SMMBT4403L [ONSEMI]
Switching Transistor;
| 型号： | SMMBT4403L |
| 厂家： | 
ONSEMI |
| 描述： | Switching Transistor |
| 文件： | 总7页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT4403L, SMMBT4403L
Switching Transistor
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
www.onsemi.com
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
V
V
−40
Vdc
CEO
CBO
EBO
Collector−Base Voltage
−40
−5.0
−600
−900
Vdc
Vdc
3
Emitter−Base Voltage
SOT−23 (TO−236)
CASE 318
STYLE 6
Collector Current − Continuous
Collector Current − Peak
I
C
mAdc
mAdc
1
I
2
CM
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
(Note 1) @T = 25°C
225
1.8
mW
mW/°C
A
2T M G
Derate above 25°C
G
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
1
q
JA
Total Device Dissipation Alumina
P
2T
M
G
= Specific Device Code*
= Date Code*
= Pb−Free Package
D
Substrate, (Note 2) @T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
T , T
J
−55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT4403LT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
SMMBT4403LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
MMBT4403LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 13
MMBT4403LT1/D
MMBT4403L, SMMBT4403L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Base Cutoff Current
(I = −1.0 mAdc, I = 0)
V
−40
−40
−5.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
(I = −0.1 mAdc, I = 0)
V
V
C
E
(I = −0.1 mAdc, I = 0)
−
Vdc
E
C
(V = −35 Vdc, V = −0.4 Vdc)
I
−0.1
−0.1
mAdc
mAdc
CE
EB
BEV
Collector Cutoff Current
(V = −35 Vdc, V = −0.4 Vdc)
I
−
CE
EB
CEX
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = −0.1 mAdc, V = −1.0 Vdc)
30
60
−
−
−
C
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
CE
(I = −10 mAdc, V = −1.0 Vdc)
100
100
20
−
300
−
C
CE
(Note 3)
(Note 3)
(I = −150 mAdc, V = −2.0 Vdc)
C
CE
(I = −500 mAdc, V = −2.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
Base−Emitter Saturation Voltage (Note 3)
SMALL−SIGNAL CHARACTERISTICS
V
Vdc
Vdc
CE(sat)
(I = −150 mAdc, I = −15 mAdc)
−
−
−0.4
−0.75
C
B
(I = −500 mAdc, I = −50 mAdc)
C
B
V
BE(sat)
(I = −150 mAdc, I = −15 mAdc)
−0.75
−
−0.95
−1.3
C
B
(I = −500 mAdc, I = −50 mAdc)
C
B
Current−Gain − Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
(I = −20 mAdc, V = −10 Vdc, f = 100 MHz)
f
T
200
−
−
MHz
pF
C
CE
(V = −10 Vdc, I = 0, f = 1.0 MHz)
C
cb
C
eb
8.5
30
CB
E
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
−
pF
BE
C
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
h
1.5
0.1
60
1.0
15
kW
C
CE
ie
re
fe
−4
Voltage Feedback Ratio
Small−Signal Current Gain
Output Admittance
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
h
h
8.0
500
100
X 10
−
C
CE
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
CE
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
h
oe
mMhos
C
CE
SWITCHING CHARACTERISTICS
Delay Time
t
−
−
−
−
15
20
d
(V = −30 Vdc, V = −2.0 Vdc,
CC
EB
ns
ns
I
C
= −150 mAdc, I = −15 mAdc)
B1
Rise Time
t
r
Storage Time
t
225
30
s
(V = −30 Vdc, I = −150 mAdc,
CC
C
I
B1
= I = −15 mAdc)
B2
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
-ꢀ30 V
-ꢀ30 V
200 W
200 W
< 20 ns
< 2 ns
+2 V
0
+14 V
0
1.0 kW
1.0 kW
C * < 10 p
S
C * < 10 pF
S
-16 V
-ꢀ16 V
1.0 to 100 ms,
DUTY CYCLE = 2%
10 to 100 ms,
DUTY CYCLE = 2%
+ꢀ4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
MMBT4403L, SMMBT4403L
TRANSIENT CHARACTERISTICS
25°C
100°C
10
7.0
5.0
100
70
I /I = 10
C B
V
CC
I /I = 10
= 30 V
C B
50
3.0
2.0
t @ V = 30 V
r
CC
t @ V = 10 V
30
20
r
t @ V
CC
= 2 V
= 0
d BE(off)
t @ V
BE(off)
1.0
0.7
d
0.5
Q
T
0.3
0.2
10
7.0
5.0
Q
A
0.1
10
20
30
50 70 100
200 300
500
200 300
10
20
30
50 70 100
