PHD66NQ03LT [NXP]
N-channel TrenchMOS transistor; N沟道晶体管的TrenchMOS
| 型号： | PHD66NQ03LT |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS transistor |
| 文件： | 总14页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor
Rev. 02 — 10 December 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP66NQ03LT in SOT78 (TO-220AB)
PHB66NQ03LT in SOT404 (D2-PAK)
PHD66NQ03LT in SOT428 (D-PAK).
2. Features
■ Low on-state resistance
■ Fast switching.
3. Applications
■ High frequency computer motherboard DC to DC converters.
4. Pinning information
Table 1:
Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Pin Description
Simplified outline
Symbol
1
2
3
gate (g)
d
s
mb
mb
mb
[1]
drain (d)
source (s)
g
mb mounting base,
connected to drain (d)
MBB076
2
2
1
3
1
3
Top view
MBK091
MBK116
MBK106
1
2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
25
Unit
V
VDS
ID
drain-source voltage (DC)
25 °C ≤ Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
-
drain current (DC)
-
66
A
-
57
A
Ptot
Tj
total power dissipation
-
93
W
junction temperature
-
175
12
°C
mΩ
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
9.1
12.3
16
6. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
25
Unit
V
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 175 °C
-
-
-
-
VDGR
VGS
drain-gate voltage (DC)
gate-source voltage (DC)
peak gate-source voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
25
V
±15
±20
V
VGSM
tp ≤ 50 µs; pulsed;
V
duty cycle 25%; Tj ≤ 150 °C
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; VGS = 10 V
-
57
A
-
40
A
-
66
A
Tmb = 100 °C; VGS = 10 V
-
45
A
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
-
228
93
A
total power dissipation
storage temperature
-
W
°C
°C
−55
−55
+175
+175
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
-
-
57
A
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
228
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
2 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
03aa24
120
120
I
der
P
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
T
200
(oC)
0
50
100
150
200
(oC)
mb
T
mb
Ptot
ID
Pder
=
× 100%
Ider
=
× 100%
-----------------------
-------------------
P
I
°
°
tot(25 C)
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ag19
3
10
I
D
(A)
R
= V
/ I
DS D
DSon
t
= 10 µs
p
2
10
100 µs
1 ms
10
DC
10 ms
100 ms
1
2
10
1
10
V
(V)
DS
Tmb = 25 °C; IDM is single pulse; VGS = 5 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
3 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value Unit
Rth(j-mb) thermal resistance from junction to mounting
base
Figure 4
1.6
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
50
K/W
K/W
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT428 packages
7.1 Transient thermal impedance
03ag18
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
0.05
t
p
P
δ =
T
0.02
single pulse
t
t
p
T
p
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
10
t
(s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
4 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
8. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
25
22
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
1
1.5
2
V
V
V
Tj = 175 °C
0.5
-
-
-
-
Tj = −55 °C
2.3
IDSS
VDS = 25 V; VGS = 0 V
Tj = 25 °C
-
-
-
0.05 10
µA
Tj = 175 °C
-
500 µA
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
10
100 nA
RDSon
drain-source on-state resistance
-
-
12.3 16
mΩ
Tj = 175 °C
22.1 28.8 mΩ
VGS = 10 V; ID = 25 A
Tj = 25 °C
-
9.1
12
mΩ
Dynamic characteristics
gfs
forward transconductance
VDS = 25 V; ID = 30 A
-
-
-
-
-
-
-
-
-
-
-
40
-
-
-
-
S
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13
13.5
7
nC
nC
nC
pF
pF
pF
ns
3.9
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
1150 -
330
180
15
-
