SSD30N03_15 [SECOS]
N-Ch Enhancement Mode Power MOSFET;
| 型号： | SSD30N03_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
34A, 30V, RDS(ON) 26mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide Low RDS(on) and to
ensure minimal power loss and heat dissipation.
TO-252(D-Pack)
FEATURES
ꢀ
ꢀ
ꢀ
ꢀ
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
A
B
C
D
High performance trench technology.
APPLICATION
G E
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
K
H F
N
O
P
2
Drain
M
J
PACKAGE INFORMATION
Millimeter
Millimeter
Package
MPQ
Leader Size
REF.
REF.
Min.
Max.
Min.
Max.
1
Gate
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
6.8
5.50
2.40
0.58
7.3
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
TO-252
2.5K
13 inch
0
0.43
0.15
0.58
2.40
5.40
0.8
3.0
6.2
1.20
3
Source
G
H
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
Unit
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
VGS
V
Continuous Drain Current 1
Pulsed Drain Current 2
TC=25°C
ID
34
A
IDM
72
A
Continuous Source Current (Diode Conduction) 1
IS
30
A
Total Power Dissipation 1
TC=25°C
PD
50
W
°C
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 175
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1
RθJA
RθJC
50
3
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
Notes：
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Sep-2012 Rev.A
Page 1 of 4
SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
34A, 30V, RDS(ON) 26mΩ
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Typ.
Max.
Unit
Teat Conditions
Gate-Threshold Voltage
VGS(th)
IGSS
1
-
-
-
±100
1
V
VDS=VGS, ID =250 µA
Gate-Body Leakage
-
-
nA
VDS =0, VGS=20V
VDS=24V, VGS=0
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
IDSS
ID(on)
µA
A
-
-
25
-
VDS=24V, VGS=0, TJ=55°C
VDS =5V, VGS=10V
VGS=10V, ID=17A
VGS=4.5V, ID=11A
VDS=15V, ID=17A
IS=34A, VGS=0
34
-
-
-
26
35
-
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gfs
-
22
S
V
VSD
-
1.1
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
Td(on)
Tr
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
VDS=15V
nC VGS=4.5V
ID=11A
1.1
1.4
720
165
60
16
5
VDS=15V
VGS=0
f=1MHz
pF
nS
VDD=25V
ID=34A
VGEN=10V
RL=25Ω
Turn-off Delay Time
Td(off)
Tf
23
3
Fall Time
Notes
1. Pulse test：Pulse width ≦ 300 µs, duty cycle ≦ 2％.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Sep-2012 Rev.A
Page 2 of 4
SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
34A, 30V, RDS(ON) 26mΩ
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Sep-2012 Rev.A
Page 3 of 4
SSD30N03-40D
N-Ch Enhancement Mode Power MOSFET
34A, 30V, RDS(ON) 26mΩ
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Sep-2012 Rev.A
Page 4 of 4
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