BM60052AFV-C [ROHM]
这是一款内置隔离元件的栅极驱动器,绝缘电压为2500Vrms,输入输出延迟时间为120ns,最小输入脉冲宽度为90ns。内置故障信号输出功能、Ready信号输出功能、低电压故障防止功能(UVLO)、热保护功能、DESAT保护功能、米勒钳位功能、开关控制器和门极状态监控功能。 此产品不在网络代理商出售。请联系我们的销售人员进行咨询。;型号: | BM60052AFV-C |
厂家: | ROHM |
描述: | 这是一款内置隔离元件的栅极驱动器,绝缘电压为2500Vrms,输入输出延迟时间为120ns,最小输入脉冲宽度为90ns。内置故障信号输出功能、Ready信号输出功能、低电压故障防止功能(UVLO)、热保护功能、DESAT保护功能、米勒钳位功能、开关控制器和门极状态监控功能。 此产品不在网络代理商出售。请联系我们的销售人员进行咨询。 开关 栅极驱动 控制器 监控 脉冲 驱动器 |
文件: | 总40页 (文件大小:1983K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datasheet
Gate Driver Providing Galvanic Isolation Series
Isolation Voltage 2500Vrms
1ch Gate Driver Providing Galvanic Isolation
BM60052AFV-C
General Description
Key Specifications
The BM60052AFV-C is a gate driver with isolation voltage
2500Vrms, I/O delay time of 120ns, and a minimum input
pulse width of 90ns. Fault signal output function, ready
signal output function, under voltage lockout (UVLO)
function, thermal protection function, desaturation
protection (DESAT) function, miller clamp function,
switching controller function and output state feedback
function are all built-in.
Isolation Voltage:
Maximum Gate Drive Voltage:
I/O Delay Time:
2500Vrms
20V (Max)
120ns (Max)
90ns (Max)
Minimum Input Pulse Width:
Package
SSOP-B28W
W(Typ) x D(Typ) x H(Max)
9.2 mm x 10.4 mm x 2.4 mm
Features
■
■
■
■
■
■
AEC-Q100 Qualified(Note 1)
Fault Signal Output Function
Ready Signal Output Function
Under Voltage Lockout Function
Desaturation Protection Function
Soft Turn-Off Function for Desaturation Protection
(Adjustable Turn-Off time)
■
■
■
■
■
Thermal Protection Function
Active Miller Clamping
Switching Controller Function
Output State Feedback Function
UL1577 Recognized: File No. E356010 (pending)
(Note 1) Grade 1
SSOP-B28W
Applications
Automotive Inverter
Automotive DC-DC Converter
Industrial inverter System
UPS System
Typical Application Circuit
Pin 1
Figure 1. Typical Application Circuit
○Product structure:Silicon integrated circuit ○This product has no designed protection against radioactive rays
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Contents
General Description........................................................................................................................................................................1
Features..........................................................................................................................................................................................1
Applications ....................................................................................................................................................................................1
Key Specifications...........................................................................................................................................................................1
Package..........................................................................................................................................................................................1
Typical Application Circuit ...............................................................................................................................................................1
Contents .........................................................................................................................................................................................2
Recommended Range of External Constants.................................................................................................................................3
Pin Configuration ............................................................................................................................................................................3
Pin Descriptions..............................................................................................................................................................................3
Description of Functions and Examples of Constant Setting ..........................................................................................................6
Absolute Maximum Ratings ..........................................................................................................................................................16
Thermal Resistance......................................................................................................................................................................17
Recommended Operating Conditions...........................................................................................................................................17
Insulation Related Characteristics ................................................................................................................................................17
Electrical Characteristics...............................................................................................................................................................18
UL1577 Ratings Table...................................................................................................................................................................20
Typical Performance Curves.........................................................................................................................................................21
Figure 18. Main Power Supply Circuit Current vs Main Power Supply Voltage .....................................................................21
Figure 19. Output-side Circuit Current vs Output-side Positive Supply Voltage (MODE=H, VEE2=0V, OUT1=L) ...................21
Figure 20. Output-side Circuit Current vs Output-side Positive Supply Voltage (MODE=H, VEE2=0V, OUT1=H)...................21
Figure 21. FET_G ON-resistance vs Temperature (Source/Sink)..........................................................................................21
Figure 22. Oscillation Frequency vs RT Resistance ..............................................................................................................22
Figure 23. Soft-start Time vs Temperature.............................................................................................................................22
Figure 24. FB Pin Threshold Voltage vs Temperature ...........................................................................................................22
Figure 25. COMP Pin Sink Current vs Temperature ..............................................................................................................22
Figure 26. COMP Pin Source Current vs Temperature..........................................................................................................23
Figure 27. Over Current Detection Threshold vs Temperature ..............................................................................................23
Figure 28. Logic Input Filtering Time vs Temperature (L pulse) .............................................................................................23
Figure 29. Logic Input Filtering Time vs Temperature (H pulse) ............................................................................................23
Figure 30. ENA Input Filtering Time Figure vs Temperature ..................................................................................................24
Figure 31. MODE Input Voltage vs Temperature (VCC2=14V) ................................................................................................24
Figure 32. OUT1H ON-resistance (Source) vs Temperature (IOUT1H=-40mA) ........................................................................24
Figure 33. OUT1L ON-resistance (Sink) vs Temperature (IOUT1L=40mA)...............................................................................24
Figure 34. PROOUT ON-resistance vs Temperature (IPROOUT=40mA)...................................................................................25
Figure 35. Turn ON time vs Temperature...............................................................................................................................25
Figure 36. Turn OFF time vs Temperature.............................................................................................................................25
Figure 37. OUT2 ON-resistance vs Temperature (IOUT2=40mA) ............................................................................................25
Figure 38. DESAT Charging Current vs Temperature............................................................................................................26
Figure 39. DESAT Detection Voltage vs Temperature ...........................................................................................................26
Figure 40. DESAT Leading Edge Blanking Time vs Temperature..........................................................................................26
Figure 41. DESAT Detection Filter Time vs Temperature....................................................................................................26
Figure 42. DESAT Detection Delay Time (PROOUT) vs Temperature...................................................................................27
Figure 43. DESAT Pin Low Voltage vs Temperature..............................................................................................................27
Figure 44. Output Delay Difference between PROOUT and FLT vs Temperature .................................................................27
Figure 45. Thermal Detection Voltage vs Temperature..........................................................................................................27
Selection of Components Externally Connected...........................................................................................................................28
I/O Equivalence Circuits................................................................................................................................................................29
Operational Notes.........................................................................................................................................................................33
Ordering Information.....................................................................................................................................................................35
Marking Diagram ..........................................................................................................................................................................35
Physical Dimension, Tape and Reel Information...........................................................................................................................36
Revision History............................................................................................................................................................................37
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Recommended Range of External Constants
Recommended Value
Pin Name
Symbol
Unit
Min
1.0
Typ
3.3
-
Max
10.0
-
VREG
VCC2
RT
CVREG
CVCC2
RRT
µF
µF
kΩ
0.33
24
68
150
Pin Configuration
(TOP VIEW)
VEE2
1
2
28 GND1
SENSE
FET_G
27
26
PROOUT
VTSIN
DESAT
NC
3
4
25 VREG
5
V_BATT
COMP
24
23
6
GND2
MODE
UVLOIN
VCC2
NC
7
22 FB
21
8
RT
9
20 RDY
19 INB
10
11
12
13
18
17
16
15
INA
OUT1H
OUT1L
OUT2
ENA
FLT
14
GND1
VEE2
Figure 2. Pin Configuration
Pin Descriptions
Pin No.
