FGH40T65SPD-F155 [ONSEMI]
IGBT，650V，40A，场截止沟槽;
| 型号： | FGH40T65SPD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，40A，场截止沟槽 栅 双极性晶体管 |
| 文件： | 总9页 (文件大小：1524K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGH40T65SPD
650 V、 40 A 场截止沟道 IGBT
特性
概述
•
•
•
•
•
•
•
•
•
最大结温：TJ =175°C
正温度系数，易于并联运行
高电流能力
飞兆半导体的场截止第 3 代 IGBT 新系列采用新型场截止 IGBT
技术，为光伏逆变器、 UPS、焊机、电信、 ESS 和 PFC 等低导
通和开关损耗至关重要的应用提供最佳性能。
低饱和电压：VCE(sat) =1.85 V （典型值） @ IC=40 A
高输入阻抗
应用
•
光伏逆变器、 UPS、焊机、 PFC、电信、 ESS
快速开关
紧密的参数分布
符合 RoHS 标准
短路耐用性 > 5 μs @ 25°C
E
C
C
G
G
集电极
(FLANGE)
E
绝对最大额定值
FGH40T65SPD-F155
符号
说明
单位
V
VCES
VGES
650
20
30
集电极 - 发射极之间电压
栅极－发射极间电压
瞬态栅极－发射极间电压
集电极电流
V
V
@ TC = 25°C
@ TC = 100°C
80
A
IC
40
A
集电极电流
ICM
IF
120
A
集电极脉冲电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
@ TC = 25°C
@ TC = 100°C
40
A
20
120
A
IFM
PD
A
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
267
W
W
s
°C
°C
134
最大功耗
SCWT
TJ
5
短路耐受时间
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
°C
注意：
1: 重复额定值：脉宽受最大结温限制
热性能
符号
参数
典型值
最大值
0.56
单位
°C/W
°C/W
°C/W
RJC(IGBT)
RJC（二极管）
RJA
-
-
-
结点 - 壳体的热阻
结点 - 壳体的热阻
结至环境热阻
1.71
40
©2013 飞兆半导体公司
December-2017, 修订版 3
Publication Order Number:
FGH40T65SPDCN/D
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
每卷管数量
FGH40T65SPD
FGH40T65SPD-F155
TO-247 G03
-
-
30ea
IGBT 的电气特性 TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
650
-
-
-
-
V
集电极 - 发射极击穿电压
VGE = 0 V， IC = 1 mA
GE = 0 V， IC = 1 mA
DBVCES
DTJ
击穿温度系数电压
V
0.6
V/°C
ICES
IGES
-
-
-
-
250
μA
集电极切断电流
VCE = VCES， VGE = 0 V
VGE = VGES， VCE = 0 V
± 400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 40 mA, VCE = VGE
IC = 40 A, VGE = 15 V
4
-
5.5
7.5
2.4
V
V
G-E 阈值电压
1.85
VCE(sat)
集电极 - 发射极间饱和电压
I
T
C = 40 A， VGE = 15 V，
C = 175°C
-
2.51
-
V
动态特性
Cies
-
-
-
1370
94
-
-
-
pF
pF
pF
输入电容
V
CE = 30 V， VGE = 0 V，
Coes
输出电容
f = 1 MHz
Cres
16
反向传输电容
开关特性
Td(on)
Tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
16
42
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
导通延迟时间
上升时间
Td(off)
Tf
37
ns
关断延迟时间
下降时间
V
R
CC = 400 V， IC = 40 A，
G = 6 ， VGE = 15 V，
感性负载， TC = 25°C
11
ns
Eon
1.16
0.28
1.44
14
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
Eoff
Ets
Td(on)
Tr
Td(off)
Tf
49
ns
38
ns
关断延迟时间
下降时间
V
CC = 400 V， IC = 40 A，
RG = 6 ， VGE = 15 V，
感性负载， TC =175°C
18
ns
Eon
1.54
0.52
2.06
-
mJ
mJ
mJ
μs
导通开关损耗
关断开关损耗
总开关损耗
短路耐受时间
Eoff
Ets
TSC
V
CC = 400 V， VGE = 15 V，
R
G = 10
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2
IGBT 电气特性（接上页）
符号 参数
测试条件
最小值 典型值 最大值 单位
Qg
-
-
-
35
11
12
-
-
-
nC
nC
nC
总栅极电荷
VCE = 400 V， IC = 40 A，
Qge
Qgc
栅极－发射极间电荷
栅极－发射极间电荷
V
GE = 15 V
二极管电气特性 TC = 25°C 除非另有说明
符号 参数
测试条件
最小值 典型值 最大值 单位
TC = 25°C
C = 175°C
-
-
-
-
-
-
-
2.2
1.9
76
2.7
VFM
IF = 20 A
V
二极管正向电压
T
-
-
-
-
-
-
Erec
Trr
TC = 175°C
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
μJ
反向恢复电能
34
ns
二极管反向恢复时间
IF = 20 A， dIF/dt=200 A/μs
196
52
Qrr
nC
二极管反向恢复电荷
638
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3
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
120
120
TC = 25oC
TC = 175oC
20V
15V
12V
20V
15V
12V
10V
90
60
30
0
90
60
30
0
10V
VGE = 8V
