SMMBT3906WT1G [ONSEMI]
General Purpose Transistors;
| 型号： | SMMBT3906WT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors 放大器 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT3904WT1G, NPN,
SMMBT3904WT1G, NPN,
MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
General Purpose
Transistors
www.onsemi.com
NPN and PNP Silicon
COLLECTOR
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
1
BASE
Features
2
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
EMITTER
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
SC−70 (SOT−323)
CASE 419
STYLE 3
Compliant
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MARKING DIAGRAM
Collector−Emitter Voltage
V
V
V
Vdc
CEO
CBO
EBO
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
40
−40
xx M G
Collector−Base Voltage
Vdc
Vdc
G
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
60
−40
1
xx = AM for MMBT3904WT1,
SMMBT3904WT
Emitter−Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
6.0
−5.0
= 2A for MMBT3906WT1,
SMMBT3906WT1
= Date Code*
Collector Current − Continuous
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
I
C
mAdc
M
G
200
−200
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
*Date Code orientation may vary depending up-
on manufacturing location.
Symbol
Max
Unit
Total Device Dissipation (Note 1)
P
D
150
mW
@T = 25°C
A
ORDERING INFORMATION
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
833
°C/W
°C
q
JA
†
Device
Package
Shipping
T , T
J
−55 to +150
stg
MMBT3904WT1G,
SMMBT3904WT1G
SC−70/
SOT−323
(Pb−Free)
3000 / Tape &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
MMBT3906WT1G,
SMMBT3906WT1G
SC−70/
SOT−323
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2015 − Rev. 9
MMBT3904WT1/D
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
40
−40
−
−
C
B
(I = −1.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
Vdc
Vdc
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
60
−40
−
−
C
E
(I = −10 mAdc, I = 0)
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
6.0
−5.0
−
−
E
C
(I = −10 mAdc, I = 0)
E
C
Base Cutoff Current
I
nAdc
nAdc
BL
(V = 30 Vdc, V = 3.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
50
−50
CE
EB
(V = −30 Vdc, V = −3.0 Vdc)
CE
EB
Collector Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
CEX
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
50
−50
CE
EB
(V = −30 Vdc, V = −3.0 Vdc)
CE
EB
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 1.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
40
70
100
60
30
−
−
300
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
(I = 100 mAdc, V = 1.0 Vdc)
C
CE
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
−
−
C
CE
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
(I = −10 mAdc, V = −1.0 Vdc)
100
60
300
−
C
CE
(I = −50 mAdc, V = −1.0 Vdc)
C
CE
(I = −100 mAdc, V = −1.0 Vdc)
30
−
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = −10 mAdc, I = −1.0 mAdc)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
0.65
−
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = −10 mAdc, I = −1.0 mAdc)
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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2
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Symbol
Min
Max
Unit
f
T
MHz
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
300
250
−
−
C
CE
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
pF
pF
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
4.0
4.5
CB
E
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
8.0
10.0
EB
C
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
Input Impedance
h
k W
ie
re
fe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
1.0
2.0
10
12
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
−4
Voltage Feedback Ratio
