NVMFWS1D5N08XT1G [ONSEMI]
Single N-Channel Power MOSFET 80V, 505 A, 1.5 mΩ;
| 型号： | NVMFWS1D5N08XT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 80V, 505 A, 1.5 mΩ |
| 文件： | 总7页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, STD Gate,
SO8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
80 V
1.43 mW @ 10 V
253 A
80 V, 1.43 mW, 253 A
D (5)
NVMFWS1D5N08X
G (4)
Features
Low Q , Soft Recovery Body Diode
RR
S (1,2,3)
N−CHANNEL MOSFET
Low R
to Minimize Conduction Losses
DS(on)
Low Q and Capacitance to Minimize Driver Losses
G
AEC Qualified and PPAP Capable
These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
MARKING
DIAGRAM
Compliant
Applications
D
Synchronous Rectification (SR) in DC−DC and AC−DC
Primary Switch in Isolated DC−DC Converter
Motor Drives
S
S
S
G
D
D
DFNW5
(SO8FL WF)
CASE 507BA
1D5N08
AYWZZ
Automotive 48 V System
D
1D5N08 = Specific Device Code
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
A
Y
= Assembly Location
= Year
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
W
ZZ
= Work Week
= Lot Traceability
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain Current
(Note 1)
T
= 25C
= 100C
= 25C
= 25C,
I
253
A
C
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
T
C
179
Power Dissipation (Note 1)
Pulsed Drain Current
T
C
P
194
W
A
D
T
C
I
1071
1071
DM
t = 100 ms
p
Pulsed Source Current
(Body Diode)
I
SM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
C
J
stg
Source Current (Body Diode)
I
303
225
A
S
Single Pulse Avalanche Energy (I = 67 A)
(Note 3)
E
AS
mJ
PK
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown.
They are not constants and are only valid for the particular conditions noted.
2. Actual continuous current will be limited by thermal & electromechanical
application board design.
3. E of 225 mJ is based on started T = 25C, I = 67 A, V = 64 V,
AS
GS
J
AS
DD
V
= 10 V, 100% avalanche tested
Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
April, 2023 − Rev. 0
NTMFWS1D5N08X/D
NVMFWS1D5N08X
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.77
39
Unit
Thermal Resistance, Junction−to−Case
R
C/W
q
JC
Thermal Resistance, Junction−to−Ambient (Notes 4, 5)
R
q
JA
2
4. Surface−mounted on FR4 board using a 1 in , 1 oz. Cu pad.
5. R
is determined by the user’s board design.
q
JA
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
I
D
= 1 mA, Referenced to 25C
17.8
mV/C
(BR)DSS
DT
J
Zero Gate Voltage Drain Current
I
V
DS
= 80 V, T = 25C
1
mA
DSS
J
V
= 80 V, T = 125C
250
100
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 50 A
1.24
1.43
3.6
mW
V
DS(on)
GS
D
V
V
GS
V
GS
= V , I = 330 mA
2.4
GS(TH)
DS
D
Gate Threshold Voltage Temperature
Coefficient
DV
/
= V , I = 330 mA
−7.32
mV/C
GS(TH)
DS
D
DT
J
Forward Transconductance
g
FS
V
DS
= 5 V, I = 50 A
176
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Charge
C
5880
1690
25
pF
ISS
C
OSS
C
RSS
Q
OSS
V
= 0 V, V = 40 V, f = 1 MHz
DS
GS
121
51
nC
Total Gate Charge
Q
Q
V
= 6 V, V = 40 V; I = 50 A
GS DD D
G(TOT)
G(TOT)
Total Gate Charge
83
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Gate Resistance
Q
18
G(TH)
Q
27
V
GS
= 10 V, V = 40 V; I = 50 A
DD D
GS
GD
GP
Q
V
13
4.6
0.6
V
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
24
10
45
9
ns
d(ON)
Resistive Load,
t
r
V
= 0/10 V, V = 64 V,
GS
D
DD
Turn−Off Delay Time
Fall Time