1
Pin Name
Function
VEE2
PROOUT
VTSIN
DESAT
NC
Output-side negative power supply pin
Soft turn-off pin/Gate voltage input pin
Temperature sensor voltage input pin
Desaturation detection pin
Non-connection
2
3
4
5
6
GND2
MODE
UVLOIN
VCC2
NC
Output-side ground pin
7
Mode selection pin of output-side UVLO
Output-side UVLO setting input pin
Output-side positive power supply pin
Non-connection
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
OUT1H
OUT1L
OUT2
VEE2
GND1
FLT
Source side output pin
Sink side output pin
Miller Clamp pin
Output-side negative power supply pin
Input-side ground pin
Fault output pin
ENA
Input enabling signal input pin
Control input pin A
INA
INB
Control input pin B
RDY
Ready output pin
RT
Switching frequency setting pin for switching controller
Error amplifier inverting input pin for switching controller
Error amplifier output pin for switching controller
Main power supply pin
FB
COMP
V_BATT
VREG
FET_G
SENSE
GND1
Input-side internal power supply pin
MOS FET control pin for switching controller
Current detection pin for switching controller
Input-side ground pin
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Pin Descriptions – continued
1. V_BATT (Main power supply pin)
This is the main power supply pin. Connect a bypass capacitor between the V_BATT and GND1 pins in order to
suppress voltage variations.
2. GND1 (Input-side ground pin)
The GND1 pin is a ground pin on the input side.
3. VCC2 (Output-side positive power supply pin)
The VCC2 pin is a positive power supply pin on the output side. To reduce voltage fluctuations due to the
OUT1H/OUT1L pin output current and due to the driving current of the internal transformers, connect a bypass
capacitor between the VCC2 and GND2 pins.
4. VEE2 (Output-side negative power supply pin)
The VEE2 pin is a negative power supply pin on the output side. To reduce voltage fluctuations due to the OUT1H/OUT1L
pin output current and due to the driving current of the internal transformers, connect a bypass capacitor between the
VEE2 and the GND2 pins. Connect the VEE2 pin to the GND2 pin when no negative power supply is used.
5. GND2 (Output-side ground pin)
The GND2 pin is a ground pin on the output side. Connect the GND2 pin to the emitter/source of a power device.
6. INA, INB, ENA (Control Input pin)
The INA, INB, ENA are pins used to determine output logic.
ENA
L
H
H
H
INB
X
H
L
L
INA
X
X
L
H
OUT1H
Hi-Z
Hi-Z
Hi-Z
H
OUT1L
L
L
L
Hi-Z
7. FLT (Fault output pin)
The FLT pin is an open drain pin used to output a fault signal when desaturation protection function (DESAT) or
thermal protection function is activated, and fault state (FLT=L output) is released in rising of ENA (L to H).
Status
FLT
Hi-Z
L
While in normal operation
When DESAT or thermal protection is activated
8. RDY (Ready output pin)
The RDY pin is an open drain pin that outputs an internal abnormal state (V_BATT UVLO, VCC2 UVLO, output state
feedback). ‘output state feedback’ is a function to compare gate logic monitored by the PROOUT pin with input logic,
and outputs L when it does not match.
Status
RDY
Hi-Z
L
While in normal operation
V_BATT UVLO or VCC2 UVLO or Output state feedback (disaccord)
9. MODE (Mode selection pin of output-side UVLO)
The MODE pin is a pin which selects internal threshold or external setting threshold for output-side UVLO.
MODE
Output-side UVLO threshold voltage
Setting by external (Use UVLOIN pin)
L (=GND2)
H (=VCC2)
Fixed (=VUVLO2L) (Connect UVLOIN pin to VCC2 pin)
10. UVLOIN (Output-side UVLO setting input pin)
The UVLOIN pin is a pin for deciding UVLO setting value of VCC2. The threshold value of UVLO can be set by
dividing the resistance voltage of VCC2. UVLOIN activates only at the MODE pin=L. When the MODE pin=H,
connect the UVLOIN pin to the VCC2 pin.
11. OUT1H, OUT1L (Output pin)
The OUT1H pin is a source side pin used to drive the gate of a power device, and the OUT1L pin is a sink side pin
used to drive the gate of a power device.
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Pin Descriptions – continued
12. OUT2 (Miller Clamp pin)
This is the miller clamp pin for preventing a rise of gate voltage due to miller current of output element connected to
the OUT1H/OUT1L pin. It also functions as a pin for monitoring gate voltage for miller clamp. The OUT2 pin voltage
become less than VOUT2ON (Typ 2.0V), miller clamp function operates. The OUT2 pin should be connect to the VEE2
pin when miller clamp function is not used.
