BGA2712,115 [NXP]

BGA2712 - MMIC wideband amplifier TSSOP 6-Pin;
BGA2712,115
型号: BGA2712,115
厂家: NXP    NXP
描述:

BGA2712 - MMIC wideband amplifier TSSOP 6-Pin

射频 微波
文件: 总12页 (文件大小:104K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BGA2712  
MMIC wideband amplifier  
Product specification  
2002 Sep 10  
Supersedes data of 2002 Jan 31  
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
FEATURES  
PINNING  
PIN  
Internally matched to 50   
DESCRIPTION  
Wide frequency range (3.2 GHz at 3 dB bandwidth)  
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)  
1
2, 5  
3
VS  
GND2  
RF out  
GND1  
RF in  
5 dBm saturated output power at 1 GHz  
Good linearity (11 dBm IP3(out) at 1 GHz)  
Unconditionally stable (K > 1.5).  
4
6
APPLICATIONS  
6
1
5
2
4
3
1
LNB IF amplifiers  
Cable systems  
ISM  
6
3
4
2, 5  
General purpose.  
Top view  
MAM455  
DESCRIPTION  
Marking code: E2-.  
Silicon Monolithic Microwave Integrated Circuit (MMIC)  
wideband amplifier with internal matching circuit in a 6-pin  
SOT363 SMD plastic package.  
Fig.1 Simplified outline (SOT363) and symbol.  
QUICK REFERENCE DATA  
SYMBOL  
VS  
PARAMETER  
DC supply voltage  
CONDITIONS  
TYP.  
MAX.  
UNIT  
5
6
V
IS  
s212  
DC supply current  
insertion power gain  
noise figure  
12.3  
21.3  
3.9  
mA  
dB  
f = 1 GHz  
NF  
f = 1 GHz  
f = 1 GHz  
dB  
PL(sat)  
saturated load power  
4.8  
dBm  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134)  
SYMBOL  
VS  
PARAMETER  
DC supply voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
RF input AC coupled  
6
V
IS  
supply current  
35  
mA  
mW  
C  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
operating junction temperature  
maximum drive power  
Ts 90 C  
200  
+150  
150  
10  
65  
C  
PD  
dBm  
CAUTION  
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport  
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.  
2002 Sep 10  
2
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-s  
thermal resistance from junction to  
solder point  
Ptot = 200 mW; Ts 90 C  
300  
K/W  
CHARACTERISTICS  
VS = 5 V; IS = 12.3 mA; Tj = 25 C; unless otherwise specified.  
SYMBOL PARAMETER CONDITIONS  
IS supply current  
MIN.  
TYP.  
12.3  
MAX.  
UNIT  
9
15  
22  
22  
23  
23  
22  
21  
mA  
s212  
insertion power gain  
f = 100 MHz  
f = 1 GHz  
20  
20  
20  
20  
19  
16  
12  
8
20.8  
21.3  
22  
dB  
dB  
f = 1.8 GHz  
f = 2.2 GHz  
f = 2.6 GHz  
f = 3 GHz  
dB  
22  
dB  
21.2  
19.3  
14  
dB  
dB  
RL IN  
RL OUT  
s122  
NF  
return losses input  
return losses output  
isolation  
f = 1 GHz  
dB  
f = 2.2 GHz  
f = 1 GHz  
10  
dB  
17  
15  
31  
36  
20  
dB  
f = 2.2 GHz  
f = 1.6 GHz  
f = 2.2 GHz  
f = 1 GHz  
18  
dB  
33  
dB  
39  
dB  
noise figure  
3.9  
4.3  
3.2  
2
4.3  
4.7  
dB  
f = 2.2 GHz  
dB  
BW  
K
bandwidth  
at s212 3 dB below flat gain at 1 GHz 2.8  
GHz  
stability factor  
f = 1 GHz  
1.5  
2.5  
3
f = 2.2 GHz  
3
PL(sat)  
PL 1 dB  
IP3(in)  
IP3(out)  
saturated load power f = 1 GHz  
f = 2.2 GHz  
4.8  
1.3  
0.2  
2  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
0
load power  
at 1 dB gain compression; f = 1 GHz  
2  
4  
12  
14  
9
at 1 dB gain compression; f = 2.2 GHz  
input intercept point  
f = 1 GHz  
10  
16  
11  
f = 2.2 GHz  
output intercept point f = 1 GHz  
f = 2.2 GHz  
4
6
2002 Sep 10  
3
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
APPLICATION INFORMATION  
Figure 2 shows a typical application circuit for the  
BGA2712 MMIC. The device is internally matched to 50 ,  
and therefore does not need any external matching. The  
value of the input and output DC blocking capacitors C2  
and C3 should not be more than 100 pF for applications  
above 100 MHz. However, when the device is operated  
below 100 MHz, the capacitor value should be increased.  
DC-block  
100 pF  
DC-block  
100 pF  
DC-block  
100 pF  
handbook, halfpage  
input  
output  
MGU437  
The 22 nF supply decoupling capacitor C1 should be  
located as closely as possible to the MMIC.  
Fig.3 Easy cascading application circuit.  
Separate paths must be used for the ground planes of the  
ground pins GND1 and GND2, and these paths must be as  
short as possible. When using vias, use multiple vias per  
pin in order to limit ground path inductance.  
mixer  
handbook, halfpage  
from RF  
circuit  
to IF circuit  
or demodulator  
wideband  
amplifier  
MGU438  
V
handbook, halfpage  
s
oscillator  
C1  
V
s
Fig.4 Application as IF amplifier.  
RF in  
RF out  
RF input  
RF output  
C2  
C3  
GND1  
GND2  
MGU435  
mixer  
handbook, halfpage  
to IF circuit  
or demodulator  
antenna  
Fig.2 Typical application circuit.  
LNA  
wideband  
amplifier  
MGU439  
oscillator  
Figure 3 shows two cascaded MMICs. This configuration  
doubles overall gain while preserving broadband  
characteristics. Supply decoupling and grounding  
conditions for each MMIC are the same as those for the  
circuit of Fig.2.  
Fig.5 Application as RF amplifier.  
The excellent wideband characteristics of the MMIC make  
it an ideal building block in IF amplifier applications such  
as LBNs (see Fig.4).  
mixer  
handbook, halfpage  
from modulation  
or IF circuit  
to power  
amplifier  
As a buffer amplifier between an LNA and a mixer in a  
receiver circuit, the MMIC offers an easy matching, low  
noise solution (see Fig.5).  
wideband  
amplifier  
MGU440  
oscillator  
In Fig.6 the MMIC is used as a driver to the power amplifier  
as part of a transmitter circuit. Good linear performance  
and matched input and output offer quick design solutions  
in such applications.  
Fig.6 Application as driver amplifier.  
2002 Sep 10  
4
 
