FGH40T65SHDF-F155 [ONSEMI]
IGBT，650 V，40A，场截止沟槽;
| 型号： | FGH40T65SHDF-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650 V，40A，场截止沟槽 栅 双极性晶体管 |
| 文件： | 总9页 (文件大小：900K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGH40T65SHDF
650 V、 40 A 场截止沟槽 IGBT
特性
概述
•
•
•
•
•
•
•
•
•
最大结温：TJ =175°C
正温度系数，易于并联运行
高电流能力
飞兆半导体新型场截止第三代 IGBT 采用创新型的场截止 IGBT
技术，可以提供优越的导通和开关性能，并且易于并联运行。该
设备非常适合谐振或软开关应用，例如感应加热、微波炉等。
低饱和电压：VCE(sat) = 1.45 V （典型值） @ IC = 40 A
器件 100% 经过 ILM(1) 测试
高输入阻抗
应用
•
感应加热、微波炉
快速开关
紧密的参数分布
符合 RoHS 标准
E
C
C
E
G
G
集电极
(FLANGE)
绝对最大额定值
FGH40T65SHDF-F155
符号
描述
单位
V
VCES
VGES
650
集电极－发射极之间电压
栅极－发射极间电压
瞬态栅极－发射极间电压
集电极电流
± 20
V
± 30
V
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
80
A
IC
40
A
集电极电流
ILM (1)
ICM (2)
120
A
集电极脉冲电流
集电极脉冲电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
120
A
@ TC = 25°C
@ TC = 100°C
40
20
A
IF
A
IFM
PD
60
A
@ TC = 25°C
@ TC = 100°C
268
W
W
°C
°C
134
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
Tstg
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
300
°C
TL
注：
1. V = 400 V, V = 15 V, I = 120 A, R = 30 , 感性负载
CC
GE
C
G
2. 重复额定值：脉宽受最大结温限制
1
Publication Order Number:
©2014 飞兆半导体公司
December-2017, Rev. 3
FGH40T65SHDFCN/D
热性能
FGH40T65SHDF_F155
符号
参数
单位
°C/W
°C/W
°C/W
RθJC (IGBT)
0.56
1.75
40
结至外壳热阻最大值
RθJC（二极管） 结至外壳热阻最大值
RθJA
结至环境热阻最大值
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
每管数量
FGH40T65SHDF
FGH40T65SHDF-F155
TO-247 G03
-
-
30
IGBT 电气特性
TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V, IC = 1 mA
VGE = 0 V, IC = 1 mA
650
-
-
-
-
V
集电极 - 发射极击穿电压
BVCES
TJ
击穿电压温度系数电压
0.6
V/°C
ICES
IGES
V
CE = VCES, VGE = 0 V
-
-
-
-
250
A
集电极切断电流
VGE = VGES, VCE = 0 V
± 400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 40 mA, VCE = VGE
IC = 40 A, VGE = 15 V
3.5
-
5.5
7.5
V
V
G-E 阈值电压
1.45
1.81
VCE(sat)
集电极 - 发射极间饱和电压
IC = 40 A, VGE = 15 V,
TC = 175°C
-
1.8
-
V
动态特性
Cies
-
-
-
1982
70
-
-
-
pF
pF
pF
输入电容
V
CE = 30 V VGE = 0 V,
,
Coes
输出电容
f = 1 MHz
Cres
25
反向传输电容
开关特性
Td(on)
Tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
27
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
导通延迟时间
上升时间
Td(off)
Tf
64
ns
关断延迟时间
下降时间
V
CC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
感性负载 , TC = 25°C
3
ns
Eon
1.22
0.44
1.66
18
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
Eoff
Ets
Td(on)
Tr
Td(off)
Tf
31
ns
70
ns
关断延迟时间
下降时间
V
CC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
感性负载 , TC = 175°C
56
ns
Eon
1.78
0.78
2.56
mJ
mJ
mJ
导通开关损耗
关断开关损耗
总开关损耗
Eoff
Ets
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2
IGBT 电气特性 ( 接上页 )
符号 参数
测试条件
最小值 典型值 最大值 单位
Qg
-
-
-
68
12
25
-
-
-
nC
nC
nC
总栅极电荷
V
V
CE = 400 V, IC = 40 A,
GE = 15 V
Qge
Qgc
栅极－发射极间电荷
栅极－集电极间电荷
二极管电气特性 TC = 25°C 除非另有说明
符号 参数
测试条件
最小值 典型值 最大值 单位
TC = 25°C
TC = 175°C
TC = 175°C
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
-
-
-
-
-
-
-
1.5
1.37
153
101
238
343
1493
1.95
VFM
IF = 20 A
V
二极管正向电压
-
-
-
-
-
-
Erec
Trr
J
反向恢复电能
ns
二极管反向恢复时间
IF = 20 A, dIF/dt = 200 A/s
Qrr
nC
二极管反向恢复电荷
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3
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
120
120
TC = 175oC
TC = 25oC
20 V
20 V
15 V
12 V
10 V
12 V
15 V
100
80
60
40
20
0
10 V
90
60
30
0