VGE = 8V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 饱和电压与壳温的关系 （可变电流强度下）
5
120
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
4
90
80A
3
60
30
0
40A
2
IC = 20A
1
-100
-50
0
50
100
150
200
0
1
2
3
4
5
6
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V
图 6. 饱和电压与 V 的关系
GE 的关系
GE
20
16
12
8
20
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
16
12
8
80A
40A
80A
IC = 20A
40A
IC = 20A
4
0
4
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
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4
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
10000
15
Common Emitter
Common Emitter
TC = 25oC
VGE = 0V, f = 1MHz
TC = 25oC
VCC = 200V
300V
12
Cies
400V
1000
100
10
9
6
3
0
Coes
Cres
1
10
Collector-Emitter Voltage, VCE [V]
30
0
10
20
Gate Charge, Qg [nC]
30
40
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
1000
200
Common Emitter
VCC = 400V, VGE = 15V
100
IC = 40A
TC = 25oC
TC = 175oC
tr
td(off)
100
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
tf
IC = 40A
TC = 25oC
TC = 175oC
10
1
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
200
20000
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
Common Emitter
VCC = 400V, VGE = 15V
10000
1000
100
IC = 40A
TC = 25oC
TC = 175oC
tr
TC = 175oC
100
Eon
td(on)
Eoff
10
5
20
40
60
80
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG []
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5
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
1000
20000
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
10000
1000
100
Eon
100
tf
Eoff
td(off)
10
1
20
40
60
80
20
40
60
80
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
300
100
140
VCC = 400V
load current: peak of square wave
120
100
80
60
40
20
0
10s
TC = 100oC
100s
10
1ms
10 ms
DC
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
Square Wave
TC = 100oC
Power Dissipation = 134W
3. Single Pulse
0.1
1
10
100
1000
1k
10k
100k
1M
Switching Frequency, f[Hz]
Collector-Emitter Voltage, VCE [V]
图 17. 正向特性
图 18. 反向恢复电流
200
100
8
TC = 25oC
TC = 175oC
6
TJ = 175oC
diF/dt = 200A/s
diF/dt = 100A/s
TJ = 25oC
TJ = 75oC
4
2
0
10
diF/dt = 200A/s
diF/dt = 100A/s
TC = 25oC
TC = 75oC
TC = 175oC
4
1
0
1
2
3
5
0
10
20
30
40
Forward Voltage, VF [V]
Forward Current, IF [A]
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6
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
300
800
TC = 25oC
TC = 25oC
250 TC = 175oC ---
TC = 175oC
600
200
150
400
diF/dt = 200A/s
diF/dt = 100A/s
diF/dt = 100A/s
diF/dt = 200A/s
100
50
0
200
0
0
10
20
30
40
0
10
20
30
40
Forward Current, IF [A]
Forward Current, IF [A]
图 21. IGBT 瞬态热阻抗
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
single pulse
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
5
1
0.5
0.2
0.1
0.1
0.01
1E-3
0.05
0.02
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
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7
机械尺寸
图 23. TO-247 3L - TO-247，模塑封装， 3 引脚， JEDEC AB 长引脚
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
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8
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