BD6382EFV [ROHM]
Silicon monolithic integrated circuits; 硅单片集成电路
| 型号： | BD6382EFV |
| 厂家： | 
ROHM |
| 描述： | Silicon monolithic integrated circuits |
| 文件： | 总5页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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STRUCTURE
PRODUCT SERIES
TYPE
Silicon monolithic integrated circuits
Bipolar stepping motor driver
BD6382EFV
FUNCTION
・PWM constant current controllable two H bridge driver
・Power save mode
・Reference voltage output
・Low on resistance DMOS
○Absolute maximum ratings (Ta=25℃)
Item
Supply voltage VCC
Supply voltage VM
Symbol
Limit
Unit
V
VCC
VM
-0.2～+7.0
-0.2～+15.0
1.1※1
V
W
W
Power dissipation
Pd
4.0※2
Input voltage for control pin
RNF maximum voltage
VIN
VRNF
IOUT
Topr
-0.2～(VCC +0.3)
0.5
V
V
Maximum output current
Operating temperature range
Storage temperature range
0.8※3
A/ch
℃
-40～+85
-55～+150
150
Tstg
℃
Junction temperature
※1
Tjmax
℃
70mm×70mm×1.6mm glass epoxy board. Derating in done at 8.8mW/℃ for operating above Ta=25℃
4-layer recommended board. Derating in done at 32.0mW/℃ for operating above Ta=25℃.
Do not exceed Pd, ASO.
※2
※3
○Operating conditions (Ta=-40～+85℃)
Item
Symbol
Min.
3.0
5.5
0
Typ.
3.3
6.0
-
Max.
5.5
Unit
V
Supply voltage VCC
Supply voltage VM
Input voltage for control
Output current (DC)
VCC
VM
13.5
VCC
0.5※4
V
VIN
V
IOUT
-
0.3
A/ch
※4
Do not exceed Pd, ASO.
This product isn’t designed for protection against radioactive rays.
Status of this document
The Japanese version of this document is the formal specification.
A customer may use this translation version only for a reference to help reading the formal version.
If there are any differences in translation version of this document, formal version takes priority.
REV. A
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○
Electrical characteristics (Unless otherwise specified Ta=25℃､VCC=3.3V､VM=6.0V)
Limit
Item
Symbol
Unit
Conditions
Min.
Typ.
Max.
Whole
VCC current at standby
VCC current
ICCST
ICC
IVMST
IVM
-
-
-
-
0
1.6
0
10
3.0
10
μA PS=L
mA PS=H, VLIMX=0.5V
μA PS=L
VM current at standby
VM current
0.08
0.50
mA PS=H, VLIMX=0.5V
Control input (PS, IN1A, IN1B, IN2A, IN2B)
H level input voltage
L level input voltage
H level input current
L level input current
VINH
VINL
IINH
IINL
2.0
0
-
-
3.3
0.8
60
-
V
V
15
-10
30
0
μA VIN =3V
μA VIN =0V
Output (OUT1A, OUT1B, OUT2A, OUT2B)
IOUT = ± 0.3A, VM=6V
Output ON resistance
RON
-
-
1.2
-
1.5
10
Ω
Sum of upper and lower
Output leak current
ILEAK
μA
Current control
RNFX input current
SENSEX input current
VLIMX input current
VLIMX input voltage range
Comparator offset voltage
Noise cancel time
IRNF
ISENSE
IVLIM
VVLIM
VOFS
tn
-40
-2.0
-2.0
0
-20
-0.1
-0.1
-
-
-
μA RNFX=0V
μA SENSEX=0V
μA VLIMX=0V
V
-
0.5
10
1.2
1.03
-10
0.3
0.97
-
mV
0.7
1.00
μs R=39kΩ, C=1000pF
VREF voltage
VVREF
V
IVREF=0~1mA
○ Input-output logic table
INPUT
OUTPUT
OUT1B
IN1A
IN1B
OUT1A
OUT2A
OPEN
OPEN
H
PS
L
IN2A
IN2B
OUT2B
X
L
X
L
OPEN
All circuit Standby
Standby
H
OPEN
H
H
L
L
L
H
L
Forward
H
H
H
L
Backward
Brake
H
H
L
X: H or L
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○ Package outline
Product No.
BD6382
Lot No.
HTSSOP-B24 (Unit:mm)
○Block diagram
○Pin No. / Pin name
Pin No.
Pin name
Pin No.
13
Pin name
RNF2
OUT2B
OUT2A
VM2
VCC
24
1
2
GND
PS
14
VREF
23
3
VREF
VLIM1
3
VLIM1
SENSE1
CR1
15
4
16
Current Limit Comp.
5
17
NC
9
VM1
6
IN1A
18
IN2B
10
11
OUT1A
OUT1B
7
IN1B
19
IN2A
Predriver
8
NC
20
CR2
12 RNF1
9
VM1
21
SENSE2
VLIM2
VREF
VCC
CR
5
2
CR1
Timer
4
SENSE1
10
11
12
OUT1A
OUT1B
RNF1
22
23
PS
UVLO
24
6
7
IN1A
Logic
TSD
OCP
IN1B
IN2A
IN2B
NC : Non Connection
19
18
16
15
VM2
CR
20
22
CR2
OUT2A
Timer
Predriver
14 OUT2B
13 RNF2
VLIM2
21 SENSE2
Current Limit Comp.
1
GND
REV. A
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○Operation Notes
(1) Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating
conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as
a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum
ratings, consider adding circuit protection devices, such as fuses.
(2) Power supply lines
As return of current regenerated by back EMF of motor happens, take steps such as putting capacitor
between power supply and GND as an electric pathway for the regenerated current. Be sure that there is
no problem with each property such as emptied capacity at lower temperature regarding electrolytic
capacitor to decide capacity value. If the connected power supply does not have sufficient current
absorption capacity, regenerative current will cause the voltage on the power supply line to rise, which
combined with the product and its peripheral circuitry may exceed the absolute maximum ratings. It is
recommended to implement a physical safety measure such as the insertion of a voltage clamp diode
between the power supply and GND pins.
(3) GND potential
The potential of GND pin must be minimum potential in all operating conditions.
(4) Metal on the backside (Define the side where product markings are printed as front)
The metal on the backside is shorted with the backside of IC chip therefore it should be connected to
GND. Be aware that there is a possibility of malfunction or destruction if it is shorted with any potential
other than GND.
(5) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual
operating conditions. This IC exposes its frame of the backside of package. Note that this part is assumed
to use after providing heat dissipation treatment to improve heat dissipation efficiency . Try to occupy as
wide as possible with heat dissipation pattern not only on the board surface but also the backside.
(6) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause
the IC to malfunction.
(7) ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
(8) Thermal shutdown circuit
The IC has a built-in thermal shutdown circuit (TSD circuit). If the chip temperature becomes
Tjmax=150℃, and higher, coil output to the motor will be open. The TSD circuit is designed only to shut
the IC off to prevent runaway thermal operation. It is not designed to protect or indemnify peripheral
equipment. Do not use the TSD function to protect peripheral equipment.
(9) Ground Wiring Pattern
When using both large current and small signal GND patterns, it is recommended to isolate the two
ground patterns, placing a single ground point at the ground potential of application so that the pattern
wiring resistance and voltage variations caused by large currents do not cause variations in the small
signal ground voltage. Be careful not to change the GND wiring pattern of any external components,
either.
REV. A
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
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