NVHL040N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L;
| 型号： | NVHL040N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L |
| 文件： | 总7页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 40 mohm,
1200ꢀV, M1, TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1200 V
56 mꢀ @ 20 V
60 A
N−CHANNEL MOSFET
NVHL040N120SC1
D
Features
• Typ. R
= 40 mꢀ
• Ultra Low Gate Charge (typ. Q
DS(on)
= 106 nC)
G(tot)
• Low Effective Output Capacitance (typ. C = 140 pF)
oss
G
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
S
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC−DC converter for EV/HEV
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G
D
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
S
TO−247−3LD
CASE 340CX
V
DSS
1200
−15/+25
−5/+20
V
V
V
Gate−to−Source Voltage
V
GS
Recommended Opera-
tion Values of Gate−to−
Source Voltage
T
C
< 175°C
V
GSop
MARKING DIAGRAM
Continuous Drain
Current R
Steady
State
T
C
= 25°C
I
D
60
A
ꢁ
JC
Power Dissipation R
P
348
42
W
A
ꢁ
D
JC
JC
$Y&Z&3&K
NVHL040
N120SC1
Continuous Drain
Current R
Steady
State
T
= 100°C
I
D
C
ꢁ
JC
Power Dissipation R
P
D
174
240
W
A
ꢁ
Pulsed Drain Current
(Note 2)
T = 25°C
A
I
DM
Single Pulse Surge Drain T = 25°C, t = 10 ꢂ s,
I
416
A
A
p
DSC
Current Capability
R
= 4.7
ꢀ
G
$Y
= onsemi Logo
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
J
stg
+175
Source Current (Body Diode)
I
S
34
A
NVHL040N120SC1 = Specific Device Code
Single Pulse Drain−to−Source Avalanche
E
AS
613
mJ
Energy (I
= 23 A, L = 1 mH) (Note 3)
L(pk)
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
Package
Shipping
30 Units /
Tube
TO247−3L
NVHL040N120SC1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Note 1)
Junction−to−Ambient (Note 1)
Symbol
Value
0.43
40
Unit
°C/W
°C/W
R
ꢁ
JC
R
ꢁ
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 613 mJ is based on starting T = 25°C; L = 1 mH, I = 35 A,
AS
DD
J
AS
V
= 120 V, V = 20 V.
GS
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2022 − Rev. 2
NVHL040N120SC1/D
NVHL040N120SC1
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 1 mA, referenced to 25_C
−
450
mV/_C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
250
1
ꢂ A
V
GS
V
GS
V
GS
= 0 V, V = 1200 V, T = 25_C
DSS
DS
J
= 0 V, V = 1200 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
= +25/−15 V, V = 0 V
DS
ꢂ
A
GSS
Gate Threshold Voltage
V
R
V
= V , I = 10 mA
1.8
−5
−
2.97
−
4.3
+20
56
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 35 A, T = 25_C
39
67
20
mꢀ
DS(on)
D
J
= 20 V, I = 35 A, T = 175_C
−
100
−
D
J
Forward Transconductance
g
FS
= 20 V, I = 35 A
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
1781
140
12
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
RSS
C
Q
V
= −5/20 V, V = 600 V, I = 47 A
106
16
G(tot)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(th)
Q
34
GS
GD
Q
26
R
f = 1 MHz
2.2
ꢀ
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
18
41
−
−
−
−
−
−
−
ns
d(on)
GS
DS
I
= 47 A, R = 4.7 ꢀ,
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
33
d(off)
t
f
10.4
1003
247
1248
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
ꢂ
J
ON
OFF
TOT
E
E
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V, T = 25_C
−
−
−
−
34
A
A
SD
GS
J
Forward Current
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
I
= −5 V, T = 25_C
240
SDM
GS
J
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
V
V
V
= −5 V, I = 17.5 A, T = 25_C
−
−
−
−
−
−
−
3.8
24
−
−
−
−
−
−
−
V
ns
nC
ꢂ J
A
SD
GS
SD
J
t
= −5/20 V, I = 47 A,
RR
GS
S
SD
dI /dt = 1000 A/ꢂ s
Q
125
8.5
RR
E
REC
RRM
I
10.4
12.4
11.6
t
t
ns
ns
a
Discharge Time
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVHL040N120SC1
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
4.0
V
GS
= 20 V
V
= 10 V
V
= 12 V
GS
GS
3.5
3.0
2.5
2.0
1.5
15 V
19 V
18 V
15 V
16 V
17 V
17 V
16 V
18 V
19 V
12 V
10 V
V
= 20 V
1.0
0.5
GS
10
0
0
2
4
6
8
10
0
10
20
30 40 50 60
70
80 90 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
300
200
1.9
1.7
1.5
1.3
1.1
I
V
= 35 A
I
= 35 A
D
D
= 20 V
GS
100
0
T = 150°C
J
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
9
10 11 12 13 14 15 16 17 18 19 20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
100
80
300
V
GS
= −5 V
V
DS
= 20 V
60
T = 175°C
J
T = 25°C
J
30
40
T = −55°C
J
T = 175°C
J
T = 25°C
J
20
0
T = −55°C
J
3
2
4
6
8
10
12
14
16
18
2
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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3
NVHL040N120SC1
TYPICAL CHARACTERISTICS (continued)
10K
20
I
D
= 47 A
V
DD
= 400 V
C
iss
15
10
5
1K
V
= 800 V
= 600 V
DD
C
oss
V
DD
100
10
1
C
rss
0
f = 1 MHz
= 0 V
V
GS
−5
0
10 20 30 40 50 60 70 80 90 100 110
0.1
1
10
100
800
175
0.1
V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
DS
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
60
50
40
30
20
500
100
V
GS
= 20 V
T = 25°C
J
T = 150°C
J
10
1
10
0
Typical performance based
on characterization data
R
= 0.43°C/W
ꢁ
JC
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t
AV
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
100K
10K
1K
Single Pulse
100
10
R
= 0.43°C/W
ꢁ
JC
T
C
= 25°C
10 ꢂ s
100 ꢂ s
1
1 ms
10 ms
100 ms
Single Pulse
T = Max Rated
100
10
0.1
J
Curve bent to
measured data
R
= 0.43°C/W
ꢁ
JC
T
C
= 25°C
0.01
0.1
1
10
100
1K
5K
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NVHL040N120SC1
TYPICAL CHARACTERISTICS (continued)
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
1%
P
DM
Z
ꢁ
ꢁ
JC
JC
0.01
Single Pulse
R
= 0.43°C/W
ꢁ
JC
t
Peak T = P
x Z
(t) + T
JC C
1
ꢁ
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Thermal Response
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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