SSD30N06-39D [SECOS]
N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | SSD30N06-39D |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSD30N06-39D
N-Ch Enhancement Mode Power MOSFET
30A, 60V, RDS(ON) 38 mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-252(D-Pack)
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low RDS(on) and to ensure minimal power loss and
heat dissipation. Typical applications are DC-DC converters and power
management in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframce DPAK saves
board space
A
B
C
D
Fast switching speed
High performance trench technology
G E
PRODUCT SUMMARY
K
J
H F
N
O
P
PRODUCT SUMMARY
ID(A)
30
VDS(V)
60
RDS(on) m(
38 @VGS= 10V
50 @VGS= 4.5V
M
Drain
26
Gate
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
2.40
5.40
0.8
6.8
5.50
2.40
0.58
7.3
3.0
6.2
1.20
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
Source
0
0.43
0.15
0.58
G
H
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
Drain-Source Voltage
VDS
60
±20
Gate-Source Voltage
VGS
V
Continuous Drain Current a
Pulsed Drain Current b
ID @TC=25℃
IDM
19
A
40
A
Continuous Source Current (Diode Conduction) a
Power Dissipation a
IS
30
A
PD @TC=25℃
TJ, TSTG
50
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A
Page 1 of 4
SSD30N06-39D
N-Ch Enhancement Mode Power MOSFET
30A, 60V, RDS(ON) 38 mΩ
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1.0
-
-
-
-
V
VDS = VGS, ID = 250μA
-
-
±100 nA VDS= 0V, VGS= 20V
1
VDS= 48V, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
μA
VDS= 48V, VGS= 0V,
TJ= 55°C
-
-
25
On-State Drain Current a
ID(ON)
34
-
-
-
-
38
50
-
A
VDS= 5V, VGS= 10V
VGS= 10V, ID= 30A
VGS= 4.5V, ID= 26A
VDS= 15V, ID= 30A
IS= 24A, VGS = 0V
Drain-Source On-Resistance a
RDS(ON)
mΩ
-
-
Forward Transconductance a
Diode Forward Voltage
gfs
-
22
1.1
S
V
VSD
-
-
Dynamic b
Total Gate Charge
Qg
-
12.5
-
ID= 30 A
nC VDS= 15 V
VGS= 4.5 V
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time
Rise Time
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
2.4
2.6
11
8
-
-
-
-
-
-
VDD= 25 V
ID= 30 A
nS
RL= 25
Turn-off Delay Time
Fall Time
Td(off)
Tf
19
6
VGEN= 10 V
Notes
a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A
Page 2 of 4
SSD30N06-39D
N-Ch Enhancement Mode Power MOSFET
30A, 60V, RDS(ON) 38 mΩ
Elektronische Bauelemente
CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A
Page 3 of 4
SSD30N06-39D
N-Ch Enhancement Mode Power MOSFET
30A, 60V, RDS(ON) 38 mΩ
Elektronische Bauelemente
CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A
Page 4 of 4
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