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. Charge Data
Figure 4. Turn−On Time
100
200
70
50
I /I = 10
C B
V
CC
I /I = 10
= 30 V
C B
100
70
30
20
I /I = 20
C B
50
I = I
B1 B2
t ′ = t - 1/8 t
s
s
f
10
7.0
5.0
30
20
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200
300
500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Storage Time
Figure 5. Rise Time
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
8
f = 1 kHz
8
I
I
I
I
= 1.0 mA, R = 430 W
S
C
C
C
C
6
4
2
0
6
I
C
= 50 mA
= 500 mA, R = 560 W
S
100 mA
500 mA
1.0 mA
= 50 mA, R = 2.7 kW
S
= 100 mA, R = 1.6 kW
S
4
2
R
= OPTIMUM SOURCE RESISTANCE
S
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1ꢁk 2ꢁk
5ꢁk 10ꢁk 20ꢁk
50ꢁk
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (OHMS)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
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3
MMBT4403L, SMMBT4403L
h PARAMETERS
V
CE
= 10 Vdc, f = 1.0 kHz, T = 25°C
A
This group of graphs illustrates the relationship between h and other “h” parameters for this series of transistors. To obtain
fe
these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
100ꢁk
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
50ꢁk
20ꢁk
10ꢁk
5ꢁk
2ꢁk
1ꢁk
500
200
100
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mAdc)
C
Figure 9. Input Impedance
20
10
500
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
100
50
2.0
1.0
0.5
20
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
10
5.0
0.2
0.1
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 10. Voltage Feedback Ratio
Figure 11. Output Admittance
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4
MMBT4403L, SMMBT4403L
STATIC CHARACTERISTICS
450
400
350
300
250
200
150
V
CE
V
CE
V
CE
= 5.0 V
= 2.0 V
= 1.0 V
T = 150°C
J
25°C
-ꢀ55°C
100
50
0.001
0.01
0.1
1
0.0001
I , COLLECTOR CURRENT (A)
C
Figure 12. DC Current Gain
1.2
1.0
0.8
I
C
= 1.0 mA
10 mA
100 mA
500 mA
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
I , BASE CURRENT (mA)
b
Figure 13. Collector Saturation Region
0.35
0.30
0.25
0.20
0.5
0
I /I = 10
C B
q
for V
CE(sat)
VC
0.5
150°C
1.0
25°C
0.15
0.10
1.5
2.0
2.5
-55°C
q
for V
BE
VS
0.05
0
0.0001
0.001
0.01
0.1
1
0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200 500
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (mA)
C
Figure 14. Collector−Emitter Saturation
Voltage vs. Collector Current
Figure 15. Temperature Coefficients
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5
MMBT4403L, SMMBT4403L
STATIC CHARACTERISTICS
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.0
I /I = 10
V
CE
= 2.0 V
C
B
0.9
0.8
0.7
0.6
0.5
0.4
−55°C
−55°C
25°C
25°C
150°C
150°C
0.4
0.3
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 16. Base−Emitter Saturation Voltage vs.
Collector Current
Figure 17. Base−Emitter Turn On Voltage vs.
Collector Current
40
15
13
11
9
35
30
25
20
7
15
10
5
3
0
1
2
3
4
5
6
0
5
10
V , COLLECTOR BASE VOLTAGE (V)
cb
15
20
25
30
35
40
V
eb
, EMITTER BASE VOLTAGE (V)
Figure 18. Input Capacitance vs. Emitter Base
Voltage
Figure 19. Output Capacitance vs. Collector
Base Voltage
1000
100
10
1000
100
100 ms
1 ms
V
= 1.0 V
10 ms
CE
1 s
T = 25°C
A
Thermal Limit
10
1
0.1
1
10
100
0.1
1
10
100
1000
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 20. Safe Operating Area
Figure 21. Current−Gain−Bandwidth Product
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6
MMBT4403L, SMMBT4403L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
STYLE 6:
SEE VIEW C
SIDE VIEW
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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◊
MMBT4403LT1/D
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