 
 
 
 
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
90°  
+1  
1.0  
0.8  
0.6  
0.4  
0.2  
0
135°  
45°  
+2  
+0.5  
+0.2  
+5  
100 MHz  
4 GHz  
0.2  
0.5  
2
5
180°  
0
0°  
5  
0.2  
0.5  
2  
45°  
135°  
1  
MLD904  
1.0  
90°  
IS = 12.3 mA; VS = 5 V; PD = 30 dBm; ZO = 50   
Fig.7 Input reflection coefficient (s11); typical values.  
90°  
+1  
1.0  
0.8  
0.6  
0.4  
0.2  
0
135°  
+0.2  
45°  
+2  
+0.5  
+5  
4 GHz  
0.2  
0.5  
2
5
180°  
0
0°  
100 MHz  
5  
0.2  
0.5  
2  
45°  
135°  
1  
90°  
MLD905  
1.0  
IS = 12.3 mA; VS = 5 V; PD = 30 dBm; ZO = 50   
Fig.8 Output reflection coefficient (s22); typical values.  
5
2002 Sep 10  
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
MLD906  
MLD907  
0
25  
handbook, halfpage  
handbook, halfpage  
2
s
12  
(dB)  
2
s
21  
10  
(dB)  
20  
20  
30  
(1)  
(2)  
15  
(3)  
40  
50  
10  
0
0
1000  
2000  
3000  
4000  
1000  
2000  
3000  
4000  
f (MHz)  
f (MHz)  
PD = 30 dBm; ZO = 50   
(1) IS = 15.1 mA; VS = 5.5 V.  
(2) IS = 12.3 mA; VS = 5 V.  
(3) IS = 10.1 mA; VS = 4.5 V.  
IS = 12.3 mA; VS = 5 V; PD = 30 dBm; ZO = 50   
Fig.9 Isolation (s122) as a function of frequency;  
Fig.10 Insertion gain (s212) as a function of  
typical values.  
frequency; typical values.  
MLD908  
MLD909  
10  
10  
handbook, halfpage  
handbook, halfpage  
P
L
P
L
(dBm)  
(dBm)  
(1)  
5
5
(2)  
(1)  
(2)  
(3)  
0
0
(3)  
5  
5  
10  
10  
30  
20  
10  
0
30  
20  
10  
0
P
(dBm)  
P
(dBm)  
D
D
f = 1 GHz; ZO = 50   
(1) VS = 5.5 V.  
(2) VS = 5 V.  
f = 2.2 GHz; ZO = 50   
(1) VS = 5.5 V.  
(2) VS = 5 V.  
(3)  
V
S = 4.5 V.  
(3) VS = 4.5 V.  
Fig.11 Load power as a function of drive power at  
1 GHz; typical values.  
Fig.12 Load power as a function of drive power at  
2.2 GHz; typical values.  
2002 Sep 10  
6
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
MLD903  
MLD902  
6
10  
handbook, halfpage  
handbook, halfpage  
NF  
K
8
(dB)  
5
6
4
(1)  
(3)  
4
(2)  
3
2
2
0
0
0
1000  
2000  
3000  
1000  
2000  
3000  
4000  
f (MHz)  
f (MHz)  
ZO = 50   
(1) IS = 15.1 mA; VS = 5.5 V.  
(2) IS = 12.3 mA; VS = 5 V.  
(3) IS = 10.1 mA; VS = 4.5 V.  
IS = 12.3 mA; VS = 5 V; ZO = 50   
Fig.13 Noise figure as a function of frequency;  
typical values.  
Fig.14 Stability factor as a function of frequency;  
typical values.  
2002 Sep 10  
7
Scattering parameters  
VS = 5 V; IS = 12.3 mA; PD = 30 dBm; ZO = 50 ; Tamb = 25 C;  
s11  
MAGNITUDE  
s21  
MAGNITUDE  
s12  
MAGNITUDE  
s22  
MAGNITUDE  
K-  
FACTOR  
f (MHz)  
ANGLE  
(deg)  
ANGLE  
(deg)  
ANGLE  
(deg)  
ANGLE  
(deg)  
(ratio)  
(ratio)  
(ratio)  
(ratio)  
100  
200  
0.04752  
0.05643  
0.09546  
0.13547  
0.17466  
0.20739  
0.24036  
0.26469  
0.29368  
0.31261  
0.31986  
0.32544  
0.31554  
0.29374  
0.26599  
0.21222  
0.17076  
0.14479  
0.11730  
0.08946  
0.06606  
13.48  
22.73  
10.9826  
11.0172  
11.0842  
11.1812  
11.3239  
11.5760  
11.8439  
12.1222  
12.3892  
12.5808  
12.6359  
12.4802  
12.2649  
11.5087  
10.4126  
9.17830  
8.12024  
7.38827  
6.96284  
6.62125  
6.32249  
1.753  
6.898  
15.64  
24.08  
32.64  
41.38  
50.97  
61.14  
72.07  
83.89  
96.79  
110.7  
125.2  
139.8  
152.8  
163.8  
171.0  
176.5  
177.3  
0.03355  
0.03308  
0.03111  
0.02829  
0.02501  
0.02145  
0.01788  
0.01489  
0.01262  
0.01132  
0.01102  
0.01151  
0.01238  
0.01322  
0.01362  
0.01335  
0.01239  
0.01150  
0.01108  
0.01107  
0.01178  
2.342  
7.340  
15.47  
21.84  
26.57  
