NSVT3904DP6T5G [ONSEMI]
双 NPN 双极晶体管;
| 型号： | NSVT3904DP6T5G |
| 厂家： | 
ONSEMI |
| 描述： | 双 NPN 双极晶体管 小信号双极晶体管 |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST3904DP6T5G
Dual General Purpose
Transistor
The NST3904DP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
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Features
(3)
(2)
(1)
Q
• h , 100−300
FE
• Low V
, ≤ 0.4 V
CE(sat)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This is a Pb−Free Device
Q
1
2
(4)
(5)
(6)
NST3904DP6T5G
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
40
Unit
Vdc
V
CEO
4
5
6
V
CBO
V
EBO
60
Vdc
6.0
Vdc
3
2
1
Collector Current − Continuous
Electrostatic Discharge
I
C
200
mAdc
SOT−963
CASE 527AD
PLASTIC
HBM
MM
ESD
Class
2
B
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation T = 25°C
P
D
240
1.9
mW
mW/°C
A
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
520
°C/W
q
JA
E M G
G
Total Device Dissipation T = 25°C
P
280
2.2
mW
mW/°C
A
D
1
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
446
°C/W
q
JA
E
M
G
= Device Code
= Date Code
= Pb−Free Package
Characteristic (Dual Heated) (Note 3)
Symbol
Max
Unit
Total Device Dissipation T = 25°C
P
350
2.8
mW
mW/°C
A
D
(Note: Microdot may be in either location)
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
357
°C/W
q
JA
ORDERING INFORMATION
Total Device Dissipation T = 25°C
P
420
3.4
mW
mW/°C
A
D
†
Device
Package
Shipping
Derate above 25°C (Note 2)
NST3904DP6T5G
SOT−963 8000/Tape & Reel
(Pb−Free)
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
297
°C/W
q
JA
Junction and Storage Temperature Range
T , T
−55 to
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
2
1. FR−4 @ 100 mm , 1 oz. copper traces, still air.
2. FR−4 @ 500 mm , 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
April, 2008 − Rev. 0
NST3904DP6/D
NST3904DP6T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 4) (I = 1.0 mAdc, I = 0)
V
40
60
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
−
Vdc
E
C
Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc)
I
CEX
50
nAdc
CE
ON CHARACTERISTICS (Note 4)
DC Current Gain
EB
h
FE
−
(I = 0.1 mAdc, V = 1.0 Vdc)
40
70
100
60
30
−
−
300
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
f
T
200
−
−
MHz
pF
C
CE
Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz)
C
obo
4.0
8.0
5.0
CB
E
Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz)
C
−
pF
EB
C
ibo
Noise Figure (V = 5.0 Vdc, I = 100 mAdc, R = 1.0 k W, f = 1.0 kHz)
NF
−
dB
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
(V = 3.0 Vdc, V = −0.5 Vdc)
t
−
−
−
−
35
35
CC
BE
d
ns
ns
Rise Time
(I = 10 mAdc, I = 1.0 mAdc)
t
C
B1
r
Storage Time
(V = 3.0 Vdc, I = 10 mAdc)
t
275
50
CC
C
s
Fall Time
(I = I = 1.0 mAdc)
t
f
B1
B2
4. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
0.28
400
350
I /I = 10
C
B
150°C (5.0 V)
V
= 150°C
CE(sat)
0.23
0.18
0.13
300 150°C (1.0 V)
250
25°C (5.0 V)
200
150
100
25°C (1.0 V)
−55°C
25°C
−55°C (5.0 V)
−55°C (1.0 V)
0.08
0.03
50
0
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
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2
NST3904DP6T5G
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.1
V
1.0
= 2.0 V
I /I = 10
CE
C
B
0.9
−55°C
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
150°C
150°C
0.4
0.3
0.4
0.3
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
8.0
7.5
I
= 100 mA
C
7.0
6.5
6.0
5.5
5.0
4.5
80 mA
C
ib
60 mA
40 mA
20 mA
4.0
3.5
0.2
0
0.0001
0.001
0.01
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, EMITTER BASE VOLTAGE (V)
I , BASE CURRENT (A)
V
eb
b
Figure 5. Saturation Region
Figure 6. Input Capacitance
3.0
2.5
2.0
1.5
C
ob
1.0
0.5
0
5.0
10
15
20
25
30
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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3
NST3904DP6T5G
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE B
NOTES:
C
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
A
B
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
6
5
4
3
MILLIMETERS
INCHES
NOM MAX
H
E
E
DIM MIN
NOM
0.37
0.15
0.12
1.00
MAX
MIN
1 2
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
0.40
0.20
0.17
1.05
0.85
0.004 0.006 0.008
0.003 0.005 0.007
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
e
C
0.80
6X
b
e
0.35 BSC
L
HE
0.05
0.95
0.10
1.00
0.15
1.05
0.002 0.004 0.006
0.037 0.039 0.041
0.08
C
A
B
SOLDERING FOOTPRINT*
0.35
0.35
0.014 0.014
0.90
0.0354
0.20
0.08
0.20
0.08
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NST3904DP6/D
相关型号：
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ONSEMI
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