13. PROOUT (Soft turn-off pin/Gate voltage input pin)
This is a pin for soft turn-off of output element when desaturation protection or thermal protection is in action. It also
functions as a pin for monitoring gate voltage for output state feedback function.
14. DESAT (Desaturation detection pin)
This is a detection pin for DESAT protection. When the DESAT pin voltage VDESATDET or more, DESAT function will be
activated. This may cause the IC to malfunction in an open state. To avoid such trouble, short circuit the DESAT pin to
the GND2 pin when the desaturation protection is not used. In order to prevent the wrong detection due to noise, the
noise filter time tDESATFIL is set.
15. VTSIN (Temperature sensor voltage input pin)
The VTSIN pin is a temperature sensor voltage input pin, which can be used for thermal protection of an output
device. If VTSIN pin voltage becomes VTSDET or less, the thermal protection function will be activated. IC may
malfunction in the open status, so be sure to supply the VTSIN more than VTSDET if the thermal protection function is
not used. In order to prevent the wrong detection due to noise, the noise mask time tTSFIL is set. In addition, it can be
used also as a compulsive shutdown pin other than a temperature sense by inputting a comparator output etc.
16. RT (Switching frequency setting pin for switching controller)
The RT pin is a pin used to make setting of switching frequency of switching controller. The switching frequency is
determined by the resistance value connected between the RT and GND pins. The value of switching frequency is
determined by the value of the resistor RRT.
fSW = 1/(7.3×10-8×RRT + 2.2×10-4) [kHz]
17. FB (Error amplifier inverting input pin for switching controller)
This is a voltage feedback pin of the switching controller. This pin combine with voltage monitoring at overvoltage
protection function and under voltage protection function for switching controller. When overvoltage or under voltage
protection is activated, switching controller will be at OFF state (the FET_G pin outputs L). When the protection
holding time tDCDCRLS is completed, the protection function will be released. Under voltage function is not activated
during soft-start.
18. COMP (Error amplifier output pin for switching controller)
This is the gain control pin of the switching controller. Connect a phase compensation capacitor and resistor.
19. VREG (Input-side internal power supply pin)
This is the input-side internal power supply pin. Be sure to connect a bypass capacitor between the VREG and GND
pins even when the switching controller is not used, in order to prevent oscillation and suppress voltage variation due
to FET_G output current and IC internal transformer drive current.
20. FET_G (MOSFET control pin for switching controller)
This is a MOSFET control pin for the switching controller transformer drive.
21. SENSE (Current detection pin for switching controller)
This is a pin connected to the resistor of the switching controller current feedback. This pin combines with current
monitoring at overcurrent restriction function for switching controller. When overcurrent restriction is activated,
switching controller will be at OFF state (the FET_G pin outputs L), and the overcurrent restriction function will be
released in the next switching period.
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Description of Functions and Examples of Constant Setting
1. Miller Clamp Function
When OUT1H/OUT1L=Hi-Z/L and the OUT2 pin voltage<VOUT2ON, internal MOS of the OUT2 pin is turned ON and
miller clamp function operates. Miller clamp will be maintained until next turn on (OUT1H/OUT1L=H/Hi-Z).
During DESAT protection and thermal protection, the miller clamp function does not operate and the miller clamp
function is enabled after soft turn-off release time tSTO has passed.
OUT2 pin
input voltage
IN
OUT2 output
L
less than VOUT2ON
L
H
X
Hi-Z
VCC2
PREDRIVER
OUT1H/OUT1L
PREDRIVER
PREDRIVER
PREDRIVER
PROOUT
OUT2
LOGIC
GND2
VEE2
+
-
VOUT2ON
Figure 3. Block Diagram of Miller Clamp Function
H
L
ENA
INA
H
L
VTSDET
VTSIN
VDESATDET
DESAT
FLT
Hi-Z
L
H
Hi-Z
L
OUT1H
OUT1L
OUT2
VOUT2ON
tPON
tSTO
tSTO
Figure 4. Timing Chart of Miller Clamp Function
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Description of Functions and Examples of Constant Setting – continued
2. Under Voltage Lockout (UVLO)Function
The BM60052AFV-C has the under voltage lockout (UVLO) function on V_BATT and VCC2. When the power supply
voltage drops to VUVLOBATTL, VUVLOINL (MODE=L), or VUVLO2L (MODE=H), the OUT1H/OUT1L pin will output the "Hi-Z/L"
and the RDY pin will output the “L” signal. When the power supply voltage rises to VUVLOBATTH
(=VUVLOBATTL+VUVLOBATTHYS), VUVLOINH (=VUVLOINL+VUVLOINHYS) or VUVLO2H (=VUVLO2L+VUVLO2HYS), these pins will be reset.
In addition, to prevent miss-triggers due to noise, mask time tUVLOBATTFIL and tUVLO2FIL are set on both voltage sides.
H
L
INA
VUVLOBATTH
V_BATT
VUVLOBATTL
Hi-Z
L
RDY
H
L
OUT1H
OUT1L
H
Hi-Z
L
FET_G
Figure 5. V_BATT UVLO Function Operation Timing Chart
H
L
INA
VUVLOINH
VUVLOINL
UVLOIN
(VCC2)
Hi-Z
L
RDY
H
OUT1H
OUT1L
Hi-Z
L
H
L
FET_G
Figure 6. VCC2 UVLO Function Operation Timing Chart (MODE=L)
H
L
INA
VUVLO2H
VUVLO2L
VCC2
Hi-Z
L
RDY
H
OUT1H
OUT1L
Hi-Z
L
H
L
FET_G
Figure 7. VCC2 UVLO Function Operation Timing Chart (MODE=H)
: Since the V_BATT to GND1 pin voltage is low and the output MOS does not turn ON,
the output pins become Hi-Z conditions.
: Since the VCC2 to VEE2 pin voltage is low and the output MOS does not turn ON,
the output pins become Hi-Z conditions.
