SMMBT4401LT1G [ONSEMI]
Switching Transistor NPN Silicon;
| 型号： | SMMBT4401LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Switching Transistor NPN Silicon PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT4401L, SMMBT4401L
Switching Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR
3
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
1
BASE
MAXIMUM RATINGS
2
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
40
Unit
Vdc
EMITTER
V
CEO
V
CBO
V
EBO
60
Vdc
3
6.0
Vdc
SOT−23 (TO−236)
CASE 318
STYLE 6
Collector Current − Continuous
Collector Current − Peak
I
C
600
900
mAdc
mAdc
1
2
I
CM
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
(Note 1) @T = 25°C
225
1.8
mW
mW/°C
A
2X M G
Derate above 25°C
G
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
1
Total Device Dissipation Alumina
P
D
2X = Specific Device Code
Substrate (Note 2) @T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−55 to +150
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
ORDERING INFORMATION
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
†
Device
Package
Shipping
MMBT4401LT1G
SMMBT4401LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBT4401LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
October, 2011 − Rev. 10
MMBT4401LT1/D
MMBT4401L, SMMBT4401L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Base Cutoff Current
(I = 1.0 mAdc, I = 0)
V
40
60
6.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
(I = 0.1 mAdc, I = 0)
V
V
C
E
(I = 0.1 mAdc, I = 0)
−
Vdc
E
C
(V = 35 Vdc, V = 0.4 Vdc)
I
0.1
0.1
mAdc
mAdc
CE
EB
BEV
Collector Cutoff Current
(V = 35 Vdc, V = 0.4 Vdc)
I
−
CE
EB
CEX
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
(I = 0.1 mAdc, V = 1.0 Vdc)
20
40
−
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
80
−
C
CE
(I = 150 mAdc, V = 1.0 Vdc)
100
40
300
−
C
CE
(I = 500 mAdc, V = 2.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I = 150 mAdc, I = 15 mAdc)
−
−
0.4
C
B
(I = 500 mAdc, I = 50 mAdc)
0.75
C
B
V
BE(sat)
(I = 150 mAdc, I = 15 mAdc)
0.75
−
0.95
1.2
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
(I = 20 mAdc, V = 10 Vdc, f = 100 MHz)
f
T
250
−
−
MHz
pF
C
CE
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
C
cb
C
eb
6.5
30
CB
E
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
−
pF
EB
C
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
1.0
0.1
40
1.0
15
kW
C
CE
ie
re
fe
−4
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
h
8.0
500
30
X 10
−
C
CE
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
oe
mmhos
C
CE
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
15
20
d
(V = 30 Vdc, V = 2.0 Vdc,
CC
EB
ns
ns
I
= 150 mAdc, I = 15 mAdc)
C
B1
Rise Time
t
r
Storage Time
t
225
30
s
(V = 30 Vdc, I = 150 mAdc,
CC
C
I
B1
= I = 15 mAdc)
B2
Fall Time
t
f
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200 W
+ꢀ30 V
1.0 to 100 ms,
1.0 to 100 ms,
200 W
+16 V
DUTY CYCLE ≈ 2.0%
+16 V
0
DUTY CYCLE ≈ 2.0%
0
1.0 kW
-14 V
1.0 kW
C * < 10 pF
S
-ꢀ2.0 V
C * < 10 pF
S
< 20 ns
< 2.0 ns
-ꢀ4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
MMBT4401L, SMMBT4401L
TRANSIENT CHARACTERISTICS
25°C
100°C
10
7.0
V
= 30 V
CC
I /I = 10
5.0
C
B
3.0
2.0
Q
T
1.0
0.7
0.5
0.3
0.2
Q
A
0.1
10
20
30
50 70 100
200 300
500
I , COLLECTOR CURRENT (mA)
C
Figure 3. Charge Data
100
70
100
I /I = 10
C B
V
= 30 V
70
50
CC
I /I = 10
t
r
C
B
50
t @ V = 30 V
r
CC
t @ V = 10 V
30
20
30
20
t
f
r
CC
t @ V = 2.0 V
d
EB
t @ V = 0
d
EB
10
7.0
5.0
10
7.0
5.0
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200
300
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. Turn−On Time
Figure 5. Rise and Fall Times
300
200
