UAA3220TS [NXP]
Frequency Shift Keying FSK/Amplitude Shift Keying ASK receiver; 频移键控FSK /幅移键控ASK接收器
| 型号： | UAA3220TS |
| 厂家： | 
NXP |
| 描述： | Frequency Shift Keying FSK/Amplitude Shift Keying ASK receiver |
| 文件： | 总32页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
UAA3220TS
Frequency Shift Keying
(FSK)/Amplitude Shift Keying
(ASK) receiver
1999 Jan 22
Product specification
Supersedes data of 1998 April 10
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
FEATURES
GENERAL DESCRIPTION
• Low cost single-chip ASK or FSK receiver
• Superheterodyne architecture with high integration level
• Few external low cost components and crystal required
• Wide supply voltage range
The UAA3220TS is a fully integrated single-chip receiver,
primarily intended for use in VHF and UHF systems.
It supports both Amplitude Shift Keying (ASK) and
Frequency Shift Keying (FSK) demodulation.
By connecting DEMO1 (pin 10) to ground during
realisation of the receiver module the UAA3220TS works
as an ASK receiver (see Fig.10). By connecting pin 10 as
shown in Fig.9 the UAA3220TS works as an FSK receiver.
The UAA3220TS incorporates a crystal stabilized local
oscillator, frequency multiplier, balanced mixer, post mixer
amplifier, limiter, Received Signal Strength Indicator
(RSSI), FSK demodulator, data filter, data slicer and
power down circuit.
• Low power consumption
• Wide frequency range, 250 to 920 MHz
• High sensitivity
• IF bandwidth determined by application
• High selectivity
• Automotive temperature range
• SSOP24 package.
Applications
• Keyless entry systems
• Car alarm systems
• Remote control systems
• Security systems
• Telemetry systems
• Wireless data transmission
• Domestic appliance.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
2.7
TYP.
MAX.
5.5
UNIT
−
V
ICC
supply current
fi(RF) = 433.92 MHz; FSK mode
operating mode on;
VPWD = 0 V
2.8
4.3
3
5.8
30
mA
operating mode off;
VPWD = VCC
−
µA
ASK mode
Pi(max)(ASK)
maximum input power
BER ≤ 3%
−22
−16
−10
dBm
dBm
Φi(ASK)
sensitivity into pin MIXIN fi(RF) = 433.92 MHz; BER ≤ 3%
−
−119
−113
FSK mode
Pi(max)(FSK)
Φi(FSK)
maximum input power
BER ≤ 3%
−6
0
+1
dBm
dBm
sensitivity into pin MIXIN fi(RF) = 433.92 MHz; BER ≤ 3%
−
−103
−100
1999 Jan 22
2
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
DESCRIPTION
VERSION
UAA3220TS
SSOP24
SOT340-1
plastic shrink small outline package; 24 leads; body width 5.3 mm
BLOCK DIAGRAM
V
DATA CGND
MGND MIXIN
FA
LIN
LFB
19
RSSI CPC
18 17
CPB
16
CPA
15
CCI
24 23
22
21 20
14
13
LIMITER
AMPLIFIER
AM/FM
SWITCH
DEMODULATOR
MIXER
PMA
UAA3220TS
+
DATA SLICER
−
MULTIPLIER
BIAS
OSCILLATOR
×3
×2/×3
1
2
3
4
5
6
7
8
9
10
11
12
GND
MGM742
TEM TN TP
PWD DEMO1 DEMO2
OGND OSE OSB
V
OSC
CC
Fig.1 Block diagram.
1999 Jan 22
3
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
PINNING
SYMBOL PIN
DESCRIPTION
oscillator ground
OGND
OSE
OSB
VCC
1
2
3
4
5
6
7
8
9
oscillator emitter
oscillator base
positive supply voltage
handbook, halfpage
OGND
OSE
MGND
24
1
2
OSC
TEM
TN
oscillator collector
MIXIN
FA
23
22
21
20
frequency multiplier emitter resistor
frequency multiplier negative output
frequency multiplier positive output
power down control input
OSB
3
V
V
4
TP
CC
CCI
PWD
DEMO1
DEMO2
GND
CGND
DATA
CPA
OSC
TEM
LIN
5
10 FM demodulator 1, ASK/FSK switch
11 FM demodulator 2
12 general ground
19 LFB
6
UAA3220TS
TN
RSSI
18
7
TP
8
17 CPC
13 comparator ground
14 data output
PWD
DEMO1
DEMO2
CPB
9
16
15
14
13
CPA
10
11
15 comparator input A
16 comparator input B
17 comparator input C
18 RSSI output
DATA
CGND
CPB
CPC
RSSI
LFB
GND 12
MGM743
19 limiter feedback
LIN
20 limiter input
VCCI
21 IF amplifier positive supply voltage
22 IF amplifier output
23 mixer input
FA
MIXIN
MGND
Fig.2 Pin configuration.
