FGH40T65SH-F155 [ONSEMI]
650 V、40 A 场截止沟道 IGBT;
| 型号： | FGH40T65SH-F155 |
| 厂家： | 
ONSEMI |
| 描述： | 650 V、40 A 场截止沟道 IGBT 双极性晶体管 |
| 文件： | 总8页 (文件大小：476K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 40 A
FGH40T65SH
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
rd
series of field stop 3 generation IGBTs offer the optimum
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performance for solar inverter, UPS, welder, telecom, ESS and PFC
applica−tions where low conduction and switching losses are
essential.
C
Features
• Maximum Junction Temperature: T = 175°C
J
G
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
E
E
• Low Saturation Voltage: V
= 1.6 V(Typ.) @ I = 40 A
C
• 100% of the Parts Tested for I (Note 1)
CE(sat)
LM
C
• High Input Impedance
• Fast Switching
G
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
TO−247−3LD
CASE 340CH
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
MARKING DIAGRAM
$Y&Z&3&K
FGH40T65
SH
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40T65SH
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2020 − Rev. 3
FGH40T65SH/D
FGH40T65SH
ABSOLUTE MAXIMUM RATINGS (T = 25°C Unless Otherwise Noted)
C
Description
Collector to Emitter Voltage
Symbol
FGH40T65SH
Unit
V
V
CES
V
GES
650
Gate to Emitter Voltage
20
30
V
Transient Gate to Emitter Voltage
V
Collector Current
T
T
T
= 25°C
= 100°C
= 25°C
I
80
A
C
C
C
C
Collector Current
40
A
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
I
120
A
LM
I
120
A
CM
T
T
= 25°C
P
268
W
W
°C
°C
°C
C
D
= 100°C
134
C
T
−55 to +175
−55 to +175
300
J
T
stg
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 120 A, R = 41,6 ꢀ, Inductive Load
CC
GE
C
G
2. Repetitive Rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Symbol
FGH40T65SH
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
R
R
0.56
40
ꢁ
JC
JA
ꢁ
PACKAGE MARKING AND ORDERING INFORMATION
Top Mark
Part Number
Package
Reel Size
Tape Width
Quantity
FGH40T65SH
FGH40T65SH−F155
TO−247−3LD
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
GE
= 0 V, I = 1 mA
650
−
−
V
CES
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/
ꢂ
T
I = 1 mA, Reference to 25°C
C
0.6
V/°C
CES
J
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢃ
A
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICS
G−E Threshold Voltage
V
I
C
I
C
I
C
= 40 mA, V = V
GE
4.0
−
5.5
1.6
7.5
2.1
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V
GE
CE(sat)
= 40 A, V = 15 V, T = 175°C
−
2.14
GE
C
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2
FGH40T65SH
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
1995
70
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
23
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
19.2
34.4
65.6
9.6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
ns
ns
ꢃ J
ꢃ J
ꢃ J
ns
ns
ns
ns
ꢃ J
ꢃ J
ꢃ J
nC
nC
nC
d(on)
CC
G
C
R
= 6 ꢀ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1010
297
E
ts
1307
18.4
32.8
71.2
14.4
1390
541
t
t
V
= 400 V, I = 40 A,
= 6 ꢀ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
d(off)
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
E
ts
1931
72.2
13.5
28.5
Q
V
CC
V
GE
= 400 V, I = 40 A,
g
C
= 15 V
Q
ge
gc
