BLF4G10LS-120,112 [NXP]
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型号: | BLF4G10LS-120,112 |
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描述: | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power 放大器 CD 晶体管 |
文件: | 总13页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BLF4G10LS-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1:
Typical performance
f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values.
Mode of operation VDS
(V)
PL
(W)
Gp
(dB) (%)
ηD
ACPR400
(dBc)
ACPR600
(dBc)
EVM
(%)
IMD3
(dBc)
CW
28
28
28
120
19
19
57
40
46
-
-
-
-
GSM EDGE
2-tone
48 (AV)
−61[1]
−72[2]
1.5
-
-
120 (PEP) 19
-
-
−31
[1] ACPR400 at 30 kHz resolution bandwidth
[2] ACPR600 at 30 kHz resolution bandwidth
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply
voltage of 28 V and an IDq of 650 mA
◆ Load power = 48 W (AV)
◆ Gain = 19 dB (typ)
◆ Efficiency = 40 % (typ)
◆ ACPR400 = −61 dBc (typ)
◆ ACPR600 = −72 dBc (typ)
◆ EVMrms = 1.5 % (typ)
■ Easy power control
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (800 MHz to 1000 MHz)
■ Internally matched for ease of use
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 868 MHz to 961 MHz frequency range.
2. Pinning information
Table 2:
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
3
1
3
2
2
gate
[1]
2
3
source
sym039
[1] Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
earless flanged LDMOST ceramic package; 2 leads
Version
BLF4G10LS-120 -
SOT502B
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5
+15
12
V
-
A
Tstg
Tj
storage temperature
junction temperature
−65
+150
200
°C
°C
-
5. Thermal characteristics
Table 5:
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
Tcase = 80 °C
PL = 60 W
Min
Typ
Max Unit
thermal resistance from
junction to case
-
-
0.62 0.71 K/W
0.52 0.61 K/W
PL = 120 W
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
2 of 13
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ Max Unit
V(BR)DSS
drain-source breakdown VGS = 0 V; ID = 0.9 mA
voltage
65
-
-
V
V
V
VGS(th)
VGSq
gate-source threshold
voltage
VDS = 10 V; ID = 180 mA
2.5
3.1
3.5
gate-source quiescent
voltage
VDS = 28 V; ID = 900 mA
2.70
3.20 3.70
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 9 V;
-
-
2.5
-
µA
27
30
A
V
DS = 10 V
IGSS
gfs
gate leakage current
VGS = 15 V; VDS = 0 V
VDS = 10 V; ID = 10 A
-
-
-
300
-
nA
S
forward
9.0
transconductance
RDS(on)
Crs
drain-source on-state
resistance
VGS = VGS(th) + 6 V;
ID = 6 A
-
-
90
-
-
mΩ
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
2.5
pF
7. Application information
Table 7:
Mode of operation: GSM EDGE; f = 920 MHz and 960 MHz; RF performance at VDS = 28 V;
Dq = 650 mA; Tcase = 25 °C; unless otherwise specified, in a class AB production test circuit.
Application information
I
Symbol
Parameter
Conditions
Min Typ Max Unit
17.5 19 dB
−8.0 −5.5 dB
35.8 40
Gp
power gain
PL(AV) = 48 W
PL(AV) = 48 W
PL(AV) = 48 W
-
IRL
input return loss
drain efficiency
-
ηD
-
%
ACPR400
ACPR600
EVMrms
EVMM
adjacent channel power ratio (400 kHz) PL(AV) = 48 W
adjacent channel power ratio (600 kHz) PL(AV) = 48 W
-
-
-
-
−61 −58 dBc
−72 −68 dBc
rms EDGE signal distortion error
peak EDGE signal distortion error
PL(AV) = 48 W
PL(AV) = 48 W
1.5 2.5
8.5
%
%
5
7.1 Ruggedness in class-AB operation
The BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 650 mA; PL = 120 W (CW); f = 960 MHz.