24 mixer ground
1999 Jan 22
4
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
FUNCTIONAL DESCRIPTION
Mixer
Limiter
The limiter is a single-ended input multiple stage amplifier
with high total gain. Amplifier stability is achieved by
means of an external DC feedback capacitor (C21), which
is also used to determine the lower limiter cut-off
frequency. An RSSI signal proportional to the limiter input
signal is provided. Figure 3 shows the DC voltage at pin 18
(RSSI) as a function of the input voltage (RMS value) at
pin 20 (LIN). It also gives the typical IF of 10.7 MHz.
The lower knee of the level curve (see Fig.3) is determined
by the effective noise bandwidth and is, consequently,
slightly higher.
The mixer is a single-balanced emitter-coupled mixer with
internal biasing. Matching of the RF source impedance to
the mixer input requires an external matching network.
Oscillator
The oscillator is based on a transistor connected in
common collector configuration followed by a cascode
stage driving a tuned circuit. The voltage at this tuned
circuit drives the frequency multiplier. The bias current of
the oscillator is set by an off-chip resistor (R40 in the
application diagram of Fig.9) to a typical value of 260 µA at
433.92 MHz (R40 = 1.8 kΩ). The oscillator frequency is
controlled by an off-chip overtone crystal (X40). Off-chip
capacitors between base and emitter (C42) and ground
(C41) make the oscillator transistor appear as having
negative resistance at small signal levels. This causes the
oscillator to start. A parallel resonance circuit (L40 and
C41) connected to the emitter of the oscillator transistor
prevents oscillation at the fundamental frequency of the
crystal. The LC tank circuit at the output of the oscillator is
used to select either the fundamental, the second or the
third harmonic of the oscillator frequency.
IF filter
IF filtering with high selectivity is realized by means of an
external ceramic filter (X20), which feeds the IF from the
PMA to the limiter.
FM demodulator
Coming from the limiter the FSK signal is fed differential to
the input of the FM demodulator. After buffering the signal
is fed to a phase detector. The phase shift is generated by
an external LC combination connected to DEMO1 (pin 10)
and DEMO2 (pin 11). The baseband signal is coupled out
single ended via an output buffer and is fed to the FSK
input of the ASK/FSK switch.
Frequency multiplier
The frequency multiplier is an emitter-coupled transistor
pair driving an off-chip balanced tuned circuit. The bias
current of this emitter coupled pair is set by an off-chip
resistor (R50) to a typical value of 350 µA at 433.92 MHz
(R50 = 1.2 kΩ). The oscillator output signal is AC-coupled
to one of the inputs of the emitter-coupled pair. The other
input is connected to ground via an on-chip capacitor.
The output voltage of the frequency multiplier drives the
switching stage of the mixer. The bias voltage at this point
is set by an off-chip resistor (R51) to allow sufficient
voltage swing at the mixer outputs.
ASK/FSK switch
The selection of either ASK or FSK reception will be done
by the DEMO1 (pin 10). Grounding this pin to 0 V will
switch the IC to ASK mode. Additional the FM demodulator
and parts of the data slicer will be switched off. In FSK
mode DEMO1 (pin 10) is connected to DEMO2 (pin 11)
via a LC combination (see Fig.9).
Data filters
After demodulation a two-stage data filtering circuit is
provided in order to suppress unwanted frequency
components. Two RC low-pass filters with on-chip
resistors are provided which are separated by a buffer
stage.
Post mixer amplifier
The Post Mixer Amplifier (PMA) is a differential input,
single-ended output amplifier. Amplifier gain is provided in
order to reduce the influence of the limiter noise figure on
the total noise figure.
1999 Jan 22
5
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Data slicer
RSSI buffer
Data detection is provided by means of a level comparator
with adaptive slice reference. After the first data filter stage
the pre-filtered data is split into two paths. One passes the
second data filter stage and is fed to the positive
comparator input. The other path is fed to an integration
circuit with a large time constant in order to derive the
average value (DC component) as an adaptive slice
reference which is presented to the negative comparator
input. The internal buffer provides 13 dB AC voltage gain.