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
X 10
−
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
0.5
0.1
8.0
10
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Small−Signal Current Gain
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
100
100
400
400
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Output Admittance
h
mmhos
dB
oe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
1.0
3.0
40
60
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
NF
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 k W, f = 1.0 kHz)
CE
C
S
MMBT3904WT1, SMMBT3904WT1
(V = −5.0 Vdc, I = −100 mAdc, R = 1.0 k W, f = 1.0 kHz)
−
−
5.0
4.0
CE
C
S
MMBT3906WT1, SMMBT3906WT1
SWITCHING CHARACTERISTICS
Characteristic
Condition
Symbol
Min
Max
Unit
(V = 3.0 Vdc, V = −0.5 Vdc)
Delay Time
Rise Time
Storage Time
Fall Time
t
35
35
ns
CC
BE
d
MMBT3904WT1, SMMBT3904WT1
−
−
(V = −3.0 Vdc, V = 0.5 Vdc)
CC
BE
MMBT3906WT1, SMMBT3906WT1
(I = 10 mAdc, I = 1.0 mAdc)
t
35
35
C
B1
r
MMBT3904WT1, SMMBT3904WT1
−
−
(I = −10 mAdc, I = −1.0 mAdc)
C
B1
MMBT3906WT1, SMMBT3906WT1
(V = 3.0 Vdc, I = 10 mAdc)
t
200
225
ns
CC
C
s
MMBT3904WT1, SMMBT3904WT1
−
−
(V = −3.0 Vdc, I = −10 mAdc)
CC
C
MMBT3906WT1, SMMBT3906WT1
(I = I = 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
t
−
−
50
75
B1
B2
f
(I = I = −1.0 mAdc)
B1
B2
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 ms
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-ꢀ0.5 V
C < 4 pF*
S
C < 4 pF*
S
1N916
-ꢀ9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
500
500
I /I = 10
C B
V
CC
I /I = 10
= 40 V
300
200
300
200
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
30
20
30
20
40 V
15 V
10
7
MMBT3904WT1
10
7
MMBT3904WT1
2.0 V
t @ V = 0 V
d OB
5
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. Turn−On Time
Figure 4. Rise Time
500
500
1
t′ = t - / t
8 f
s
s
V
I
= 40 V
CC
= I
300
200
300
200
I
= I
B1 B2
I /I = 20
C B
I /I = 10
C B
B1 B2
I /I = 20
C B
100
70
100
70
I /I = 20
C B
50
50
I /I = 10
C B
I /I = 10
C B
30
20
30
20
10
7
10
7
MMBT3904WT1
MMBT3904WT1
5
5
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Storage Time
Figure 6. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
CE
A
12
10
8
14
12
SOURCE RESISTANCE = 200 W
I = 1.0 mA
f = 1.0 kHz
I = 1.0 mA
C
C
I = 0.5 mA
C
10
8
SOURCE RESISTANCE = 200 W
I = 0.5 mA
I = 50 mA
C
C
6
I = 100 mA
C
SOURCE RESISTANCE = 1.0 k
I = 50 mA
6
4
2
0
C
4
2
0
SOURCE RESISTANCE = 500 W
I = 100 mA
C
MMBT3904WT1
20
40
MMBT3904WT1
0.1 0.2
0.4
1.0 2.0 4.0
10
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
S
Figure 7. Noise Figure
Figure 8. Noise Figure
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
300
200
MMBT3904WT1
MMBT3904WT1
50
20
10
5
100
70
50
2
1
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
MMBT3904WT1
MMBT3904WT1
5.0
3.0
2.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
1000
100
10
V
= 1 V
CE
T = 150°C
J
25°C
-ꢀ55°C
MMBT3904WT1
1000
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
1.0
0.8
0.6
0.4
T = 25°C
J
MMBT3904WT1
I = 1.0 mA
C
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
0.9
1.4
I /I = 10
C
B
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I /I = 10
C
B
1.2
1.0
0.8
0.6
150°C
25°C
−55°C
25°C
−55°C
150°C
0.4
0.2
0.1
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1.4
V
CE
= 1 V
1.2
1.0
0.8
0.6
−55°C
25°C
150°C
0.4
0.2
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
Figure 17. Base Emitter Voltage vs. Collector
Current
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
T = 25°C
J
T = 125°C
J
1.0
0.5
10
MMBT3904WT1
MMBT3904WT1
7.0
5.0
+25°C TO +125°C
-ꢀ55°C TO +25°C
q
FOR V
CE(sat)
VC
0
C
ibo
-ꢀ0.5
-ꢀ1.0
3.0
2.0
-ꢀ55°C TO +25°C
+25°C TO +125°C
C
obo
q
FOR V
BE(sat)
VB
-ꢀ1.5
-ꢀ2.0
1.0
0
20
40