VGE = 8 V
VGE = 8 V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 饱和电压与可变电流强度下壳温的关系
3
120
Common Emitter
Common Emitter
VGE = 15 V
VGE = 15 V
TC = 25oC
TC = 175oC
90
80 A
2
60
30
0
40 A
IC = 20 A
1
-100
-50
0
50
100
150
200
0
1
2
3
4
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
16
12
20
16
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
12
IC = 20 A
80 A
40 A
40 A
8
8
IC = 20 A
80 A
4
0
4
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
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4
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
10000
Common Emitter
TC = 25oC
Cies
12
VCC = 200 V
300 V
1000
100
400 V
9
6
3
0
Coes
Common Emitter
Cres
VGE = 0 V, f = 1 MHz
TC = 25oC
10
0
20
40
Gate Charge, Qg [nC]
60
80
1
10
Collector-Emitter Voltage, VCE [V]
30
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
1000
100
td(off)
tr
100
tf
td(on)
Common Emitter
VCC = 400 V, VGE = 15 V
Common Emitter
VCC = 400 V, VGE = 15 V
10
1
IC = 40 A
TC = 25oC
TC = 175oC
IC = 40 A
TC = 25oC
TC = 175oC
10
5
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
100
5000
tr
Eon
1000
td(on)
Eoff
Common Emitter
VCC = 400 V, VGE = 15 V
Common Emitter
IC = 40 A
VGE = 15 V, RG = 6
TC = 25oC
TC = 175oC
10
5
TC = 25oC
TC = 175oC
100
20
40
60
80
0
10
20
30
40
50
Gate Resistance, RG []
Collector Current, IC [A]
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5
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
200
10000
100
td(off)
Eon
1000
tf
10
Eoff
Common Emitter
Common Emitter
VGE = 15 V, RG = 6
TC = 25oC
VGE = 15 V, RG = 6
TC = 25oC
TC = 175oC
TC = 175oC
1
20
100
20
40
60
80
40
60
80
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
300
100
250
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
10s
200
150
100
50
VGE = 15/0 V, RG = 6
TC = 25oC
100 s
10
1 ms
10 ms
DC
TC = 75oC
TC = 100oC
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.1
0
1k
1
10
100
1000
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f[Hz]
图 17. 正向特性
图 18. 反向恢复电流
15
80
12
di/dt = 200 A/s
TJ = 25oC
TJ = 75oC
TJ = 175oC
9
6
3
0
di/dt = 100 A/s
di/dt = 200 A/s
10
TC = 25oC
TC = 25oC
TC = 175oC
40
di/dt = 100 A/s
TC = 75oC
TC = 175oC
1
0
0
10
20
30
50
1
2
3
Forward Voltage, VF [V]
Forward Current, IF [A]
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6
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
2000
500
TC = 25oC
TC = 25oC
TC = 175oC
1500
TC = 175oC ---
400
300
200
1000
500
di/dt = 200 A/s
di/dt = 100 A/s
di/dt = 200 A/s
di/dt = 100 A/s
100
0
0
0
10
20
30
40
0
10
20
30
40
Forward Current, IF [A]
Forward Current, IF [A]
图 21. IGBT 瞬态热阻抗
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
single pulse
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
5
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
0.01
1E-3
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
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7
机械尺寸
图 23. TO-247 3L - TO-247，模塑封装， 3 引脚， JEDEC AB 长引脚
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期，如有疑问，请联系飞兆半导体代表核实或获得最新版本。封装规格说明并不扩大飞兆半导体全球范围内的条款与条件，尤其
是其中涉及飞兆半导体产品保修的部分。
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8
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