MMFT6661T1 [ONSEMI]

500mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN;


型号：	MMFT6661T1
厂家：	ONSEMI
描述：	500mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN 开关光电二极管晶体管
文件：	总6页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Order this document

by MMFT6661T1/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode

Silicon Gate TMOS

SOT–223 for Surface Mount

MEDIUM POWER

TMOS FET

500 mA

90 VOLTS

This TMOS medium power field effect transistor is designed for

high speed, low loss power switching applications such as

switching regulators, dc–dc converters, solenoid and relay drivers.

The device is housed in the SOT–223 package which is designed

for medium power surface mount applications.

= 4.0 OHM MAX

DS(on)

•

Silicon Gate for Fast Switching Speeds

= 4.0 Ohm Max

DS(on)

Low Drive Requirement, V

2,4 DRAIN

= 2.0 Volts Max

The SOT–223 Package can be soldered using wave or reflow.

The formed leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

CASE 318E–04, STYLE 3

TO–261AA

•

Available in 12 mm Tape and Reel

Use MMFT6661T1 to order the 7 inch/1000 unit reel

Use MMFT6661T3 to order the 13 inch/4000 unit reel

GATE

3 SOURCE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Symbol

Value

Unit

Vdc

Gate–to–Source Voltage — Non–Repetitive

Drain Current

±30

500

Vdc

mAdc

(1)

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.8

6.4

Watts

mW/°C

Operating and Storage Temperature Range

T , T

–65 to 150

°C

stg

DEVICE MARKING

T6661

THERMAL CHARACTERISTICS

Thermal Resistance — Junction–to–Ambient

156

°C/W

θJA

Maximum Temperature for Soldering Purposes

Time in Solder Bath

260

°C

Sec

1. Device mounted on FR–4 glass epoxy printed circuit board using minimum recommended footprint.

TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

—

Vdc

µAdc

nAdc

(BR)DSS

= 0, I = 10 µA)

Zero Gate Voltage Drain Current

(V = 90 V, V = 0)

DSS

Gate–Body Leakage Current

(V = 15 Vdc, V = 0)

100

GSS

(2)

ON CHARACTERISTICS

Gate Threshold Voltage

0.8

—

2.0

4.0

Vdc

Ohms

Vdc

GS(th)

DS(on)

= V , I = 1.0 mAdc)

Static Drain–to–Source On–Resistance

(V = 10 Vdc, I = 1.0 Adc)

Drain–to–Source On–Voltage

= 10 V, I = 1.0 A)

—

4.0

1.6

= 5.0 V, I = 0.3 A)

Forward Transconductance

(V = 25 V, I = 0.5 A)

—

200

—

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

—

iss

= 25 V, V

= 0,

f = 1.0 MHz)

Output Capacitance

Transfer Capacitance

Total Gate Charge

oss

6.0

rss

1.7

= 10 V, I = 1.0 A,

Gate–Source Charge

Gate–Drain Charge

0.34

0.23

= 72 V)

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

TYPICAL ELECTRICAL CHARACTERISTICS

2.5

1.5

25°C

= –55°C

V = 10 V

= 25

125°C

1.2

0.9

0.6

0.3

7 V 8 V

= 10 V

6 V

5 V

4 V

1.5

0.5

V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)

V , GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

= 10 V

I = 1 A

= 10 V

= 125

°C

–55°C

0.1

0.3

0.6

0.9

1.2

1.5

–75

–50

–25

100

125

150

, DRAIN CURRENT (AMPS)

T , JUNCTION TEMPERATURE (

Figure 3. On–Resistance versus Drain Current

Figure 4. On–Resistance Variation with Temperature

100

= 0 V

f = 1 MHz

= 25°C

= 125°C

iss

= 25°C

0.1

oss

rss

0.01

0.5

1.5

, SOURCE–DRAIN DIODE FORWARD VOLTAGE (VOLTS)

V , DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 5. Source–Drain Diode Forward Voltage

Figure 6. Capacitance versus Drain–Source Voltage

= 1 A

= 10 V

= 25

°C

0.8

0.6

0.4

0.2

= 72 V

= –55°C

°C

125°C

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

0.3

0.6

, DRAIN CURRENT (AMPS)

0.9

1.2

1.5

Q , TOTAL GATE CHARGE (nC)

Figure 7. Gate Charge versus Gate–to–Source Voltage

Figure 8. Transconductance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.15

3.8

0.079

2.0

0.248

6.3

0.091

2.3

0.091

2.3

0.079

2.0

inches

0.059

1.5

0.059

1.5

0.059

1.5

SOT-223

SOT-223 POWER DISSIPATION

The power dissipation of the SOT-223 is a function of the

dissipation can almost be doubled with this method, area is

taken up on the printed circuit board which can defeat the

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

purpose of using surface mount technology. A graph of R

versus collector pad area is shown in Figure 9.

