NSVT1418LT1G [ONSEMI]
双极晶体管，160V，-1A，低饱和压 PNP，单;
| 型号： | NSVT1418LT1G |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，160V，-1A，低饱和压 PNP，单 晶体管 |
| 文件： | 总8页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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3
Bipolar Transistor -160 V,
-1 A, Low VCE(sat), PNP
Single
1
2
SOT−23
CASE 318−08
NSVT1418L
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching.
Suitable for automotive applications. AEC−Q101 qualified and
PPAP capable.
ELECTRICAL CONNECTION
3
Collector
Features
1
Base
• Large Current Capacitance
• Low Collector to Emitter Saturation Voltage
• High Speed Switching
2
Emitter
• High Allowable Power Dissipation
• AEC−Q101 Qualified and PPAP Capable
• Pb−Free, Halogen Free and RoHS Compliant
• Ultra Small Package Facilitates Miniaturization in End Products
MARKING DIAGRAM
CMMM
Typical Applications
• High Side Switch
• Lighting, Infotainment
CMM = Specific Device Code
M
= Single Digit Date Code
ABSOLUTE MAXIMUM RATINGS at T = 25°C
A
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
−180
−160
−6
Unit
V
V
CBO
V
CEO
V
EBO
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
V
V
I
C
−1
A
Collector Current (Pulse)
Collector Dissipation (Note 1)
Junction Temperature
I
−2
A
CP
P
0.42
W
_C
_C
C
Tj
Tstg
150
Storage Temperature Range
−55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on ceramic substrate. (250 mm x 0.8 mm)
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
July, 2022 − Rev. 1
NSVT1418L/D
NSVT1418L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Value
Typ
Min
Max
−0.1
−0.1
400
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
Unit
μA
I
V
V
V
= −120 V, I = 0 A
CBO
CB
EB
CE
E
I
= −4 V, I = 0 A
μA
EBO
C
h
FE1
= −5 V,
= −100 mA
100
90
I
C
h
FE2
V
C
= −5 V,
= −10 mA
CE
I
Gain−Bandwidth Product
f
V
C
= −10 V,
120
11
MHz
pF
V
T
CE
I
= −50 mA
Output Capacitance
Cob
V
CB
= −10 V,
f = 1 MHz
Collector to Emitter Saturation Voltage
V
V
(sat)1
I
C
= −250 mA,
−0.1
−0.08
−0.8
−0.5
−0.13
−1.2
CE
I = −25 mA
B
(sat)2
(sat)
I
C
= −250 mA,
V
CE
I = −50 mA
B
Base to Emitter Saturation Voltage
V
I
C
= −250 mA,
V
BE
I = −25 mA
B
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
V
V
V
I
I
= −10 mA, I = 0 A
−180
−160
−6
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C
E
= −1 mA, R = ∞
C
BE
I = −10 mA,
E
C
I
= 0 A
Turn−On Time
Storage Time
Fall Time
t
See Figure 1
90
1000
70
ns
ns
ns
on
t
stg
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
I
I
B1
B2
PW=20 ms
DC ≤ 1%
OUTPUT
INPUT
R
B
V
R
R
L
+
+
50 W
100 mF 470 mF
V
BE
= 5 V
V
CC
= −100 V
I
C
= 20I = −20I = −300 mA
B1 B2
Figure 1. Switching Time Test Circuit
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2
NSVT1418L
TYPICAL CHARACTERISTICS
−800
−200 mA
−120 mA
−80 mA
−60 mA
−700
−600
−500
−400
−300
−200
−40 mA
−20 mA
−160 mA
T = 25°C
A
−100
IB = 0 mA
0
0
−200
−400
−600
−800
−1000
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (mV)
Figure 2. IC vs. VCE
−1.2
−1.0
−0.8
−0.6
−0.4
1000
V
= −5 V
CE
V
= −5 V
CE
T = 150°C
25°C
−55°C
A
T = −55°C
A
100
25°C
10
1
150°C
−0.2
0
−1
−10
−100
−1000 −2000
−1
−10
−100
−1000 −2000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. VBE vs. IC
Figure 4. hFE vs. IC
−10
−100
−10
−1
I /I = 10
C B
I /I = 5
C
B
−1
T = 25°C
A
T = 25°C
A
−0.1
−0.1
150°C
−55°C
150°C
−55°C
−0.01
−0.01
−1
−10
−100
−1000 −2000
−1
−10
−100
−1000 −2000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. VCE(sat) vs. IC
Figure 6. VCE(sat) vs. IC
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3
NSVT1418L
TYPICAL CHARACTERISTICS
−10
−1
−1.2
I /I = 10
T = 25°C
A
C
B
IC/IB = 20
−1.0
−0.8
−0.6
−0.4
T = −55°C
A
25°C
IC/IB = 10
150°C
IC/IB = 5
−0.1
−0.2
−0.01
0
−1
−1
−10
−100
−1000 −2000
−10
−100
−1000 −2000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. VBE(sat) vs. IC
100
T = 25°C
A
f = 1 MHz
T = 25°C
A
V
CE
= 5 V
100
10
10 V
1
−1
10
−10
−100 −200
5
50
500 1000
V
CB
, COLLECTOR−TO−BASE VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 9. Cob vs. VCB
Figure 10. fT vs. IC
10
1
0.5
0.4
0.3
0.2
500 ms
0.1
1 ms
10 ms
100 ms
DC
T = 25°C
A
0.01
Single Pulse
0.1
0
Mounted on ceramic
board 250 mm x 0.8 mm
Mounted on ceramic
board 250 mm x 0.8 mm
2
2
0.001
0
50
100
150
0.01
0.1
1
10
100
1000
T , AMBIENT TEMPERATURE (°C)
A
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 11. Power Derating
Figure 12. Safe Operating Area
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4
NSVT1418L
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing) †
NSVT1418LT1G
CMM
SOT−23
(Pb−Free / Halogen Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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