NSVMSB1218A-RT1G [ONSEMI]
PNP Bipolar Transistor;
| 型号： | NSVMSB1218A-RT1G |
| 厂家： | 
ONSEMI |
| 描述： | PNP Bipolar Transistor 小信号双极晶体管 |
| 文件： | 总4页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSB1218A--RT1G
PNP Silicon General
Purpose Amplifier
Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC--70/SOT--323 package which is designed for low power surface
mount applications.
http://onsemi.com
COLLECTOR
3
Features
High hFE, 210--460
Low VCE(sat), < 0.5 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T = 25C)
A
1
2
BASE
EMITTER
Rating
Collector--Base Voltage
Collector--Emitter Voltage
Emitter--Base Voltage
Symbol
Value
45
Unit
Vdc
V
(BR)CBO
(BR)CEO
(BR)EBO
3
V
V
45
Vdc
1
7.0
Vdc
2
Collector Current -- Continuous
Collector Current -- Peak
THERMAL CHARACTERISTICS
Rating
I
100
200
mAdc
mAdc
C
I
C(P)
SC--70 (SOT--323)
CASE 419
STYLE 4
Symbol
Max
150
Unit
mW
C
Power Dissipation (Note 1)
Junction Temperature
P
D
MARKING DIAGRAM
T
J
150
Storage Temperature Range
T
stg
--55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristic
BR M G
G
Symbol
Min Max
Unit
1
Collector--Emitter Breakdown Voltage
V
45
45
7.0
--
--
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 2.0 mAdc, I = 0)
C
B
Collector--Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
--
Vdc
Vdc
mA
BR = Device Code
C
E
M
G
= Date Code*
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Emitter--Base Breakdown Voltage
(I = 10 mAdc, I = 0)
--
E
E
Collector--Base Cutoff Current
(V = 20 Vdc, I = 0)
I
I
0.1
100
340
0.5
CBO
CEO
CB
E
Collector--Emitter Cutoff Current
(V = 10 Vdc, I = 0)
--
mA
ORDERING INFORMATION
CE
B
†
Device
Package
Shipping
DC Current Gain (Note 2)
(V = 10 Vdc, I = 2.0 mAdc)
h
210
--
--
FE1
MSB1218A--RT1G
SC--70
(Pb--Free)
3000 /Tape & Reel
CE
C
Collector--Emitter Saturation Voltage
(Note 2) (I = 100 mAdc, I = 10 mAdc)
V
Vdc
CE(sat)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
C
B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 -- Rev. 7
MSB1218A--RT1/D
MSB1218A--RT1G
250
T = 25C
A
120
90
200
150
300 mA
250
200
100
50
0
60
150
100
R
θ
= 833C/W
JA
30
0
I = 50 mA
B
-- 50
0
50
100
150
0
3
6
9
12
15
100
4
T , AMBIENT TEMPERATURE (C)
V
, COLLECTOR VOLTAGE (V)
CE
A
Figure 1. Derating Curve
Figure 2. IC -- V CE
1000
100
2
V
= 10 V
CE
T = 25C
A
T = 25C
A
T = 75C
A
1.5
1
T = -- 25C
A
0.5
0
10
0.1
1
10
100
0.01
0.1
1
10
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 3. DC Current Gain
Figure 4. Collector Saturation Region
900
13
800
700
600
500
400
300
12
11
10
9
8
7
T = 25C
A
200
100
0
V
= 5 V
CE
6
0.2 0.5
1
5
10 20 40 60 80 100 150 200
0
1
2
3
I , COLLECTOR CURRENT (mA)
C
V
(V)
EB
Figure 5. On Voltage
Figure 6. Capacitance
http://onsemi.com
2
MSB1218A--RT1G
14
12
10
8
6
4
2
0
0
10
20
(V)
30
40
V
CB
Figure 7. Capacitance
http://onsemi.com
3
MSB1218A--RT1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 4:
c
PIN 1. CATHODE
2. CATHODE
3. ANODE
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
SCALE 10:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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MSB1218A--RT1/D
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