NSVT1602SHT1G [ONSEMI]
Small Signal Bipolar Transistor;
| 型号： | NSVT1602SHT1G |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Bipolar Transistor 开关 晶体管 |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSVT1602SH
Product Preview
Bipolar Transistor
160 V, 2 A, Low VCE(sat) NPN Single
SOT−89
www.onsemi.com
This device is a bipolar junction transistor featuring high current,
low saturation voltage, and high speed switching.
Suitable for automotive applications. AEC−Q101 qualified and
PPAP capable.
3
2
1
Features
• Complement to NSVT1601SH
• Large Current Capacitance
• Low Collector−to−Emitter Saturation Voltage
• High−Speed Switching
SOT−89
CASE 528AG
ELECTRICAL CONNECTION
• High Allowable Power Dissipation
2
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
Typical Applications
• Load Switch
3
• Gate Driver Buffer
• DC−DC Converters
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATING at T = 25°C
A
Parameter
Collector−to−Base Voltage
Collector−to−Emitter Voltage
Emitter−to−Base Voltage
Collector Current
Symbol
Value
Unit
V
Y W
C E
V
CBO
V
CEO
V
EBO
180
160
V
6
V
Y
W
= Year
= Work Week
I
C
2
A
CE = Specific Device Code
Collector Current (Pulse)
Collector Dissipation
I
4
0.5
A
CP
P
W
W
W
°C
°C
C
C
C
Collector Dissipation (Note 1)
P
1.5
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Collector Dissipation (T = 25°C)
P
3.5
C
Junction Temperature
Storage Temperature
T
175
J
T
−55 to +175
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on ceramic board (250 mm x 0.8 mm).
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
August, 2019 − Rev. P0
NSVT1602SH/D
NSVT1602SH
ELECTRICAL CHARACTERISTICS at T = 25°C
A
Value
Typ
Min
Max
Parameter
Symbol
Conditions
Unit
Collector Cutoff Current
I
VCB = 180 V
IE = 0 A
0.1
mA
CBO
Emitter Cutoff Current
DC Current Gain
I
VEB = 6 V
IC = 0 A
0.1
mA
EBO
h
h
VCE = 5 V
IC = 100 mA
140
130
400
FE1
VCE = 5 V
FE2
IC = 500 mA
Gain−Bandwidth Product
f
VCE = 10 V
IC = 50 mA
120
14
MHz
pF
V
T
Output Capacitance
C
VCB = 10 V
f = 1 MHz
ob
V
V
V
IC = 250 mA
IB = 25 mA
0.04
0.035
0.07
0.8
0.08
0.07
0.14
1.2
Collector−to−Emitter Saturation Voltage
CE(sat)1
CE(sat)2
CE(sat)3
IC = 250 mA
IB = 50 mA
V
IC = 500 mA
IB = 50 mA
V
Base−to−Emitter Saturation Voltage
V
IC = 250 mA
IB = 25 mA
V
BE(sat)
Collector−to−Base Breakdown Voltage
Collector−to−Emitter Breakdown Voltage
Emitter−to−Base Breakdown Voltage
Turn−On Time
V
V
V
IC = 10 mA, IE = 0 A
IC = 1 mA, RBE = ∞
IE = 10 mA, IC = 0 A
See Figure 1
180
160
6
V
V
(BR)CBO
(BR)CEO
(BR)EBO
V
t
on
TBD
TBD
TBD
ns
ns
ns
Storage Time
t
stg
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
100V
IC = 10IB1 = −10IB2 = 500 mA
Figure 1. Switching Time Test Circuit
ESD RATING
Parameter
Symbol
HBM
Value
4000
400
Unit
V
Class
H3
Electrostatic Discharge − Human Body Model
Electrostatic Discharge − Machine Model
MM
V
M4
ORDERING INFORMATION
Device
†
Marking
Package
Shipping (Qty / Packing)
NSVT1602SHT1G
CE
SOT−89
(Pb−Free / Halogen Free)
1,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
www.onsemi.com
2
NSVT1602SH
PACKAGE DIMENSIONS
SOT−89, 3 LEAD
CASE 528AG
ISSUE O
A
H
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS INCLUDES LEAD FINISH.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
5. DIMENSIONS L, L2, D2, AND H ARE MEASURED AT
DATUM PLANE C.
E
6. CENTER LEAD CONTOUR MAY VARY WITHIN THE
REGION DEFINED BY DIMENSION E.
7. DIMENSION D2 IS DEFINED AT ITS WIDEST POINT.
1
2
3
MILLIMETERS
DIM MIN
MAX
1.60
0.47
0.55
0.44
4.60
1.90
2.60
TOP VIEW
A
b
1.40
0.38
0.46
0.40
4.40
1.60
2.40
b1
c
D
D2
E
c
A
e
H
L
1.50 BSC
0.10 C
4.05
0.89
4.25
1.20
C
SIDE VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
e
b1
e
b
L2
PACKAGE
OUTLINE
2.00
1
2
3
L
4.45
1.57
0.86
1
B
D2
BOTTOM VIEW
2X
0.50
0.58
2X
1.50
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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◊
NSVT1602SH/D
相关型号：
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