SSD25N10_15 [SECOS]
N-Ch Enhancement Elektronische Bauelemente Mode Power MOSFET;
| 型号： | SSD25N10_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Elektronische Bauelemente Mode Power MOSFET |
| 文件： | 总4页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSD25N10
25A , 100V , RDS(ON) 48m
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-252(D-Pack)
DESCRIPTION
The SSD25N10 is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
A
B
FEATURES
C
D
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
G E
Green Device Available
K
H F
N
O
P
2
Drain
M
J
MARKING
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
25N10
1
Gate
A
B
C
D
E
F
6.35
5.20
2.15
0.45
6.8
2.40
5.40
0.64
6.80
5.50
2.40
0.58
7.5
3.0
6.25
1.20
J
K
M
N
O
P
2.30 REF.
Date Code
ꢀꢀꢀꢀ
0.64
0.50
0.9
0.90
1.1
1.65
0.15
0.58
0
0.43
PACKAGE INFORMATION
G
H
3
Source
Package
MPQ
Leader Size
TO-252
2.5K
13 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
Unit
V
Drain-Source Voltage
Gate-Source Voltage
100
±20
25
VGS
V
A
TC=25°C
TC=70°C
Continuous Drain Current @VGS=10V 1
ID
16
A
Pulsed Drain Current 2
IDM
P D
45
A
Total Power Dissipation 4
TC=25°C
52
W
mJ
A
Single Pulse Avalanche Energy 3
EAS
26.6
20
Single Pulse Avalanche Current
IAS
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1
Maximum Thermal Resistance Junction-Case 1
RθJA
RθJC
110
2.4
°C / W
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Oct-2012 Rev. A
Page 1 of 4
SSD25N10
25A , 100V , RDS(ON) 48m
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Typ.
Max.
Unit
Teat Conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
IGSS
100
-
1.7
-
-
V
V
VGS=0, ID= 250µA
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
VDS=VGS, ID=250µA
VGS= ±20V
Gate-Source Leakage Current
±100
nA
TJ=25°C
TJ=55°C
-
1
VDS=80V, VGS=0
V DS=80V, VGS=0
VGS=10V, ID=25A
VGS=4.5V, ID=15A
Drain-Source Leakage Current
IDSS
µA
-
100
43
45
60
9.7
11.8
10.4
46
54
10
3848
137
82
1.6
48
50
-
Static Drain-Source On-Resistance 2
RDS(ON)
mΩ
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time 2
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
ID=20A
VDS=80V
VGS=10V
-
nC
nS
-
-
VDD=50V
ID=20A
VGS=10V
-
Turn-off Delay Time
Fall Time
Td(off)
Tf
-
RG=3.3 Ω
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
-
VGS =0
VDS=15V
f =1.0MHz
-
pF
Ω
-
-
f=1MHz
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
6
-
-
mJ
VDD=25V, L=0.1mH, IAS=10A
Source-Drain Diode
Diode Forward Voltage 2
Continuous Source Current 1,6
Pulsed Source Current 2,6
Reverse Recovery Time
VSD
IS
-
-
-
-
-
-
-
1.2
25
45
-
V
A
IS=1A, VGS=0, TJ=25°C
VD=VG=0, Force Current
ISM
Trr
-
A
30
37
nS
nC
IF=20A, dI/dt=100A/µs ,
TJ=25°C
Reverse Recovery Charge
Notes:
Qrr
-
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A
4. The power dissipation is limited by 150°C, junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Oct-2012 Rev. A
Page 2 of 4
SSD25N10
25A , 100V , RDS(ON) 48m
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Oct-2012 Rev. A
Page 3 of 4
SSD25N10
25A , 100V , RDS(ON) 48m
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Oct-2012 Rev. A
Page 4 of 4
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