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Description of Functions and Examples of Constant Setting – continued
3. Desaturation Protection Function
When the DESAT pin voltage VDESATDET or more, the desaturation protection function will be activated. When the
desaturation protection function is activated, the OUT1H/OUT1L pin voltage will be set to the “Hi-Z/Hi-Z” level and the
PROOUT pin voltage will go to the “L” level first (soft turn-off). Next, after tSTO has passed, the OUT1H/OUT1L pin
become Hi-Z/L (PROOUT pin hold L). When the rising edge is put in the ENA pin after ENA=L (>tENAFIL), the
desaturation protection function will be released. When the OUT1H/OUT1L pin become Hi-Z/L or Hi-Z/Hi-Z, MOSFET
built-in between the DESAT pin and the GND2 pin turns ON to discharge CBLANK for desaturation protection function.
When the OUT1H/OUT1L pin become H/Hi-Z, internal MOSFET connected to the DESAT pin turns OFF.
Blank time tBLANKEXTERNAL can be set by the following formula.
[s]
VCC2
OUT1H/OUT1L
LOGIC
FLT
PROOUT
DESAT
FLT
DESATFIL
CBLANK
VDESATDET
GND2
VEE2
GND1
Figure 8. Block Diagram of DESAT
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3. Description of Functions – continued
H
L
IN
tDESATFIL
tDESATFIL
tDESATPRO
tDESATPRO
blanking time
blanking time
VDESATDET
DESAT
tDESATLEB
tDESATLEB
OUT1H
H
Hi-Z
L
OUT1L
tBLANKEXTERNAL
tBLANKEXTERNAL
Hi-Z
L
Hi-Z
PROOUT
FLT
L
tSTO
tSTO
H
L
ENA
>tENAFIL
>tENAFIL
Figure 9. DESAT Operation Timing Chart
Start
OUT1H/OUT1L=Hi-Z/L, PROOUT=L
ENA=L to H
No
No
VDESAT>VDESATDET
Yes
No
Exceed filter time
Yes
Yes
FLT=Hi-Z
OUT1H/OUT1L=Hi-Z/Hi-Z, PROOUT=L, FLT=L
No
No
IN=H
Exceed tSTO
Yes
Yes
OUT1H/OUT1L=H/Hi-Z, PROOUT=Hi-Z
Figure 10. DESAT Operation Status Transition Diagram
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Description of Functions and Examples of Constant Setting – continued
4. Thermal Protection Function
When the VTSIN pin voltage becomes VTSDET or less, the thermal protection function will be activated. When the
thermal protection function is activated, the OUT1H/OUT1L pin voltage will be set to the “Hi-Z/Hi-Z” level and the
PROOUT pin voltage will go to the “L” level first (soft turn-off). Next, when the VTSIN pin voltage rises to the
threshold value and after tSTO has passed, the OUT1H/OUT1L pin become Hi-Z/L (the PROOUT pin hold L).
When the rising edge of the ENA pin after ENA=L (>tENAFIL), the thermal protection function will be released.
VCC2
OUT1H/OUT1L
LOGIC
TSFIL
FLT
PROOUT
VTSIN
FLT
SENSOR
VTSDET
GND2
VEE2
GND1
Figure 11. Block Diagram of Thermal Protection Function
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4. Thermal Protection Function – continued
H
L
IN
tTSFIL
tTSFIL
VTSIN
VTSDET
H
OUT1H
OUT1L
Hi-Z
L
Hi-Z
L
Hi-Z
PROOUT
FLT
L
tSTO
tSTO
H
L
ENA
>tENAFIL
>tENAFIL
Figure 12. Thermal Protection Function Operation Timing Chart
START
OUT1H/OUT1L=Hi-Z/L, PROOUT=L
No
No
VTSIN<VTSDET
Yes
No
No
ENA=L to H
Exceed filter time
Yes
Yes
FLT=Hi-Z
OUT1H/OUT1L=Hi-Z/Hi-Z, PROOUT=L, FLT=L
No
VTSIN>VTSDET
IN=H
Yes
Yes
No
OUT1H/OUT1L=H/Hi-Z, PROOUT=Hi-Z
Exceed tSTO
Figure 13. Thermal Protection Function Operation Status Transition Diagram
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Description of Functions and Examples of Constant Setting – continued
5. Switching Controller
(a) Basic action
This IC has a built-in switching power supply controller which repeats ON/OFF synchronizing with internal clock
set by RT pin. When V_BATT voltage is supplied (VBATT>VUVLOBATTH (=VUVLOBATTL+VUVLOBATTHYS)), FET_G pin starts
switching by soft-start. Output voltage is determined by the following equation depending on external resistance
and winding ratio “n” of fly back transformer (n= VOUT2 side winding number/VOUT1 side winding number)
VOUT2 = VFB ×{(R1+R2)/R2 }×n [V]
(b) Max duty
When, for example, output load is large, and voltage level of the SENSE pin does not reach current detection
level, output is forcibly turned OFF by Maximum ON Duty (DONMAX).
(c) Protection function
The switching controller has the overvoltage protection (OVP) and the under voltage protection (UVP) as
protection functions, and monitoring the FB pin voltage.
When the protection function is activated, switching controller will be OFF state (the FET_G pin outputs L). The
protection holding time (tDCDCRLS) is completed, the protection function will be released. Under voltage function is
not activated during soft-start.
VOUT1
RT
FB
OSC
VFB
R1
R2
-
UVLO_BATT
+
OVP
UVP
COMP
V_BATT
VREG
VOUT2
Max duty
VREG
Slope
COMP
VFB
+
-
R
Q
FET_G
SENSE
GND1
S
OSC
OC
Soft-start
Figure 14. Block Diagram of Switching Controller
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5. Switching Controller – continued
(d)The pin handling when not using switching controller
When not using switching controller, do pin handling as follows.
Pin No.