30.44  
31.20  
28.60  
22.41  
12.86  
2.369  
5.585  
0.07706  
0.07237  
0.07314  
0.07471  
0.08218  
0.10113  
0.11792  
0.13314  
0.14376  
0.14606  
0.13749  
0.11928  
0.08992  
0.05626  
0.02424  
0.02731  
0.04752  
0.06279  
0.07643  
0.09760  
0.12925  
170.0  
164.8  
130.7  
101.8  
72.30  
47.04  
25.82  
10.96  
1.624  
13.51  
24.90  
37.21  
51.50  
68.53  
110.2  
159.1  
135.0  
132.1  
142.1  
153.5  
160.6  
1.5  
1.5  
1.6  
1.7  
1.9  
2.0  
2.3  
2.6  
3.0  
3.2  
3.2  
3.1  
3.0  
3.1  
3.3  
4.0  
4.9  
5.8  
6.4  
6.7  
6.6  
400  
39.62  
600  
37.16  
800  
32.62  
1000  
1200  
1400  
1600  
1800  
2000  
2200  
2400  
2600  
2800  
3000  
3200  
3400  
3600  
3800  
4000  
27.40  
23.23  
18.36  
13.54  
8.127  
1.984  
4.878  
13.05  
21.53  
28.39  
31.80  
31.52  
32.14  
35.25  
46.06  
64.65  
9.990  
11.44  
10.70  
9.622  
10.22  
15.36  
19.97  
171.3  
27.62  
165.6  
34.46  
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
PACKAGE OUTLINE  
Plastic surface-mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
L
p
w
M B  
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-08  
06-03-16  
SOT363  
SC-88  
2002 Sep 10  
9
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DEFINITIONS  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Product specification The information and data  
provided in a Product data sheet shall define the  
specification of the product as agreed between NXP  
Semiconductors and its customer, unless NXP  
Semiconductors and customer have explicitly agreed  
otherwise in writing. In no event however, shall an  
agreement be valid in which the NXP Semiconductors  
product is deemed to offer functions and qualities beyond  
those described in the Product data sheet.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in life support, life-critical or safety-critical systems or  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
DISCLAIMERS  
Limited warranty and liability Information in this  
document is believed to be accurate and reliable.  
However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to  
the accuracy or completeness of such information and  
shall have no liability for the consequences of use of such  
information.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
In no event shall NXP Semiconductors be liable for any  
indirect, incidental, punitive, special or consequential  
damages (including - without limitation - lost profits, lost  
savings, business interruption, costs related to the  
removal or replacement of any products or rework  
charges) whether or not such damages are based on tort  
(including negligence), warranty, breach of contract or any  
other legal theory.  
Customers are responsible for the design and operation of  
their applications and products using NXP  
Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole  
responsibility to determine whether the NXP  
Notwithstanding any damages that customer might incur  
for any reason whatsoever, NXP Semiconductors’  
aggregate and cumulative liability towards customer for  
the products described herein shall be limited in  
accordance with the Terms and conditions of commercial  
sale of NXP Semiconductors.  
Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as  
for the planned application and use of customer’s third  
party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks  
associated with their applications and products.  
2002 Sep 10  
10  
 