The adaptive reference allows to detect the received data
over a large range of noise floor levels. The integration
circuit consists of a simple RC low-pass filter with on-chip
resistors. The data slicer output is designed with internal
pull-up.
The RSSI buffer is an amplifier with a voltage gain of 0 dB.
At FSK receive mode the RSSI output provides a field
strength indication. It has an output impedance of 10 kΩ.
Figure 3 shows the level curve (RSSI curve) as a function
of the limiter input voltage (RMS value).
MGM744
1.55
V
RSSI
(V)
1.45
(1)
(2)
(3)
1.35
1.25
1.15
-7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
(V)
V
LIN(rms)
(1) Tamb = 85 °C.
(2) Tamb = 27 °C.
(3) Tamb = −40 °C.
Fig.3 Level curve VRSSI as a function of VLIN(rms)
.
1999 Jan 22
6
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−0.3
MAX.
+8.0
UNIT
VCC
supply voltage
V
Pi(max)
Tamb
Tstg
absolute maximum input power
operating ambient temperature
storage temperature
electrostatic handling
pins 3 and 6
−
3
dBm
°C
−40
−55
+85
+125
°C
Ves
note 1
−50
+50
V
V
V
V
V
pin 2
−100
−250
−200
−250
+100
+150
+250
+250
pin 5
pin 23
all other pins
Note
1. Machine model: C = 200 pF, R = 0 Ω and L = 0.75 µH; pins are connected to GND and VCC
.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air
125
K/W
1999 Jan 22
7
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
DC CHARACTERISTICS
VCC = 2.7 V; Tamb = 25 °C; for application diagram see Figs 9 and 10; crystal disconnected; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VCC
ICC
supply voltage
2.7
−
5.5
V
supply current
operating mode on;
VPWD = 0 V; notes 1 and 2
FSK demodulation;
note 3
2.8
2.5
−
4.3
3.7
3
5.8
4.9
30
mA
mA
µA
mV
V
ASK demodulation;
note 4
operating mode off;
PWD = VCC
V
VPWD
voltage on pin PWD
current into pin PWD
operating mode on
(receiving mode)
0
−
300
VCC
−3
operating mode off
(sleep mode)
VCC − 0.3 −
IPWD
operating mode on
(receiving mode);
VPWD = 0 V
−30
−10
µA
operating mode off
(sleep mode);
−
2
15
µA
VPWD = VCC
Oscillator
VOSE
DC voltage at pin 2
DC voltage at pin 3
independent of oscillator
independent of oscillator
0.33
1.05
0.38
1.15
0.43
1.25
V
V
VOSB
Multiplier
VTEM
DC voltage at pin 6
independent of oscillator
independent of oscillator
0.33
2.01
0.39
2.21
0.45
2.41
V
V
VTN,TP
DC voltage at pins 7 and 8
Mixer
VMIXIN
DC voltage at pin 23
independent of oscillator
independent of oscillator
0.68
1.10
0.78
1.25
0.88
1.40
V
V
Post mixer amplifier
VFA
DC voltage at pin 22
Limiter
VLIN
DC voltage at pin 20
DC voltage at pin 19
DC voltage at pin 18
independent of oscillator
independent of oscillator
independent of oscillator
1.85
1.85
1.00
1.95
1.95
1.16
2.05
2.05
1.32
V
V
V
VLFB
VRSSI
1999 Jan 22
8
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Demodulator
VDEMO1,2
DC voltage at pins 10 and 11
independent of oscillator; 2.00
note 5
2.24
2.48
300
V
VDEMO1(ASK) DC voltage at pin 10 to switch in
ASK mode
0
−
mV
Data filter and slicer
VCPA,CPB,CPC DC voltage at pins 15, 16 and 17
ASK mode
1.27
1.81
1.42
2.01
1.57
2.21
VCC
0.6
V
V
V
V
FSK mode; note 6
VOH(DATA)
VOL(DATA)
