NXH450N65L4Q2F2S1G [ONSEMI]
Power Integrated Module (PIM), I-Type NPC 650 V, 450 A IGBT, 650 V, 250 A Diode, 175degC Module Operating Junction Temperature;
| 型号： | NXH450N65L4Q2F2S1G |
| 厂家： | 
ONSEMI |
| 描述： | Power Integrated Module (PIM), I-Type NPC 650 V, 450 A IGBT, 650 V, 250 A Diode, 175degC Module Operating Junction Temperature PC 双极性晶体管 |
| 文件： | 总18页 (文件大小：2650K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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3-Level NPC Inverter
Module
NXH450N65L4Q2F2S1G
The NXH450N65L4Q2F2S1G is a power module containing a
I−type neutral point clamped three−level inverter. The integrated field
stop trench IGBTs and FRDs provide lower conduction losses and
switching losses, enabling designers to achieve high efficiency and
superior reliability.
PIM40, 107.2x47
CASE 180BE
MARKING DIAGRAM
Features
• Neutral Point Clamped Three−Level Inverter Module
• 650 V Field Stop 4 IGBTs
• Low Inductive Layout
• Solderable Pins
NXH450N65L4Q2F2S1G
ATYYWW
NXH450N65L4Q2F2S1G = Specific Device Code
G
AT
YYWW
= Pb−Free Package
= Assembly & Test Site Code
= Year and Work Week Code
• Thermistor
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies Systems
PIN ASSIGNMENT
ORDERING INFORMATION
See detailed ordering and shipping information on page 16 of
this data sheet.
Figure 1. Schematic Diagram
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
NXH450N65L4Q2F2S1G/D
February, 2023 − Rev. 3
NXH450N65L4Q2F2S1G
MAXIMUM RATINGS (Note 1)
Symbol
Rating
Value
Unit
OUTER IGBT (Q1−1, Q1−2, Q4−1, Q4−2)
V
Collector−Emitter Voltage
Gate−Emitter Voltage
650
V
V
CES
V
20
30
GE
Positive Transient Gate−Emitter Voltage (t
= 5 s, D < 0.10)
pulse
I
Continuous Collector Current @ T = 80°C (T = 175°C)
167
501
365
175
A
A
C
c
J
I
Pulsed Collector Current (T = 175°C)
J
Cpulse
P
Maximum Power Dissipation (T = 175°C)
W
°C
tot
J
T
Maximum Operating Junction Temperature
JMAX
INNER IGBT (Q2, Q3)
V
Collector−Emitter Voltage
650
V
V
CES
V
Gate−Emitter Voltage
Positive Transient Gate−Emitter Voltage (t
20
30
GE
= 5 s, D < 0.10)
pulse
I
Continuous Collector Current @ T = 80°C (T = 175°C)
280
840
633
175
A
A
C
c
J
I
Pulsed Collector Current (T = 175°C)
J
Cpulse
P
Maximum Power Dissipation (T = 175°C)
W
°C
tot
J
T
Maximum Operating Junction Temperature
JMAX
NEUTRAL POINT DIODE (D5, D6)
Peak Repetitive Reverse Voltage
Continuous Forward Current @ T = 80°C (T = 175°C)
V
650
211
633
500
175
V
A
RRM
I
F
c
J
I
Repetitive Peak Forward Current (T = 175°C)
A
FRM
J
P
tot
Maximum Power Dissipation (T = 175°C)
W
°C
J
T
JMAX
Maximum Operating Junction Temperature
INVERSE DIODES (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
Continuous Forward Current @ T = 80°C (T = 175°C)
V
650
93
V
A
RRM
I
F
c
J
I
Repetitive Peak Forward Current (t = 1 ms)
279
231
175
A
FRM
p
P
Maximum Power Dissipation (T = 175°C)
W
°C
tot
J
T
JMAX
Maximum Operating Junction Temperature
THERMAL PROPERTIES
Storage Temperature Range
INSULATION PROPERTIES
T
stg
−40 to 150
°C
V
is
Isolation Test Voltage, t = 1 s, 50 Hz
Creepage Distance
4000
12.7
V
rms
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES
