NTMFSC010N08M7 [ONSEMI]
N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 61A, 10mΩ;
| 型号： | NTMFSC010N08M7 |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 61A, 10mΩ |
| 文件： | 总8页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, DUAL COOL)
80 V, 10 mW, 61 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
80 V
10 mW @ 10 V
61 A
N−Channel MOSFET
D (5−8)
NTMFSC010N08M7
Features
• DUAL COOL Top Side Cooling PQFN Package
• Max r
= 10 mW at V = 10 V, I = 10 A
GS D
G (4)
DS(on)
• High Performance Technology for Extremely Low r
• 100% UIL Tested
DS(on)
S (1−3)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
20
V
GS
DFN8 5x6
(Dual Cool 56)
CASE 506EG
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
61
A
C
D
q
JC
T
C
38.6
78.1
31.2
12.5
7.9
(Notes 1, 3)
Power Dissipation
T
C
P
W
A
D
MARKING DIAGRAM
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
3GAYWZ
q
JA
T = 100°C
A
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
P
D
3.3
W
A
R
(Notes 1, 2)
q
JA
T = 100°C
A
1.3
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
180
A
A
p
3G
A
Y
W
Z
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+150
Source Current (Body Diode)
I
S
61
A
Single Pulse Drain−to−Source Avalanche
E
AS
640
mJ
Energy (I
= 3.9 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NTMFSC010N08M7
Package
Shipping
DFN8
(Pb−Free)
3000 / Tape
& Reel
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 1 in pad size, 1 oz Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
March, 2023 − Rev. 4
NTMFSC010N08M7/D
NTMFSC010N08M7
°
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
49
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
GS
= 0 V, V = 80 V
T = 25°C
1
mA
DSS
DS
J
I
V
DS
= 0 V, V
=
20 V
100
nA
GSS
GS
V
V
GS
= V I = 120 mA
DS, D
2.5
3.3
−9
4.5
V
mV/°C
mW
S
GS(TH)
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
GS(TH) J
R
V
= 10 V
= 5 V
I
I
= 10 A
= 10 A
7.6
10
40
DS(on)
GS
D
gFS
V
21.5
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
C
V
GS
= 0 V, f = 1 MHz
V = 0 V
DS
2373
2080
286
11
pF
iss
iss
V
DS
= 40 V
2700
430
17
Output Capacitance
C
oss
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
V
GS
= 0.5 V, f = 1MHz
1
2.6
W
g
Threshold Gate Charge
Total Gate Charge
Q
V
= 0 to 2 V
V
V
= 10 V,
= 40 V;
4.3
29.3
11.8
4.3
5.5
26
nC
g(th)
GS
GS
DS
D
Q
V
GS
= 0 to 10 V
38
I
= 10 A
G(TOT)
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Plateau Voltage
Q
Q
V
GS
= 0 to 10 V
gs
gd
V
V
GP
oss
Output Charge
Q
V
DS
= 40 V V = 0 V
nC
,
GS
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
V
GS
= 40 V, I = 10 A,
14
6
ns
ns
ns
ns
d(ON)
DD
D
V
= 10 V, R
= 6 W
GEN
Turn−On Rise Time
t
r
Turn−Off Delay Time
t
27
6
d(OFF)
Turn−Off Fall Time
t
f
DRAIN – SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Voltage
Reverse Recovery Time
Charge Time
V
I
= 10 A, V = 0 V
0.82
41
1.2
50
V
SD
SD
GS
T
RR
V
GS
= 0 V, dI /dt = 100 A/ms,
ns
SD
I
= 10 A
S
t
24.6
16.1
45
a
Discharge Time
t
b
Reverse Recovery Charge
Q
58
nC
RR
4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTMFSC010N08M7
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.6
3.0
38
Unit
R
R
R
R
R
R
R
R
R
R
R
R
R
R
JA
Thermal Resistance, Junction to Case
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
θ
JC
JC
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
81
27
34
16
°C/W
19
(Note 1g)
(Note 1h)
(Note 1i)
26
61
16
(Note 1j)
23
(Note 1k)
(Note 1l)
11
13
6. R
is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by
θ
θ
JA
design while R
is determined by the user’s board design.
_
CA
b) 81°C/W when mounted on
a minimum pad of 2 oz copper.
a) 38°C/W when mounted on
a 1 in2 pad of 2 oz copper.
c) Still air, 20.9⋅10.4⋅12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d) Still air, 20.9⋅10.4⋅12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
e) Still air, 45.2⋅41.4⋅11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper
f) Still air, 45.2⋅41.4⋅11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
g) .200FPM Airflow, No Heat Sink, 1 in2 pad of 2 oz copper
h) .200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i) .200FPM Airflow, 20.9⋅10.4⋅12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j) .200FPM Airflow, 20.9⋅10.4⋅12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k) .200FPM Airflow, 45.2⋅41.4⋅11.7 mm Aavid Thermalloy Part # 10*L41B*11 Heat Sink, 1 in2 pad of 2 oz copper
l) .200FPM Airflow, 45.2⋅41.4⋅11.7 mm Aavid Thermalloy Part # 10*L41B*11 Heat Sink, minimum pad of 2 oz copper
7. Pulse Test: Pulse Width < 300 _s, Duty cycle < 2.0%.
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3
NTMFSC010N08M7
TYPICAL CHARACTERISTICS
150
120
90
150
V
GS
= 10 V
V
DS
= 5 V
9 V
8 V
7 V
120
90
60
60
T = 25°C
J
6 V
5 V
30
0
30
0
T = 150°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
18
16
14
12
9.0
8.5
8.0
T = 25°C
J
T = 25°C
D
J
I
= 10 A
V
GS
= 10 V
10
7.5
7.0
8
6
6
7
8
9
10
0
10 20 30 40 50 60 70
80 90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
10
2.0
T = 150°C
J
V
= 10 V
= 10 A
GS
1.8
1.6
1.4
1.2
1.0
I
D
1
T = 125°C
J
T = 100°C
J
0.1
T = 85°C
J
0.01
0.8
0.6
V
= 0 V
70
GS
0.001
−100
−50
0
50
100
150
200
0
10
20
30
40
50
60
80
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFSC010N08M7
TYPICAL CHARACTERISTICS
10K
1K
10
9
Q
G(TOT)
C
ISS
8
7
6
5
4
3
2
Q
Q
GD
GS
C
OSS
100
C
RSS
10
1
V
I
= 40 V
= 10 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
20
40
60
80
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
1000
100
10
V
GS
= 0 V
t
t
d(off)
1
d(on)
10
1
0.1
t
T = 150°C
r
V
V
= 10 V
= 40 V
= 10 A
J
GS
0.01
DS
t
f
I
D
T = 25°C
T = −55°C
J
J
0.001
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
J(initial)
10 ms
10
100 ms
T
= 125°C
J(initial)
1
0.5 ms
1 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
1
0.1
1
10
100
0.001
0.01
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (mS)
AV
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
NTMFSC010N08M7
TYPICAL CHARACTERISTICS
2
1
50% Duty Cycle
20%
10%
5%
2%
0.1
1%
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Thermal Response
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
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