BLF4G10LS-120,112 [NXP]

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power;
BLF4G10LS-120,112
型号: BLF4G10LS-120,112
厂家: NXP    NXP
描述:

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power

放大器 CD 晶体管
文件: 总13页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BLF4G10LS-120  
UHF power LDMOS transistor  
Rev. 01 — 10 January 2006  
Product data sheet  
1. Product profile  
1.1 General description  
120 W LDMOS power transistor for base station applications at frequencies from  
800 MHz to 1000 MHz.  
Table 1:  
Typical performance  
f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values.  
Mode of operation VDS  
(V)  
PL  
(W)  
Gp  
(dB) (%)  
ηD  
ACPR400  
(dBc)  
ACPR600  
(dBc)  
EVM  
(%)  
IMD3  
(dBc)  
CW  
28  
28  
28  
120  
19  
19  
57  
40  
46  
-
-
-
-
GSM EDGE  
2-tone  
48 (AV)  
61[1]  
72[2]  
1.5  
-
-
120 (PEP) 19  
-
-
31  
[1] ACPR400 at 30 kHz resolution bandwidth  
[2] ACPR600 at 30 kHz resolution bandwidth  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply  
voltage of 28 V and an IDq of 650 mA  
Load power = 48 W (AV)  
Gain = 19 dB (typ)  
Efficiency = 40 % (typ)  
ACPR400 = 61 dBc (typ)  
ACPR600 = 72 dBc (typ)  
EVMrms = 1.5 % (typ)  
Easy power control  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (800 MHz to 1000 MHz)  
Internally matched for ease of use  
 
 
 
 
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
1.3 Applications  
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier  
applications in the 868 MHz to 961 MHz frequency range.  
2. Pinning information  
Table 2:  
Pinning  
Pin  
1
Description  
drain  
Simplified outline  
Symbol  
1
3
1
3
2
2
gate  
[1]  
2
3
source  
sym039  
[1] Connected to flange  
3. Ordering information  
Table 3:  
Ordering information  
Type number  
Package  
Name  
Description  
earless flanged LDMOST ceramic package; 2 leads  
Version  
BLF4G10LS-120 -  
SOT502B  
4. Limiting values  
Table 4:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGS  
ID  
Parameter  
Conditions  
Min  
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
-
0.5  
+15  
12  
V
-
A
Tstg  
Tj  
storage temperature  
junction temperature  
65  
+150  
200  
°C  
°C  
-
5. Thermal characteristics  
Table 5:  
Symbol  
Rth(j-case)  
Thermal characteristics  
Parameter  
Conditions  
Tcase = 80 °C  
PL = 60 W  
Min  
Typ  
Max Unit  
thermal resistance from  
junction to case  
-
-
0.62 0.71 K/W  
0.52 0.61 K/W  
PL = 120 W  
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
2 of 13  
 
 
 
 
 
