ES6U3T2R [ROHM]
Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN;型号: | ES6U3T2R |
厂家: | ROHM |
描述: | Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN 开关 光电二极管 晶体管 |
文件: | 总5页 (文件大小:199K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
4V Drive Nch+SBD MOSFET
ES6U3
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
WEMT6
(6) (5) (4)
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in WEMT6 package.
(1) (2) (3)
2) High-speed switching, Low On-resistance.
3) Built-in Low VF schottky barrier diode.
Abbriviated symbol : U03
zApplications
zInner circuit
Switching
(6)
(4)
(5)
zPackage specifications
∗2
Package
Taping
T2R
Type
Code
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
Basic ordering unit (pieces)
8000
∗1
ES6U3
(1)
(2)
(3)
∗1 ESD protection diode
∗2 Body diode
(6)Drain
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Symbol
Limits
30
Unit
V
VDSS
VGSS
ID
20
Gate-source voltage
V
Continuous
Pulsed
1.4
2.8
0.5
2.8
A
Drain current
∗1
∗1
IDP
A
Source current
(Body diode)
Continuous
Pulsed
IS
A
ISP
A
Channel temperature
Power dissipation
Tch
PD
150
0.7
°C
∗2
W / ELEMENT
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Symbol
VRM
VR
Limits
25
Unit
Repetitive peak reverse voltage
Reverse voltage
V
20
V
0.5
2.0
IF
Forward current
A
∗1
IFSM
Forward current surge peak
Junction temperature
Power dissipation
A
°C
Tj
PD
150
0.5
∗2
W / ELEMENT
∗1 60Hz 1cyc.
∗2 Mounted on a ceramic board
<MOSFET and Di>
Parameter
Symbol
Limits
0.8
Unit
W / TOTAL
°C
∗
Power dissipation
PD
Range of storage temperature
∗ Mounted on a ceramic board
Tstg
−55 to +150
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ES6U3
Data Sheet
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS= 20V, VDS=0V
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS 30
V
µA
V
ID= 1mA, VGS=0V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
1.0
−
−
−
−
−
1
VDS= 30V, VGS=0V
DS= 10V, ID= 1mA
VGS (th)
2.5
240
350
380
−
−
−
−
−
−
−
−
−
−
−
V
170
250
270
−
70
15
12
6
mΩ ID= 1.4A, VGS= 10V
mΩ ID= 1.4A, VGS= 4.5V
mΩ ID= 1.4A, VGS= 4V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
1
S
VDS= 10V, ID= 1.4A
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS= 10V
Coss
Crss
td (on)
VGS=0V
f=1MHz
∗
∗
∗
V
DD 15V
= 0.7A
I
D
t
r
6
V
R
R
GS= 10V
Turn-off delay time
Fall time
td (off)
13
8
L
21Ω
∗
∗
tf
G
= 10Ω
Total gate charge
Gate-source charge
Qg
1.4
0.6
0.3
VDD 15V, VGS= 5V
ID= 1.4A, RL 11Ω
RG= 10Ω
∗
∗
Qgs
Qgd
−
−
Gate-drain charge
∗Pulsed
<Body diode characteristics (Source-drain)>
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
V
∗
Forward voltage
V
SD
−
−
1.2
IS= 1.4A, VGS=0V
∗Pulsed
<Di>
Parameter
Symbol Min. Typ. Max.
Conditions
IF= 0.1A
Unit
V
−
−
−
−
−
−
0.36
0.52
100
Forward voltage
Reverse current
VF
V
IF= 0.5A
I
R
µA
V = 20V
R
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ES6U3
Data Sheet
zElectrical characteristics curves
< MOSFET >
1000
1000
100
10
10
9
Ta=25°C
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
Ta=25°C
VDD=15V
ID=1.4A
RG=10Ω
Pulsed
f=1MHz
VGS=0V
8
t
t
f
7
6
100
Ciss
d (off)
5
4
3
2
1
0
Coss
10
1
t
d (on)
Crss
t
r
1
0.01
0.1
1
10
100
0.01
0.1
1
10
0
1
2
3
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
1000
10
1
10
1
Ta=25°C
VGS=0V
Pulsed
VDS=10V
900
Pulsed
Pulsed
800
Ta=125°C
700
600
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=75°C
Ta=25°C
Ta= −25°C
ID=1.4A
0.1
500
400
300
ID=0.7A
0.1
0.01
200
100
0.01
0.0
0 0
2
4
6
8
10
0.5
1.0
1.5
0.001
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance
Fig.6 Source Current vs.
Source-Drain Voltage
Fig.4 Typical Transfer Characteristics
vs. Gate-Source Voltage
10000
10000
10000
VGS=10V
Pulsed
VGS=4.5V
Pulsed
VGS=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1000
100
1000
100
1000
100
10
10
10
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
Fig.8 Static Drain-Source
Fig.9 Static Drain-Source
On-State Resistance vs.
On-State Resistance vs.
On-State Resistance vs.
Drain Current ( Ι )
Drain Current ( ΙΙ )
Drain Current ( ΙΙΙ )
1000
Ta=25°C
Pulsed
V
V
GS=4V
GS=4.5V
GS=10V
V
100
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source
On-State Resistance vs.
Drain Current ( Ι
)
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ES6U3
Data Sheet
< Di >
100000
10000
1000
100
1
0.1
pulsed
pulsed
Ta = 75
℃
Ta = 25
℃
Ta = 75
℃
10
Ta = 25
℃
Ta= - 25
℃
Ta= - 25
℃
0.01
0.001
1
0.1
0.01
0
5
10
REVERSE VOLTAGE : VR[V]
Fig.1 Reverse Current vs. Reverse Voltage
15
20
25
0
0.1
FORWARD VOLTAGE : VF[V]
Fig.2 Forward Current vs. Forward Voltage
0.2
0.3
0.4
0.5
0.6
zMeasurement circuit
Pulse Width
90%
I
D
VDS
50%
10%
V
GS
50%
VGS
RL
VDS
D.U.T.
10%
90%
10%
VDD
RG
90%
tf
t
d(on)
td(off)
t
r
t
on
toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
I
D
VDS
Q
g
V
GS
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
RG
Charge
Fig.2-1 Gate Charge Measurement Circuit
FIg.2-2 Gate Charge Waveform
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and
increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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