NTMFSC012N15MC [ONSEMI]
MOSFET - Power, Dualcool N-Channel, PQFN8, 150V, 11.4mΩ, 80A;型号: | NTMFSC012N15MC |
厂家: | ONSEMI |
描述: | MOSFET - Power, Dualcool N-Channel, PQFN8, 150V, 11.4mΩ, 80A |
文件: | 总7页 (文件大小:371K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, DUAL
COOL) N-Channel, PQFN8
150 V, 11.4 mW, 80 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
11.4 mW @ 10 V
14.5 mW @ 8 V
44 A
22 A
150 V
NTMFSC012N15MC
N−CHANNEL MOSFET
Features
• Advanced Dual−sided Cooled Packaging
• Ulra Low R
DS(on)
• MSL1 Robust Packaging Design
Typical Applications
• Primary DC−DC FET
• Synchronous Rectifier
• DC−DC Conversion
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
150
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain Cur- Steady
T
= 25°C
= 100°C
= 25°C
I
80
A
C
D
rent R
(Notes 1, 3)
State
q
JC
T
C
50
Power Dissipation
(Note 1)
T
C
P
147
58
W
A
D
D
R
q
JC
DFN8 5x6.15
CASE 506EG
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
10
q
JA
T = 100°C
A
6
(Notes 1, 2, 3)
MARKING DIAGRAM
Power Dissipation
T = 25°C
A
P
2.7
1
W
R
(Notes 1, 2)
q
JA
T = 100°C
A
3JAYWZ
Pulsed Drain Current
T
= 25°C, t = 10 ms
I
DM
1067
+150
122
161
A
°C
A
C
p
Operating Junction / Storage Temperature Max
Source Current (Body Diode)
T , T
J stg
I
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 35 A)
L(pk)
3J
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
A
Y
W
Z
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
Parameter
Symbol
Value
0.85
1.5
Unit
†
Device
NTMFSC012N15MC
Package
Shipping
Junction−to−Case − Steady State
Junction−to−Case Top − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
PQFN8
(Pb−Free)
3000 / Tape &
Reel
R
q
JT
R
46
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
2
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2023 − Rev. 2
NTMFSC012N15MC/D
NTMFSC012N15MC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
150
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
6.9
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1
mA
DSS
GS
J
V
= 150 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 194 mA
2.5
4.5
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 194 mA, ref to 25°C
D
8
mV/°C
mW
GS(TH)
J
R
V
= 10 V
= 8 V
I
= 44 A
= 22 A
8.9
9.5
0.7
11.4
14.5
DS(on)
GS
D
D
V
I
GS
Gate−Resistance
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 75 V
2490
676
9.0
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= 6 V, V = 75 V, I = 44 A
20.4
32.4
13.9
5.5
nC
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
Q
V
GS
= 10 V, V = 75 V, I = 44 A
DS D
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
GS
GD
GP
V
5.7
V
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
V
= 10 V, V = 75 V,
18.4
3.7
21.3
3
ns
d(ON)
GS
D
DS
I
= 44 A, R = 2.5 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.88
0.76
42.7
559
V
SD
GS
J
I
= 44 A
T = 125°C
J
Reverse Recovery Time
t
V
= 0 V, dI /dt = 1000 A/ms,
ns
RR
GS
S
I
S
= 44 A
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTMFSC012N15MC
TYPICAL CHARACTERISTICS
100
80
72
64
6.0 V
V
GS
= 10 V to 7.5 V
V
DS
= 10 V
90
80
70
60
50
40
30
20
5.8 V
5.6 V
56
48
40
32
24
16
5.4 V
5.2 V
T = 25°C
J
5.0 V
4.8 V
8
0
10
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
11
10
9
20
18
16
14
12
10
T = 25°C
J
T = 25°C
D
J
I
= 44 A
V
= 8 V
GS
V
GS
= 10 V
8
7
6
8
6
5
6
7
8
9
10
20
30
40
50
60
70
80
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
100
90
80
70
60
50
40
30
20
V
= 10 V
= 44 A
GS
I
D
V
= 10 V
GS
V
GS
= 8 V
0.8
0.6
−50 −25
R
= 0.85°C/W
10
0
q
JC
25
50
75
100
125
150
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , CASE TEMPERATURE (°C)
C
Figure 5. On−Resistance Variation with
Figure 6. Maximum Continuous Drain Current
vs. Case Temperature
Temperature
www.onsemi.com
3
NTMFSC012N15MC
TYPICAL CHARACTERISTICS
10,000
1000
100
10
C
C
ISS
9
8
7
6
5
4
3
2
OSS
Q
Q
GD
GS
C
RSS
10
1
V
I
= 75 V
= 44 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
10
30
50
70
90
110
130
150
0
5
10
15
20
25
30
35
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
1000
100
V
V
= 10 V
= 75 V
= 44 A
V
= 0 V
GS
GS
DS
I
D
10
1
t
d(off)
t
d(on)
10
1
t
f
t
r
T = −55°C
J
T = 125°C
J
T = 25°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
T
= 25°C
J(initial)
100 ms
T
= 100°C
J(initial)
10
V
GS
≤ 10 V
Single Pulse
= 25°C
T
C
1 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
100 ms
100
0.1
1
1
10
1E−06 1E−05
1E−04
1E−03
1E−02 1E−01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
NTMFSC012N15MC
TYPICAL CHARACTERISTICS
10
1
0.1
50% Duty Cycle
20%
10%
5%
2%
1%
0.01
0.001
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
©2020 ICPDF网 联系我们和版权申明