HIGH-level output voltage at pin 14 IDATA = −10 µA
LOW-level output voltage at pin 14 IDATA = 200 µA
VCC − 0.5 −
0
−
Notes
1. For fi(RF) = 868.35 MHz all values + 0.6 mA.
2. Crystal connected; oscillator and multiplier active.
3. Pin DEMO1 connected to pin DEMO2 via tank circuit.
4. Pin DEMO1 short circuited to ground.
5. The given values are applicable for FSK reception mode. In ASK mode pin 10 is short circuited to ground.
6. No modulation and fIF = 10.7 MHz.
1999 Jan 22
9
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
AC CHARACTERISTICS
VCC = 2.7 V; Tamb = 25 °C; for application diagram see Figs 9 and 10; fi(RF) = 433.92 MHz (see Table 4) and
fi(RF) = 868.35 MHz (see Table 5); fmod = 1 kHz square wave; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
System performance
fi(RF)
fIF
RF input frequency
IF frequency
250
−
920
MHz
10.56
−
10.7
−
10.84
3
MHz
dBm
dBm
Pi(max)
maximum input power
ASK mode; BER ≤ 3%;
−22
−16
−10
notes 1 and 2
FSK mode; BER ≤ 3%;
−6
0
+1
dBm
notes 2 and 3
PSPUR
fDATA
spurious radiation
data frequency
note 4
−
−
−
−57
dBm
kHz
note 5
1
−
ton(RX)
receiver turn-on time
notes 6 and 7
fi(RF) = 433.92 MHz
−
6
3
−
10
7
ms
ms
V
fi(RF) = 868.35 MHz
−
VRSSI
RSSI voltage
1.1
1.6
ASK mode
Φi(ASK)
input sensitivity directly into pin MIXIN BER ≤ 3%; notes 1 and 2
f
i(RF) = 433.92 MHz
i(RF) = 868.35 MHz
−
−
−119
−116
−113
−110
dBm
dBm
f
FSK mode
Φi(FSK)
∆f
input sensitivity directly into pin MIXIN BER ≤ 3%; notes 2 and 3 −
−103
10
−100
75
dBm
kHz
dB
frequency deviation (peak value)
4
∆Φ(FSK)(max) maximum sensitivity degradation
Gdem demodulator gain
∆f = 4 kHz
−
−
3
note 8
0.75
1.0
1.25
mV
---------
kHz
Mixer and post mixer amplifier
Zi
input impedance of mixer
fi(RF) = 433.92 MHz
fi(RF) = 868.35 MHz
−
600
300
−30
42
−
Ω
−
−
Ω
IP3PMA
GPMA
Zo(IF)
interception point (mixer + PMA)
gain (mixer + PMA)
−38
40
280
−
dBm
dB
Ω
note 9
50
380
output impedance of IF amplifier
330
1999 Jan 22
10
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Limiter
Ri(LIN)
limiter input resistance
40
48
56
kΩ
Buffer
RCPC
data buffer output resistance at pin 17
data buffer AC gain
24
30
36
kΩ
dB
kΩ
Gbuffer
12
13
14
RCPA,CPB
data buffer output resistance at
pins 15 and 16
120
150
180
Data slicer; see Chapter “DC characteristics”
Bds
internal data slicer bandwidth
50
−
100
kHz
Notes
1. 100% AM modulation (ASK); available power from generator into a 50 Ω load.
2. With external matching network, to transform the impedance to 50 Ω.
3. ∆f = 10 kHz; available power from generator into a 50 Ω load.
4. Measured at the RF input connector of the test board into a 50 Ω load; fi(RF) = 25 MHz to 1 GHz.
5. The data frequency range can be varied by changing C30 to C32 (see Figs 9 and 10) to match other bit rates.
Data frequency determined by data slicer application.
6. ton = 50 ms; toff = 138 ms; P = Psens + 3 dB.
7. The given turn-on time is only valid during strobing by pin PWD; if the IC is strobed on and off by the supply voltage
the turn-on time will be longer.
8. LC tank circuit (L60, C60) tuned to maximum phase slope.
9. GPMA is typically 6 dB lower when measured in the application, because of the load of the ceramic filter.
1999 Jan 22
11
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
INTERNAL CIRCUITRY
Table 1 Equivalent pin circuits and pin voltages for rough test of printed-circuit board; VCC = 2.7 V; no input signal
PIN
NO.
PIN
SYMBOL
DC VOLTAGE
(V)
EQUIVALENT CIRCUIT
1
2
3
5
OGND
0
5
OSE
OSB
OSC
0.38
1.15
2.7
V
CC
3
2
8.15 kΩ
1
GND
MHA780
4
6
7
8
VCC
TEM
TN
2.7
0.39
2.21
2.21
7
8
GND
TP
9.6 kΩ
V
5
CC
6
MHA781
9
PWD
−
V
CC
210 kΩ
9
MGM750
10
11
12
DEMO1
DEMO2
GND
2.24
2.24
0
7 kΩ
10
11
10 kΩ
7 kΩ
12
MGM751
1999 Jan 22
12
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
PIN
NO.