21
22
23
24
25
26
27
Pin Name
RT
Processing Method
pull down in GND1 by 68kΩ
connect to VREG
connect to GND1
connect power supply
connect capacitor
open
FB
COMP
V_BATT
VREG
FET_G
SENSE
connect to VREG
RT
FB
OSC
-
UVLO_BATT
OVP
UVP
Max duty
VFB
+
COMP
V_BATT
VREG
VREG
Slope
COMP
VFB
+
-
R
S
Q
FET_G
SENSE
GND1
OSC
OC
Soft-start
Figure 15. The pin handling when not using switching controller
6. Gate State Monitoring Function
When input logic and gate logic of output device monitored with the PROOUT pin are compared, a logic L is output
from the RDY pin when they disaccord. In order to prevent the detection error due to delay of input and output, OSFB
(Output state feedback) filter time tOSFBFIL is provided.
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Description of Functions and Examples of Constant Setting – continued
7. I/O Condition Table
Input
Output
No.
Status
1
2
○
○
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
L
H
H
X
X
X
X
X
X
L
L
L
H
H
X
X
X
X
X
X
X
X
X
X
L
H
L
X
X
H
L
Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z
L
L
L
Hi-Z
Hi-Z
L
DESAT
Protection
○
○
L
L
3
UVLO
○
X
X
X
X
X
X
X
X
H
H
L
H
L
Hi-Z
Hi-Z
Hi-Z
Hi-Z
L
L
L
L
Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z
Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z
UVLO_VBATT
UVLO_VCC2
4
UVLO
○
L
L
5
○
○
○
○
○
○
○
○
○
○
○
○
UVLO
H
L
H
L
L
6
UVLO
L
L
7
○
○
○
○
○
○
○
○
○
○
H
L
X
X
H
L
Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z Hi-Z
L
L
L
L
Hi-Z
Hi-Z
L
Thermal
Protection
8
L
9
H
H
H
H
H
H
H
H
H
L
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
H
L
L
L
L
L
L
Hi-Z Hi-Z Hi-Z
Disable
10
11
12
13
14
15
16
L
L
Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z Hi-Z
H
H
H
H
H
H
H
L
H
L
L
INB Active
L
H
L
H
L
L
Normal Operation
L Input
L
L
L
L
H
H
H
L
H
L
Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z
Hi-Z Hi-Z Hi-Z Hi-Z
Normal Operation
H Input
L
H
L
○: > UVLO, X:Don't care
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Description of Functions and Examples of Constant Setting – continued
8. Power Supply Startup/Shutdown Sequence
H
L
IN
VUVLOBATTL
VUVLOBATT
L
VUVLOBATTL
V_BATT
VCC2
0V
VUVLO2H
VUVLO2H
VUVLO2H
0V
0V
(=VUVLO2L+ VUVLO2HYS
)
VEE2
H
OUT1H
OUT1L
Hi-Z
L
Hi-Z
OUT2
PROOUT
RDY
L
Hi-Z
L
Hi-Z
L
H
L
IN
V_BATT
VCC2
VUVLOBATTH
(=VUVLOBATTL+ VUVLOBATTHYS
VUVLOBATTL
VUVLO2H
VUVLOBATTH
0V
)
VUVLO2L
VUVLO2L
0V
0V
VEE2
H
OUT1H
OUT1L
Hi-Z
L
Hi-Z
OUT2
PROOUT
RDY
L
Hi-Z
L
Hi-Z
L
H
L
IN
V_BATT
VCC2
VUVLOBATTL
VUVLOBATTL
VUVLOBATTH
VUVLO2L
0V
VUVLO2H
VUVLO2H
0V
0V
VEE2
H
OUT1H
OUT1L
Hi-Z
L
Hi-Z
L
Hi-Z
OUT2
PROOUT
RDY
L
Hi-Z
L
H
L
IN
V_BATT
VCC2
VUVLOBATTH
VUVLOBATTH
VUVLOBATTH
0V
VUVLO2L
VUVLO2L
VUVLO2L
0V
0V
VEE2
H
OUT1H
OUT1L
Hi-Z
L
Hi-Z
OUT2
PROOUT
RDY
L
Hi-Z
L
Hi-Z
L
: Since the VCC2 to VEE2 pin voltage is low and the output MOS does not turn ON, the
output pins become Hi-Z conditions.
: Since the V_BATT to GND1 pin voltage is low and the RDY output MOS does not turn ON,
the output pins become Hi-Z conditions.
Figure 16. Power Supply Startup/Shutdown Sequence
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Absolute Maximum Ratings
Parameter
Symbol
VBATT
VCC2
Limit
Unit
V
-0.3 to +40.0(Note 2)
-0.3 to +24.0(Note 3)
-15.0 to +0.3(Note 3)
Main Power Supply Voltage
Output-side Positive Supply Voltage
Output-side Negative Supply Voltage
V
VEE2
V
Maximum Difference
VMAX2
30.0
V
Between Output-Side Positive and Negative Voltages
INA, INB, ENA Pin Input Voltage
MODE Pin Input Voltage
VIN
VMODE
VDESAT
VVTS
-0.3 to +7.0(Note 2)
V
V
-0.3 to +VCC2+0.3 or +24.0(Note 3)
DESAT Pin Input Voltage
-0.3 to +VCC2+0.3 or +24.0(Note 3)
V
VTSIN Pin Input Voltage
-0.3 to +VCC2+0.3 or +24.0(Note 3)
V
UVLOIN Pin Input Voltage
VUVLOIN
IOUT1PEAK
IOUT2PEAK
IPROOUTPEAK
IFLT
-0.3 to +VCC2+0.3 or +24.0(Note 3)
V
OUT1H, OUT1L Pin Output Current (Peak 10μs)
OUT2 Pin Output Current (Peak 10μs)
PROOUT Pin Output Current (Peak 10μs)
FLT, RDY Pin Output Current
5.0(Note 4)
5.0(Note 4)
2.5(Note 4)
10
A
A
A
mA
A
FET_G Pin Output Current (Peak 1μs)
Storage Temperature Range
IFET_GPEAK
Tstg
1
-55 to +150
°C
Maximum Junction Temperature
Tjmax
+150
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB boards with thermal resistance taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
(Note 2) Relative to GND1
(Note 3) Relative to GND2
(Note 4) Must not exceed Tjmax=150C
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BM60052AFV-C
Thermal Resistance(Note 5)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 7)
2s2p(Note 8)
SSOP-B28W
Junction to Ambient
Junction to Top Characterization Parameter(Note 6)
θJA
112.9
34
64.4
23
°C/W
°C/W
ΨJT
(Note 5) Based on JESD51-2A (Still-Air).
