NTH4L022N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L;
| 型号： | NTH4L022N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L |
| 文件： | 总8页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
22 mohm, 1200ꢀV, M3S,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
30 mꢀ @ 18 V
89 A
D
NTH4L022N120M3S
Features
G
S1: Driver Source
S2: Power Source
• Typ. R
= 22 mꢀ @ V = 18 V
GS
DS(on)
S1
S2
• Ultra Low Gate Charge (Q
= 137 nC)
G(tot)
N−CHANNEL MOSFET
• High Speed Switching with Low Capacitance (C = 146 pF)
oss
• 100% Avalanche Tested
• This Device is Halide Free and RoHS Compliant with Exemption 7a,
Pb−Free 2LI (on Second Level Interconnection)
Typical Applications
D
• Solar Inverters
S2
S1
• Electric Vehicle Charging Stations
• UPS (Uninterruptible Power Supplies)
• Energy Storage Systems
G
TO−247−4L
CASE 340CJ
• SMPS (Switch Mode Power Supplies)
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
1200
−10/+22
−3/+18
V
V
V
Gate−to−Source Voltage
V
GS
H4L022
120M3S
AYWWZZ
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
C
Continuous Drain
Current (Notes 1, 3)
Steady
State
T
I
D
89
348
62
A
W
A
C
Power Dissipation
(Note 1)
P
D
H4L022120M3S = Specific Device Code
Continuous Drain
Current (Notes 1, 3)
Steady
State
T
C
= 100°C
I
D
A
Y
= Assembly Location
= Year
Power Dissipation
(Note 1)
P
174
275
W
A
D
WW = Work Week
ZZ
= Lot Traceability
Pulsed Drain Current
(Note 2)
T
C
= 25°C
I
DM
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
A
J
stg
+175
Device
Package
Shipping
Source Current (Body Diode)
I
S
72
T
C
= 25°C, V = −3 V (Note 1)
NTH4L022N120M3S TO−247−4L
30 Units /
Tube
GS
Single Pulse Drain−to−Source Avalanche
Energy (I = 23.1 A, L = 1 mH) (Note 4)
E
AS
267
270
mJ
°C
L(pk)
Maximum Lead Temperature for Soldering
(1/25″ from case for 10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. The maximium current rating is based on typical R
performance.
AS
DS(on)
4. EAS of 267 mJ is based on starting T = 25°C; L = 1 mH, I = 23.1 A,
J
V
= 100 V, V = 18 V.
GS
DD
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2023 − Rev. 6
NTH4L022N120M3S/D
NTH4L022N120M3S
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.43
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
ꢁ
JC
R
ꢁ
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
−
0.3
V/°C
(BR)DSS
J
(Note 6)
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−
−
−
−
100
1
ꢂ A
ꢂ A
DSS
GS
J
V
= 1200 V
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS
Gate Threshold Voltage
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 20 mA
2.04
−3
−
2.72
−
4.4
+18
30
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
= 18 V, I = 40 A, T = 25°C
22
44
mꢀ
DS(on)
GS
D
J
V
= 18 V, I = 40 A, T = 175°C
−
−
GS
D
J
(Note 6)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 40 A (Note 6)
−
34
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
−
−
−
−
−
−
−
−
3175
146
14
−
−
−
−
−
−
−
−
pF
nC
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
DS
OSS
RSS
GS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
137
9.2
15
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
V
= −3/18 V, V = 800 V,
DS
GS
I
= 40 A
D
Q
GS
GD
Q
34
R
f = 1 MHz
1.5
ꢀ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
−
−
−
−
−
−
−
18
24
−
−
−
−
−
−
−
ns
d(ON)
Rise Time
t
r
Turn−Off Delay Time
t
48
d(OFF)
V
= −3/18 V, V = 800 V,
DS
GS
Fall Time
t
f
13
I
= 40 A, R = 4.5 ꢀ
D
G
Inductive load (Notes 5, 6)
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
490
221
711
ꢂ
J
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
−
−
−
−
−
72
275
−
A
V
SD
Current (Note 1)
V
= −3 V, T = 25°C
GS
C
(Note 6)
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 40 A, T = 25°C
4.5
SD
SD
J
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2
NTH4L022N120M3S
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
−
−
−
−
−
−
22
138
5
−
−
−
−
−
−
ns
nC
ꢂ J
A
RR
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
V
S
= −3/18 V, I = 40 A,
E
I
GS
SD
REC
dI /dt = 1000 A/ꢂ s, V = 800 V
DS
13
13
9
(Note 6)