Symbol
Rating
Module Operating Junction Temperature
Min
Max
Unit
T
J
−40
T
JMAX
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH450N65L4Q2F2S1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OUTER IGBT (Q1−1, Q1−2, Q4−1, Q4−2)
I
Collector−Emitter Cutoff Current
V
V
V
V
V
= 0 V, V = 650 V
–
–
–
3.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.49
1.68
4.1
300
2.2
–
mA
CES
GE
GE
GE
GE
GE
CE
V
V
Collector−Emitter Saturation Voltage
= 15 V, I = 225 A, T = 25°C
V
CE(sat)
C
J
= 15 V, I = 225 A, T = 175°C
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−On Delay Time
Rise Time
= V , I = 2.75 mA
5.2
600
–
V
GE(TH)
CE
C
I
= 20 V, V = 0 V
−
nA
ns
GES
CE
t
T = 25°C
162
49
d(on)
J
V
V
= 400 V, I = 200 A
C
CE
GE
t
r
–
= −5 V to +15 V, R = 10 W
G
t
Turn−off Delay Time
Fall Time
642
52
–
d(off)
t
f
–
E
E
Turn−On Switching Loss per Pulse
Turn Off Switching Loss per Pulse
Turn−On Delay Time
Rise Time
4.4
–
mJ
ns
on
off
4.8
–
t
t
150
57
–
T = 125°C
d(on)
J
V
V
= 400 V, I = 200 A
C
CE
GE
t
r
–
= −5 V to +15 V, R = 10 W
G
Turn−off Delay Time
Fall Time
692
70
–
d(off)
t
f
–
E
E
Turn−on Switching Loss per Pulse
Turn Off Switching Loss per Pulse
Input Capacitance
6.2
–
mJ
pF
on
off
5.1
–
C
V
V
= 20 V, V = 0 V, f = 10 kHz
14630
230
64
–
ies
oes
CE
GE
C
Output Capacitance
–
C
Reverse Transfer Capacitance
Total Gate Charge
–
res
Q
= 480 V, I = 225 A, V = 0~ +15 V
452
0.45
0.26
–
nC
g
CE
C
GE
R
R
Thermal Resistance − Chip−to−Heatsink Thermal grease, Thickness = 2 Mil 2%,
–
°C/W
°C/W
thJH
thJC
A = 2.8 W/mK
Thermal Resistance − Chip−to−Case
–
NEUTRAL POINT DIODE (D5, D6)
V
Diode Forward Voltage
I = 250 A, T = 25°C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.45
1.87
37
3.1
–
V
F
F
J
I = 250 A, T = 175°C
F
J
t
rr
Reverse Recovery Time
T = 25°C
–
ns
mC
J
CE
V
V
= 400 V, I = 200 A
C
Q
rr
RRM
Reverse Recovery Charge
1.6
–
= −5 V to +15 V, R = 10 W
GE
G
I
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
69
–
A
di/dt
3225
0.31
71
–
A/ms
mJ
E
rr
–
t
rr
Reverse Recovery Time
T = 125°C
–
ns
J
CE
V
V
= 400 V, I = 200 A
C
Q
rr
RRM
Reverse Recovery Charge
6
–
mC
= −5 V to +15 V, R = 10 W
GE
G
I
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
138
2987
1.28
0.32
0.19
–
A
di/dt
–
A/ms
mJ
E
rr
–
R
Thermal Resistance − Chip−to−Heatsink Thermal grease, Thickness = 2 Mil 2%,
–
°C/W
°C/W
thJH
thJC
A = 2.8 W/mK
R
Thermal Resistance − Chip−to−Case
–
INNER IGBT (Q2, Q3)
I
Collector−Emitter Cutoff Current
V
GE
V
GE
V
GE
V
GE
V
GE
= 0 V, V = 650 V
–
–
–
300
2.2
–
mA
CES
CE
V
Collector−Emitter Saturation Voltage
= 15 V, I = 375 A, T = 25°C
1.49
1.73
4.1
−
V
CE(sat)
C
J
= 15 V, I = 375 A, T = 175°C
–
C
J
V
Gate−Emitter Threshold Voltage
= V , I = 3.75 mA
3.1
–
5.2
1000
V
GE(TH)
CE
C
I
Gate Leakage Current
= 20 V, V = 0 V
nA
GES
CE
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3
NXH450N65L4Q2F2S1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
INNER IGBT (Q2, Q3)
t
Turn−On Delay Time
T = 25°C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
188
67
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
d(on)
J
V
V
= 400 V, I = 200 A