PIN
SYMBOL
DC VOLTAGE
(V)
EQUIVALENT CIRCUIT
13
15
16
CGND
0
V
CC
CPA
CPB
1.95
1.95
15
150 kΩ
150 kΩ
16
13
MGM753
14
DATA
−
V
CC
1 kΩ
14
13
MGM754
17
CPC
1.95
V
CC
30 kΩ
17
GND
MGM755
18
RSSI
1.16
10 kΩ
18
12
MGM752
1999 Jan 22
13
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
PIN
NO.
PIN
SYMBOL
DC VOLTAGE
(V)
EQUIVALENT CIRCUIT
19
LFB
1.95
V
CC
19
GND
MGM756
20
LIN
1.95
V
CC
48 kΩ
20
GND
MGM757
21
22
VCCI
FA
2.7
21
1.25
330 Ω
22
GND
MGM758
23
24
MIXIN
MGND
0.78
0
23
15 Ω
24
MGM759
1999 Jan 22
14
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
TEST INFORMATION
Tuning procedures
TUNING PROCEDURE FOR AC TESTS
1. Turn on the signal generator (fi(RF) = 433.92 or 868.35 MHz; no modulation; RF input level = −50 dBm).
2. Tune first C50 (multiplier tank circuit), second C11 (RF stage input) to obtain a peak IF voltage at pin FA.
TUNING PROCEDURE FOR ASK RECEPTION
1. Make sure that pin DEMO1 is short circuited to ground.
2. Turn on ASK modulation and check that data is appearing on the DATA output pin and proceed with the AC tests.
TUNING PROCEDURE FOR FSK RECEPTION
1. Make sure that pins DEMO1 and DEMO2 are connected by the LC tank circuit.
2. Turn on FSK modulation (∆f = 10 kHz; RF input level = −103 dBm).
3. Tune C61 (or L60) (phase shifter LC tank circuit) to obtain a peak LF voltage at pin CPC.
4. Check that data is appearing on pin DATA and proceed with the AC tests.
AC test conditions
Table 2 Test signals
The reference signal level Pref for the following tests is defined as the minimum input level in dBm to give a
BER ≤ 3 × 10−2 (e.g. 60 bit errors per second for 2000 bits/s). All test signal levels refer to 50 Ω load condition.
TEST
SIGNAL
FREQUENCY
(MHz)
MODULATION FREQUENCY
DATA SIGNAL
MODULATION
INDEX
DEVIATION
1
2
3
4
433.92/868.35 1000 Hz square wave
433.92/868.35 1000 Hz square wave
AM (ASK)
FM (FSK)
100%
−
−
−
−
10 kHz
433.92/868.35
433.82/868.35
−
−
no modulation
no modulation
−
−
1999 Jan 22
15
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Table 3 Tests and results
P1 is the maximum available power from signal generator 1 at the input of the test board; P2 is the maximum available
power from signal generator 2 at the input of the test board.
GENERATOR
TEST
RESULT
1
2
ASK sensitivity into
modulated test signal 1;
−
BER ≤ 3 × 10−2
pin MIXIN (see Fig.5) P1 ≤ −113 dBm for
fi(RF) = 433.92 MHz;
(e.g. 60 bit errors per second for 2000 bits/s)
P1 ≤ −110 dBm for
fi(RF) = 868.35 MHz
FSK sensitivity into
pin MIXIN (see Fig.5) P1 ≤ −100 dBm
modulated test signal 2;
−
−
−
−
BER ≤ 3 × 10−2
(e.g. 60 bit errors per second for 2000 bits/s)
BER ≤ 3 × 10−2
(e.g. 60 bit errors per second for 2000 bits/s)
BER ≤ 3 × 10−2
(e.g. 60 bit errors per second for 2000 bits/s)
Maximum input power modulated test signal 1;
for ASK (see Fig.5)
P1 ≥ −22 dBm
Maximum input power modulated test signal 2;
for FSK (see Fig.5)
Receiver turn-on
time; see note 1 and signal 1 or 2;
Fig.4
P1 ≥ −6 dBm
modulated test
check that the first 10 bits are correct;
error counting is started 10 ms after power down
is switched into operating mode on
P1 = Pref + 3 dB
Interception point
(mixer + PMA)
see note 2 and Fig.6
test signal 3;
P1 = −40 dBm
test signal 4;
P2 = P1
measure with high impedance probe at pin FA
IM3
IP3PMA = P +
dBm (for IM3 see Fig.6)
---------
1
2
Spurious radiation;
see note 3 and Fig.7
−
−
no spurious signals (25 MHz to 1 GHz) with level
higher than maximum PSPUR
Notes
1. The voltage at pin PWD of the test circuit alternates between operating mode: on (50 ms; 0 V) and off (138 ms; VCC);
see Fig.4.