(Note 6) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 7) Using a PCB board based on JESD51-3.
(Note 8) Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70μm
Layer Number of
Measurement Board
Material
FR-4
Board Size
114.3mm x 76.2mm x 1.6mmt
2 Internal Layers
4 Layers
Top
Copper Pattern
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Thickness
Footprints and Traces
70μm
74.2mm x 74.2mm
35μm
74.2mm x 74.2mm
70μm
Recommended Operating Conditions
Parameter
Main Power Supply Voltage(Note 9)
Symbol
Min
4
Typ
12
15
-
Max
Unit
V
VBATT
VCC2
VEE2
32
20
0
Output-side Positive Supply Voltage(Note 10)
Output-side Negative Supply Voltage(Note 10)
10
-12
V
V
Maximum Difference
VMAX2
10
-
28
V
Between Output-Side Positive and Negative Voltages
Switching Frequency for Switching Controller
Operating Temperature
fSW
100
-40
-
500
kHz
°C
Topr
+25
+125
(Note 9) Relative to GND1
(Note 10) Relative to GND2
Insulation Related Characteristics
Parameter
Symbol
RS
Characteristic
Unit
Ω
Insulation Resistance (VIO=500V)
Insulation Withstand Voltage/1min
Insulation Test Voltage/1s
>109
2500
3000
VISO
Vrms
Vrms
VISO
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Electrical Characteristics
(Unless otherwise specified Ta=-40°C to +125°C, VBATT=4V to 32V, VCC2=UVLO to 20V, VEE2=-12V to 0V)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
General
Main Power Supply
1.0
0.7
0.8
1.6
1.3
1.4
2.2
1.9
2.0
IBATT1
IBATT2
IBATT3
mA
mA
mA
VBATT=4V
Circuit Current 1
Main Power Supply
VBATT=12V
VBATT=32V
Circuit Current 2
Main Power Supply
Circuit Current 3
1.0
0.7
1.1
0.8
1.8
1.5
1.9
1.6
2.6
2.3
2.7
2.4
Output-side Circuit Current 1
Output-side Circuit Current 2
Output-side Circuit Current 3
Output-side Circuit Current 4
ICC21
ICC22
ICC23
ICC24
mA
mA
mA
mA
VCC2=14V, OUT1L=L
VCC2=14V, OUT1H=H
VCC2=18V, OUT1L=L
VCC2=18V, OUT1H=H
VCC2=16V, VEE2=-8V,
OUT1L=L
1.2
0.9
2.0
1.7
2.8
2.5
Output-side Circuit Current 5
ICC25
ICC26
mA
mA
VCC2=16V, VEE2=-8V,
OUT1H=H
Output-side Circuit Current 6
Switching Power Supply Controller
FET_G Output Voltage H1
4.2V<VBATT≤32V
IFET_G=0A(open)
VBATT≤4.2V
VFETGH1
VFETGH2
3.8
-
4.0
4.2
V
V
FET_G Output Voltage H2
V
BATT-0.2
VBATT
IFET_G=0A(open)
IFET_G=0A(open)
IFET_G=-10mA
IFET_G=10mA
FET_G Output Voltage L
FET_G ON-resistance (Source)
FET_G ON-resistance (Sink)
Oscillation Frequency
VFETGL
RONGH
0
3
-
6
0.3
12
V
Ω
RONGL
0.3
182
-
0.6
200
-
1.3
222
50
Ω
fSW
kHz
ms
V
RRT=68kΩ
Soft-start Time
tSS
FB Pin Threshold Voltage
FB Pin Input Current
VFB
1.47
-0.8
-160
40
1.50
0
1.53
+0.8
-40
160
3.60
0.13
-
IFB
µA
µA
µA
V
COMP Pin Sink Current
COMP Pin Source Current
V_BATT UVLO ON Voltage
V_BATT UVLO Hysteresis
V_BATT UVLO Filtering Time
Maximum ON DUTY
ICOMPSINK
ICOMPSOURCE
VUVLOBATTL
VUVLOBATTHYS
tUVLOBATTFIL
DONMAX
VOVTH
-80
80
3.40
0.1
2
3.20
0.07
-
V
μs
%
-
48
1.65
-
Over Voltage Detection Threshold
1.60
1.70
V
Under Voltage Detection
Threshold
VUVTH
1.23
1.30
1.37
V
Over Current Detection Threshold
Protection Holding Time
VOCTH
0.17
20
0.20
40
0.23
60
V
tDCDCRLS
ms
Logic
Logic High Level Input Voltage
Logic Low Level Input Voltage
Logic Pull-Down Resistance
Minimum Input Pulse Width
ENA Input Filtering Time
MODE Low Level Input Voltage
MODE High Level Input Voltage
VINH
VINL
2.0
-
-
5.5
0.8
V
V
INA, INB, ENA
INA, INB, ENA
INA, INB, ENA
INA, INB
0
RIND
25
50
-
100
kΩ
ns
µs
V
tINFIL
-
90
tENAFIL
VMODEL
VMODEH
-
0
0.5
-
0.8
ENA
0.3xVCC2
VCC2
Relative to GND2
Relative to GND2
0.7xVCC2
-
V
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Electrical Characteristics – continued
(Unless otherwise specified Ta=-40°C to +125°C, VBATT=4V to 32V, VCC2=UVLO to 20V, VEE2=-12V to 0V)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Output
IOUT1H=-40mA
IOUT1L=40mA
OUT1H ON-resistance (Source)
OUT1L ON-resistance (Sink)
RONH
RONL
0.50
0.25
0.85
0.45
1.45
0.80
Ω
Ω
VCC2=15V
Guaranteed by design
IPROOUT=40mA
3.0
4.5
-
OUT1 Maximum Current
PROOUT ON-resistance
IOUT1MAX
A
0.45
0.85
1.55
RONPRO
tPONA
Ω
ns
ns
ns
ns
ns
ns
ns
ns
Ω
40
40
35
35
-25
-25
-
80
80
75
75
-5
120
120
115
115
+15
+15
-
INA=PWM, INB=L
INA=H, INB=PWM
INA=PWM, INB=L
INA=H, INB=PWM
tPOFFA – tPONA
Turn ON Time
tPONB
tPOFFA
tPOFFB
tPDISTA
tPDISTB
tRISE
Turn OFF Time
Propagation Distortion
-5
tPOFFB – tPONB
Rise Time
50
50
0.45
2
10nF between OUT1-VEE2
Guaranteed by design
IOUT2=40mA
Fall Time
tFALL
-
-
0.25
1.8
100
0.80
2.2
-
OUT2 ON-resistance
RON2
OUT2 ON Threshold Voltage
Common Mode Transient Immunity
Protection Functions
Output-side UVLO ON
Threshold Voltage (UVLOIN)
Output-side UVLO Threshold
Hysteresis (UVLOIN)
VOUT2ON
CM
V
Relative to VEE2
-
kV/μs Guaranteed by design
MODE=L
MODE=L
VUVLOINL
0.85
0.90
0.95
V
V
0.10×
VUVLOINL
10.9
0.8
0.11×
VUVLOINL
11.5
0.12×
VUVLOINL
12.1
1.6
VUVLOINHYS
MODE=H
MODE=H
Output-side UVLO ON Voltage
