FGH40T65UPD [FAIRCHILD]
650 V, 40 A Field Stop Trench IGBT; 650 V， 40 A场截止沟道IGBT
| 型号： | FGH40T65UPD |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 650 V, 40 A Field Stop Trench IGBT |
| 文件： | 总10页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
FGH40T65UPD
650 V, 40 A Field Stop Trench IGBT
Features
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ = 175oC
Positive Temperaure Co-efficient for easy Parallel Operating
High Current Capability
General Description
Using innovative field stop trench IGBT technology, Fairchild®’s
new series of field stop trench IGBTs offer optimum perfor-
mance for solar inverter, UPS, welder, and digital power genera-
tor where low conduction and switching losses are essential.
Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 40 A
100% of Parts Tested ILM(2)
High Input Impedance
Tightened Parameter Distribution
Applications
RoHS Compliant
Short-circuit Ruggedness > 5us @25oC
•
Solar Inverter, UPS, Welder, Digital Power Generator
•
Telecom, ESS
E
C
G
C
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
650
V
V
20
Collector Current
@ TC = 25oC
@ TC = 100oC
80
A
IC
Collector Current
40
A
ICM (1)
ILM (2)
IF
Pulsed Collector Current
Clamped Inductive Load Current
Diode Forward Current
120
A
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
120
A
40
A
Diode Forward Current
20
120
A
IFM(1)
PD
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
A
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
268
W
W
us
oC
oC
134
SCWT
TJ
5
-55 to +175
-55 to +175
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2: Ic = 120A, Vce = 400V, Rg = 15Ω
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.56
1.71
40
Unit
oC/W
oC/W
oC/W
-
-
-
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Eco Status Packing Type Qty per Tube
FGH40T65UPD
FGH40T65UPD
TO-247
-
-
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA
Temperature Coefficient of Breakdown
650
-
-
-
-
V
ΔBVCES
ΔTJ
V/oC
V
GE = 0V, IC = 250uA
0.6
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
-
-
250
μA
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 40mA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
4.0
-
6.0
7.5
2.3
V
V
1.65
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.1
-
V
T
C = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
2730
82
3630
110
72
pF
pF
pF
V
CE = 30V VGE = 0V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
48
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
20
26
26
ns
ns
Rise Time
34
Turn-Off Delay Time
Fall Time
144
17
187
ns
VCC = 400V, IC = 40A,
R
G = 7Ω, VGE = 15V,
22
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
1.59
0.58
2.17
19
2.1
mJ
mJ
mJ
ns
0.76
2.86
-
-
-
-
-
-
-
-
38
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
153
60
ns
VCC = 400V, IC = 40A,
G = 7Ω, VGE = 15V,
R
ns
Inductive Load, TC = 175oC
Eon
Eoff
Ets
TSC
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
1.84
0.98
2.82
-
mJ
mJ
mJ
us
VGE = 15V, VCC =400V,
R
G = 10Ω
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT (Continued)
Symbol
Qg
Parameter
Test Conditions
Min.
Typ.