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 13
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
001aac410
001aac411
60
20
70
60
50
40
30
20
10
0
20
η
(%)
η
D
(%)
D
G
G
p
(dB)
p
(dB)
G
p
G
p
50
40
30
20
10
0
18
18
η
D
16
14
12
10
16
14
12
10
η
D
0
20 40 60 80 100 120 140 160 180
(W)
0
10 20 30 40 50 60 70 80 90
(W)
P
P
L(AV)
L
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 960 MHz
f = 960 MHz
Fig 1. One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2. Two-tone CW power gain and drain efficiency
as functions of average load power; typical
values
001aac412
001aac413
0
0
IMD
(dBc)
IMD3
(dBc)
−20
−20
(1)
(2)
IMD3
−40
−40
IMD5
(3)
IMD7
(4)
−60
−60
−80
−80
0
20
40
60
P
80
(W)
0
20
40
60
P
80
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 960 MHz
VDS = 28 V; Tcase = 25 °C; f = 960 MHz
(1) IDq = 550 mA
(2) IDq = 650 mA
(3) IDq = 750 mA
(4) IDq = 850 mA
Fig 3. Intermodulation distortion as a function of
average load power; typical values
Fig 4. Third order intermodulation distortion as a
function of average load power; typical values
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
4 of 13
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
001aac414
001aac415
20
50
40
30
20
10
0
−50
G
p
(dB)
η
(%)
D
ACPR
(dBc)
G
p
19
18
17
16
15
−60
−70
−80
−90
ACPR
ACPR
400
η
D
600
0
20
40
60
P
80
(W)
0
20
40
60
P
80
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 960 MHz
f = 960 MHz
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
001aac417
001aac416
−56
4
3
3
2
2
1
1
0
10
EVM
(%)
EVM
(%)
ACPR
(dBc)
8
EVM
M
−60
−64
−68
−72
6
4
ACPR
400
EVM
rms
EVM
rms
2
0
0
10
20
30
40
50
0
20
40
60
P
80
(W)
η
(%)
D
L(AV)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 960 MHz
f = 960 MHz
Fig 7. GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
5 of 13
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V
DS
V
GS
C5
C6
C7
C8
C10
R1
C9
C1
C4
RF in
RF out
C2
C3
001aad830
See Table 8 for list of components.
Fig 9. Class-AB test circuit at f = 960 MHz
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx
xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
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xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
V
DS
V
GS
C6 C7 C8
C10
C5
R1
C9
C1
C3
C4
C2
PHILIPS
BLF4G10-120 rev.1 in
PHILIPS
BLF4G10-120 rev.1 out
001aad831
Striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) (εr = 6.2); thickness = 0.025 inches.
See Table 8 for list of components.
Fig 10. Component layout for 960 MHz test circuit
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
Table 8:
List of components (see Figure 9 and Figure 10)
Component
Description
Value
Dimensions Catalogue number
[1]
[1]
[1]
C1, C4, C5, C6 multilayer ceramic chip
capacitor
68 pF
C2
C3
C7
multilayer ceramic chip
capacitor
5.1 pF
3.0 pF
1 µF
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
1812X7R105KL2AB
C8, C9
C10
tantalum capacitor
10 µF; 35 V
220 µF
Philips electrolytic
capacitor
R1
Philips chip resistor
5.1 Ω
0603
[1] American Technical Ceramics type 100B or capacitor of same quality.
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
8 of 13
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502B
Fig 11. Package outline SOT502B
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
9 of 13
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 9:
Acronym
CDMA
CW
Abbreviations
Description
Code Division Multiple Access
Continuous Wave
EDGE
ESR
Enhanced Data rates for GSM Evolution
Equivalent Series Resistance
Error Vector Magnitude
EVM
GSM
Global System for Mobile communications
quiescent drain current
IDq
LDMOS
PEP
Laterally Diffused Metal Oxide Semiconductor
Peak Envelope Power
RF
Radio Frequency
SMD
Surface Mount Device
VSWR
Voltage Standing Wave Ratio
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
10 of 13
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
11. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
Change notice Doc. number
9397 750 14547
Supersedes
BLF4G10LS-120_1 20060110
Product data sheet
-
-
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
11 of 13
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14547
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
12 of 13
BLF4G10LS-120
Philips Semiconductors
UHF power LDMOS transistor
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 10 January 2006
Document number: 9397 750 14547
Published in The Netherlands
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