SMG2317P [SECOS]
P-Channel Enhancement Mode MOSFET; P沟道增强型MOSFET
| 型号： | SMG2317P |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement Mode MOSFET |
| 文件： | 总5页 (文件大小：782K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2317P
-0.9 A, -30 V, RDS(ON) 300 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a High
Cell Density process. Low RDS(on) assures minimal power loss
and conserves energy, making this device ideal for use in power
management circuitry. Typical applications are lower voltage
application, power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
D
FEATURES
H
J
G
Low RDS(on) provides higher efficiency and extends
battery life.
Low Gate Charge
Fast switch.
Miniature SC-59 surface mount package saves
board space.
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
Min.
Max.
3.10
3.00
1.70
1.40
A
B
C
D
2.70
2.25
1.30
1.00
G
H
J
0.10
0.45
0.85
0.20
0.55
1.15
K
E
F
1.70
0.35
2.30
0.50
L
PACKAGE INFORMATION
Package
MPQ
3K
LeaderSize
1
2
SC-59
7’ inch
3
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±20
V
V
ID @ TA=25°C
ID @ TA=70°C
-0.9
-0.75
-10
0.4
0.5
A
Continuous Drain Current 1
ID
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
IDM
IS
A
A
PD @ TA=25°C
PD @ TA=70°C
W
W
°C
PD
0.42
-55 ~ 150
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Data
t ≦ 5 sec
250
285
Maximum Junction to Ambient 1
Notes:
RJA
°C / W
Steady State
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 1 of 5
SMG2317P
-0.9 A, -30 V, RDS(ON) 300 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Switch Off Characteristics
Drain-Source Breakdown Voltage
Gate-Body Leakage
V(BR)DSS
IGSS
-30
-
-
-
-
-
V
VDS= 0V, ID= -250uA
-
-
-
±100
-1
nA VDS= 0V, VGS= ±20V
VDS= -24V, VGS= 0V
μA
Zero Gate Voltage Drain Current
IDSS
-10
VDS= -24V, VGS= 0V, TJ= 55°C
Switch On Characteristics
Gate-Threshold Voltage
On-State Drain Current 1
VGS(th)
ID(on)
-0.8
-1.7
-
-2.6
-
V
A
VDS=VGS, ID= -250uA
VDS = -5V, VGS= -4.5V
VGS= -10V, ID= -1A
-2
-
250
530
450
2
300
660
500
-
Drain-Source On-Resistance 1
RDS(ON)
-
mΩ VGS= -4.5V, ID= -0.9A,TJ= 55°C
-
VGS= -4.5V, ID= -0.9A
Forward Transconductance 1
Diode Forward Voltage
gfs
-
S
V
VDS= -5V, ID= -1.1A
IS= -0.4A, VGS= 0V
VSD
-
-0.7
-1.2
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
-
-
-
2
3
-
VDS= -10V, VGS= -5V,
ID= -0.9A
0.5
1.1
nC
-
Switching
Turn-on Delay Time
Rise Time
Td(on)
Tr
Td(off)
Tf
-
-
-
-
8
16
32
93
94
16
36
33
VDS= -10V, VGEN= -10V,
RG= 50, ID= -0.9A
nS
Turn-off Delay Time
Fall Time
Notes:
1
2
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 2 of 5
SMG2317P
-0.9 A, -30 V, RDS(ON) 300 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 3 of 5
SMG2317P
-0.9 A, -30 V, RDS(ON) 300 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 4 of 5
SMG2317P
-0.9 A, -30 V, RDS(ON) 300 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
05-Jan-2011 Rev. A
Page 5 of 5
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