NSVT30010MXV6T1G [ONSEMI]
Bipolar Transistor, Dual, PNP;
| 型号： | NSVT30010MXV6T1G |
| 厂家： | 
ONSEMI |
| 描述： | Bipolar Transistor, Dual, PNP 小信号双极晶体管 |
| 文件： | 总5页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST30010MXV6T1G
Dual Matched General
Purpose Transistor
PNP Matched Pair
These transistors are housed in an ultra−small SOT563 package
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
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(3)
(2)
(1)
Q
Features
• Current Gain Matching to 10%
• Base−Emitter Voltage Matched to 2 mV
• Drop−In Replacement for Standard Device
• These are Pb−Free Devices
Q
1
2
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−30
Unit
V
6
V
CEO
V
CBO
V
EBO
1
−30
V
SOT−563
CASE 463A
PLASTIC
−5.0
−100
V
Collector Current − Continuous
I
C
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
UU M G
G
1
UU = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
NST30010MXV6T1G SOT−563 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
January, 2007 − Rev. 0
NST30010MXV6/D
NST30010MXV6T1G
THERMAL CHARACTERISTICS
One Device
Heated
Both Devices
Heated
Characteristic
Parameter
Symbol
Unit
Total Device Dissipation,
Two Devices Heated Total Package
P
D
T = 25°C (Note 1)
357
2.9
429
3.4
500 (250 ea)
4.0
661 (331 ea)
5.3
mW
mW/°C
mW
A
Derate above 25°C (Note 1)
T = 25°C (Note 2)
A
Derate above 25°C (Note 2)
mW/°C
Thermal Resistance
One Heated Device
R
°C/W
°C/W
°C/W
°C/W
°C
q
JA
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
350
291
250
189
Thermal Resistance
Unheated Device Heated by
Heated Device
Y
JA
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
149
88
−
−
Thermal Resistance
Lead Attached to Heated Device
Y
Y
JL
JL
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
128
152
76
85
Thermal Resistance
Heated Device Heating Lead
Attached to Unheated Device
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
224
222
−
−
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
1. PCB with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
2. PCB with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (I = −10 mA)
V
−30
−30
−30
−5.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
Collector−Emitter Breakdown Voltage, (I = −10 mA, V = 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage, (I = −10 mA)
V
V
C
Emitter−Base Breakdown Voltage, (I = −1.0 mA)
E
Collector Cutoff Current (V = −30 V)
I
−
−
−
−
−15
−4.0
nA
mA
CB
CBO
Collector Cutoff Current (V = −30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
−
FE
(I = −10 mA, V = −5.0 V)
270
420
0.9
−
520
1.0
−
800
−
C
CE
(I = −2.0 mA, V = −5.0 V)
C
CE
(I = −2.0 mA, V = −5.0 V) (Note 3)
C
h h
FE(1)/ FE(2)
CE
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
V
V
CE(sat)
−
−
−
−
−0.30
−0.60
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −1.0 mA)
V
BE(sat)
−
−
−0.75
−0.90
−
−
C
B
(I = −100 mA, I = −10 mA)
C
B
Base−Emitter On Voltage
(I = −2.0 mA, V = −5.0 V)
V
V
BE(on)
−0.60
−
−
−
−
1.0
−0.75
−0.82
2.0
C
CE
(I = −10 mA, V = −5.0 V)
C
CE
(I = −2.0 mA, V = −5.0 V) (Note 4)
V V
BE(1) − BE(2)
mV
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product, (I = −10 mA, V = −5 Vdc, f = 100 MHz)
f
100
−
−
−
−
−
MHz
pF
C
CE
T
Output Capacitance, (V = −10 V, f = 1.0 MHz)
C
4.5
10
CB
ob
Noise Figure, (I = −0.2 mA, V = −5 Vdc, R = 2 kW, f = 1 kHz, BW = 200Hz)
NF
−
dB
C
CE
S
3. h
/h
is the ratio of one transistor compared to the other transistor within the same package. The smaller h is used as numerator.
FE(1) FE(2) FE
4. V
− V
is the absolute difference of one transistor compared to the other transistor within the same package.
BE(1)
BE(2)
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2
NST30010MXV6T1G
TYPICAL CHARACTERISTICS
0.25
0.20
4.0
I /I = 10
C
B
I /I = 100
C B
3.5
3.0
2.5
2.0
1.5
1.0
150°C
−55°C
150°C
0.15
0.10
25°C
25°C
0.05
0
0.5
0
−55°C
100
0.1
1.0
10
100
0.1
1.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1400
1.2
1.0
0.8
0.6
0.4
I /I = 10
C
B
1200
1000
800
−55°C
150°C (5.0 V)
25°C
150°C (2.0 V)
25°C (5.0 V)
150°C
600
25°C (2.0 V)
400
−55°C (5.0 V)
0.2
0
−55°C (2.0 V)
200
0
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
3.0
2.5
2.0
1.5
1.0
50 mA
I
C
= 100 mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−55°C
25°C
20 mA
150°C
10 mA
0.5
0
0.1
0
V
CE
= −5.0 V
0.1
1.0
10
100
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region @ 255C
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3
NST30010MXV6T1G
TYPICAL CHARACTERISTICS
14
12
7
6
5
4
C
(pF)
C
(pF)
obo
ibo
10
8
6
3
2
1
0
4
2
0
0
1
2
3
4
5
6
0
5
10
15
20
25
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
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4
NST30010MXV6T1G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
−X−
L
6
5
2
4
3
E
−Y−
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
H
E
MIN
1
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
1.60
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
b 56 PL
C
e
M
0.08 (0.003)
X Y
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
mm
inches
ǒ
Ǔ
SCALE 20:1
0.0197 0.0197
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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NST30010MXV6/D
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