt
F
20
16
12
8
1000
100
10
V = 160 V
R
T =125 ºC
I = 8 A
F
J
F
T =25 ºC
I = 4 A
J
I = 8 A
F
I = 4 A
F
V = 160 V
4
R
T =125 ºC
J
T =25 ºC
J
0
100
1000
100
1000
F
F
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Page 4 of 6
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N-HFA08TB120
SEMICONDUCTOR
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
Ω
0.01
L = 70 µH
D.U.T.
D
dI /dt
F
adjust
IRFP250
G
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr
-
area under curve defined by t
RRM
(1) dI /dt - rate of change of current
rr
F
through zero crossing
and I
t
x I
rr
RRM
(2) IRRM - peak reverse recovery current
Q
=
rr
2
(3) t - reverse recovery time measured
rr
/ -
dt peak rate of change of
(5) dI(rec)M
current during t portion of trr
from zero crossing point of negative
b
going I to point where a line passing
F
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
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Page 5 of 6
RoHS
RoHS
N-HFA08TB120
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
HFA 08 TB
N
120
1
2
3
4
5
1
2
3
4
5
-
-
-
Nell Semiconductors product
FRED family
Current rating (08 = 8 A)
-
-
Package : TB = TO-220AC
Voltage rating (120 = 1200 V)
TO-220AC Package Outline
0.404 [10.26]
0.393 [9.98]
0.186 [4.72]
0.174 [4.42]
Cathode
0.114 [2.90]
0.102 [2.59]
0.058 [1.47]
0.047 [1.19]
Ø0.153 [3.89]
Ø0.149 [3.78]
0.508 [12.90]
0.492 [12.50]
0.362 [9.19]
0.354 [8.99]
0.154 [3.91]
0.134 [3.40]
0.110 [2.79]
0.099 [2.51]
0.531 [13.49]
0.515 [13.08]
0.057 [1.45]
0.047 [1.19]
Cathode
Anode
0.034 [0.86]
0.030 [0.76]
0.018 [0.46]
0.014 [0.36]
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
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Page 6 of 6
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