NSVMMBT5550LT1G [ONSEMI]
高电压 NPN 双极晶体管;
| 型号： | NSVMMBT5550LT1G |
| 厂家： | 
ONSEMI |
| 描述： | 高电压 NPN 双极晶体管 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol 5550 5551
Unit
Vdc
1
BASE
V
CEO
V
CBO
V
EBO
140
160
160
180
Vdc
2
6.0
Vdc
EMITTER
Collector Current − Continuous
I
C
600
mAdc
MARKING
DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
xxxM
SOT−23 (TO−236)
CASE 318
THERMAL CHARACTERISTICS
STYLE 6
Characteristic
Symbol
Max
Unit
xxx = MMBT550LT1 = M1F,
Total Device Dissipation
FR−5 Board (Note 1)
P
D
225
mW
MMBT5551LT1, LT3, LT1G = G1
T = 25°C
Derate Above 25°C
M
= Month Code
A
1.8
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
ORDERING INFORMATION
†
Device
Shipping
Package
Total Device Dissipation
P
D
300
mW
Alumina Substrate (Note 2)
MMBT5550LT1
MMBT5550LT1G
3000 Tape & Reel
3000 Tape & Reel
SOT−23
T = 25°C
A
Derate Above 25°C
2.4
mW/°C
°C/W
SOT−23
(Pb−Free)
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
MMBT5551LT1
3000 Tape & Reel
3000 Tape & Reel
SOT−23
MMBT5551LT1G
SOT−23
(Pb−Free)
Junction and Storage Temperature
T , T
J
−55 to +150
°C
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
MMBT5551LT3
10,000 Tape & Reel
10,000 Tape & Reel
SOT−23
MMBT5551LT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
December, 2004 − Rev. 4
MMBT5550LT1/D
MMBT5550LT1, MMBT5551LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
MMBT5550
MMBT5551
140
160
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
Vdc
Vdc
MMBT5550
MMBT5551
160
180
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
6.0
−
E
C
Collector Cutoff Current
(V = 100 Vdc, I = 0)
I
CBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
−
−
−
−
100
50
100
50
nAdc
CB
E
(V = 120 Vdc, I = 0)
CB
E
(V = 100 Vdc, I = 0, T = 100°C)
mAdc
CB
E
A
(V = 120 Vdc, I = 0, T = 100°C)
CB
E
A
Emitter Cutoff Current
(V = 4.0 Vdc, I = 0)
I
nAdc
EBO
−
50
EB
C
ON CHARACTERISTICS
DC Current Gain
(I = 1.0 mAdc, V = 5.0 Vdc)
C
h
FE
−
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
60
80
60
80
20
30
−
−
250
250
−
CE
(I = 10 mAdc, V = 5.0 Vdc)
C
CE
(I = 50 mAdc, V = 5.0 Vdc)
C
CE
−
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
nA
CE(sat)
Both Types
MMBT5550
MMBT5551
−
−
−
0.15
0.25
0.20
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
Both Types
MMBT5550
MMBT5551
−
−
−
1.0
1.2
1.0
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Collector Emitter Cut−off
(V = 10 V)
I
CES
Both Types
−
−
50
100
CB
(V = 75 V)
CB
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
http://onsemi.com
2
MMBT5550LT1, MMBT5551LT1
500
300
200
V
V
= 1.0 V
= 5.0 V
CE
T = 125°C
J
CE
25°C
100
−
55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1
10
1.0
T = 25°C
J
V
CE
= 30 V
0
10
0.8
T = 125°C
J
V
@ I /I = 10
C B
−1
BE(sat)
10
I
C
= I
CES
0.6
0.4
0.2
0
−2
10
10
75°C
REVERSE
25°C
−3
FORWARD
−4
10
10
V
@ I /I = 10
C B
CE(sat)
−5
0.4 0.3 0.2 0.1
0
0.1
0.2 0.3
0.4 0.5 0.6
0.1 0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50 100
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Cut−Off Region
Figure 4. “On” Voltages
http://onsemi.com
3
MMBT5550LT1, MMBT5551LT1
2.5
2.0
1.5
T = −55°C to +135°C
J
1.0
0.5
0
V
V
CC
30 V
BB
−ꢀ8.8 V
10.2 V
q
for V
CE(sat)
VC
V
in
100
R
3.0 k
R
C
0.25 mF
−0.5
−1.0
−1.5
−2.0
−2.5
10 ms
INPUT PULSE
B
V
out
5.1 k
100
q
for V
BE(sat)
VB
t , t ≤ 10 ns
1N914
r
f
DUTY CYCLE = 1.0%
V
in
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30 50 100
Values Shown are for I @ 10 mA
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Temperature Coefficients
Figure 6. Switching Time Test Circuit
100
1000
500
I /I = 10
C B
70
50
T = 25°C
J
T = 25°C
J
t @ V = 120 V
r CC
30
20
300
200
t @ V = 30 V
r CC
10
100
50
C
ibo
7.0
5.0
t @ V
d
= 1.0 V
EB(off)
C
obo
3.0
2.0
30
20
V
CC
= 120 V
1.0
10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20 30 50 100 200
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 7. Capacitances
Figure 8. Turn−On Time
5000
I /I = 10
C B
t @ V = 120 V
f CC
3000
2000
T = 25°C
J
t @ V = 30 V
f CC
1000
500
300
t @ V = 120 V
s CC
200
100
50
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
Figure 9. Turn−Off Time
http://onsemi.com
4
MMBT5550LT1, MMBT5551LT1
PACKAGE DIMENSIONS
SOT−23−3 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
S
C
B
1
2
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
V
G
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
H
J
D
K
K
L
S
V
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MMBT5550LT1, MMBT5551LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMBT5550LT1/D
相关型号：
©2020 ICPDF网 联系我们和版权申明