C
CE
GE
t
r
Rise Time
= −5 V to +15 V, R = 15 W
G
t
Turn−Off Delay Time
Fall Time
749
48
d(off)
t
f
E
on
E
off
Turn−On Switching Loss per Pulse
Turn Off Switching Loss per Pulse
Turn−On Delay Time
Rise Time
4.8
mJ
ns
6.5
t
t
T = 125°C
175
76
d(on)
J
CE
V
V
= 400 V, I = 200 A
C
t
r
= −5 V to +15 V, R = 15 W
GE
G
Turn−Off Delay Time
Fall Time
814
50
d(off)
t
f
E
on
E
off
Turn−On Switching Loss per Pulse
Turn Off Switching Loss per Pulse
Input Capacitance
5.68
6.59
24383
383
105
753
0.31
0.15
mJ
pF
C
V
V
= 20 V, V = 0 V, f = 10 kHz
GE
ies
oes
CE
C
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
res
Q
= 480 V, I = 375 A, V = 0~ +15 V
nC
g
CE
C
GE
R
R
Thermal Resistance − Chip−to−Heatsink Thermal grease, Thickness = 2 Mil 2%,
°C/W
°C/W
thJH
thJC
A = 2.8 W/mK
Thermal Resistance − Chip−to−Case
INVERSE DIODES (D1, D2, D3, D4)
V
Diode Forward Voltage
I = 100 A, T = 25°C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.25
1.69
24.4
0.49
32
3.1
–
V
F
F
J
I = 100 A, T = 175°C
F
J
t
rr
Reverse Recovery Time
T = 25°C
–
ns
mC
J
CE
V
V
= 400 V, I = 200 A
C
Q
rr
RRM
Reverse Recovery Charge
–
= −5 V to +15 V, R = 15 W
GE
G
I
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
A
di/dt
2365
0.096
104
–
A/ms
mJ
E
rr
–
t
rr
Reverse Recovery Time
T = 125°C
–
ns
J
CE
V
V
= 400 V, I = 200 A
C
Q
rr
RRM
Reverse Recovery Charge
2.54
58
–
mC
= −5 V to +15 V, R = 15 W
GE
G
I
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
A
di/dt
2116
0.608
0.57
0.41
–
A/ms
mJ
E
rr
–
R
Thermal Resistance − Chip−to−Heatsink Thermal grease, Thickness = 2 Mil 2%,
–
°C/W
°C/W
thJH
thJC
A = 2.8 W/mK
R
Thermal Resistance − Chip−to−Case
–
THERMISTOR PROPERTIES
R
Nominal Resistance
Nominal Resistance
Deviation of R25
Power Dissipation
Power Dissipation Constant
B−value
T = 25°C
–
–
22
1486
–
–
–
5
–
–
–
–
kQ
Q
25
R
T = 100°C
100
R/R
−5
–
%
P
200
2
mW
mW/K
K
D
–
B (25/50), tolerance 3%
B (25/100), tolerance 3%
–
3950
3998
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − IGBT Q1−1, Q1−2, Q4−1, Q4−2 AND DIODE D1, D4
Figure 2. Typical Output Characteristics
Figure 4. Typical Output Characteristics
Figure 3. Typical Transfer Characteristics
Figure 5. Typical Transfer Characteristics
Figure 6. Transient Thermal Impedance (Q1−1, Q1−2, Q4−1, Q4−2)
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5
NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − IGBT Q1−1, Q1−2, Q4−1, Q4−2 AND DIODE D1, D4 (CONTINUED)
Figure 7. Transient Thermal Impedance (D1, D4)
Figure 8. FBSOA (Q1−1, Q1−2, Q4−1, Q4−2)
Figure 9. RBSOA (Q1, Q4)
V
C
= 480 V
CE
I
= 225 A
V
GE
= 0~ +15 V
Figure 10. Gate Voltage vs. Gate Charge
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − IGBT Q2, Q3 AND DIODE D2, D3
Figure 11. Typical Output Characteristics
Figure 12. Typical Output Characteristics
Figure 13. Typical Transfer Characteristics
Figure 14. Typical Transfer Characteristics
Figure 15. Transient Thermal Impedance (Q2, Q3)
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − IGBT Q2, Q3 AND DIODE D2, D3 (CONTINUED)
Figure 16. Transient Thermal Impedance (D2, D3)
Figure 17. FBSOA (Q2, Q3)
Figure 18. RBSOA (Q2, Q3)
