NSS12100UW3TCG [ONSEMI]
12 V, 1 A, Low VCE(sat) PNP Transistor; 12 V ， 1 A，低VCE （ sat）的PNP晶体管
| 型号： | NSS12100UW3TCG |
| 厂家： | 
ONSEMI |
| 描述： | 12 V, 1 A, Low VCE(sat) PNP Transistor |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS12100UW3TCG
12 V, 1 A, Low VCE(sat)
PNP Transistor
2
ON Semiconductor's e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
CE(sat)
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12 VOLTS, 1.0 AMPS
Typical application are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 400 mW
COLLECTOR
3
2
1
BASE
Features
•ꢀHigh Current Capability (1 A)
•ꢀHigh Power Handling (Up to 740 mW)
2
EMITTER
•ꢀLow V
(200 mV Typical @ 500 mA)
CE(s)
•ꢀSmall Size
•ꢀLow Noise
•ꢀThis is a Pb-Free Device
3
WDFN3
CASE 506AU
2
1
Benefits
•ꢀHigh Specific Current and Power Capability Reduces Required PCB Area
•ꢀReduced Parasitic Losses Increases Battery Life
MARKING DIAGRAM
VG M
G
MAXIMUM RATINGS (T = 25°C)
A
1
Rating
Symbol
Max
-12
-12
-5.0
Unit
Vdc
Vdc
Vdc
Adc
VG = Specific Device Code
M
= Date Code
= Pb-Free Package
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
V
CEO
V
CBO
V
EBO
G
ORDERING INFORMATION
Collector Current - Continuous
Collector Current - Peak
I
C
-1.0
-2.0
I
CM
†
Device
NSS12100UW3TCG
Package
Shipping
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
WDFN3
(Pb-Free)
3000/
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©ꢀ Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 0
1
Publication Order Number:
NSS12100UW3/D
NSS12100UW3TCG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, T = 25°C
Derate above 25°C
P
D
(Note 1)
740
6.0
mW
mW/°C
A
Thermal Resistance, Junction-to-Ambient
R
(Note 1)
169
°C/W
q
JA
Total Device Dissipation, T = 25°C
Derate above 25°C
P
D
(Note 2)
1.1
9.0
W
mW/°C
A
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead 6
Junction and Storage Temperature Range
R
R
(Note 2)
(Note 2)
110
33
°C/W
°C/W
°C
q
JA
q
JL
T , T
J
-55 to +150
stg
2
1. FR-ā4 @ 100 mm , 1 oz copper traces.
2
2. FR-ā4 @ 500 mm , 1 oz copper traces.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collectorā-āEmitter Breakdown Voltage, (I = -10 mAdc, I = 0)
B
V
-12
-12
-5.0
-
-
-
-
-
Vdc
Vdc
C
(BR)CEO
(BR)CBO
(BR)EBO
Collectorā-āBase Breakdown Voltage, (I = -0.1 mAdc, I = 0)
E
V
V
C
Emitterā-āBase Breakdown Voltage, (I = -0.1 mAdc, I = 0)
C
-
-
Vdc
E
Collector Cutoff Current, (V = -12 Vdc, I = 0)
CB E
I
CBO
-0.02
-0.03
-0.1
-0.1
mAdc
mAdc
Emitter Cutoff Current, (V
ON CHARACTERISTICS
DC Current Gain (Note 3)
= -5.0 Vdc, I = 0)
E
I
EBO
-
CES
h
FE
(I = -10 mA, V = -2.0 V)
200
100
75
-
-
-
400
250
-
C
CE
(I = -500 mA, V = -2.0 V)
C
CE
(I = -1.0 A, V = -2.0 V)
C
CE
Collectorā-āEmitter Saturation Voltage (Note 3)
(I = -0.05 A, I = -0.005 A) (Note 4)
(I = -0.1 A, I = -0.002 A)
V
V
CE(sat)
-
-
-
-
-
-0.030 -0.040
-0.080 -0.100
-0.050 -0.060
-0.200 -0.225
-0.400 -0.440
C
B
C
B
(I = -0.1 A, I = -0.010 A)
C
B
(I = -0.5 A, I = -0.050 A)
C
B