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
6. Characteristics  
Table 6:  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ Max Unit  
V(BR)DSS  
drain-source breakdown VGS = 0 V; ID = 0.9 mA  
voltage  
65  
-
-
V
V
V
VGS(th)  
VGSq  
gate-source threshold  
voltage  
VDS = 10 V; ID = 180 mA  
2.5  
3.1  
3.5  
gate-source quiescent  
voltage  
VDS = 28 V; ID = 900 mA  
2.70  
3.20 3.70  
IDSS  
IDSX  
drain leakage current  
drain cut-off current  
VGS = 0 V; VDS = 28 V  
VGS = VGS(th) + 9 V;  
-
-
2.5  
-
µA  
27  
30  
A
V
DS = 10 V  
IGSS  
gfs  
gate leakage current  
VGS = 15 V; VDS = 0 V  
VDS = 10 V; ID = 10 A  
-
-
-
300  
-
nA  
S
forward  
9.0  
transconductance  
RDS(on)  
Crs  
drain-source on-state  
resistance  
VGS = VGS(th) + 6 V;  
ID = 6 A  
-
-
90  
-
-
mΩ  
feedback capacitance  
VGS = 0 V; VDS = 28 V;  
f = 1 MHz  
2.5  
pF  
7. Application information  
Table 7:  
Mode of operation: GSM EDGE; f = 920 MHz and 960 MHz; RF performance at VDS = 28 V;  
Dq = 650 mA; Tcase = 25 °C; unless otherwise specified, in a class AB production test circuit.  
Application information  
I
Symbol  
Parameter  
Conditions  
Min Typ Max Unit  
17.5 19 dB  
8.0 5.5 dB  
35.8 40  
Gp  
power gain  
PL(AV) = 48 W  
PL(AV) = 48 W  
PL(AV) = 48 W  
-
IRL  
input return loss  
drain efficiency  
-
ηD  
-
%
ACPR400  
ACPR600  
EVMrms  
EVMM  
adjacent channel power ratio (400 kHz) PL(AV) = 48 W  
adjacent channel power ratio (600 kHz) PL(AV) = 48 W  
-
-
-
-
61 58 dBc  
72 68 dBc  
rms EDGE signal distortion error  
peak EDGE signal distortion error  
PL(AV) = 48 W  
PL(AV) = 48 W  
1.5 2.5  
8.5  
%
%
5
7.1 Ruggedness in class-AB operation  
The BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to  
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;  
IDq = 650 mA; PL = 120 W (CW); f = 960 MHz.  
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
3 of 13  
 
 
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
001aac410  
001aac411  
60  
20  
70  
60  
50  
40  
30  
20  
10  
0
20  
η
(%)  
η
D
(%)  
D
G
G
p
(dB)  
p
(dB)  
G
p
G
p
50  
40  
30  
20  
10  
0
18  
18  
η
D
16  
14  
12  
10  
16  
14  
12  
10  
η
D
0
20 40 60 80 100 120 140 160 180  
(W)  
0
10 20 30 40 50 60 70 80 90  
(W)  
P
P
L(AV)  
L
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;  
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;  
f = 960 MHz  
f = 960 MHz  
Fig 1. One-tone CW power gain and drain efficiency  
as functions of load power; typical values  
Fig 2. Two-tone CW power gain and drain efficiency  
as functions of average load power; typical  
values  
001aac412  
001aac413  
0
0
IMD  
(dBc)  
IMD3  
(dBc)  
20  
20  
(1)  
(2)  
IMD3  
40  
40  
IMD5  
(3)  
IMD7  
(4)  
60  
60  
80  
80  
0
20  
40  
60  
P
80  
(W)  
0
20  
40  
60  
P
80  
(W)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;  
f = 960 MHz  
VDS = 28 V; Tcase = 25 °C; f = 960 MHz  
(1) IDq = 550 mA  
(2) IDq = 650 mA  
(3) IDq = 750 mA  
(4) IDq = 850 mA  
Fig 3. Intermodulation distortion as a function of  
average load power; typical values  
Fig 4. Third order intermodulation distortion as a  
function of average load power; typical values  
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
4 of 13  
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
001aac414  
001aac415  
20  
50  
40  
30  
20  
10  
0
50  
G
p
(dB)  
η
(%)  
D
ACPR  
(dBc)  
G
p
19  
18  
17  
16  
15  
60  
70  
80  
90  
ACPR  
ACPR  
400  
η
D
600  
0
20  
40  
60  
P
80  
(W)  
0
20  
40  
60  
P
80  
(W)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;  
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;  
f = 960 MHz  
f = 960 MHz  
Fig 5. GSM EDGE power gain and drain efficiency as  
functions of average load power; typical values  
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as  
a function of average load power; typical values  
001aac417  
001aac416  
56  
4
3
3
2
2
1
1
0
10  
EVM  
(%)  
EVM  
(%)  
ACPR  
(dBc)  
8
EVM  
M
60  
64  
68  
72  
6
4
ACPR  
400  
EVM  
rms  
EVM  
rms  
2
0
0
10  
20  
30  
40  
50  
0
20  
40  
60  
P
80  
(W)  
η
(%)  
D
L(AV)  
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;  
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;  
f = 960 MHz  
f = 960 MHz  
Fig 7. GSM EDGE rms EVM and peak EVM as  
functions of average load power; typical values  
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as  
functions of drain efficiency; typical values  
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
5 of 13  
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V
DS  
V
GS  
C5  
C6  
C7  
C8  
C10  
R1  
C9  
C1  
C4  
RF in  
RF out  
C2  
C3  
001aad830  
See Table 8 for list of components.  
Fig 9. Class-AB test circuit at f = 960 MHz  
 