V
C
= 480 V
CE
I
= 375 A
V
GE
= 0~ +15 V
Figure 19. Gate Voltage vs. Gate Charge
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − DIODE D5, D6
Figure 20. Diode Forward Characteristics
Figure 21. Transient Thermal Impedance (D5, D6)
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − Q1/Q4 IGBT COMUNATES D5/D6 DIODE
Figure 22. Typical Switching Loss Eon vs. IC
Figure 23. Typical Switching Loss Eoff vs. IC
Figure 26. Typical Switching Loss Eon vs. RG
Figure 27. Typical Switching Loss Eoff vs. RG
Figure 24. Typical Switching Time Tdon vs. IC
Figure 25. Typical Switching Time Tdoff vs. IC
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − Q1/Q4 IGBT COMUNATES D5/D6 DIODE (CONTINUED)
Figure 28. Typical Switching Time Tdon vs. RG
Figure 29. Typical Switching Time Tdoff vs. RG
Figure 30. Typical Reverse Recovery Energy vs. IC
Figure 31. Typical Reverse Recovery Energy vs. RG
Figure 32. Typical Reverse Recovery Time vs. IC
Figure 33. Typical Reverse Recovery Time vs. RG
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − Q1/Q4 IGBT COMUNATES D5/D6 DIODE (CONTINUED)
Figure 34. Typical Reverse Recovery Charge vs. IC
Figure 35. Typical Reverse Recovery Charge vs. RG
Figure 36. Typical Reverse Recovery Current vs. IC
Figure 39. Typical Reverse Recovery Current vs. RG
Figure 37. Typical di/dt vs. IC
Figure 38. Typical di/dt vs. RG
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12
NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − Q2/Q3 IGBT COMUNATES D1/D4 DIODE
Figure 40. Typical Switching Loss Eon vs. IC
Figure 45. Typical Switching Loss Eoff vs. IC
Figure 41. Typical Switching Loss Eon vs. RG
Figure 42. Typical Switching Loss Eoff vs. RG
Figure 43. Typical Turn−On Switching Time vs. IC
Figure 44. Typical Turn−Off Switching Time vs. IC
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − Q2/Q3 IGBT COMUNATES D1/D4 DIODE (CONTINUED)
Figure 46. Typical Turn−On Switching Time vs. RG
Figure 47. Typical Turn−Off Switching Time vs. RG
Figure 48. Typical Reverse Recovery Energy Loss
vs. IC
Figure 51. Typical Reverse Recovery Energy Loss
vs. RG
Figure 49. Typical Reverse Recovery Time vs. IC
Figure 50. Typical Reverse Recovery Charge vs. IC
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NXH450N65L4Q2F2S1G
TYPICAL CHARACTERISTICS − Q2/Q3 IGBT COMUNATES D1/D4 DIODE (CONTINUED)
Figure 52. Typical Reverse Recovery Current vs. IC
Figure 53. Typical di/dt Current Slope vs. IC
Figure 54. Typical Reverse Recovery Time vs. RG
Figure 55. Typical Reverse Recovery Charge vs. RG
Figure 56. Typical Reverse Recovery Peak Current
vs. RG
Figure 57. Typical di/dt vs. RG
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NXH450N65L4Q2F2S1G
ORDERING INFORMATION
Orderable Part Number
Marking
NXH450N65L4Q2F2S1G
Package
Shipping
NXH450N65L4Q2F2S1G
PIM40, Q2PACK
(Pb−Free and Halide−Free)
12 Units / Blister Tray
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM40, 107.2x47
CASE 180BE
ISSUE C
DATE 27 JUL 2022
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON06409H
PIM40, 107.2x47
PAGE 1 OF 1
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