θJA

by T

, the maximum rated junction temperature of the

, the thermal resistance from the device junction to

J(max)

die, R

160

θJA

ambient, and the operating temperature, T . Using the

values provided on the data sheet for the SOT-223 package,

Board Material = 0.0625

G-10/FR-4, 2 oz Copper

″

T = 25°C

140

120

can be calculated as follows:

0.8 Watts

– T

J(max)

θJA

1.5 Watts

1.25 Watts*

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

100

the equation for an ambient temperature T of 25°C, one can

calculate the power dissipation of the device which in this

case is 0.8 watts.

*Mounted on the DPAK footprint

0.0

0.2

0.4

0.6

0.8

1.0

150°C – 25°C

A, Area (square inches)

= 0.8 watts

156°C/W

Figure 9. Thermal Resistance versus Collector

Pad Area for the SOT-223 Package (Typical)

The 156°C/W for the SOT-223 package assumes the use

of the recommended footprint on a glass epoxy printed circuit

board to achieve a power dissipation of 0.8 watts. There are

other alternatives to achieving higher power dissipation from

the SOT-223 package. One is to increase the area of the

collector pad. By increasing the area of the collector pad, the

power dissipation can be increased. Although the power

Another alternative would be to use a ceramic substrate or

an aluminum core board such as Thermal Clad . Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the SOT-223 package should be

the same as the pad size on the printed circuit board, i.e., a

1:1 registration.

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•

The soldering temperature and time should not exceed

260°C for more than 10 seconds.

When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

•

Always preheat the device.

The delta temperature between the preheat and

soldering should be 100°C or less.*

•

Mechanical stress or shock should not be applied during

cooling

•

When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference should be a maximum of 10°C.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control

actual temperature that might be experienced on the surface

of a test board at or near a central solder joint. The two

profiles are based on a high density and a low density board.

The Vitronics SMD310 convection/infrared reflow soldering

system was used to generate this profile. The type of solder

used was 62/36/2 Tin Lead Silver with a melting point

between 177–189°C. When this type of furnace is used for

solder reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a large surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

settings that will give the desired heat pattern. The operator

must set temperatures for several heating zones, and a

figure for belt speed. Taken together, these control settings

make up a heating “profile” for that particular circuit board.

On machines controlled by a computer, the computer

remembers these profiles from one operating session to the

next. Figure 10 shows a typical heating profile for use when

soldering a surface mount device to a printed circuit board.

This profile will vary among soldering systems but it is a good

starting point. Factors that can affect the profile include the

type of soldering system in use, density and types of

components on the board, type of solder used, and the type

of board or substrate material being used. This profile shows

temperature versus time. The line on the graph shows the

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

STEP 6

VENT COOLING

STEP 7

STEP 1

PREHEAT

ZONE 1

“RAMP”

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

STEP 2

VENT

“SOAK”

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

205°

219°C

170°C

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

200°C

PEAK AT

SOLDER

JOINT

160°C

150°C

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

100°C

140°C

MASS OF ASSEMBLY)

100°C

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

50°C

TIME (3 TO 7 MINUTES TOTAL)

MAX

Figure 10. Typical Solder Heating Profile

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

DIM

MIN

MAX

0.263

0.145

0.068

0.035

0.126

0.094

MIN

6.30

3.30

1.50

0.60

2.90

2.20

0.020

0.24

1.50

0.85

MAX

6.70

3.70

1.75

0.89

3.20

2.40

0.100

0.35

2.00

1.05

0.249

0.130

0.060

0.024

0.115

0.087

0.0008 0.0040

0.009

0.060

0.033

0.014

0.078

0.041

0.08 (0003)

0.264

0.287

6.70

7.30

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

CASE 318E–04

ISSUE H

TO-261AA

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315

Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

INTERNET: http://Design–NET.com

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

MMFT6661T1/D

Motorola Small–Signal Transistors, FETs and Diodes Device Data

◊

MMFT6661T1 [ONSEMI]

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