XP04601 [PANASONIC]
Silicon NPN epitaxial planer transistor; NPN硅外延平面晶体管
| 型号： | XP04601 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer transistor |
| 文件： | 总6页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP04601 (XP4601)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
+0.05
0.12
–0.02
For general amplification
0.2±0.05
6
5
4
3
Features
■
■
Two elements incorporated into one package.
1
2
■
Reduction of the mounting area and assembly cost by one half.
(0.65) (0.65)
1.3±0.1
2.0±0.1
10°
Basic Part Number of Element
2SD0601A(2SD601A) + 2SB0709A(2SB709A)
■
■
Absolute Maximum Ratings (Ta=25˚C)
■
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
4 : Emitter (Tr2)
5 : Base (Tr2)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
60
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
SMini6-G1 Package
50
V
Tr1
7
V
Marking Symbol: 5C
100
mA
mA
V
Internal Connection
ICP
200
VCBO
VCEO
VEBO
IC
–60
Tr1
1
2
3
6
5
4
–50
V
Tr2
–7
V
–100
–200
150
mA
mA
mW
˚C
Tr2
ICP
PT
Tj
150
Overall
Tstg
–55 to +150
˚C
Note) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XP04601
Electrical Characteristics (Ta=25˚C)
Tr1
■
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Symbol
VCBO
Conditions
IC = 10µA, IE = 0
min
60
50
7
typ
max
Unit
V
VCEO
VEBO
ICBO
ICEO
hFE
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC
V
V
0.1
µA
µA
Collector cutoff current
100
Forward current transfer ratio
=
2mA160
460
10mA0.1
Collector to emitter saturation voltage VCE(sat)
IC = 100mA, IB
=
0.3
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
150
3.5
MHz
pF
Collector output capacitance
Cob
■
Tr2
Parameter
Symbol
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
VCE = –10V, IB = 0
min
–60
–50
–7
typ
max
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
V
V
– 0.1
–100
µA
µA
Collector cutoff current
Forward current transfer ratio
VCE = –10V, IC
IC = –100mA, IB
=
–2mA160
460
Collector to emitter saturation voltage VCE(sat)
=
–10mA–
MHz
pF
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
80
Collector output capacitance
Cob
2.7
2
Composite Transistors
XP04601
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
Characteristics charts of Tr1
IC — VCE
IB — VBE
IC — VBE
240
200
160
120
80
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
VCE=10V
Ta=25˚C
VCE=10V
Ta=25˚C
IB=160µA
140µA
120µA
100µA
25˚C
80µA
Ta=75˚C
–25˚C
60µA
40µA
40
20µA
0
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
( )
V
( )
V
( )
V
Base to emitter voltage VBE
Collector to emitter voltage VCE
Base to emitter voltage VBE
IC — IB
VCE(sat) — IC
hFE — IC
240
200
160
120
80
100
600
IC/IB=10
VCE=10V
VCE=10V
Ta=25˚C
30
10
500
400
300
200
100
0
Ta=75˚C
25˚C
3
1
–25˚C
0.3
0.1
25˚C
Ta=75˚C
–25˚C
40
0.03
0.01
0
0
200
400
600
800
)
1000
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
(
)
(
)
Base current IB µA
Collector current IC mA
Collector current IC mA
3
Composite Transistors
XP04601
fT — IE
NV — IC
1200
1000
800
600
400
200
0
240
200
160
120
80
60
VCE=10V
Ta=25˚C
VCE=10V
Ta=25˚C
IB=160µA
50
140µA
40
30
20
10
0
120µA
100µA
25˚C
80µA
Ta=75˚C
–25˚C
60µA
40µA
40
20µA
0
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
( )
V
( )
V
( )
V
Base to emitter voltage VBE
Collector to emitter voltage VCE
Base to emitter voltage VBE
Characteristics charts of Tr2
IC — VCE
IC — IB
IB — VBE
–400
–350
–300
–250
–200
–150
–100
–50
–60
–50
–40
–30
–20
–10
0
–60
–50
–40
–30
–20
–10
0
VCE=–5V
Ta=25˚C
Ta=25˚C
VCE=–5V
Ta=25˚C
IB=–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
0
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
0
–100
–200
–300
–400
)
0
–0.4
–0.8
–1.2
–1.6
(
V
)
(
( )
Base to emitter voltage VBE V
Collector to emitter voltage VCE
Base current IB µA
IC — VBE
VCE(sat) — IC
hFE — IC
–10
600
500
400
300
200
100
0
–240
–200
–160
–120
–80
–40
0
IC/IB=10
VCE=–10V
VCE=–5V
–3
–1
25˚C
–25˚C
Ta=75˚C
Ta=75˚C
25˚C
Ta=75˚C
25˚C
–0.3
–0.1
–25˚C
–25˚C
–0.03
–0.01
–0.003
–0.001
–1
–3
–10 –30 –100 –300 –1000
–1
–3
–10 –30 –100 –300 –1000
0
–0.4
–0.8
–1.2
–1.6
–2.0
(
)
(
)
(
V
)
Collector current IC mA
Collector current IC mA
Base to emitter voltage VBE
4
Composite Transistors
XP04601
fT — IE
Cob — VCB
NF — IE
6
5
4
3
2
1
160
8
7
6
5
4
3
2
1
0
VCB=–10V
f=1MHz
IE=0
Ta=25˚C
VCB=–5V
f=1kHz
Rg=2kΩ
Ta=25˚C
Ta=25˚C
140
120
100
80
60
40
20
0
0
0.01 0.03
0.1 0.3
1
3
10
0.1 0.3
1
3
10
30
100
–1
–2 –3 –5 –10 –20 –30 –50 –100
(
)
(
)
(
V
)
Emitter current IE mA
Emitter current IE mA
Collector to base voltage VCB
NF — IE
h Parameter — IE
h Parameter — VCE
20
18
16
14
12
10
8
VCB=–5V
Rg=50kΩ
Ta=25˚C
300
200
300
200
IE=2mA
f=270Hz
Ta=25˚C
hfe
hfe
100
50
100
50
hoe (µS)
f=100Hz
30
20
30
20
hoe (µS)
1kHz
10
5
10
5
10kHz
6
hie (kΩ)
hre (×10–4
)
4
3
2
3
2
hie (kΩ)
VCE=–5V
f=270Hz
Ta=25˚C
2
hre (×10–4
)
0
1
1
0.1 0.2 0.3 0.5
1
2
3
5
10
0.1 0.2 0.3 0.5
1
2
3
5
10
0.1 0.2 0.3 0.5
1
2
3
5
10
(
)
( )
Collector to emitter voltage VCE V
Emitter current IE mA
(
)
Emitter current IE mA
5
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2001 MAR
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