NSS12100XV6T1G [ONSEMI]
12 V, 1 A, Low VCE(sat) PNP Transistor; 12 V , 1 A,低VCE ( sat)的PNP晶体管![NSS12100XV6T1G](http://pdffile.icpdf.com/pdf1/p00181/img/icpdf/NSS12_1019156_icpdf.jpg)
型号: | NSS12100XV6T1G |
厂家: | ![]() |
描述: | 12 V, 1 A, Low VCE(sat) PNP Transistor |
文件: | 总5页 (文件大小:100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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NSS12100XV6T1G
12 V, 1 A, Low VCE(sat)
PNP Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
CE(sat)
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12 VOLTS, 1.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 300 mW
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
COLLECTOR
1, 2, 5, 6
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
3
BASE
Features
4
• High Current Capability (1 A)
EMITTER
• High Power Handling (Up to 650 mW)
• Low V
(150 mV Typical @ 500 mA)
CE(s)
• Small Size
• This is a Pb−Free Device
1
SOT−563
CASE 463A
STYLE 4
Benefits
• High Specific Current and Power Capability Reduces Required PCB Area
• Reduced Parasitic Losses Increases Battery Life
DEVICE MARKING
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Max
−12
−12
−5.0
Unit
Vdc
Vdc
Vdc
Adc
VE M G
G
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
1
VE = Specific Device Code
M
G
= Month Code
= Pb−Free Package
(Note: Microdot may be in either location)
Collector Current − Continuous
Collector Current − Peak
I
−1.0
−2.0
C
I
CM
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†
Device
Package
Shipping
NSS12100XV6T1G SOT−563 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
November, 2006 − Rev. 0
NSS12100XV6/D
NSS12100XV6T1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
(Note 1)
500
mW
D
T = 25°C
A
Derate above 25°C
4.0
mW/°C
°C/W
Thermal Resistance,
R
q
JA
(Note 1)
250
Junction−to−Ambient
Total Device Dissipation
P
(Note 2)
(Note 2)
650
mW
D
T = 25°C
A
Derate above 25°C
5.2
mW/°C
°C/W
Thermal Resistance,
R
q
192
JA
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead 6
R
105
1.0
°C/W
W
q
JL
Total Device Dissipation
(Single Pulse < 10 sec.)
P Single
D
Junction and Storage
Temperature Range
T , T
−55 to +150
°C
J
stg
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (I = −10 mAdc, I = 0)
V
−12
−12
−5.0
−
−
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage, (I = −0.1 mAdc, I = 0)
V
C
E
Emitter−Base Breakdown Voltage, (I = −0.1 mAdc, I = 0)
V
−
−
Vdc
E
C
Collector Cutoff Current, (V = −12 Vdc, I = 0)
I
CBO
−0.02
−0.03
−0.1
−0.1
mAdc
mAdc
CB
E
Emitter Cutoff Current, (V
= −5.0 Vdc, I = 0)
I
EBO
−
CES
E
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
(I = −10 mA, V = −2.0 V)
200
100
90
−
−
−
−
−
−
C
CE
(I = −500 mA, V = −2.0 V)
C
CE
(I = −1.0 A, V = −2.0 V)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = −0.05 A, I = −0.005 A) (Note 4)
V
V
CE(sat)
BE(sat)
−
−
−
−
−
−0.030 −0.040
−0.080 −0.100
−0.050 −0.060
−0.200 −0.225
−0.400 −0.440
C
B
(I = −0.1 A, I = −0.002 A)
C
B
(I = −0.1 A, I = −0.010 A)
C
B
(I = −0.5 A, I = −0.050 A)
C
B
(I = −1.0 A, I = −0.100 A)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = −1.0 A, I = −0.01 A)
V
V
V
−
0.95
−1.15
C
B
Base−Emitter Turn−on Voltage (Note 3)
(I = −2.0 A, V = −3.0 V)
V
BE(on)
−
−
−
−1.05
−1.15
50
C
CE
Input Capacitance (V = −0.5 V, f = 1.0 MHz)
Cibo
pF
pF
EB
Output Capacitance (V = −3.0 V, f = 1.0 MHz)
Cobo
20
CB
2
2
1. FR−4 @ 100 mm , 1 oz copper traces.
2. FR−4 @ 500 mm , 1 oz copper traces.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
4. Guaranteed by design but not tested.
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2
NSS12100XV6T1G
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
3.0
V
= −55°C
25°C
I /I = 100
CE(sat)
C
B
V
= 150°C
I /I = 10
CE(sat)
C
B
25°C
2.5
2.0
−55°C
150°C
1.5
1.0
0.5
0
0.1
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. Collector Emitter Saturation Voltage vs.
Collector Current
1.4
600
500
400
300
200
150°C (5.0 V)
I /I = 10
C
B
1.2
1.0
0.8
150°C (2.0 V)
25°C (5.0 V)
T = −55°C
A
25°C (2.0 V)
0.6 25°C
−55°C (5.0 V)
0.4
150°C
−55°C (2.0 V)
100
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
V
= −1.0 V
10 mA
100 mA 300 mA
I = 500 mA
C
CE
T = −55°C
A
25°C
150°C
0.2
0
0.2
0
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn−On Voltage vs.
Figure 6. Saturation Region
Collector Current
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3
NSS12100XV6T1G
50
45
40
35
30
30
25
20
15
10
C
obo(pF)
C
ibo(pF)
25
20
5
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
, EMITTER BASE VOLTAGE (V)
EB
V
, COLLECTOR BASE VOLTAGE (V)
CB
Figure 7. Input Capacitance
Figure 8. Output Capacitance
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4
NSS12100XV6T1G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
D
−X−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
6
5
2
4
3
E
−Y−
H
E
MILLIMETERS
DIM MIN NOM MAX MIN
INCHES
NOM MAX
1
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
1.60
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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NSS12100XV63/D
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