Output-side UVLO Hysteresis
Output-side UVLO Filtering Time
DESAT Charging Current
DESAT Leading Edge
Blanking Time
VUVLO2L
VUVLO2HYS
tUVLO2FIL
IDESATC
V
V
1.2
6
12
22
µs
µA
300
335
370
VDESAT=2V
tDESATLEB
0.14
0.20
0.26
µs
Guaranteed by design
Relative to GND2
DESAT Detection Voltage
DESAT Detection Filtering Time
DESAT Detection
VDESATDET
tDESATFIL
V
6.0
6.4
0.2
6.8
0.12
0.28
µs
tDESATPRO
VDESATL
tPROFLT
0.26
-
0.38
0.1
0.50
0.22
0.7
µs
V
Delay Time (PROOUT)
DESAT Pin Low Voltage
Output Delay Difference
between PROOUT and FLT
Thermal Detection Voltage
Thermal Detection Filtering Time
Soft Turn Off Release Time
FLT Output Low Voltage
Gate State H Detection
Threshold Voltage
IDESAT=1mA
0.1
0.4
µs
VTSDET
tTSFIL
tSTO
1.62
4
1.72
10
1.82
30
V
µs
µs
V
Relative to GND2
30
-
-
110
0.40
VFLTL
0.18
IFLT=5mA
VOSFBH
VOSFBL
4.5
4.0
5.0
4.5
5.5
5.0
V
V
Relative to GND2
Gate State L Detection
Threshold Voltage
Relative to GND2
IRDY=5mA
OSFB Output Filtering Time
RDY Output Low Voltage
tOSFBFIL
VRDYL
4.0
-
6.2
8.4
µs
V
0.18
0.40
50%
50%
90%
tPON
INA
tPOFF
90%
50%
50%
10%
OUT1H
OUT1L
10%
tFALL
tRISE
Figure 17. INA to OUT1H/OUT1L Timing Chart
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BM60052AFV-C
UL1577 Ratings Table (pending)
Following values will be described in UL Report.
Parameter
Side 1 (Input Side) Circuit Current
Side 2 (Output Side) Circuit Current
Side 1 (Input Side) Consumption Power
Side 2 (Output Side) Consumption Power
Isolation Voltage
Value
1.3
Unit
mA
mA
mW
mW
Vrms
°C
Conditions
VBATT=12V, OUT1L=L
2
VCC2=16V, VEE2=-8V, OUT1L=L
VBATT=12V, OUT1L=L
15.6
48
VCC2=16V, VEE2=-8V, OUT1L=L
2500
125
150
150
5.5
Maximum Operating (Ambient) Temperature
Maximum Junction Temperature
Maximum Storage Temperature
Maximum Data Transmission Rate
°C
°C
MHz
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BM60052AFV-C
Typical Performance Curves
2.2
2
2.6
2.2
1.8
1.4
1
+125°C
+25°C
1.8
1.6
1.4
1.2
1
+125°C
+25°C
-40°C
-40°C
14
0.8
10
12
16
18
20
4
11
18
25
32
Output-side Positive SupplyVoltage : VCC2 [V]
Main Power SupplyVoltage : VBATT [V]
Figure 19. Output-side Circuit Current vs
Output-side Positive Supply Voltage
(MODE=H, VEE2=0V, OUT1=L)
Figure 18. Main Power Supply Circuit Current
vs Main Power Supply Voltage
12
2.2
1.9
1.6
1.3
1
Source
+125°C
+25°C
9
6
3
0
-40°C
Sink
0.7
10
15
20
-40
0
40
80
120
Output-side Positive SupplyVoltage : VCC2 [V]
Temperature : Ta [°C]
Figure 20. Output-side Circuit Current vs
Output-side Positive Supply Voltage
(MODE=H, VEE2=0V, OUT1=H)
Figure 21. FET_G ON-resistance vs
Temperature (Source /Sink)
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BM60052AFV-C
Typical Performance Curves – continued
50
40
30
20
10
0
480
430
380
330
280
230
180
130
80
20
40
60
80 100 120 140
-40
0
40
80
120
RT Resistance : RRT [kΩ]
Temperature : Ta [°C]
Figure 23. Soft-start Time vs
Temperature
Figure 22. Oscillation Frequency vs
RT Resistance
1.53
1.52
1.51
1.5
-40
-60
-80
-100
-120
-140
-160
1.49
1.48
1.47
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 24. FB Pin Threshold Voltage vs
Temperature
Figure 25. COMP Pin Sink Current vs
Temperature
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BM60052AFV-C
Typical Performance Curves – continued
160
0.23
0.21
0.19
0.17
140
120
100
80
60
40
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 26. COMP Pin Source Current vs Temperature
Figure 27. Over Current Detection Threshold vs Temperature
90
60
30
0
90
60
30
0
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 28. Logic Input Filtering Time vs
Temperature (L pulse)
Figure 29. Logic Input Filtering Time vs
Temperature (H pulse)
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Typical Performance Curves – continued
0.8
9
8.8
8.6
8.4
8.2
8
VMODEH
0.6
0.4
0.2
0
7.8
7.6
7.4
7.2
7
VMODEL
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 30. ENA Input Filtering Time Figure vs
Temperature
Figure 31. MODE Input Voltage vs Temperature
(VCC2=14V)
0.8
0.75
0.7
1.4
1.3
1.2
1.1
1
0.65
0.6
0.55
0.5
0.9
0.8
0.7
0.6
0.5
0.45
0.4
0.35
0.3
0.25
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 32. OUT1H ON-resistance (Source) vs
Temperature (IOUT1H=-40mA)
Figure 33. OUT1L ON-resistance (Sink) vs
Temperature (IOUT1L=40mA)
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Typical Performance Curves – continued
120
100
80
1.45
1.25
1.05
0.85
0.65
0.45
tPONB
tPONA
60
40
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 34. PROOUT ON-resistance vs
Temperature (IPROOUT=40mA)
Figure 35. Turn ON Time vs Temperature
0.8
0.6
0.4
0.2
115
95
tPOFFB
75
tPOFFA
55
35
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 36. Turn OFF Time vs
Temperature
Figure 37. OUT2 ON-resistance vs
Temperature (IOUT2=40mA)
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Typical Performance Curves – continued
370