177
23
Max
265
35
Unit
nC
Total Gate Charge
-
-
-
V
V
CE = 400V, IC = 40A,
GE = 15V
Qge
Gate to Emitter Charge
Gate to Collector Charge
nC
Qgc
100
150
nC
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
2.1
1.9
96
Max
Unit
T
C = 25oC
-
-
-
-
-
-
-
2.7
-
VFM
Diode Forward Voltage
IF = 20A
V
TC = 175oC
Erec
trr
Reverse Recovery Energy
T
T
T
T
C = 175oC
C = 25oC
C = 175oC
C = 25oC
-
uJ
ns
33
43
-
Diode Reverse Recovery Time
IF = 20A, dIF/dt = 200A/μs
128
53
74
-
Qrr
Diode Reverse Recovery Charge
nC
TC = 175oC
341
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
TC = 175oC
20V
TC = 25oC
20V
15V
15V
100
100
12V
12V
80
60
80
60
10V
10V
40
40
VGE = 8V
20
20
VGE = 8V
0
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
120
120
100
80
Common Emitter
VCE = 20V
TC = 25oC
100
TC = 175oC
80
60
40
20
0
60
40
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
20
0
3
6
9
12
15
0
2
4
6
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
16
12
8
80A
40A
40A
80A
4
IC = 20A
IC = 20A
0
25
50
75
100
125
150
175
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
16
12
8
16
12
8
40A
40A
80A
80A
4
4
IC = 20A
IC = 20A
8
0
0
4
8
12
16
20
4
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
10000
Common Emitter
TC = 25oC
200V
12
300V
Cies
VCC = 400V
9
1000
6
3
0
Coes
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
100
30
Cres
0
30
60
90
120
150
180
1
10
Collector-Emitter Voltage, VCE [V]
30
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
1000
100
tr
100
10μs
100μs
1ms
10 ms
10
td(on)
DC
1
Common Emitter
VCC = 400V, VGE = 15V
*Notes:
1. TC = 25oC
2. TJ = 175oC
IC = 40A
TC = 25oC
TC = 175oC
10
0.1
3. Single Pulse
0.01
5
0.1
1
10
100
1000
0
10
20
30
40
50
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [Ω]
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
1000
td(off)
100
100
tr
td(on)
tf
Common Emitter
10
10
Common Emitter
RG = 7Ω, VGE = 15V, Vcc = 400V
TC = 25oC
TC = 175oC
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
1
20
1
0
10
20
30
40
50
30
40
50
60
70
80
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
1000
10000
td(off)
Eon
100
1000
Eoff
Common Emitter
VCC = 400V, VGE = 15V
tf
Common Emitter
VGE = 15V, RG = 7Ω
10
1
IC = 40A
Vcc = 400V
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
100
20
30
40
50
60
70
80
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
Figure 18. Turn off Switching
SOA Characteristics
10000
200
100
Eon
1000
10
Eoff
Common Emitter
VGE = 15V, RG = 7Ω
TC = 25oC
TC = 175oC
Safe Operating Area
VGE = 15V, TC = 175oC
1
100
20
30
40
50
60
70
80
1
10
100
1000
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Load Current Vs. Frequence
90
160
VCC = 400V
load Current : peak of square wave
120
60
30
0
TC = 100oC
80
40
Duty cycle : 50%
TC = 100oC
Powe Dissipation = 134 W
0
0
25
50
75 100 125 150 175 200
1k
10k
100k
1M
Case temperature, TC [oC]
Switching Frequency, f [Hz]
Figure 21. Forward Characteristics
Figure 22. Reverse Recovery Current
6
200
TC = 25oC
100 TC = 75oC
200A/μs
TC = 175oC
4
TC = 175oC
200A/μs
diF/dt = 100A/μs
10
TC = 75oC
2
diF/dt = 100A/μs
TC = 25oC
TC = 175oC
TC = 25oC
0
1
0
9
18
IC [A]
27
36
45
0
1
2
3
4
5
Forward Voltage, VF [V]
Figure 23. Stored Charge
Figure 24. Reverse Recovery Time
400
150
100
50
200A/μs
200A/μs
diF/dt =100A/μs
300
diF/dt = 100A/μs
TC = 25oC
TC = 175oC
200A/μs
200
TC = 25oC
100 TC = 175oC
200A/μs
diF/dt =100A/μs
diF/dt = 100A/μs
25 30
Forwad Current, IF [A]
0
0
5
10
15
20
35
40
5
10
15
20
25
30
35
40
Forward Current, IF [A]
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
7
www.fairchildsemi.com
Typical Performance Characteristics
Figure 25. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
0.01
1E-3
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 26.Transient Thermal Impedance of Diode
3
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
8
www.fairchildsemi.com
Mechanical Dimensions
TO - 247A03
©2012 Fairchild Semiconductor Corporation
9
www.fairchildsemi.com
FGH40T65UPD Rev. C0
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
10
www.fairchildsemi.com
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