100
70
t ′ = t - 1/8 t
f
s
s
V
I
= 30 V
CC
I
= I
B1 B2
I /I = 10 to 20
= I
B1 B2
C
B
50
I /I = 20
C B
30
20
100
70
I /I = 10
C B
10
50
7.0
5.0
30
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200 300
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Storage Time
Figure 7. Fall Time
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3
MMBT4401L, SMMBT4401L
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
V
CE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
8.0
6.0
10
I
C
I
C
I
C
I
C
= 1.0 mA, R = 150 W
S
f = 1.0 kHz
= 500 mA, R = 200 W
S
R
= OPTIMUM
S
RS = SOURCE
8.0
6.0
= 100 mA, R = 2.0 kW
S
I
C
I
C
I
C
I
C
= 50 mA
= 50 mA, R = 4.0 kW
S
RS = RESISTANCE
= 100 mA
= 500 mA
= 1.0 mA
4.0
4.0
2.0
0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
50 100 200
500 1.0ꢁk 2.0ꢁk 5.0ꢁk 10ꢁk 20ꢁk 50ꢁk 100ꢁk
R , SOURCE RESISTANCE (OHMS)
S
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
= 10 Vdc, f = 1.0 kHz, T = 25°C
V
CE
A
This group of graphs illustrates the relationship between h and other “h” parameters for this series of transistors. To obtain
fe
these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
50ꢁk
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
20ꢁk
10ꢁk
5.0ꢁk
2.0ꢁk
1.0ꢁk
500
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
Figure 10. Input Impedance
100
10
7.0
5.0
50
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
5.0
2.0
1.0
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Voltage Feedback Ratio
Figure 12. Output Admittance
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4
MMBT4401L, SMMBT4401L
STATIC CHARACTERISTICS
500
450
400
350
300
250
200
150
100
V
CE
V
CE
V
CE
= 5.0 V
= 2.0 V
= 1.0 V
T = 150°C
J
25°C
-ꢀ55°C
50
0
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
Figure 13. DC Current Gain
1.2
1.0
0.8
0.6
0.4
0.2
0
100 mA
I
= 1.0 mA
500 mA
10 mA
300 mA
C
0.001
0.01
0.1
1
10
100
I , BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
0.35
0.30
0.25
0.20
+ꢀ0.5
0
I /I = 10
C B
q
for V
CE(sat)
VC
-ꢀ0.5
150°C
-ꢀ1.0
0.15
0.10
25°C
-ꢀ1.5
-ꢀ2.0
-ꢀ2.5
-55°C
q
for V
BE
0.05
0
VB
0.0001
0.001
0.01
0.1
1
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (mA)
C
Figure 15. Collector−Emitter Saturation
Figure 16. Temperature Coefficients
Voltage vs. Collector Current
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5
MMBT4401L, SMMBT4401L
STATIC CHARACTERISTICS
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.0
I /I = 10
C
B
V
CE
= 2.0 V
0.9
0.8
0.7
0.6
0.5
−55°C
−55°C
25°C
25°C
150°C
0.4
0.3
0.4
0.3
150°C
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 17. Base−Emitter Saturation Voltage vs.
Figure 18. Base−Emitter Turn On Voltage vs.
Collector Current
Collector Current
21
8.5
7.5
6.5
5.5
4.5
3.5
19
17
15
13
11
9
2.5
1.5
0
1
2
3
4
5
6
0
5
10 15 20 25 30 35 40 45 50
V , COLLECTOR BASE VOLTAGE (V)
cb
V
eb
, EMITTER BASE VOLTAGE (V)
Figure 19. Input Capacitance vs. Emitter Base
Voltage
Figure 20. Output Capacitance vs. Collector
Base Voltage
1000
100
10
1
V
= 1.0 V
CE
10 msec
T = 25°C
A
1 sec
0.1
0.01
0.001
1
10
100
0.1
1
10
100
1000
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 21. Safe Operating Area
Figure 22. Current−Gain−Bandwidth Product
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6
MMBT4401L, SMMBT4401L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
D
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
A1
b
c
D
E
e
L
L1
1
2
b
0.25
e
q
H
q
2.10
0°
2.40
−−−
2.64
10°
0.083
0°
0.094
−−−
0.104
10°
A
E
L
STYLE 6:
PIN 1. BASE
A1
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT4401LT1/D
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