2. Probe of spectrum analyzer connected to pin FA (pin 22).
3. Spectrum analyzer connected to the input of the test board.
V
PWD
(V)
2.7
0
0
50
188
238
376
426
t (ms)
MGM745
Fig.4 Timing diagram for pulsed power down voltage.
16
1999 Jan 22
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
GENERATOR 1
BER TEST
FACILITY
(1)
50 Ω
TEST CIRCUIT
(2)
MED900
(1) For test circuit see Fig.9.
(2) For BER test facility see Fig.8.
Fig.5 Test configuration A (single generator).
GENERATOR 1
50 Ω
SPECTRUM
ANALYZER
WITH
50 Ω
2-SIGNAL
POWER
(1)
TEST CIRCUIT
PROBE
COMBINER
GENERATOR 2
50 Ω
IM3
∆f
∆f
∆f = 100 kHz
∆f
MED901
(1) For test circuit see Fig.9.
Fig.6 Test configuration C (IP3).
17
1999 Jan 22
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
SPECTRUM
ANALYZER
INPUT IMPEDANCE
50 Ω
(1)
TEST CIRCUIT
MED902
(1) For test circuit see Fig.9.
Fig.7 Test configuration D (spurious radiation).
TX data
SIGNAL
GENERATOR
MASTER
CLOCK
BIT PATTERN
GENERATOR
PRESET
DELAY
delayed
TX data
DEVICE
UNDER TEST
INTEGRATE
AND DUMP
DATA
COMPARATOR
to error counter
RX data
BER TEST BOARD
MED904
Fig.8 BER test facility.
1999 Jan 22
18
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a
V
RF
CC
C10
L10
50 Ω input
X20
RSSI
data output
C22
C11
R20
C20
C21
C33
C30
C32
C31
C12
V
DATA
14
CGND
13
MGND MIXIN FA
CCI LIN
21 20
LFB
19
RSSI
18
CPC
17
CPB
16
CPA
15
24
23
22
LIMITER
AMPLIFIER
AM/FM
SWITCH
DEMODULATOR
MIXER
PMA
UAA3220TS
+
DATA SLICER
−
MULTIPLIER
BIAS
OSCILLATOR
×3
×2/×3
1
2
3
4
5
6
7
8
9
10
11
12
MGM747
TEM TN
C50
TP
PWD
DEMO1 DEMO2
C60
GND
OGND OSE
OSB
V
OSC
CC
C42
C61
R41
C43 L41
L40
R40
R50
L50
L51
X40
C41
R60
L60
R51
power-down
C40
C70
C44
C51
V
CC
Fig.9 Application diagram (FSK reception).
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a
V
RF
CC
C10
L10
50 Ω input
X20
RSSI
data output
C22
C11
R20
C20
C21
C33
C30
C32
C31
C12
V
DATA
14
CGND
13
MGND MIXIN FA
CCI LIN
21 20
LFB
19
RSSI
18
CPC
17
CPB
16
CPA
15
24
23
22
LIMITER
AMPLIFIER
AM/FM
SWITCH
DEMODULATOR
MIXER
PMA
UAA3220TS
+
DATA SLICER
−
MULTIPLIER
BIAS
OSCILLATOR
×3
×2/×3
1
2
3
4
5
6
7
8
9
10
11
12
TEM TN
C50
TP
PWD
DEMO1 DEMO2
GND
MGM748
OGND OSE
OSB
V
OSC
CC
C42
R41
C70
C43 L41
L40
R40
R50
L50
L51
X40
C41
R51
power-down
C40
C44
C51
V
CC
Fig.10 Application diagram (ASK reception).