Q
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH40T65SH
TYPICAL PERFORMANCE CHARACTERISTICS
120
120
90
60
30
0
20 V
20 V
T
C
= 175°C
T
C
= 25°C
15 V
12 V
15 V
12 V
90
60
30
0
10 V
10 V
V
GE
= 8 V
V
GE
= 8 V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
3
120
Common Emitter
GE
Common Emitter
V
= 15 V
V
= 15 V
GE
T
T
= 25°C
C
C
80 A
= 175°C
90
60
30
0
2
40 A
I
C
= 20 A
1
−100
50
0
50
100
150
200
0
1
2
3
4
V
CE
, Collector−Emitter Voltage (V)
T , Case Temperature (°C)
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
C
Common Emitter
C
T
= 25°C
T
= 175°C
16
12
8
40 A
80 A
40 A
80 A
4
4
I
C
= 20 A
I
C
= 20 A
V
0
0
20
8
12
16
4
4
8
12
16
20
V
, Gate−Emitter Voltage (V)
, Gate−Emitter Voltage (V)
GE
GE
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs VGE
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4
FGH40T65SH
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
10000
1000
100
15
Common Emitter
C
T
= 25°C
C
12
9
ies
V
CC
= 200 V
300 V
400 V
C
oes
6
3
0
Common Emitter
= 0 V, f = 1 MHz
C
C
res
V
GE
T
= 25°C
10
0
20
40
60
80
1
10
, Collector−Emitter Voltage (V)
30
V
CE
Q , Gate Charge (nC)
g
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
100
1000
100
t
r
t
d(off)
t
f
t
d(on)
10
1
Common Emitter
Common Emitter
V
I
= 400 V, V = 15 V
10
5
V
= 400 V, V = 15 V
CC
GE
CC GE
= 40 A
I
T
T
= 40 A
C
C
T
C
T
C
= 25°C
= 25°C
C
C
= 175°C
= 175°C
50
0
10
20
30
40
0
50
10
20
30
40
R , Gate Resistance (ꢀ)
G
R , Gate Resistance (ꢀ)
G
Figure 10. Turn−Off Characteristics vs. Gate
Figure 9. Turn−On Characteristics vs. Gate
Resistance
Resistance
5000
100
t
r
E
E
on
1000
t
d(on)
off
Common Emitter
V
I
= 400 V, V = 15 V
Common Emitter
CC
GE
10
5
= 40 A
V
T
C
= 15 V, R = 6 ꢀ
C
GE
G
T
C
T
C
= 25°C
= 25°C
C
= 175°C
T
= 175°C
100
0
10
20
30
40
50
20
60
I , Collector Current (A)
80
40
C
R , Gate Resistance (ꢀ)
G
Figure 11. Switching Loss vs. Gate Resistance
Figure 12. Turn−On Characteristics
vs. Collector Current
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5
FGH40T65SH
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
500
100
10000
t
d(off)
E
on
1000
100
t
f
10
1
E
off
Common Emitter
Common Emitter
V
T
C
= 15 V, R = 6 ꢀ
V
T
T
= 15 V, R = 6 ꢀ
GE
G
GE
G
= 25°C
= 25°C
C
C
C
T
= 175°C
= 175°C
20
40
60
80
20
40
60
80
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 14. Switching Loss vs. Collector
Current
Figure 13. Turn−Off Characteristics
vs. Collector Current
250
200
150
100
50
300
Square Wave
T ≤ 175°C, D = 0.5, V = 400 V
J
GE
CE
100
10
V
= 15/0 V, R = 6 ꢀ
G
10 ꢃ s
T
C
= 25°C
100 ꢃ s
1 ms
T
C
= 75°C
10 ms
DC
1
T
C
= 100°C
*Notes:
1. T = 25°C
C
2. T = 175°C
J
3. Single Pulse
0.1
0
1k
10k
100k
1M
1
100
1000
10
V
CE
, Collector−Emitter Voltage (V)
f, Switching Frequency (Hz)
Figure 16. SOA Characteristics
Figure 15. Load Current vs. Frequency
0.6
0.5
0.2
0.1
0.1
0.05
0.02
P
DM
t
1
0.01
t
2
1
0.01
Duty Factor, D = t /t
Peak T = Pdm x Zꢁ jc + T
Single Pulse
2
j
C
0.005
0
−5
−4
−3
−2
−1
10
10
10
10
10
10
Rectangular Pulse Duration (sec)
Figure 17. Transient Thermal Impedance of IGBT
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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