-
VDD = 15 V; ID = 25 A; VGS = 5 V;
RG = 5.6 Ω; resistive load
25
90
135 ns
td(off)
tf
turn-off delay time
fall time
25
40
40
ns
ns
25
Source-drain diode
VSD
trr
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
-
-
-
0.95 1.2
V
reverse recovery time
recovered charge
IS = 10 A; dIS/dt = −100 A/µs; VGS = 0 V
32
20
-
-
ns
nC
Qr
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
5 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
03ag20
03ag22
75
75
10 V 6 V 5 V
4.5 V
I
D
T = 25 ºC
j
I
D
V
> I x R
D
DS
DSon
(A)
60
(A)
60
4 V
45
30
15
0
45
30
15
0
3.5 V
= 3 V
175 ºC
V
T = 25 ºC
j
GS
0
0.4
0.8
1.2
1.6
2
(V)
0
1
2
3
4
5
V
(V)
V
GS
DS
Tj = 25 °C
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03af18
03ag21
2
0.02
DSon
R
a
T = 25 ºC
j
V
= 4.5 V
5V
GS
(Ω)
1.6
0.016
1.2
0.8
0.4
0
0.012
0.008
0.004
0
6 V
10 V
0
15
30
45
60
75
-60
0
60
120
180
I
(A)
D
T (ºC)
j
Tj = 25 °C
RDSon
a =
----------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
6 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
03aa33
03aa36
2.5
-1
10
V
I
GS(th)
D
(V)
(A)
max
2
-2
10
typ
-3
1.5
10
min
typ
max
min
-4
-5
-6
1
10
10
10
0.5
0
-60
0
60
120
180
0
0.5
1
1.5
2
2.5
V
3
(V)
T (oC)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ag24
4
10
C
(pF)
3
C
iss
10
C
oss
C
rss
2
10
-1
2
10
1
10
10
V
(V)
DS
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
7 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
03ag25
03ag23
10
75
I
V
GS
T = 25 ºC
j
V
= 0 V
S
GS
(V)
8
(A)
60
I
= 50 A
D
V
= 15 V
DD
6
4
2
0
45
30
15
0
T = 25 ºC
175 ºC
j
0
10
20
30
0
0.3
0.6
0.9
1.2
Q
(nC)
G
V
(V)
SD
Tj = 25 °C and 175 °C; VGS = 0 V
ID = 50 A; VDD = 15 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
8 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
L
1
A
c
UNIT
p
q
Q
1
1
1
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-46
00-09-07
01-02-16
SOT78
3-lead TO-220AB
Fig 14. SOT78 (TO-220AB).
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
9 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-06-25
01-02-12
SOT404
Fig 15. SOT404 (D2-PAK).
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
10 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
A
E
A
2
A
b
D
1
1
2
mounting
base
E
1
D
H
E
L
2
2
L
1
L
1
3
b
b
w
M
A
c
1
e
e
1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
b
E
H
E
max.
D
L
1
min.
A
max.
E
max.
y
D
max.
1
1
(1)
1
A
A
b
2
UNIT
mm
b
c
e
e
1
L
L
w
2
1
2
max.
max.
min.
max.
0.65 0.89
0.45 0.71
0.7
0.5
2.38
2.22
0.89 1.1
0.71 0.9
5.36
5.26
0.4 6.22
0.2 5.98
6.73
6.47
10.4 2.95
9.6
2.55
4.81
4.45
4.57
0.2
0.2
4.0 2.285
0.5
Note
1. Measured from heatsink back to lead.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
98-04-07
99-09-13
SOT428
TO-252
SC-63
Fig 16. SOT428 (D-PAK)
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
11 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
10. Revision history
Table 6:
Revision history
CPCN
Rev Date
Description
02 20011210
-
Includes product data; second version; supersedes initial version 29 August 2001.
• Section 1 “Description” Correction to typing mistake in name.
Product data; initial version
01 20010829
-
9397 750 09119
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 02 — 10 December 2001
12 of 14
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
13 of 14
9397 750 09119
Product data
Rev. 02 — 10 December 2001
PHP/PHB/PHD66NQ03LT
Philips Semiconductors
N-channel TrenchMOS transistor
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 10 December 2001
Document order number: 9397 750 09119
相关型号：
PHD66NQ03LT/T3
TRANSISTOR 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power
NXP
PHD78NQ03LT/T3
TRANSISTOR 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
NXP
©2020 ICPDF网 联系我们和版权申明