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Table 4 Component list for Figs 9 and 10; fi(RF) = 433.92 MHz
COMPONENT CHARACTERISTICS
TEMPERATURE
VALUE TOLERANCE COEFFICIENT
(ppm/K)
SELF
RESONANCE
FREQUENCY
COMPONENT
LOSS FACTOR
AT 1 MHz
QUALITY
FACTOR
R20
330 Ω
1.8 kΩ
±2%
±2%
+50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
R40
+50
−
R41
not placed −
−
−
R50
1.2 kΩ
1.5 kΩ
4.7 kΩ
2.7 pF
3 to 10 pF
100 pF
1 nF
±2%
+50
−
R51
±2%
+50
−
R60
C10(1)
±2%
+50
−
±10%
−
0 ±30
tan δ ≤ 20 × 10−4
tan δ ≤ 20 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 20 × 10−4
tan δ ≤ 20 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 20 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 20 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
−
C11
0 ±300
0 ±30
C12
±10%
±10%
±10%
±10%
±10%
±10%
±10%
±10%
±10%
±10%
±10%
±10%
±10%
−
C20
0 ±30
C21
47 nF
0 ±30
C22
1 nF
0 ±30
C30
2.7 nF
470 pF
47 nF
0 ±30
C31
0 ±30
C32
0 ±30
C33
10 nF
0 ±30
C40
C41(1)
1 nF
0 ±30
15 pF
0 ±30
C42
15 pF
0 ±30
C43(1)
C44
8.2 pF
1 nF
0 ±30
0 ±30
C50
3 to 10 pF
1 nF
0 ±300
0 ±30
C51
±10%
±10%
−
C60(2)
C61(2)
C70
82 pF
0 ±30
5 to 30 pF
0 ±300
−
not placed −
L10(3)
8 nH
±5%
+25 to +125
+25 to +125
+25 to +125
+25 to +125
+25 to +125
+25 to +125
−
≥140 at 150 MHz ≥3 GHz
L40
560 nH
100 nH
8 nH
±10%
±10%
±5%
−
≥45 at 100 MHz
≥60 at 350 MHz
≥400 MHz
≥1 GHz
L41
−
L50(3)
L51(3)
L60(2)
X20
−
≥140 at 150 MHz ≥3 GHz
≥140 at 150 MHz ≥3 GHz
8 nH
±5%
−
2.2 µH
±10%
−
≥37 at 7.9 MHz
≥150 MHz
ceramic filter, Murata SFE 10.7 MA 5 A; see note 4
3rd overtone crystal, 70.5367 MHz; see note 5
X40
1999 Jan 22
21
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Notes
1. C10, C41 and C43 can be placed as tuning capacitors on the PCB.
2. C60, C61 and L60 can be substituted by an LC tank.
3. L10, L50 and L51 are 3 turn air coils.
4. 3 dB bandwidth: 280 ± 50 kHz; insertion loss: 4 dB typical and 6 dB maximum; spurious: 30 dB minimum at
8 to 12 MHz; input and output impedance: 330 Ω.
5. Motional resistance: Rm ≤ 20 Ω; static capacitance: C0 ≤ 6 pF; load capacitance: CL = 6 pF; loaded parallel
resonance frequency: 70.5367 MHz; drive level dependency: Rm ≤ 20 Ω (1 nW ≤ P ≤ 1 mW).