 
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xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx  
V
DS  
V
GS  
C6 C7 C8  
C10  
C5  
R1  
C9  
C1  
C3  
C4  
C2  
PHILIPS  
BLF4G10-120 rev.1 in  
PHILIPS  
BLF4G10-120 rev.1 out  
001aad831  
Striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) (εr = 6.2); thickness = 0.025 inches.  
See Table 8 for list of components.  
Fig 10. Component layout for 960 MHz test circuit  
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
Table 8:  
List of components (see Figure 9 and Figure 10)  
Component  
Description  
Value  
Dimensions Catalogue number  
[1]  
[1]  
[1]  
C1, C4, C5, C6 multilayer ceramic chip  
capacitor  
68 pF  
C2  
C3  
C7  
multilayer ceramic chip  
capacitor  
5.1 pF  
3.0 pF  
1 µF  
multilayer ceramic chip  
capacitor  
multilayer ceramic chip  
capacitor  
1812X7R105KL2AB  
C8, C9  
C10  
tantalum capacitor  
10 µF; 35 V  
220 µF  
Philips electrolytic  
capacitor  
R1  
Philips chip resistor  
5.1 Ω  
0603  
[1] American Technical Ceramics type 100B or capacitor of same quality.  
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
8 of 13  
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
9. Package outline  
Earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT  
1
1
1
2
12.83  
12.57  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
20.70 9.91  
20.45 9.65  
0.15  
0.08  
0.25  
mm  
0.505  
0.495  
0.067  
0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
0.815 0.390  
0.805 0.380  
0.006  
0.003  
0.010  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
99-12-28  
03-01-10  
SOT502B  
Fig 11. Package outline SOT502B  
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
9 of 13  
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
10. Abbreviations  
Table 9:  
Acronym  
CDMA  
CW  
Abbreviations  
Description  
Code Division Multiple Access  
Continuous Wave  
EDGE  
ESR  
Enhanced Data rates for GSM Evolution  
Equivalent Series Resistance  
Error Vector Magnitude  
EVM  
GSM  
Global System for Mobile communications  
quiescent drain current  
IDq  
LDMOS  
PEP  
Laterally Diffused Metal Oxide Semiconductor  
Peak Envelope Power  
RF  
Radio Frequency  
SMD  
Surface Mount Device  
VSWR  
Voltage Standing Wave Ratio  
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
10 of 13  
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
11. Revision history  
Table 10: Revision history  
Document ID  
Release date Data sheet status  
Change notice Doc. number  
9397 750 14547  
Supersedes  
BLF4G10LS-120_1 20060110  
Product data sheet  
-
-
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
11 of 13  
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
12. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
13. Definitions  
Short-form specification The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Limiting values definition Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Application information Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
makes no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
15. Trademarks  
Notice — All referenced brands, product names, service names and  
14. Disclaimers  
trademarks are the property of their respective owners.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
16. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
9397 750 14547  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Product data sheet  
Rev. 01 — 10 January 2006  
12 of 13  
 
 
 
 
 
BLF4G10LS-120  
Philips Semiconductors  
UHF power LDMOS transistor  
17. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
1.1  
1.2  
1.3  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Application information. . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation. . . . . . . . . . 3  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Contact information . . . . . . . . . . . . . . . . . . . . 12  
3
4
5
6
7
7.1  
8
9
10  
11  
12  
13  
14  
15  
16  
© Koninklijke Philips Electronics N.V. 2006  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 10 January 2006  
Document number: 9397 750 14547  
Published in The Netherlands  

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