t
d(OFF)
I
= 50 A, R = 2.5 W
G
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 50 A, T = 25C
0.81
0.66
36
1.2
V
SD
GS
S
J
V
GS
= 0 V, I = 50 A, T = 125C
S J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
19
a
V
GS
= 0 V, I = 50 A,
S
dI/dt = 1000 A/ms, V = 64 V
Discharge Time
DD
18
b
Reverse Recovery Charge
Q
290
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFWS1D5N08X
TYPICAL CHARACTERISTICS
800
700
600
500
400
300
200
100
0
800
T
VDS=5V
J=25°C
700
600
500
T
J=−55°C
T
J=25°C
400
T
J=175°C
VGS=3V
300
200
100
0
V
GS=4V
V
GS=5V
VGS=6V
VGS=7V
V
GS=8V
VGS=9V
=10V
V
GS
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
6
7
8
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6.5
6
2.5
2
T
J=25°C
ID=50A
T
J=25°C
T
J=175°C
5.5
5
4.5
4
1.5
1
3.5
3
2.5
2
0.5
0
V
GS=10V
1.5
1
V
GS=6V
5
6
7
8
9
10
0
20
40
60
80 100 120 140 160 180 200
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
2.2
2
1e+06
100000
10000
1000
100
I
VGS=0V
D =50A
VGS=10V
1.8
1.6
1.4
1.2
1
T
J=25°C
0.8
0.6
0.4
T
J=85°C
10
T
J=125°C
T
J=150°C
T
J=175°C
1
−75 −50 −25
0
25
50
75 100 125 150 175
10
20
30
40
50
60
70
80
T
VDS, Drain to Source Voltage (V)
J, Junction Temperature (°C)
Figure 5. Normalized On−Resistance vs.
Figure 6. Drain Leakage Current vs. Drain
Voltage
Junction Temperature
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3
NVMFWS1D5N08X
TYPICAL CHARACTERISTICS
10000
1000
100
10
ID=50A
8
6
4
2
0
VGS=0V
T
J=25°C
f=1MHz
V
DD=16V
DD=48V
DD=40V
CISS
COSS
CRSS
V
V
10
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
90 100
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
10
10000
1000
100
VGS=0V
VGS=10V
VDS=64V
ID=50A
10
1
0.1
1
0.01
0.001
0.0001
td(on)
td(off)
tr
T
J=175°C
T
J=25°C
t
f
T
J=−55°C
0.1
1
10
G, Gate Resistance (W)
50
0
0.2
0.4
0.6
0.8
1
1.2
R
VSD, Body Diode Forward Voltage (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Characteristics
T
J=25°C
1000
100
10
T
J=100°C
Limited by RDS(ON)
100
T
J=125°C
R
= 0.77C/W
q
JC
TC=25°C
Single Pulse
10
pulseDuration=1us
pulseDuration=10us
pulseDuration=100us
pulseDuration=1ms
1
pulseDuration=10ms
pulseDuration=100ms/DC
1
0.1
0.1
1
10
100
1e−03 1e−02 1e−01
1e+00
1e+01
1e+02 1e+03
VDS, Drain to Source Voltage (V)
tAV ,TIME IN AVALANCHE (ms)
Figure 11. Safe Operating Area (SOA)
Figure 12. Avalanche Current vs. Pulse Time
(UIS)
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4
NVMFWS1D5N08X
TYPICAL CHARACTERISTICS
300
250
200
150
100
50
1.2
1.1
1
ID=330uA
0.9
0.8
0.7
0.6
0
25
50
75
100
125
150
175
−75 −50 −25
0
25
50
75 100 125 150 175
T
T
J, Junction Temperature (°C)
C, Case Temperature (°C)
Figure 13. Gate Threshold Voltage vs.
Junction Temperature
Figure 14. Maximum Current vs. Case
Temperature
1
D=0 is Single Pulse
0.1
0.01
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
JC(t)=0.77C/W Max
TJM=PDMxZJC(t)+TC
Z
P
DM
t
1
Duty Cycle,D=t1/t
2
t
2
0.001
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
1e+01
1e+02
t, Rectangular Pulse Duration (sec)
Figure 15. Transient Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS1D5N08XT1G
1D5N08
DFNW5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFWS1D5N08X
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
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6
NVMFWS1D5N08X
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