SMMBT3906LT1 [ONSEMI]
200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN;
| 型号： | SMMBT3906LT1 |
| 厂家： | 
ONSEMI |
| 描述： | 200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT3906LT1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
•ꢀPb-Free Packages are Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
BASE
Collectorꢁ-ꢁEmitter Voltage
V
CEO
-40
Vdc
Collectorꢁ-ꢁBase Voltage
V
-40
-5.0
-200
-800
Vdc
Vdc
CBO
2
EMITTER
Emitterꢁ-ꢁBase Voltage
V
EBO
Collector Current - Continuous
Collector Current - Peak (Note 3)
THERMAL CHARACTERISTICS
I
C
mAdc
mAdc
I
CM
3
1
Characteristic
Symbol
Max
Unit
2
Total Device Dissipation FR-ꢁ5 Board
(Note 1) @ T = 25°C
P
D
225
1.8
mW
mW/°C
A
SOT-23 (TO-236)
CASE 318
STYLE 6
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
R
q
JA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @ T = 25°C
P
D
300
2.4
mW
mW/°C
A
MARKING DIAGRAM
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
2A MꢀG
T , T
J
-ꢁ55 to +150
stg
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1
2A = Specific Device Code
= Date Code*
M
1. FR-ꢁ5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
3. Reference SOA curve.
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT3906LT1
SOT-23 3,000 / Tape & Reel
MMBT3906LT1G SOT-23 3,000 / Tape & Reel
(Pb-Free)
MMBT3906LT3
SOT-23 10,000 / Tape & Reel
MMBT3906LT3G SOT-23 10,000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©ꢀ Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 6
1
Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collectorꢁ-ꢁEmitter Breakdown Voltage
(I = -1.0 mAdc, I = 0)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
-40
-40
-5.0
-
-
-
C
B
Collectorꢁ-ꢁBase Breakdown Voltage
(I = -10 mAdc, I = 0)
V
V
C
E
Emitterꢁ-ꢁBase Breakdown Voltage
(I = -10 mAdc, I = 0)
Vdc
-
E
C
Base Cutoff Current
I
BL
nAdc
nAdc
(V = -30 Vdc, V = -3.0 Vdc)
CE EB
-50
-50
Collector Cutoff Current
I
CEX
(V = -30 Vdc, V = -3.0 Vdc)
CE EB
-
ON CHARACTERISTICS (Note 4)
DC Current Gain
H
FE
-
(I = -0.1 mAdc, V = -1.0 Vdc)
60
80
100
60
-
-
300
-
C
CE
(I = -1.0 mAdc, V = -1.0 Vdc)
C
CE
(I = -10 mAdc, V = -1.0 Vdc)
C
CE
(I = -50 mAdc, V = -1.0 Vdc)
C
CE
(I = -100 mAdc, V = -1.0 Vdc)
30
-
C
CE
Collectorꢁ-ꢁEmitter Saturation Voltage
(I = -10 mAdc, I = -1.0 mAdc)
(I = -50 mAdc, I = -5.0 mAdc)
V
Vdc
Vdc
CE(sat)
-
-
-0.25
-0.4
C
B
C
B
Baseꢁ-ꢁEmitter Saturation Voltage
(I = -10 mAdc, I = -1.0 mAdc)
(I = -50 mAdc, I = -5.0 mAdc)
V
BE(sat)
-0.65
-
-0.85
-0.95
C
B
C
B
SMALL-ꢀSIGNAL CHARACTERISTICS
Currentꢁ-ꢁGain - Bandwidth Product
f
MHz
pF
T
(I = -10 mAdc, V = -20 Vdc, f = 100 MHz)
C CE
250
-
-
Output Capacitance
C
obo
(V = -5.0 Vdc, I = 0, f = 1.0 MHz)
CB E
4.5
10
Input Capacitance
C
ibo
pF
(V = -0.5 Vdc, I = 0, f = 1.0 MHz)
EB C
-
Input Impedance
h
kW
ie
re
fe
(I = -1.0 mAdc, V = -10 Vdc, f = 1.0 kHz)
C CE
2.0
0.1
100
3.0
-
12
-ꢁ4
Voltage Feedback Ratio
h
h
X 10
-
(I = -1.0 mAdc, V = -10 Vdc, f = 1.0 kHz)
C CE
10
Smallꢁ-ꢁSignal Current Gain
(I = -1.0 mAdc, V = -10 Vdc, f = 1.0 kHz)
C CE
400
60
Output Admittance
h
oe
mmhos
dB
(I = -1.0 mAdc, V = -10 Vdc, f = 1.0 kHz)
C CE
Noise Figure
NF
(I = -100 mAdc, V = -5.0 Vdc, R = 1.0 kW, f = 1.0 kHz)
C S
4.0
CE
SWITCHING CHARACTERISTICS
Delay Time
t
t
-
-
-
-
35
35
d
(V = -3.0 Vdc, V = ꢁ0.5 Vdc,
BE
CC
= -10 mAdc, I = -1.0 mAdc)
B1
ns
ns
I
C
Rise Time
t
r
Storage Time
225
75
s
(V = -3.0 Vdc, I = -10 mAdc,
CC
C
= I = -1.0 mAdc)
I
B1
B2
Fall Time
t
f
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
2
MMBT3906LT1
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
C
S
< 4 pF*
C < 4 pF*
S
1N916
10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
CC
I /I = 10
= 40 V
3000
2000
7.0
C
B
C
5.0
obo
1000
700
500
C
ibo
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
50
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I = 10
C B
V
= 40 V
CC
300
200
300
200
I = I
B1 B2
I /I = 20
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
15 V
30
20
30
20
I /I = 10
C B
40 V
10
10
7
2.0 V
7
5
t @ V = 0 V
OB
d
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Fall Time
Figure 5. Turnꢀ-ꢀOn Time
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3
MMBT3906LT1
TYPICAL AUDIO SMALL-ꢀSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = -ꢁ5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
6
I
C
= 50 mA
4
I
= 50 mA
C
SOURCE RESISTANCE = 2.0 k
= 100 mA
I
= 100 mA
C
2
I
C
0
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 7.
Figure 8.
h PARAMETERS
(VCE = -ꢁ10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
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4
MMBT3906LT1
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
+25°C
-ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
I , COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
1.0
0.8
0.6
1.0
0.5
T = 25°C
V
@ I /I = 10
J
BE(sat) C B
+25°C TO +125°C
-ꢀ55°C TO +25°C
q
FOR V
CE(sat)
VC
V
BE
@ V = 1.0 V
CE
0
-ꢀ0.5
-ꢀ1.0
+25°C TO +125°C
-ꢀ55°C TO +25°C
0.4
0.2
0
V
@ I /I = 10
B
CE(sat)
C
q
FOR V
BE(sat)
VB
-ꢀ1.5
-ꢀ2.0
1.0
2.0 5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
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5
MMBT3906LT1
1
1 ms
10 ms
1 s
100 ms
Thermal Limit
0.1
0.01
Single Pulse Test
@ T = 25°C
A
0.001
0.01
0.1
1
10
100
V
CE
(Vdc)
Figure 17. Safe Operating Area
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6
MMBT3906LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
H
E
E
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW
STANDARD 318-08.
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
E
2.10
2.40
2.64
0.083
0.094
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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MMBT3906LT1/D
相关型号：
SMMBT5401LT1
500mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
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