RRM
T
A
ns
ns
Discharge Time
T
B
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. E /E
result is with body diode
ON OFF
6. Defined by design, not subject to production test.
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3
NTH4L022N120M3S
TYPICAL CHARACTERISTICS
2.0
200
150
100
50
12 V
V
GS
= 20 V to 15 V
1.5
12 V
1.0
0.5
V
GS
= 20 V to 15 V
T
C
= 25°C
T
C
= 25°C
0
0
0
1
2
3
4
5
6
7
8
9
10
0
40
80
I , DRAIN CURRENT (A)
120
160
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
250
200
2.5
I
V
= 40 A
I
D
= 40 A
D
= 18 V
GS
2.0
150
100
50
1.5
1.0
0.5
0
T = 150°C
J
T = 25°C
J
0
−55 −30 −5
20
45
70
95 120 145 170
5
9
13
17
T , JUNCTION TEMPERATURE (°C)
J
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
500
400
300
200
100
80
E
tot
E
on
V
DS
= 10 V
60
E
off
40
T = 25°C
J
T = 175°C
J
R
= 4.5 ꢀ
= 800 V
= 18/−3 V
G
100
0
20
0
V
DD
V
GS
T = −55°C
J
5
10
15
20
25
30
35
40
45
3
6
9
12
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Drain Current
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4
NTH4L022N120M3S
TYPICAL CHARACTERISTICS (CONTINUED)
900
800
700
600
500
400
300
200
700
E
tot
I
V
V
= 20 A
R
= 4.5 ꢀ
= 40 A
= 18/−3 V
D
G
E
tot
= 800 V
600
500
400
300
200
I
D
DD
GS
= 18/−3 V
V
GS
E
on
E
on
E
off
E
off
100
0
100
0
500
600
700
800
900
1000
0
2
4
6
8
10
V
DD
(V)
R , GATE RESISTANCE (ꢀ)
G
Figure 7. Switching Loss vs. Drain Voltage
Figure 8. Switching Loss vs. Gate Resistance
500
400
300
200
300
100
V
GS
= −3 V
E
tot
E
on
T = 25°C
J
I
V
R
= 20 A
D
T = 175°C
J
= 800 V
DD
10
1
T = −55°C
J
= 4.5
ꢀ
G
V
= 18/−3 V
GS
E
off
100
0
25
50
75
100
125
150
175
1
3
5
7
9
TEMPERATURE (°C)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Switching Loss vs. Temperature
Figure 10. Diode Forward Voltage vs. Current
10000
1000
100
18
15
12
9
C
I
D
= 40 A
iss
V
= 800 V
DD
V
DD
= 400 V
C
oss
V
= 600 V
DD
6
C
rss
3
10
1
0
f = 1 MHz
= 0 V
V
GS
−3
0.1
1
10
100
800
0
30
60
90
120
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 11. Gate−to−Source Voltage vs. Total
Figure 12. Capacitance vs. Drain−to−Source
Charge
Voltage
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5
NTH4L022N120M3S
TYPICAL CHARACTERISTICS (CONTINUED)
100
100
80
V
GS
= 18 V
T = 25°C
J
60
40
T = 150°C
J
10
1
20
0
R
= 0.43°C/W
ꢁ
JC
0.001
0.01
0.1
1
25
50
75
100
125
150
175
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 13. Unclamped Inductive Switching
Capability
Figure 14. Maximum Continuous Drain
Current vs. Case Temperature
1000
100000
10000
Single Pulse
R
T
= 0.43°C/W
= 25°C
ꢁ
JC
100
10
1
C
10 ꢂ s
100 ꢂ s
1 ms
1000
100
10 ms
Single Pulse
T = Max Rated
J
R
= 0.43°C/W
ꢁ
JC
T
C
= 25°C
100 ms/DC
0.1
1
0.1
1
10
100
1000 2000
0.00001 0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 15. Safe Operating Area
Figure 16. Single Pulse Maximum Power
Dissipation
1
0.5 Duty Cycle
0.2
0.1
0.1
0.05
0.02
0.01
Notes:
P
0.01
DM
Z
ꢁ
(t) = r(t) x R
ꢁ
JC
JC
Single Pulse
R
= 0.43°C/W
ꢁ
JC
t
Peak T = P
x Z (t) + T
ꢁ
JC C
1
J
DM
t
Duty Cycle, D = t /t
2
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 17. Junction−to−Case Transient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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