1999 Jan 22
22
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Table 5 Component list for Figs 9 and 10; fi(RF) = 868.35 MHz
COMPONENT CHARACTERISTICS
TEMPERATURE
TOLERANCE COEFFICIENT
(ppm/K)
SELF
RESONANCE
FREQUENCY
COMPONENT
LOSS FACTOR
AT 1 MHz
QUALITY
FACTOR
VALUE
330 Ω
R20
R40
R41
R50
R51
R60
C10
C11
±5%
±5%
−
≤±100
≤±100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.5 kΩ
not placed
390 Ω
330 Ω
4.7 kΩ
27 pF
1.7 to 3 pF
27 pF
1 nF
−
−
±5%
±5%
±5%
±5%
−
≤±100
≤±100
≤±100
0 ±30
−
−
−
tan δ ≤ 10 × 10−4
tan δ ≤ 20 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 2.5%
tan δ ≤ 2.5%
tan δ ≤ 2.5%
tan δ ≤ 2.5%
tan δ ≤ 2.5%
tan δ ≤ 2.5%
tan δ ≤ 2.5%
tan δ ≤ 2.5%
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 15 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 20 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 10 × 10−4
tan δ ≤ 3.4 × 10−4
tan δ ≤ 0.06
−
0 ±300
0 ±30
C12
C20
C21
C22
C30
C31
C32
C33
C40
C41
C42
C43
C44
C50
C51
C60(2)
C61(2)
C70
L10(3)
L40
±5%
±10%
±10%
±10%
±10%
±10%
±10%
±10%
±10%
±5%
±5%
±0.25 pF
±5%
−
±15%(1)
±15%(1)
±15%(1)
±15%(1)
±15%(1)
±15%(1)
±15%(1)
±15%(1)
0 ±30
47 nF
1 nF
3.3 nF
680 pF
10 nF
10 nF
1 nF
12 pF
12 pF
4 pF
0 ±30
0 ±30
47 pF
2.5 to 6 pF
47 pF
82 pF
5 to 30 pF
4.7 µF
−
0 ±30
0 ±300
0 ±30
±5%
±5%
−
0 ±30
0 ±300
±15%(1)
−
±20%
−
560 nH
39 nH
−
±10%
±10%
−
+25 to +125
+25 to +125
−
−
≥30 at 25 MHz
≥415 MHz
L41
−
≥50 at 50 MHz
≥1.5 GHz
L50(3)
L51(3)
L60(2)
X20
−
−
−
−
−
−
−
−
−
2.2 µH
±10%
+25 to +125
−
≥20 at 7.9 MHz
≥140 MHz
ceramic filter, Murata SFE 107 MA 5 A; see note 4
3rd overtone crystal, 95.2944 MHz; see note 5
X40
1999 Jan 22
23
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Notes
1. Temperature coefficient given as maximum ∆C/C over temperature range.
2. C60, C61 and L60 can be substituted by an LC tank.
3. Realized as microstrip line; see Fig.12.
4. 3 dB bandwidth: 280 ± 50 kHz; insertion loss: 4 dB typical and 6 dB maximum; spurious: 30 dB minimum at
8 to 12 MHz; input and output impedance: 330 Ω.
5. Motional resistance: Rm ≤ 20 Ω; static capacitance: C0 ≤ 6 pF; load capacitance: CL = 6 pF; loaded parallel
resonance frequency: 95.2944 MHz; drive level dependency: Rm ≤ 20 Ω (1 nW ≤ P ≤ 1 mW).
1999 Jan 22
24
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
47
44
top view
bottom view
V
CC
RSSI
DATA out
C51
L60
L51
L50
C61
C50
R51
L41
R60
C60
C43
R50
X10
C21
L10
R41
C44
C42
L40
C70
UAA3220TS
C12
C41
X40
C10
C40
R40
C11
MGM749
RF in
Dimensions in mm.
Fig.11 Printed-circuit board layout for fi(RF) = 433.92 MHz.
25
1999 Jan 22
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
47
46
bottom view
jumper
DATA out
RSSI
L60
C61
C50
CON9
C60
R60
n.p.
C70
UAA3220TS
C20
C51
R51
X20
C12
C10
L41
C44
C11
C42
L40
RF in
X40
MHB459
Dimensions in mm.
Fig.12 Printed-circuit board layout for fi(RF) = 868.35 MHz.
26
1999 Jan 22
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
PACKAGE OUTLINE
SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm
SOT340-1
D
E
A
X
c
H
v
M
A
y
E
Z
24
13
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
12
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
8o
0o
0.21
0.05
1.80
1.65
0.38
0.25
0.20
0.09
8.4
8.0
5.4
5.2
7.9
7.6
1.03
0.63
0.9
0.7
0.8
0.4
mm
2.0
0.25
0.65
1.25
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
93-09-08
95-02-04
SOT340-1
MO-150AG
1999 Jan 22
27
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
If wave soldering is used the following conditions must be
observed for optimal results:
SOLDERING
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
1999 Jan 22
28
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
REFLOW(1)
BGA, SQFP
not suitable
suitable
suitable
suitable
suitable
suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2)
PLCC(3), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
not recommended(3)(4)
not recommended(5)
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jan 22
29
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
NOTES
1999 Jan 22
30
Philips Semiconductors
Product specification
Frequency Shift Keying (FSK)/Amplitude
Shift Keying (ASK) receiver
UAA3220TS
NOTES
1999 Jan 22
31
Philips Semiconductors – a worldwide company
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Slovenia: see Italy
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Spain: Balmes 22, 08007 BARCELONA,
Tel. +30 1 489 4339/4239, Fax. +30 1 481 4240
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/00/02/pp32
Date of release: 1999 Jan 22
Document order number: 9397 750 04896
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