360
350
340
330
320
310
300
6.8
6.7
6.6
6.5
6.4
6.3
6.2
6.1
6
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 38. DESAT Charging Current vs
Temperature
Figure 39. DESAT Detection Voltage vs
Temperature
0.26
0.28
0.24
0.2
0.24
0.22
0.2
0.18
0.16
0.14
0.16
0.12
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 40. DESAT Leading Edge
Blanking Time vs Temperature
Figure 41. DESAT Detection
Filter Time vs Temperature
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Typical Performance Curves – continued
0.5
0.44
0.38
0.32
0.26
0.2
0.15
0.1
0.05
0
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 42. DESAT Detection Delay Time
(PROOUT) vs Temperature
Figure 43. DESAT Pin Low Voltage vs
Temperature
1.82
1.77
1.72
1.67
1.62
0.7
0.5
0.3
0.1
-40
0
40
80
120
-40
0
40
80
120
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 44. Output Delay Difference
between PROOUT and FLT vs
Temperature
Figure 45. Thermal Detection Voltage vs
Temperature
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Selection of Components Externally Connected
Recommended
ROHM
MCR100JZH
LTR50UZP
Recommended
ROHM
Recommended
ROHM
MCR03EZP
MCR03EZP
Recommended
SUMIDA
CEER117
Recommended
ROHM
Recommended
ROHM
Recommended
ROHM
RB168MM150TF
LTR18EZP
RSR025N05FRA
Figure 46. Recommended External Parts
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I/O Equivalence Circuits
Pin Name
Pin No.
Input Output Equivalence Circuit Diagram
Pin Function
VCC2
PROOUT
2
PROOUT
Soft turn-off pin/Gate voltage input pin
VEE2
VCC2
VTSIN
3
VTSIN
GND2
Temperature sensor voltage input pin
VCC2
DESAT
DESAT detection pin
MODE
4
DESAT
GND2
VCC2
MODE
7
Mode selection pin of output-side UVLO
GND2
VEE2
VCC2
UVLOIN
UVLOIN
8
Output-side UVLO setting input pin
GND2
VEE2
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I/O Equivalence Circuits – continued
Pin Name
Pin No.
Input Output Equivalence Circuit Diagram
Pin Function
VCC2
OUT1H
11
Source side output pin
OUT1H
OUT1L
OUT1L
12
VEE2
VCC2
OUT2
Sink side output pin
OUT2
13
Output pin for Miller Clamp
VEE2
FLT
FLT
RDY
16
Fault output pin
RDY
20
GND1
Ready output pin
VREG
ENA
ENA
17
Input enabling signal input pin
GND1
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I/O Equivalence Circuits – continued
Name
Pin No.
Input Output Equivalence Circuit Diagram
Function
VREG
INA
INA
18
Control input pin A
GND1
VREG
INB
INB
19
Control input pin B
GND1
V_BATT
RT
21
RT
Switching frequency setting pin for
switching controller
GND1
Internal power
supply
V_BATT
FB
22
FB
Error amplifier inverting input pin for
switching controller
GND1
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I/O Equivalence Circuits – continued
Name
Pin No.
Input Output Equivalence Circuit Diagram
Function
Internal power
V_BATT
supply
COMP
COMP
GND1
23
Error amplifier output pin for switching
controller
VREG
V_BATT
Internal power
supply
25
26
Input-side internal power supply pin
FET_G
VREG
FET_G
MOS FET control pin for switching
controller
GND1
Internal power
supply
V_BATT
SENSE
27
SENSE
GND1
Current detection pin for switching
controller
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Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
6. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
7. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
8. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
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Operational Notes – continued
9. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
10. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
11. Regarding the Input Pin of the IC
This IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N
junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 47. Example of IC structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all
within the Area of Safe Operation (ASO).
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Ordering Information
A
F
V
B M 6 0 0 5 2
-
C E 2
Package
FV:
Rank
C:Automotive
Part Number
SSOP-B28W
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagram
SSOP-B28W (TOP VIEW)
Part Number Marking
LOT Number
B M6 0 0 5 2 A
PIN1 MARK
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Physical Dimension and Packing Information
Package Name
SSOP-B28W
(Max 9.55 (include.BURR))
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Revision History
Date
Revision
001
Changes
15.May.2018
New Release
P6 Miller Clamp Function add comment, Figure 4. change Timing chart
P14 I/O Condition Table change No.8
24.Sep.2019
002
P29 I/O Equivalence Circuits change PROOUT,VTSIN
P30 I/O Equivalence Circuits change OUT2,ENA
P31 I/O Equivalence Circuits change RT
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Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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