 
NXP Semiconductors  
Product specification  
MMIC wideband amplifier  
BGA2712  
NXP Semiconductors does not accept any liability related  
to any default, damage, costs or problem which is based  
on any weakness or default in the customer’s applications  
or products, or the application or use by customer’s third  
party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and  
products using NXP Semiconductors products in order to  
avoid a default of the applications and the products or of  
the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this  
respect.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Non-automotive qualified products Unless this data  
sheet expressly states that this specific NXP  
Semiconductors product is automotive qualified, the  
product is not suitable for automotive use. It is neither  
qualified nor tested in accordance with automotive testing  
or application requirements. NXP Semiconductors accepts  
no liability for inclusion and/or use of non-automotive  
qualified products in automotive equipment or  
applications.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) will cause permanent damage to  
the device. Limiting values are stress ratings only and  
(proper) operation of the device at these or any other  
conditions above those given in the Recommended  
operating conditions section (if present) or the  
Characteristics sections of this document is not warranted.  
Constant or repeated exposure to limiting values will  
permanently and irreversibly affect the quality and  
reliability of the device.  
In the event that customer uses the product for design-in  
and use in automotive applications to automotive  
specifications and standards, customer (a) shall use the  
product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and  
specifications, and (b) whenever customer uses the  
product for automotive applications beyond NXP  
Semiconductors’ specifications such use shall be solely at  
customer’s own risk, and (c) customer fully indemnifies  
NXP Semiconductors for any liability, damages or failed  
product claims resulting from customer design and use of  
the product for automotive applications beyond NXP  
Semiconductors’ standard warranty and NXP  
Terms and conditions of commercial sale NXP  
Semiconductors products are sold subject to the general  
terms and conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an  
individual agreement is concluded only the terms and  
conditions of the respective agreement shall apply. NXP  
Semiconductors hereby expressly objects to applying the  
customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Semiconductors’ product specifications.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
2002 Sep 10  
11  
NXP Semiconductors  
provides High Performance Mixed Signal and Standard Product  
solutions that leverage its leading RF, Analog, Power Management,  
Interface, Security and Digital Processing expertise  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2010  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R77/02/pp12  
Date of release: 2002 Sep 10  

相关型号:

BGA2714

MMIC wideband amplifier
NXP

BGA2714,115

BGA2714 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2715

MMIC wideband amplifier
NXP

BGA2715,115

BGA2715 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2716

MMIC wideband amplifier
NXP

BGA2716,115

BGA2716 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2717

MMIC wideband amplifier
NXP

BGA2717,115

BGA2717 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2748

MMIC wideband amplifier
NXP

BGA2748,115

BGA2748 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2748T/R

RF/Microwave Amplifier, 1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SC-88, SOT-363, 6 PIN
NXP

BGA2771

MMIC wideband amplifier
NXP