N-HFA08TB60 [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 8 A; FRED超快软恢复二极管，一个8
| 型号： | N-HFA08TB60 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 8 A |
| 文件： | 总6页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
N-HFA08TB60
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 8 A
Available
RoHS*
COMPLIANT
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I
Very low Q
Specified at operating conditions
RRM
rr
Lead (Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
cathode
Reduced parts count
2
DESCRIPTION
HFA08TB60 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600V
and 8 A continuous current, the HFA08TB60 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
1
3
Cathode Anode
TO-220AC
PRODUCT SUMMARY
extremely low values of peak recovery current (I
)
RRM
and does not exhibit any tendency to “snap-off” during
VR
VF at 8A at 25 ºC
IF(AV)
600 V
the t portion of recovery. The FRED features combine
b
1.7 V
8 A
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA08TB60
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
18 ns
150 ºC
trr (typical)
TJ (maximum)
Qrr (typical)
65 nC
240 A/µS
5.0A
dI(rec)M/dt (typical)
IRRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
600
V
IF
Tc = 100 ºC
8
IFSM
IFRM
60
A
24
Tc = 25 ºC
36
14
Maximum power dissipation
PD
W
Tc = 100 ºC
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
ºC
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Page 1 of 6
RoHS
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N-HFA08TB60
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
(T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
TYP.
UNITS
MIN.
Cathode to anode
breakdown voltage
-
-
VBR
IR = 100 µA
600
IF = 8.0 A
IF = 16 A
-
-
1.4
1.7
1.4
1.7
2.1
1.7
V
VFM
Maximum forward voltage
IF = 8.0 A, TJ = 125 ºC
-
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
-
-
0.3
100
10
5.0
500
Maximum reverse
leakage current
IRM
µA
Junction capacitance
Series inductance
pF
nH
CT
LS
25
-
-
8.0
Measured lead to lead 5 mm from package body
-
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
MAX. UNITS
TYP.
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
-
-
25
trr
-
18
ns
Reverse recovery time
trr1
trr2
-
-
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
37
55
55
90
IRRM1
-
-
5.0
3.5
Peak recovery current
A
IF= 8.0A
dIF/dt = -200 A/µs
VR = 200 V
IRRM2
Qrr1
TJ = 125 ºC
8.0
4.5
65
-
-
TJ = 25 ºC
138
Reverse recovery charge
nC
Qrr2
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
124
240
210
360
-
dl(rec)M/dt1
dl(rec)M/dt2
-
Peak rate of fall of recovery
current during tb
A/µs
-
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
ºС
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
RthJC
RthJA
RthCS
-
-
3.5
Typical socket mount
-
-
-
80
-
K/W
Mounting surface, flat, smooth and greased
0.5
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf . cm
(lbf . in)
Mounting torque
Marking device
-
Case style TO-220AC
HFA08TB60
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Page 2 of 6
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N-HFA08TB60
SEMICONDUCTOR
Nell High Power Products
Fig.1 Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig.2 Typical Reverse Current vs. Reverse Voltage
100
10
1000
T
= 150 °С
J
100
10
T
= 125 °C
J
1
0.1
1
T
= 25 ºC
J
T
T
T
= 150 °С
= 125 °С
= 25 °С
J
J
J
0.01
0.001
0.1
0.4
100
200
300
400
500
600
0
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Reverse Voltage (V)
V
-
Forward Voltage Drop (V)
FM
Fig.3 Typical Junction Capacitance vs. Reverse Voltage
100
T
= 25 °С
J
10
1
1
10
100
1000
V
- Reverse Voltage (V)
R
Fig.4 Maximum Thermal Impedance Z
Characteristics
thJC
1
P
DM
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t2
0.1
Notes:
Single pulse
(thermal response)
1. Duty factor D = t1/ t 2
2. Peak T = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
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N-HFA08TB60
SEMICONDUCTOR
Nell High Power Products
Fig.5 Typical Reverse Recovery Time vs. dIF/dt
Fig.6 Typical Recovery Current vs. dIF/dt
20
15
10
5
80
60
40
20
0
V
T
= 200 V
= 125 °С
= 25 °С
R
I
I
I
= 16 A
= 8 A
= 4 A
F
F
F
J
J
T
I
I
I
= 16 A
= 8 A
= 4 A
F
F
F
V
T
= 200 V
= 125 °С
= 25 °С
R
J
J
T
0
100
1000
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig.8 Typical dI(rec)M/dt vs. dIF/dt
Fig.7 Typical Stored Charge vs. dIF/dtI
500
400
300
10 000
1000
100
V
= 200 V
= 125 °С
= 25 °С
R
J
T
I
I
I
= 16 A
= 8 A
= 4 A
F
F
F
T
J
I
F
F
= 16 A
= 8 A
= 4 A
F
I
I
200
100
0
V
T
= 200 V
= 125 °С
= 25 °С
R
J
J
T
100
1000
100
1000
dIF/dt (A/µs)
dI /dt (A/µs)
F
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Page 4 of 6
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RoHS
N-HFA08TB60
SEMICONDUCTOR
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
/dt
dI
F
adjust
IRFP250
G
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dI /dt - rate of change of current
F
and IRRM
through zero crossing
t
x l
2
rr
RRM
(2) IRRM - peak reverse recovery current
Q
=
rr
(3) t - reverse recovery time measured
rr
(5) dI(rec)M/dt - peak rate of change of
from zero crossing point of negative
current during t portion of trr
b
going I to point where a line passing
F
through 0.75 IRRM and 0.50RIRM
extrapolated to zero current.
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Page 5 of 6
RoHS
RoHS
N-HFA08TB60
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
HFA 08 TB
N
60
1
2
3
4
5
1
2
3
4
5
-
-
-
Nell Semiconductors product
FRED family
Current rating (08 = 8 A)
-
-
Package : TB = TO-220AC
Voltage rating (60 = 600 V)
TO-220AC Package Outline
0.404 [10.26]
0.393 [9.98]
0.186 [4.72]
0.174 [4.42]
Cathode
0.114 [2.90]
0.102 [2.59]
0.058 [1.47]
0.047 [1.19]
Ø0.153 [3.89]
Ø0.149 [3.78]
0.508 [12.90]
0.492 [12.50]
0.362 [9.19]
0.354 [8.99]
0.154 [3.91]
0.134 [3.40]
0.110 [2.79]
0.099 [2.51]
0.531 [13.49]
0.515 [13.08]
0.057 [1.45]
0.047 [1.19]
Cathode
Anode
0.034 [0.86]
0.030 [0.76]
0.018 [0.46]
0.014 [0.36]
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
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Page 6 of 6
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