NTMFSC0D9N04C [ONSEMI]
Power MOSFET, 40V N Channel __A 0.87m Ohm in Dualcool56 package;
| 型号： | NTMFSC0D9N04C |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, 40V N Channel __A 0.87m Ohm in Dualcool56 package |
| 文件： | 总7页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power,
DUAL COOL) N-Channel,
DFN8 5x6
40 V, 0.87 mW, 310 A
NTMFSC0D9N04C
www.onsemi.com
Features
• Advanced Dual−sided Cooled Packaging
• Small Footprint (5x6 mm) for Compact Design
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• Ulra Low R
to Minimize Conduction Losses
DS(on)
40 V
0.87 mW @ 10 V
310 A
• Low Q and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free and are RoHS Compliant
• MSL1 Robust Packaging Design
N−Channel MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Steady
State
T
C
= 25°C
I
D
313
A
Current R
(Note 2)
q
JC
Power Dissipation
(Note 2)
P
166
W
A
D
R
q
JC
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
48.9
q
JA
(Notes 1, 2)
Power Dissipation
P
D
4.1
W
R
(Notes 1, 2)
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
DFN8 5x6
CASE 506EG
Source Current (Body Diode)
I
158
578
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 34 A)
L(pk)
MARKING DIAGRAM
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
410NDC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
410NDC= Specific Device Code
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Junction−to−Case (Bottom)− Steady State
(Note 2)
R
0.9
°C/W
q
JC
Junction−to−Case (Top) − Steady State (Note 2)
R
R
1.4
37
q
JC
JA
Junction−to−Ambient − Steady State (Note 2)
q
2
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2020 − Rev. 1
NTMFSC0D9N04C/D
NTMFSC0D9N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
5
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 40 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = +20 V
nA
GSS
DS
GS
V
V
= V , I = 250 mA
2.5
3.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
CHARGES & CAPACITANCES
Input Capacitance
V
/T
I = 250 mA, ref to 25°C
D
−8.6
mV/°C
mW
GS(TH)
J
R
V
GS
= 10 V
I = 50 A
D
0.69
0.87
DS(on)
C
V
= 0 V, f = 1 MHz, V = 25 V
6100
3400
70
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
GS
= 10 V, V = 32 V; I = 50 A
86
G(TOT)
DS
D
Gate−to−Source Charge
Gate−to−Drain Charge
Q
Q
28
GS
GD
GP
14
Plateau Voltage
V
4.9
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
V
= 10 V, V = 32 V,
54
ns
d(ON)
GS
D
DS
I
= 50 A, R = 2.5 W
G
Rise Time
t
r
160
220
170
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.8
0.65
91
1.2
V
SD
GS
J
I
= TBD A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
V
= 0 V, dI /dt = 100 A/ms,
ns
RR
GS
S
I
S
= 50 A
t
t
42
a
Discharge Time
49
b
Reverse Recovery Charge
Q
159
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTMFSC0D9N04C
TYPICAL CHARACTERISTICS
300
10 V to 6.0 V
280
240
200
160
120
80
V
DS
= 10 V
250
200
150
100
4.8 V
5.2 V
4.4 V
T = 25°C
J
50
0
V
GS
= 4.0 V
40
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.00
0.95
T = 25°C
D
J
T = 25°C
J
I
= 50 A
0.90
0.85
0.80
0.75
0.70
0.65
0.60
V
GS
= 10 V
0.5
0
0.55
0.50
3
4
5
6
7
8
9
10
0
50
100
150
200
250
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.E−03
1.E−04
1.E−05
V
I
= 10 V
= 50 A
GS
1.8
1.6
1.4
1.2
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
1.E−06
1.E−07
1.0
0.8
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFSC0D9N04C
TYPICAL CHARACTERISTICS
1E+4
1E+3
10
9
8
7
C
ISS
C
OSS
6
5
4
3
Q
Q
GD
GS
1E+2
1E+1
C
V
DS
= 20 V
RSS
V
= 0 V
2
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Charge
100
1000
V
GS
= 0 V
t
t
d(off)
f
t
r
t
d(on)
100
10
10
V
= 10 V
= 20 V
= 50 A
T = 150°C
GS
J
V
DS
I
D
T = 125°C
T = 25°C T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 100°C
J(initial)
10 ms
T
= 25°C
J(initial)
10
T
C
= 25°C
Single Pulse
≤ 10 V
0.5 ms
1 ms
V
GS
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE(V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFSC0D9N04C
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
0.001
Single Pulse
0.0001
0.0000001 0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Device
†
Device Marking
410NDC
Package
Shipping
NTMFSC0D9N04C
DFN8 5x6
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFSC0D9N04C
PACKAGE DIMENSIONS
DFN8 5.1x6.15, 1.27P
CASE 506EG
ISSUE B
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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