NTE229 [NTE]
Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp; 硅NPN晶体管甚高频振荡器，混频器， IF放大器
| 型号： | NTE229 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE229
Silicon NPN Transistor
VHF Oscillator, Mixer, IF Amp
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0
30
3
–
–
–
–
–
–
–
–
–
V
V
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
V(BR)EBO IE = 100µA, IC = 0
ICBO
hFE
VCB = 30V, IE = 0
–
200
225
–
nA
IC = 5mA, VCE = 10V
30
30
–
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0
V
V
Base–Emitter ON Voltage
VBE(on) IC = 5mA, VCE = 10V
0.85
–
Current Gain–Bandwidth Product
fT
IC = 5mA, VCE = 10V,
f = 100MHz
500
MHz
Power Gain
Gpe
VCC = 12V, VBB = 2.5V,
f = 45MHz
28
–
–
dB
Collector–Base Capacitance
Noise Figure
Ccb
NF
IE = 0, VCB = 15V, f = 1MHz
VCC = 12V, f = 45MHz
–
–
–
–
0.4
6
pF
dB
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
B E C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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