(I = -1.0 A, I = -0.100 A)
C
B
Baseā-āEmitter Saturation Voltage (Note 3)
(I = -1.0 A, I = -0.01 A)
V
V
V
BE(sat)
-
-0.95
-1.15
C
B
Baseā-āEmitter Turn-on Voltage (Note 3)
(I = -2.0 A, V = -1.0 V)
V
BE(on)
-
-
-
-1.05
40
-1.20
50
C
CE
Input Capacitance (V = -0.5 V, f = 1.0 MHz)
EB
Cibo
pF
pF
Output Capacitance (V = -3.0 V, f = 1.0 MHz)
CB
Cobo
15
20
SWITCHING CHARACTERISTICS
Delay (V = -10 V, I = 750 mA, I = 15 mA)
B1
t
t
-
-
-
-
-
-
-
-
20
90
ns
ns
ns
ns
CC
C
d
Rise (V = -10 V, I = 750 mA, I = 15 mA)
B1
t
r
CC
C
Storage (V = -10 V, I = 750 mA, I = 15 mA)
B1
140
100
CC
C
s
Fall (V = -10 V, I = 750 mA, I = 15 mA)
B1
t
CC
C
f
SMALL-ꢀSIGNAL CHARACTERISTICS
Currentā-āGain - Bandwidth Product, (I = -100 mA, V = -5 Vdc, f = 100 MHz)
f
200
-
-
-
-
MHz
dB
C
CE
T
Noise Figure, (I = -0.2 mA, V = -5 Vdc, R = 2 kW, f = 1 kHz, BW = 200Hz)
S
NF
5.0
C
CE
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
4. Guaranteed by design but not tested.
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2
NSS12100UW3TCG
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
3.0
V
= -55°C
25°C
I /I = 100
C B
CE(sat)
V
= 150°C
I /I = 10
C B
CE(sat)
2.5
2.0
25°C
-55°C
150°C
1.5
1.0
0.5
0
0.1
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. Collector Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
600
500
400
300
200
150°C (5.0 V)
I /I = 10
B
C
150°C (2.0 V)
25°C (5.0 V)
T = -55°C
A
25°C (2.0 V)
0.6 25°C
-55°C (5.0 V)
0.4
150°C
-55°C (2.0 V)
100
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
V
= -1.0 V
10 mA
100 mA 300 mA
I = 500 mA
C
CE
T = -55°C
A
25°C
150°C
0.2
0
0.2
0
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn-On Voltage vs.
Collector Current
Figure 6. Saturation Region
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3
NSS12100UW3TCG
50
45
40
35
30
30
25
C
obo(pF)
20
15
10
C
ibo(pF)
25
20
5
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
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4
NSS12100UW3TCG
PACKAGE DIMENSIONS
WDFN3
CASE 506AU-01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .
D
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
B
PIN ONE
REFERENCE
MILLIMETERS
INCHES
NOM
0.030
DIM
A
A1
A3
b
D
D2
E
MIN
0.70
0.00
NOM
0.75
MAX
0.80
0.05
MIN
0.028
0.000
MAX
0.031
0.002
0.20 REF
0.30
2.00 BSC
1.50
2.00 BSC
1.00
0.008 REF
0.012
0.079 BSC
0.059
0.079 BSC
0.039
0.051 BSC
0.014 REF
0.016
E
0.25
1.40
0.90
0.35
1.60
1.10
0.010
0.055
0.035
0.014
0.063
0.043
2 X
E2
e
K
0.10
C
1.30 BSC
0.35 REF
0.40
2 X
L
0.35
0.45
0.014
0.018
0.10
C
TOP VIEW
SOLDERING FOOTPRINT*
A
0.10
0.08
C
C
1.300
2X
8 X
0.400
(A3)
SIDE VIEW
0.600
A1
SEATING
PLANE
C
0.250
D2
e
1.100
0.300
e/2
2
1
2X L
0.400
K
0.275
1.600
E2
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
3
0.10
0.05
C
C
A
B
3X b
NOTE 3
BOTTOM VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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NSS12100UW3/D
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