SSD30N10-50D [SECOS]
N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | SSD30N10-50D |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总2页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSD30N10-50D
26A, 100V, RDS(ON) 50mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-252(D-Pack)
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life
A
B
C
D
Low thermal impedance copper leadframe TO-252
saves board space
Fast switching speed
High performance trench technology
G E
K
J
H F
APPLICATION
N
O
P
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
M
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
2.40
5.40
0.8
6.8
5.50
2.40
0.58
7.3
3.0
6.2
1.20
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
PACKAGE INFORMATION
0
0.43
0.15
0.58
Package
MPQ
LeaderSize
G
H
TO-252
2.5K
13’ inch
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
100
±20
20
Unit
V
V
Gate-Source Voltage
VGS
ID
Continuous Drain Current 1
Pulsed Drain Current 2
TC=25℃
A
IDM
36
A
Continuous Source Current (Diode Conduction) 1
IS
30
A
Power Dissipation 1
TC=25℃
PD
50
W
°C
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 175
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. A
Page 1 of 2
SSD30N10-50D
26A, 100V, RDS(ON) 50mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
1.0
Typ. Max. Unit
Test conditions
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
-
-
-
-
±100
1
V
VDS=VGS, ID=250μA
-
-
nA VDS=0, VGS=20V
VDS=80V, VGS=0
Zero Gate Voltage Drain Current
IDSS
μA
VDS=80V, VGS=0,
TJ=55°C
-
-
25
On-State Drain Current 1
ID(ON)
34
-
-
-
50
59
-
A
VDS=5V, VGS=10V
VGS=10V, ID=9.2A
VGS=4.5V, ID=6.1A
VDS=40V, ID=5.5A
IS=9A, VGS=0
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gfs
-
4.4
1.1
S
V
VSD
-
-
Dynamic 2
Total Gate Charge
Qg
-
25
-
ID= 9 A
nC VDS= 25 V
VGS= 10 V
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time
Rise Time
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
5
-
-
-
-
-
-
19
9
VDD=100V
15
45
39
ID= 9A
nS
RL= 25
Turn-off Delay Time
Td(off)
Tf
VGEN= 10V
Fall Time
Notes:
1. Pulse test： PW ≦ 300 us duty cycle ≦ 2％.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. A
Page 2 of 2
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