60
80 100 120 140 160 180 200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 18. Temperature Coefficients
Figure 19. Capacitance
1000
1
100 mS 10 mS
1 S
V
= 1 V
CE
T = 25°C
A
1 mS
0.1
100
Thermal Limit
0.01
10
0.001
0.1
1
10
100
1000
0.1
1
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
I , COLLECTOR CURRENT (mA)
V
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
Figure 21. Safe Operating Area
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
3 V
3 V
< 1 ns
+ꢀ9.1 V
275
275
< 1 ns
10 k
10 k
0
C < 4 pF*
S
C < 4 pF*
S
1N916
+10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 22. Delay and Rise Time
Equivalent Test Circuit
Figure 23. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
500
500
MMBT3906WT1
I /I = 10
C B
V
= 40 V
CC
300
200
300
200
MMBT3906WT1
I = I
B1 B2
I /I = 20
C B
100
100
70
70
50
t @ V = 3.0 V
r CC
50
I /I = 10
C B
30
20
15 V
30
20
40 V
2.0 V
10
7
10
7
t @ V = 0 V
d OB
5
5
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0
5.0 7.0
10
20
30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 24. Turn−On Time
Figure 25. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
5.0
4.0
3.0
SOURCE RESISTANCE = 200 W
f = 1.0 kHz
I = 1.0 mA
C
I = 1.0 mA
C
10
8.0
6.0
4.0
2.0
0
I = 0.5 mA
C
SOURCE RESISTANCE = 200 W
I = 0.5 mA
C
SOURCE RESISTANCE = 2.0 k
I = 50 mA
C
2.0
1.0
0
I = 50 mA
C
SOURCE RESISTANCE = 2.0 k
I = 100 mA
C
I = 100 mA
C
MMBT3906WT1
10 20
40
MMBT3906WT1
20
40
0.1 0.2 0.4
1.0 2.0 4.0
100
0.1 0.2
0.4
1.0 2.0
4.0
10
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (kW)
S
Figure 26.
Figure 27.
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
100
300
200
70
MMBT3906WT1
MMBT3906WT1
50
30
20
100
70
10
50
30
7.0
5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 28. Current Gain
Figure 29. Output Admittance
20
10
10
7.0
5.0
MMBT3906WT1
MMBT3906WT1
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 30. Input Impedance
Figure 31. Voltage Feedback Ratio
STATIC CHARACTERISTICS
1000
100
10
V
CE
= 1 V
T = 150°C
J
25°C
-ꢀ55°C
MMBT3906WT1
1000
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 32. DC Current Gain
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
1.0
0.8
0.6
0.4
0.2
T = 25°C
J
MMBT3906WT1
I = 1.0 mA
C
10 mA
30 mA
100 mA
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 33. Collector Saturation Region
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
1.4
I /I = 10
C
B
I /I = 10
C
B
1.2
1.0
0.8
0.6
150°C
25°C
−55°C
25°C
−55°C
150°C
0.10
0.4
0.2
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
1.4
V
CE
= 1 V
1.2
1.0
0.8
0.6
−55°C
25°C
150°C
0.4
0.2
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
Figure 36. Base Emitter Voltage vs. Collector
Current
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
T = 25°C
J
T = 125°C
J
10
1.0
0.5
MMBT3906WT1
7.0
5.0
q
FOR V
+25°C TO +125°C
VC
CE(sat)
C
-ꢀ55°C TO +25°C
obo
0
-0.5
-1.0
-1.5
-2.0
C
ibo
MMBT3906WT1
3.0
2.0
+25°C TO +125°C
-ꢀ55°C TO +25°C
q
FOR V
BE(sat)
VS
1.0
0
20
40
60
80 100 120 140 160 180 200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
30 40
I , COLLECTOR CURRENT (mA)
C
REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Temperature Coefficients
Figure 38. Capacitance
1000
1
100 mS 10 mS
V
CE
= 1 V
T = 25°C
A
1 mS
0.1
1 S
100
Thermal Limit
0.01
10
0.001
0.1
1
10
100
1000
0.1
1
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
I , COLLECTOR CURRENT (mA)
V
C
Figure 39. Current Gain Bandwidth Product
vs. Collector Current
Figure 40. Safe Operating Area
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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
e1
L
H
E
0.38
2.10
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MMBT3904WT1/D
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